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Articles 301 - 330 of 488
Full-Text Articles in Physics
High Mobility In N-Type Gan Substrates, A. Saxler, David C. Look, S. Elhamri, J. R. Sizelove, William C. Mitchel, C. M. Sung, S. S. Park, K. Y. Lee
High Mobility In N-Type Gan Substrates, A. Saxler, David C. Look, S. Elhamri, J. R. Sizelove, William C. Mitchel, C. M. Sung, S. S. Park, K. Y. Lee
Physics Faculty Publications
No abstract provided.
Evolution Of Deep Centers In Gan Grown By Hydride Vapor Phase Epitaxy, Z-Q. Fang, David C. Look, J. Jasinski, M. Benamara, Z. Liliental-Weber, Richard J. Molnar
Evolution Of Deep Centers In Gan Grown By Hydride Vapor Phase Epitaxy, Z-Q. Fang, David C. Look, J. Jasinski, M. Benamara, Z. Liliental-Weber, Richard J. Molnar
Physics Faculty Publications
Deep centers and dislocation densities in undoped n GaN, grown by hydride vapor phase epitaxy (HVPE), were characterized as a function of the layer thickness by deep level transient spectroscopy and transmission electron microscopy, respectively. As the layer thickness decreases, the variety and concentration of deep centers increase, in conjunction with the increase of dislocation density. Based on comparison with electron-irradiation induced centers, some dominant centers in HVPE GaN are identified as possible point defects.
Ga-Doped Zno Films Grown On Gan Templates By Plasma-Assisted Molecular-Beam Epitaxy, H. J. Ko, Yanfang Chen, S. K. Hong, H. Wenisch, T. Yao, David C. Look
Ga-Doped Zno Films Grown On Gan Templates By Plasma-Assisted Molecular-Beam Epitaxy, H. J. Ko, Yanfang Chen, S. K. Hong, H. Wenisch, T. Yao, David C. Look
Physics Faculty Publications
We have investigated the structural and optical properties of Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy. The carrier concentration in Ga-doped ZnO films can be controlled from 1.33×1018/cm3 to 1.13×1020/cm3. Despite high Ga incorporation, the linewidth of (0002) ω-rocking curves of Ga-doped ZnO films still lies in the range from 5 to 15 arc min. Photoluminescence (PL) spectra of Ga-doped ZnO films show dominant near-bandedge emission with negligibly weak deep-level emission, independent of carrier concentration. The PL spectrum exhibits a new emission line at 3.358 eV, which corresponds to …
Combined Effects Of Screening And Band Gap Renormalization On The Energy Of Optical Transitions In Zno And Gan, D. C. Reynolds, David C. Look, B. Jogai
Combined Effects Of Screening And Band Gap Renormalization On The Energy Of Optical Transitions In Zno And Gan, D. C. Reynolds, David C. Look, B. Jogai
Physics Faculty Publications
The energy positions of the optical transitions in both GaN and ZnO were investigated when the samples were excited simultaneously with a HeCd laser and an Ar+ ion laser. The increased number of free electrons excited by the Ar+ ion laser will effectively screen both the free exciton and bound exciton transitions, resulting in a blueshift. The increased number of free electrons also produces many-body effects, which lead to a reduction of the band gap energy and thus a redshift. The resultant of screening and renormalization results in a redshift of the optical transitions in ZnO but a …
Electron Beam And Optical Depth Profiling Of Quasibulk Gan, L. Chernyak, A. Osinsky, G. Nootz, A. Schulte, J. Jasinski, M. Benamara, Z. Liliental-Weber, David C. Look, Richard J. Molnar
Electron Beam And Optical Depth Profiling Of Quasibulk Gan, L. Chernyak, A. Osinsky, G. Nootz, A. Schulte, J. Jasinski, M. Benamara, Z. Liliental-Weber, David C. Look, Richard J. Molnar
Physics Faculty Publications
Electron beam and optical depth profiling of thick (5.5–64 μm) quasibulk n-type GaN samples, grown by hydride vapor-phase epitaxy, were carried out using electron beam induced current (EBIC), microphotoluminescence (PL), and transmission electron microscopy (TEM). The minority carrier diffusion length, L, was found to increase linearly from 0.25 μm, at a distance of about 5 μm from the GaN/sapphire interface, to 0.63 μm at the GaN surface, for a 36-μm-thick sample. The increase in L was accompanied by a corresponding increase in PL band-to-band radiative transition intensity as a function of distance from the GaN/sapphire interface. We attribute …
Identification Of The Gamma(5) And Gamma(6) Free Excitons In Gan, D. C. Reynolds, David C. Look, B. Jogai, A. W. Saxler, Seong-Ju S. Park, J. Y. Hahn
Identification Of The Gamma(5) And Gamma(6) Free Excitons In Gan, D. C. Reynolds, David C. Look, B. Jogai, A. W. Saxler, Seong-Ju S. Park, J. Y. Hahn
Physics Faculty Publications
The Γ5 and Γ6 free excitons have been identified in GaN from emission measurements. Another emission peak is also observed which we believe to be the longitudinal free exciton. These measurements along with electrical measurements, which show the sample to have very high peak mobility, attest to the high quality of the sample.
Photoluminescence Measurements From The Two Polar Faces Of Zno, R. E. Sherriff, D. C. Reynolds, David C. Look, B. Jogai, J. E. Hoelscher, T. C. Collins, G. Cantwell, W. C. Harsch
Photoluminescence Measurements From The Two Polar Faces Of Zno, R. E. Sherriff, D. C. Reynolds, David C. Look, B. Jogai, J. E. Hoelscher, T. C. Collins, G. Cantwell, W. C. Harsch
Physics Faculty Publications
The crystal structure of ZnO is wurtzite and the stacking sequence of atomic layers along the “c” axis is not symmetric. As a result, a ZnO crystal surface that is normal to the c axis exposes one of two distinct polar faces, with (0001̄) being considered the O face and (0001) the Zn face. Photoluminescence (PL) measurements on the two faces reveal a striking difference. Two transitions are observed in PL that are dominant from the O face and barely observed in PL from the Zn face. These lines are identified as phonon replicas of a particular D …
Electrical Properties Of Boron-Doped P-Sigec Grown On N(-)-Si Substrate, M. Ahoujja, Y. K. Yeo, R. L. Hengehold, G. S. Pomrenke, David C. Look, J. Huffman
Electrical Properties Of Boron-Doped P-Sigec Grown On N(-)-Si Substrate, M. Ahoujja, Y. K. Yeo, R. L. Hengehold, G. S. Pomrenke, David C. Look, J. Huffman
Physics Faculty Publications
Electrical properties of fully strained boron-doped Si0.90−yGe0.10Cy/n−–Si grown by low pressure chemical vapor deposition have been investigated as a function of carbon content (0.2%–1.5%), using the variable temperature (25–650 K) Hall-effect technique. The results of Hall-effect measurements show that the Si substrate and the SiGeC/Si interfacial layer affect significantly the electrical properties of the SiGeC epitaxial layer. Thus, a three-layer conducting model has been used to extract the carrier concentration and mobility of the SiGeC layer alone. At room temperature, the hole carrier concentration decreases from 6.8×1017 to 2.4×10 …
Time-Resolved Photoluminescence Lifetime Measurements Of The Gamma(5) And Gamma(6) Free Excitons In Zno, D. C. Reynolds, David C. Look, B. Jogai, J. E. Hoelscher, R. E. Sherriff, M. T. Harris, M. J. Callahan
Time-Resolved Photoluminescence Lifetime Measurements Of The Gamma(5) And Gamma(6) Free Excitons In Zno, D. C. Reynolds, David C. Look, B. Jogai, J. E. Hoelscher, R. E. Sherriff, M. T. Harris, M. J. Callahan
Physics Faculty Publications
Time-resolved photoluminescence spectroscopy at 2 K was used to measure the radiative recombination lifetime of the allowed (Γ5) and forbidden (Γ6) free excitons in ZnO. The measurements were made on a sample containing internal strain, which altered the sample symmetry, and resulted in relaxed selection rules, allowing the Γ6 exciton to be observed. A radiative recombination lifetime of 259 ps was measured for the Γ5 exciton and 245 ps for the Γ6 exciton. The decay of the free excitons was of single-exponential form, and the decay times were obtained using a least-squares fit …
Properties Of Semi‐Insulating Gaas:Fe Grown By Hydride Vapor Phase Epitaxy, E. Rodríguez Messmer, D. Söderström, P. Hult, S. Marcinkevicius, S. Lourdudoss, David C. Look
Properties Of Semi‐Insulating Gaas:Fe Grown By Hydride Vapor Phase Epitaxy, E. Rodríguez Messmer, D. Söderström, P. Hult, S. Marcinkevicius, S. Lourdudoss, David C. Look
Physics Faculty Publications
In this paper we analyze GaAs grown by hydride vapor phase epitaxy (HVPE) and doped with four different iron concentrations between and . From temperature dependent current‐voltage measurements we observed the highest resistivity in the lowest doped sample. We also quantified the activation energy. These results together with those of time resolved photoluminescence measurements indicate that in the sample with the lowest Fe concentration, EL2 may be dominant. From the analysis of the time resolved photoluminescence measurements, the intrinsic EL2 concentration and the electron and hole capture cross sections of Fe in GaAs were estimated. © 2000 The Electrochemical Society. …
Strain Variation With Sample Thickness In Gan Grown By Hydride Vapor Phase Epitaxy, D. C. Reynolds, David C. Look, B. Jogai, J. E. Hoelscher, R. E. Sherriff, Richard J. Molnar
Strain Variation With Sample Thickness In Gan Grown By Hydride Vapor Phase Epitaxy, D. C. Reynolds, David C. Look, B. Jogai, J. E. Hoelscher, R. E. Sherriff, Richard J. Molnar
Physics Faculty Publications
High quality GaN crystals can be grown on sapphire by hydride vapor phase epitaxy. The thermal expansion mismatch between sapphire and GaN produces strain in the GaN crystal as it is cooled from the growth temperature to room temperature. The strain is evidenced by shifts in the photoluminescence and reflectance line positions. By analyzing the surface strain as the crystal thickness is increased, the thickness required to obtain zero surface strain can be estimated. This structure might provide a lattice matched and thermally matched substrate for further epitaxial growth of GaN.
Dissociation Of Al2o3(0001) Substrates And The Roles Of Silicon And Oxygen In N-Type Gan Thin Solid Films Grown By Gas-Source Molecular Beam Epitaxy, J. E. Van Nostrand, J. Solomon, A. Saxler, Q. H. Xie, D. C. Reynolds, David C. Look
Dissociation Of Al2o3(0001) Substrates And The Roles Of Silicon And Oxygen In N-Type Gan Thin Solid Films Grown By Gas-Source Molecular Beam Epitaxy, J. E. Van Nostrand, J. Solomon, A. Saxler, Q. H. Xie, D. C. Reynolds, David C. Look
Physics Faculty Publications
Unintentionally doped and silicon doped GaN films prepared by molecular beam epitaxy using ammonia are investigated. Hall, secondary ion mass spectroscopy (SIMS), photoluminescence, and x-ray data are utilized for analysis of sources of autodoping of GaN epitaxial films in an effort to identify whether the n-type background electron concentration is of impurity origin or native defect origin. We identify and quantify an anomalous relationship between the Si doping concentration and free carrier concentration and mobility using temperature dependent Hall measurements on a series of 2.0-μm-thick GaN(0001) films grown on sapphire with various Si doping concentrations. SIMS is used to …
Zno Diode Fabricated By Excimer-Laser Doping, Toru Aoki, Yoshinori Hatanaka, David C. Look
Zno Diode Fabricated By Excimer-Laser Doping, Toru Aoki, Yoshinori Hatanaka, David C. Look
Physics Faculty Publications
A ZnO diode was fabricated by using a laser-doping technique to form a p-type ZnO layer on an n-type ZnO substrate. A zinc-phosphide compound, used as a phosphorous source, was deposited on the ZnO wafer and subjected to excimer-laser pulses. The current–voltage characteristics showed a diode characteristic between the phosphorous-doped p-layer and the n-type substrate. Moreover, light emission, with a band-edge component, was observed by forward current injection at 110 K.
On The Main Irradiation-Induced Defect In Gan, L. Polenta, Z-Q. Fang, David C. Look
On The Main Irradiation-Induced Defect In Gan, L. Polenta, Z-Q. Fang, David C. Look
Physics Faculty Publications
We show that the usual Arrhenius analysis of the main electron-irradiation-induced defect trap in n-type GaN, observed by deep-level transient spectroscopy (DLTS), is not sufficiently accurate. Instead, an exact fitting of the DLTS spectrum for this trap reveals two components, each of which has a thermal energy near 60 meV, not the apparent 140–200 meV, as given in other DLTS studies. This result resolves the discrepancy between Hall-effect and DLTS determinations of the thermal energy of this defect center.
Oxygen Pressure-Tuned Epitaxy And Optoelectronic Properties Of Laser-Deposited Zno Films On Sapphire, S. Choopun, R. D. Vispute, W. Noch, A. Balsamo, R. P. Sharma, T. Venkatesan, A. Iliadis, David C. Look
Oxygen Pressure-Tuned Epitaxy And Optoelectronic Properties Of Laser-Deposited Zno Films On Sapphire, S. Choopun, R. D. Vispute, W. Noch, A. Balsamo, R. P. Sharma, T. Venkatesan, A. Iliadis, David C. Look
Physics Faculty Publications
Influence of oxygen pressure on the epitaxy, surface morphology, and optoelectronic properties has been studied in the case of ZnO thin films grown on sapphire ~0001! by pulsed-laser deposition. Results of Rutherford backscattering and ion channeling in conjunction with atomic force microscopy clearly indicate that the growth mode, degree of epitaxy, and the defect density strongly depend on the oxygen background pressure during growth. It is also found that the growth mode and the defects strongly influence the electron mobility, free-electron concentration, and the luminescence properties of the ZnO films. By tuning the oxygen pressure during the initial and the …
Velocity Distributions Of C Atoms In Co+ Dissociative Recombination: Implications For Photochemical Escape Of C From Mars, Jane L. Fox, Aleksander Hać
Velocity Distributions Of C Atoms In Co+ Dissociative Recombination: Implications For Photochemical Escape Of C From Mars, Jane L. Fox, Aleksander Hać
Physics Faculty Publications
We have carried out Monte Carlo calculations to determine the velocity distributions of C atoms produced by dissociative recombination of CO+ using recent data for the branching ratios of various allowed channels and ion and electron temperatures appropriate to the Martian thermosphere. We find that the fractions of 12C atoms with velocities greater than the escape velocity are ∼ 0.66 and ∼ 0.62, and those for 13C are ∼ 0.47 and ∼ 0.48 at the plasma temperatures characteristic of the exobases at low and high solar activities, respectively. The ratio of the escape fractions of 13C …
Strain Splitting Of The Gamma(5) And Gamma(6) Free Excitons In Zno, D. C. Reynolds, David C. Look, B. Jogai, C. W. Litton, T. C. Collins, M T. Harris, M. J. Callahan, J. S. Bailey
Strain Splitting Of The Gamma(5) And Gamma(6) Free Excitons In Zno, D. C. Reynolds, David C. Look, B. Jogai, C. W. Litton, T. C. Collins, M T. Harris, M. J. Callahan, J. S. Bailey
Physics Faculty Publications
High-quality ZnO crystals have been grown by vapor-phase techniques and by the hydrothermal method. Depending on the surface preparation technique, some hydrothermally grown crystals contain strain. These strains result in energy shifts of the free excitons as well as relaxation of the selection rules. The Γ6 unallowed exciton is observed in these samples without the application of a magnetic field. The Γ6 exciton is also observed to split in a strain field, consistent with the Γ9 symmetry for the top valence band in ZnO. The Γ5 and Γ6 excitons have been observed to split in …
Low-Frequency Noise In N-Gan With High Electron Mobility, M. E. Levinshtein, S. L. Rumyantsev, David C. Look, Richard J. Molnar, M. A. Khan, G. Simin, V. Adivarahan, M. S. Shur
Low-Frequency Noise In N-Gan With High Electron Mobility, M. E. Levinshtein, S. L. Rumyantsev, David C. Look, Richard J. Molnar, M. A. Khan, G. Simin, V. Adivarahan, M. S. Shur
Physics Faculty Publications
We report on the results of measurements of low frequency noise in n-type gallium nitride (GaN) grown on sapphire with 300 K electron mobility of 790 cm2/V s. The noise spectra have the form of 1/f noise with a Hooge parameter α of approximately 5×10−2. This value of α is two orders of magnitude smaller than that observed before in n-GaN. The obtained results show that the level of flicker noise in GaN, just like that in GaAs and Si, strongly depends on the structural perfection of the material (the amplitude of the …
Production And Annealing Of Electron Irradiation Damage In Zno, David C. Look, D. C. Reynolds, Joseph W. Hemsky, R. L. Jones, J. R. Sizelove
Production And Annealing Of Electron Irradiation Damage In Zno, David C. Look, D. C. Reynolds, Joseph W. Hemsky, R. L. Jones, J. R. Sizelove
Physics Faculty Publications
High-energy (>1.6 MeV) electrons create acceptors and donors in single-crystal ZnO. Greater damage is observed for irradiation in the [0001] direction (Zn face) than in the [000] direction (O face). The major annealing stage occurs at about 300–325 °C, and is much sharper for defects produced by Zn-face irradiation, than for those resulting from O-face irradiation. The defects appear to have a chain character, rather than being simple, near-neighbor vacancy/interstitial Frenkel pairs. These experiments suggest that ZnO is significantly more “radiation hard” than Si, GaAs, or GaN, and should be useful for applications in high-irradiation environments, such as electronics …
Valence-Band Ordering In Zno, D. C. Reynolds, David C. Look, B. Jogai, C. W. Litton, G. Cantwell, W. C. Harsch
Valence-Band Ordering In Zno, D. C. Reynolds, David C. Look, B. Jogai, C. W. Litton, G. Cantwell, W. C. Harsch
Physics Faculty Publications
The emission and reflection spectra of ZnO have been investigated in the intrinsic region and the data have been interpreted in terms of the wurtzite crystal band structure. Free-exciton emission is observed for the first time. Both the Γ5 and Γ6 state excitons associated with top valence band have been identified. This identification has established the valence-band symmetry ordering in ZnO.
Residual Native Shallow Donor In Zno, David C. Look, Joseph W. Hemsky, J. R. Sizelove
Residual Native Shallow Donor In Zno, David C. Look, Joseph W. Hemsky, J. R. Sizelove
Physics Faculty Publications
High-energy electron irradiation in ZnO produces shallow donors at about EC-30meV. Because the production rate is much higher for Zn-face (0001) than O-face (0001̅ ) irradiation, the donor is identified as a Zn-sublattice defect, most likely the interstitial ZnI or a ZnI-related complex. The donor energy is quite close to that of the unirradiated sample, and of other samples discussed in the literature, strongly suggesting that ZnI (and not VO) is the dominant native shallow donor in ZnO. An exceptionally high displacement threshold energy (∼1.6MeV) is quantitatively explained in terms of a …
Dislocation Scattering In Gan, David C. Look, J. R. Sizelove
Dislocation Scattering In Gan, David C. Look, J. R. Sizelove
Physics Faculty Publications
A theory of charged-dislocation-line scattering is developed within the framework of the Boltzmann transport equation. A fit of the theory to temperature-dependent Hall-effect data in GaN gives dislocation densities which are in excellent agreement with those measured by transmission electron microscopy. This work shows that threading edge dislocations in GaN indeed are electrically active, in agreement with recent theoretical predictions.
Effect Of Ammonia Flow Rate On Impurity Incorporation And Material Properties Of Si-Doped Gan Epitaxial Films Grown By Reactive Molecular Beam Epitaxy, Wook Kim, A. E. Botchkarev, H. Morkoç, Z-Q. Fang, David C. Look, David J. Smith
Effect Of Ammonia Flow Rate On Impurity Incorporation And Material Properties Of Si-Doped Gan Epitaxial Films Grown By Reactive Molecular Beam Epitaxy, Wook Kim, A. E. Botchkarev, H. Morkoç, Z-Q. Fang, David C. Look, David J. Smith
Physics Faculty Publications
Effect of ammonia flow rate on the impurity incorporation and material properties of Si-doped GaN films grown by reactive molecular beam epitaxy (RMBE) process is discussed. It appears that the ammonia flow rate has a marginal effect on the incorporation of impurities into the Si-doped GaN films except there was a little decrease in O and Si with increasing ammonia flow rate when the Si concentration in the film is higher than 1018 cm−3. Electron Hall mobility of Si-doped GaN films grown by RMBE varies with ammonia flow rate used during film growth. From deep level transient …
Deep Centers In N-Gan Grown By Reactive Molecular Beam Epitaxy, Z-Q. Fang, David C. Look, W. Kim, Z. Fan, A. Botchkarev, H. Morkoç
Deep Centers In N-Gan Grown By Reactive Molecular Beam Epitaxy, Z-Q. Fang, David C. Look, W. Kim, Z. Fan, A. Botchkarev, H. Morkoç
Physics Faculty Publications
Deep centers in Si-doped n-GaN layers grown by reactive molecular beam epitaxy have been studied by deep-level transient spectroscopy as a function of growth conditions. Si-doped GaN samples grown on a Si-doped n+-GaN contact layer at 800 °C show a dominant trap C1 with activation energy ET = 0.44 eV and capture cross-section σT = 1.3×10−15 cm−2, while samples grown at 750 °C on an undoped semi-insulating GaN buffer show prominent traps D1 and E1, with ET = 0.20 eV and σT = 8.4×10−17 cm …
Neutral-Donor-Bound-Exciton Complexes In Zno Crystals, D. C. Reynolds, David C. Look, B. Jogai, C. W. Litton, T. C. Collins, W. C. Harsch, G. Cantwell
Neutral-Donor-Bound-Exciton Complexes In Zno Crystals, D. C. Reynolds, David C. Look, B. Jogai, C. W. Litton, T. C. Collins, W. C. Harsch, G. Cantwell
Physics Faculty Publications
Neutral-donor–bound-exciton transitions have been observed in ZnO. The isolated neutral donors are made up of defect pair complexes. The neutral-donor nature of these pair complexes was determined from magneticfield measurements and from two-electron transitions. Excited states of the neutral-donor bound excitons were observed in the form of rotator states analogous to rotational states of the H2 molecule.
High Mobility Algan/Gan Heterostructures Grown By Gas-Source Molecular Beam Epitaxy, L. K. Li, J. Alperin, W. I. Wang, David C. Look, Donald C. Reynolds
High Mobility Algan/Gan Heterostructures Grown By Gas-Source Molecular Beam Epitaxy, L. K. Li, J. Alperin, W. I. Wang, David C. Look, Donald C. Reynolds
Physics Faculty Publications
We report on the growth of high electron mobility AlGaN/GaN heterostructures on sapphire substrates by gas-source molecular beam epitaxy (GSMBE) using ammonia as the nitrogen source. Improvements in structural, electrical, and optical properties of GaN and AlGaN layers have been made to achieve this goal. For the growth of AlGaN layers, the reflection high-energy electron diffraction revealed a twofold surface reconstruction, indicative of atomic smoothness of the film surface. High mobility two-dimensional electron gas has been achieved in both unintentionally doped (by piezoelectric effect induced by lattice mismatch strain) and modulation doped AlGaN/GaN heterostructures. The modulation-doped n+-Al0.2Ga …
Electron-Irradiation-Induced Deep Level In N-Type Gan, Z-Q. Fang, Joseph W. Hemsky, David C. Look, M. P. Mack
Electron-Irradiation-Induced Deep Level In N-Type Gan, Z-Q. Fang, Joseph W. Hemsky, David C. Look, M. P. Mack
Physics Faculty Publications
Deep-level transient spectroscopy measurements of n-type GaN epitaxial layers irradiated with 1-MeV electrons reveal an irradiation-induced electron trap at EC−0.18 eV. The production rate is approximately 0.2 cm−1, lower than the rate of 1 cm−1 found for the N vacancy by Hall-effect studies. The defect trap cannot be firmly identified at this time. ©1998 American Institute of Physics.
Effect Of High-Temperature Annealing On Electrical And Optical Properties Of Undoped Semi-Insulating Gaas, Z-Q. Fang, D. C. Reynolds, David C. Look, N. G. Paraskevopoulos, T. E. Anderson, R. L. Jones
Effect Of High-Temperature Annealing On Electrical And Optical Properties Of Undoped Semi-Insulating Gaas, Z-Q. Fang, D. C. Reynolds, David C. Look, N. G. Paraskevopoulos, T. E. Anderson, R. L. Jones
Physics Faculty Publications
A comprehensive characterization, including room temperature Hall effect, near infrared absorption, temperature dependent dark current and photocurrent (using 1.13 eV light), normalized thermally stimulated current (NTSC), photoluminescence at 4.2 K in both near band edge and deep level regions, and selective pair photoluminescence (SPL) at 2 K, has been carried out on undoped semi-insulating GaAs samples, cut from four wafers which were grown by the low pressure liquid encapsulated Czochralski technique and annealed by three different schedules: a 1100 °C anneal with either fast or slow cooling, or a 1000 °C standard anneal. The 1100 °C anneal clearly introduces higher …
Solar Cycle Variability Of Hot Oxygen Atoms At Mars, Jhoon Kim, Andrew F. Nagy, Jane L. Fox, Thomas E. Cravens
Solar Cycle Variability Of Hot Oxygen Atoms At Mars, Jhoon Kim, Andrew F. Nagy, Jane L. Fox, Thomas E. Cravens
Physics Faculty Publications
The population of hot oxygen atoms in the Martian exosphere is reexamined using newly calculated hot O production rates for both low and high solar cycle conditions. The hot oxygen production rates are assumed to result from the dissociative recombination of O2+ ions. These calculations take into account the calculated vibrational distribution of O2+ and the new measured branching ratios. Furthermore, these calculations also consider the variation of the dissociative recombination cross section with the relative speed of the participating ions and electrons, the rotational energy of the O2+ ions, and the spread of …
Spin Splitting Of Donor-Bound Excitons In Zno Due To Combined Stress And Spin Exchange, D. C. Reynolds, David C. Look, B. Jogai, T. C. Collins
Spin Splitting Of Donor-Bound Excitons In Zno Due To Combined Stress And Spin Exchange, D. C. Reynolds, David C. Look, B. Jogai, T. C. Collins
Physics Faculty Publications
No abstract provided.