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Articles 241 - 270 of 488

Full-Text Articles in Physics

Electronic Properties Of Silicon-Based Nanostructures, Gian Giacomo Guzman-Verri Jan 2006

Electronic Properties Of Silicon-Based Nanostructures, Gian Giacomo Guzman-Verri

Browse all Theses and Dissertations

We have developed a new unifying tight-binding theory that can account for the electronic properties of recently proposed Si-based nanostructures, namely, Si graphene-like sheets and Si nanotubes. We considered the sp2s* and sp3 models up to first- and second-nearest neighbors, respectively. Our results show that the corresponding Si nanotubes follow the so-called Hamada's rule. Comparison to a recent ab initio calculation is made.

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Models Of Disordered Media And Predictions Of Associated Hydraulic Conductivity, L. Aaron Blank Jr. Jan 2006

Models Of Disordered Media And Predictions Of Associated Hydraulic Conductivity, L. Aaron Blank Jr.

Browse all Theses and Dissertations

In the late 20th century there was a spill of Technetium in eastern Washington State at the US Department of Energy Hanford site. Resulting contamination of water supplies would raise serious health issues for local residents. Therefore, the ability to predict how these contaminants move through the soil is of great interest. The main contribution to contaminant transport arises from being carried along by flowing water. An important control on the movement of the water through the medium is the hydraulic conductivity, K, which defines the ease of water flow for a given pressure difference (analogous to the electrical conductivity). …

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Evidence For Native-Defect Donors In N-Type Zno, David C. Look, Gary C. Farlow, Pakpoom Reunchan, Sukit Limpijumnong, S. B. Zhang, K. Nordlund Nov 2005

Evidence For Native-Defect Donors In N-Type Zno, David C. Look, Gary C. Farlow, Pakpoom Reunchan, Sukit Limpijumnong, S. B. Zhang, K. Nordlund

Physics Faculty Publications

Recent theory has found that native defects such as the O vacancy VO and Zn interstitial ZnI have high formation energies in n-type ZnO and, thus, are not important donors, especially in comparison to impurities such as H. In contrast, we use both theory and experiment to show that, under N ambient, the complex ZnI-NO is a stronger candidate than H or any other known impurity for a 30 meV donor commonly found in bulk ZnO grown from the vapor phase. Since the Zn vacancy is also the dominant acceptor in such material, we must …

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Functional Characterization Of Core Promoter Elements: The Downstream Core Element Is Recognized By Taf1, Dong-Hoon Lee, Naum I. Gershenzon, Malavika Gupta, Ilya P. Ioshikhes, Danny Reinberg, Brian A. Lewis Nov 2005

Functional Characterization Of Core Promoter Elements: The Downstream Core Element Is Recognized By Taf1, Dong-Hoon Lee, Naum I. Gershenzon, Malavika Gupta, Ilya P. Ioshikhes, Danny Reinberg, Brian A. Lewis

Physics Faculty Publications

Downstream elements are a newly appreciated class of core promoter elements of RNA polymerase II-transcribed genes. The downstream core element (DCE) was discovered in the human β-globin promoter, and its sequence composition is distinct from that of the downstream promoter element (DPE). We show here that the DCE is a bona fide core promoter element present in a large number of promoters and with high incidence in promoters containing a TATA motif. Database analysis indicates that the DCE is found in diverse promoters, supporting its functional relevance in a variety of promoter contexts. The DCE consists of …

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Traps In Algan/Gan/Sic Heterostructures Studied By Deep Level Transient Spectroscopy, Z-Q. Fang, David C. Look, D. H. Kim, I. Adesida Oct 2005

Traps In Algan/Gan/Sic Heterostructures Studied By Deep Level Transient Spectroscopy, Z-Q. Fang, David C. Look, D. H. Kim, I. Adesida

Physics Faculty Publications

AlGaN/GaN/SiC Schottky barrier diodes (SBDs), with and without Si3N4 passivation, have been characterized by temperature-dependent current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy (DLTS). A dominant trap A1, with activation energy of 1.0 eV and apparent capture cross section of 2×10−12 cm2, has been observed in both unpassivated and passivated SBDs. Based on the well-known logarithmic dependence of DLTS peak height with filling pulse width for a line-defect related trap, A1, which is commonly observed in thin GaN layers grown by various techniques, is believed to be associated with …

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Introduction And Recovery Of Point Defects In Electron-Irradiated Zno, F. Tuomisto, K. Saarinen, David C. Look, Gary C. Farlow Aug 2005

Introduction And Recovery Of Point Defects In Electron-Irradiated Zno, F. Tuomisto, K. Saarinen, David C. Look, Gary C. Farlow

Physics Faculty Publications

We have used positron annihilation spectroscopy to study the introduction and recovery of point defects in electron-irradiated n -type ZnO. The irradiation ( Eel=2MeV , fluence 6×1017cm-2 ) was performed at room temperature, and isochronal annealings were performed from 300 to 600 K. In addition, monochromatic illumination of the samples during low-temperature positron measurements was used in identification of the defects. We distinguish two kinds of vacancy defects: the Zn and O vacancies, which are either isolated or belong to defect complexes. In addition, we observe negative-ion-type defects, which are attributed to O interstitials or …

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Role Of Near-Surface States In Ohmic-Schottky Conversion Of Au Contacts To Zno, H. L. Mosbacker, Y. M. Strzhemechny, B. D. White, P. E. Smith, David C. Look, D. C. Reynolds, C. W. Litton, L. J. Brillson Jun 2005

Role Of Near-Surface States In Ohmic-Schottky Conversion Of Au Contacts To Zno, H. L. Mosbacker, Y. M. Strzhemechny, B. D. White, P. E. Smith, David C. Look, D. C. Reynolds, C. W. Litton, L. J. Brillson

Physics Faculty Publications

A conversion from ohmic to rectifying behavior is observed for Au contacts on atomically ordered polar ZnO surfaces following remote, room-temperature oxygen plasma treatment. This transition is accompanied by reduction of the “green” deep level cathodoluminescence emission, suppression of the hydrogen donor-bound exciton photoluminescence and a ∼ 0.75 eV increase in n-type band bending observed via x-ray photoemission. These results demonstrate that the contact type conversion involves more than one mechanism, specifically, removal of the adsorbate-induced accumulation layer plus lowered tunneling due to reduction of near-surface donor density and defect-assisted hopping transport.

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Study Of The Photoluminescence Of Phosphorus-Doped P-Type Zno Thin Films Grown By Radio-Frequency Magnetron Sputtering, Dae-Kue Hwang, Hyun-Sik Kim, Jae-Hong Lim, Jin-Yong Y. Oh, Jin-Ho Yang, Seong-Ju Park, Kyong-Kook Kim, David C. Look, Y. S. Park Apr 2005

Study Of The Photoluminescence Of Phosphorus-Doped P-Type Zno Thin Films Grown By Radio-Frequency Magnetron Sputtering, Dae-Kue Hwang, Hyun-Sik Kim, Jae-Hong Lim, Jin-Yong Y. Oh, Jin-Ho Yang, Seong-Ju Park, Kyong-Kook Kim, David C. Look, Y. S. Park

Physics Faculty Publications

Phosphorus-doped p-type ZnO thin films were grown on sapphire by radio-frequency magnetron sputtering. The photoluminescence (PL) spectra revealed an acceptor bound exciton peak at 3.355 eV and a conduction band to the acceptor transition caused by a phosphorus related level at 3.310 eV. A study of the dependence of the excitation laser power density and temperature on the characteristics of the PL spectra suggests that the emission lines at 3.310 and 3.241 eV can be attributed to a conduction band to the phosphorus-related acceptor transition and a donor to the acceptor pair transition, respectively. The acceptor energy level of the …

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C And C+ In The Venusian Thermosphere/Ionosphere, Jane L. Fox, L. J. Paxton Jan 2005

C And C+ In The Venusian Thermosphere/Ionosphere, Jane L. Fox, L. J. Paxton

Physics Faculty Publications

We have constructed standard low and high solar activity models of the Venus thermosphere, which take into account revised rate coefficients for production and loss processes for C and C+, high-resolution cross sections for photodissociation of CO, and recent solar fluxes from the Solar 2000 v1.24 and v2.22 models of Tobiska [2004]. Among the most important changes is the inclusion of the branching ratio for the channel of dissociative recombination of CO2+ that produces C + O2, which has been measured recently by Seiersen et al. [2003]. We find that unlike Mars, where the …

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Thermospheric Distribution Of Fast O(D-1) Atoms, V. Kharchenko, A. Dalgarno, Jane L. Fox Jan 2005

Thermospheric Distribution Of Fast O(D-1) Atoms, V. Kharchenko, A. Dalgarno, Jane L. Fox

Physics Faculty Publications

Detailed calculations are carried out of the sources of energetic metastable O(1D) atoms in the atmosphere at altitudes between 80 km and 200 km, and the corresponding energy distribution functions are derived, taking account of energy transfer and quenching in collisions of the metastable atoms with the ambient atmospheric gas constituents. The energy relaxation of metastable oxygen atoms produced by O2 and O3 photolysis and O2 + dissociative recombination is determined by solving the time-dependent Boltzmann equation. The O(1D) thermalization and quenching times are obtained as functions of the altitude. The steady state …

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Effects Of Dissociative Recombination On The Composition Of Planetary Atmospheres, Jane L. Fox Jan 2005

Effects Of Dissociative Recombination On The Composition Of Planetary Atmospheres, Jane L. Fox

Physics Faculty Publications

Because dissociative recombination (DR) reactions of molecular ions are often highly exothermic, in the thermospheres of the Earth and planets DR may be a source of translationally and internally excited fragments. DR is important, therefore, for thermospheric neutral heating; if the excited fragments radiate to space, however, DR may be also a source of thermospheric cooling. DR may produce metastable fragments, which may live long enough to participate in reactions that are not available to ground state species. It is rare, however, for DR to be a significant source of minor species in their ground states. An exception appears to …

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Frequency Scanned Interferometer Demonstration System, Jason A. Deibel, Sven Nyberg, Keith Riles, Haijun Yang Jan 2005

Frequency Scanned Interferometer Demonstration System, Jason A. Deibel, Sven Nyberg, Keith Riles, Haijun Yang

Physics Faculty Publications

No abstract provided.

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Ion Cyclotron Waves In The Saturnian Magnetosphere Associated With Cassini's Engine Exhaust, C. T. Russell, J. S. Leisner, K. K. Khurana, M. K. Dougherty, X. Blanco-Cano, Jane L. Fox Jan 2005

Ion Cyclotron Waves In The Saturnian Magnetosphere Associated With Cassini's Engine Exhaust, C. T. Russell, J. S. Leisner, K. K. Khurana, M. K. Dougherty, X. Blanco-Cano, Jane L. Fox

Physics Faculty Publications

Five hours after the orbit insertion maneuver that placed Cassini into orbit about Saturn, a long (90 minute) burst of ion cyclotron waves were seen, very different than any waves on the inbound leg of the orbit or on succeeding orbits. The ion cyclotron waves were left-hand elliptically polarized and propagating at a moderately large angle to the local magnetic field. The waves had a noticeable compressional component consistent with their off angle propagation. The frequency band of the signals was moderately broad and consistent with the singly ionized components of the engine exhaust gases: CO2, N2 …

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Computational Technique For Improvement Of The Position-Weight Matrices For The Dna/Protein Binding Sites, Naum I. Gershenzon, Gary D. Stormo, Ilya P. Ioshikhes Jan 2005

Computational Technique For Improvement Of The Position-Weight Matrices For The Dna/Protein Binding Sites, Naum I. Gershenzon, Gary D. Stormo, Ilya P. Ioshikhes

Physics Faculty Publications

Position-weight matrices (PWMs) are broadly used to locate transcription factor binding sites in DNA sequences. The majority of existing PWMs provide a low level of both sensitivity and specificity. We present a new computational algorithm, a modification of the Staden–Bucher approach, that improves the PWM. We applied the proposed technique on the PWM of the GC-box, binding site for Sp1. The comparison of old and new PWMs shows that the latter increase both sensitivity and specificity. The statistical parameters of GC-box distribution in promoter regions and in the human genome, as well as in each chromosome, are presented. The majority …

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Micro-Auger Electron Spectroscopy Studies Of Chemical And Electronic Effects At Gan-Sapphire Interfaces, X. L. Sun, S. T. Bradley, G. H. Jessen, David C. Look, Richard J. Molnar, L. J. Brillson Nov 2004

Micro-Auger Electron Spectroscopy Studies Of Chemical And Electronic Effects At Gan-Sapphire Interfaces, X. L. Sun, S. T. Bradley, G. H. Jessen, David C. Look, Richard J. Molnar, L. J. Brillson

Physics Faculty Publications

We have used cross-sectional micro-Auger electron spectroscopy (AES), coupled with micro-cathodoluminescence (CLS) spectroscopy, in a UHV scanning electron microscope to probe the chemical and related electronic features of hydride vapor phase epitaxy GaN/sapphire interfaces on a nanometer scale. AES images reveal dramatic evidence for micron-scale diffusion of O from Al2O3 into GaN. Conversely, plateau concentrations of N can extend microns into the sapphire, corresponding spatially to a 3.8 eV defect emission and Auger chemical shifts attributed to Al-N-O complexes. Interface Al Auger signals extending into GaN indicates AlGaN alloy formation, consistent with a blue-shifted CLS local interface …

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As-Doped P-Type Zno Produced By An Evaporation/Sputtering Process, David C. Look, G. M. Renlund, R. H. Burgener, J. R. Sizelove Nov 2004

As-Doped P-Type Zno Produced By An Evaporation/Sputtering Process, David C. Look, G. M. Renlund, R. H. Burgener, J. R. Sizelove

Physics Faculty Publications

Strongly p-type ZnO is produced by the following sequence of steps: (1) evaporation of Zn3As2 on a fused-quartz substrate at 350 °C; and (2) sputtering of ZnO with substrate held at 450 °C. The electrical characteristics include: resistivity of 0.4 Ω cm, a mobility of 4 cm2∕V s, and a hole concentration of about 4×1018 cm−3. This resistivity is among the best (lowest) ever reported for p-type ZnO. Secondary-ion mass spectroscopic analysis gives an average As concentration about 5×1019 cm−3, and a simple one-band fit of the …

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Response Of The Martian Thermosphere/Ionosphere To Enhanced Fluxes Of Solar Soft X Rays, Jane L. Fox Oct 2004

Response Of The Martian Thermosphere/Ionosphere To Enhanced Fluxes Of Solar Soft X Rays, Jane L. Fox

Physics Faculty Publications

We have investigated the response of the thermosphere and ionosphere of Mars to enhanced fluxes of solar soft X rays, such as those that have been detected by the SNOE satellite (e.g., Bailey et al., 2000 ). We have constructed standard models by adopting the SC#21REFW and F79050N solar fluxes from H. E. Hinteregger (private communication) (see also Torr et al., 1979 ) for the low and high solar activity models, respectively. We then constructed enhanced soft X-ray models by multiplying the solar photon fluxes for wavelengths below 200 Å by a factor of 3 at low solar …

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Below Band Gap Photoreflectance Transitions In Epitaxial Gan, Phil W. Yu, Jerry D. Clark, David C. Look, C. Q. Chen, Jinwei Yang, Edmundas Koutstis, M. Asif Khan, Denis V. Tsvertkov, Vladimir A. Dmitriev Sep 2004

Below Band Gap Photoreflectance Transitions In Epitaxial Gan, Phil W. Yu, Jerry D. Clark, David C. Look, C. Q. Chen, Jinwei Yang, Edmundas Koutstis, M. Asif Khan, Denis V. Tsvertkov, Vladimir A. Dmitriev

Physics Faculty Publications

A photoreflectance (PR) and photoluminescence (PL) study has been performed on a Si-doped epitaxial GaN layer that contains impurity or defect related below band gap features in its PR spectrum. In the 300 K PR spectrum, these features appear at energies of 3.26 and 3.33 eV, respectively, but below 180 K they can no longer be seen. The 3.26 eV line evidently corresponds to a donor acceptor pair transition, also seen in PL. The origin of the 3.33 eV line is uncertain, but may correspond to a transition involving the nitrogen vacancy.

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Co2+ Dissociative Recombination: A Source Of Thermal And Nonthermal C On Mars, Jane L. Fox Aug 2004

Co2+ Dissociative Recombination: A Source Of Thermal And Nonthermal C On Mars, Jane L. Fox

Physics Faculty Publications

CO2 + dissociative recombination has been assumed in the past to proceed overwhelmingly by the channel that produces CO + O. Although the channel that leads to the products C + O2 is energetically possible, the significant rearrangement of bonds that is required has led to the belief that this channel contributes minimally. Seiersen et al. [2003] have recently measured the branching ratio for the latter channel, and they have reported a value of ∼9% of the total. We have constructed both low and high solar activity models of the Martian thermosphere, and we have tested the effect …

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Hot Carbon Densities In The Exosphere Of Venus, Michael W. Liemohn, Jane L. Fox, Andrew F. Nagy, Xiaohua Fang Aug 2004

Hot Carbon Densities In The Exosphere Of Venus, Michael W. Liemohn, Jane L. Fox, Andrew F. Nagy, Xiaohua Fang

Physics Faculty Publications

The results of calculations of hot carbon densities in the exosphere of Venus are presented. The calculation is a two-step process. First a two-stream transport code is used to solve for the distribution function at the exobase, and then these results are used in a Liouville equation solution above the exobase. It is found that generally, photodissociation of carbon monoxide is the largest source of hot carbon atoms in the upper atmosphere of Venus, larger than dissociative recombination of CO+ and significantly larger than the creation of hot carbon through collisions with hot oxygen atoms. It is also found …

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Anomalous Capture And Emission From Internal Surfaces Of Semiconductor Voids: Nanopores In Sic, David C. Look, Z-Q. Fang, S. Soloviev, T. S. Sudarshan, J. J. Boeckl May 2004

Anomalous Capture And Emission From Internal Surfaces Of Semiconductor Voids: Nanopores In Sic, David C. Look, Z-Q. Fang, S. Soloviev, T. S. Sudarshan, J. J. Boeckl

Physics Faculty Publications

Deep level transient spectroscopy in nanoporous, n-type SiC reveals a new type of deep (˜0.8 eV) trap that can hold more than 100 electrons and that has anomalous capture and emission behavior. Here we quantitatively explain these effects with a new, general formalism that treats both emission and capture in the presence of dynamic energy barriers, resulting from the charging and discharging of states on the internal surfaces of voids, such as pores or nanopipes. The capture kinetics display a logarithmic time dependence over a certain filling range, as has often been observed in connection with dislocation-related trapping.

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Remote Hydrogen Plasma Doping Of Single Crystal Zno, Yuri M. Strzhemechny, Howard L. Mosbacker, David C. Look, Donald C. Reynolds, Cole W. Litton, Nelson Y. Garces, Nancy C. Giles, Larry E. Halliburton, Shigeru Niki, Leonard J. Brillson Apr 2004

Remote Hydrogen Plasma Doping Of Single Crystal Zno, Yuri M. Strzhemechny, Howard L. Mosbacker, David C. Look, Donald C. Reynolds, Cole W. Litton, Nelson Y. Garces, Nancy C. Giles, Larry E. Halliburton, Shigeru Niki, Leonard J. Brillson

Physics Faculty Publications

We demonstrate that remote plasma hydrogenation can increase electron concentrations in ZnO single crystals by more than an order of magnitude. We investigated the effects of this treatment on Hall concentration and mobility as well as on the bound exciton emission peak I4 for a variety of ZnO single crystals–bulk air annealed, Li doped, and epitaxially grown on sapphire. Hydrogen increases I4 intensity in conducting samples annealed at 500 and 600 °C and partially restores emission in the I4 range for Li-diffused ZnO. Hydrogenation increases carrier concentration significantly for the semi-insulating Li doped and epitaxial thin film …

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Reply To "Comment On 'Recombination Of Excitons Bound To Oxygen And Silicon Donors In Freestanding Gan' ", A. Wysmolek, K. P. Korona, R. Stepniewski, J. M. Baranowsky, J. Bloniarz, M. Potemski, R. L. Jones, David C. Look, J. Kuhl, Seong-Ju S. Park, S. K. Lee Apr 2004

Reply To "Comment On 'Recombination Of Excitons Bound To Oxygen And Silicon Donors In Freestanding Gan' ", A. Wysmolek, K. P. Korona, R. Stepniewski, J. M. Baranowsky, J. Bloniarz, M. Potemski, R. L. Jones, David C. Look, J. Kuhl, Seong-Ju S. Park, S. K. Lee

Physics Faculty Publications

In their Comment on our publication [Phys. Rev. B 66, 245317 (2002)], Freitas et al. criticize our identification of donor-bound exciton transitions and the analysis of two-electron satellite emission lines. We show that some arguments given in the Comment are in conflict with our time-resolved and magneto-optical data. We present a discussion of the intradonor transition energies and donor chemical shifts to avoid misunderstanding.

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High-Quality, Melt-Grown Zno Single Crystals, D. C. Reynolds, C. W. Litton, David C. Look, J. E. Joelscher, B. Claflin, T. C. Collins, J. Nause, B. Nemeth Feb 2004

High-Quality, Melt-Grown Zno Single Crystals, D. C. Reynolds, C. W. Litton, David C. Look, J. E. Joelscher, B. Claflin, T. C. Collins, J. Nause, B. Nemeth

Physics Faculty Publications

High-quality, melt-grown ZnO crystals are reported. The reflection and emission spectra of the melt-grown samples are compared with the same spectra from high-quality, vapor-grown ZnO crystals. We isolate the reflection and emission spectra predominantly related to the intrinsic properties associated with the wurtzite structure of the crystals. The quality of the crystals is reflected in the spectral reproduction of the intrinsic properties of the crystals. Both the ground state and the n=2 state of the free excitons associated with the A, B, and C valence bands of the crystals are spectrally observed in reflection. Assuming a hydrogenic character for …

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Comparisons Of Electron Fluxes Measured In The Crustal Fields At Mars By The Mgs Magnetometer/Electron Reflectometer Instrument With A B Field-Dependent Transport Code, Michael W. Liemohn, David L. Mitchell, Andrew F. Nagy, Jane L. Fox, Tamara W. Reimer, Yingjuan J. Ma Dec 2003

Comparisons Of Electron Fluxes Measured In The Crustal Fields At Mars By The Mgs Magnetometer/Electron Reflectometer Instrument With A B Field-Dependent Transport Code, Michael W. Liemohn, David L. Mitchell, Andrew F. Nagy, Jane L. Fox, Tamara W. Reimer, Yingjuan J. Ma

Physics Faculty Publications

We compare Mars Global Surveyor (MGS) magnetometer/electron reflectometer data with results from a B field–dependent kinetic transport code for ‘‘superthermal’’ electrons. The photoelectrons created on crustal field loops, when they are on the dayside, allow for the exploration of the magnetic topology and the upper atmospheric density structure. A case study of a typical orbit of the MGS satellite through the strong crustal field region in the southern hemisphere of Mars is examined. The results indicate that the low solar wind dynamic pressure during the selected orbit allowed for the expansion of the crustal field line to relatively high altitudes. …

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Fabrication And Characterization Of N-Zno/P-Algan Heterojunction Light-Emitting Diodes On 6h-Sic Substrates, Ya I. Alivov, E. V. Kalinina, A. E. Cherenkov, David C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, D. M. Bagnall Dec 2003

Fabrication And Characterization Of N-Zno/P-Algan Heterojunction Light-Emitting Diodes On 6h-Sic Substrates, Ya I. Alivov, E. V. Kalinina, A. E. Cherenkov, David C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, D. M. Bagnall

Physics Faculty Publications

We report on the fabrication of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates. Hydride vapor phase epitaxy was used to grow p-type AlGaN, while chemical vapor deposition was used to produce the n-type ZnO layers. Diode-like, rectifying I-V characteristics, with threshold voltage ~3.2 V and low reverse leakage current ~10-7 A, are observed at room temperature. Intense ultraviolet emission with a peak wavelength near 389 nm is observed when the diode is forward biased; this emission is found to be stable at temperatures up to 500 K and shown to originate from recombination within the ZnO.

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Evidence Of The Zn Vacancy Acting As The Dominant Acceptor In N-Type Zno, F. Tuomisto, V. Ranki, K. Saarinen, David C. Look Nov 2003

Evidence Of The Zn Vacancy Acting As The Dominant Acceptor In N-Type Zno, F. Tuomisto, V. Ranki, K. Saarinen, David C. Look

Physics Faculty Publications

We have used positron annihilation spectroscopy to determine the nature and the concentrations of the open volume defects in as-grown and electron irradiated (Eel=2   MeV, fluence 6×1017   cm-2) ZnO samples. The Zn vacancies are identified at concentrations of [VZn]≃2×1015   cm-3 in the as-grown material and [VZn]≃2×1016   cm-3 in the irradiated ZnO. These concentrations are in very good agreement with the total acceptor density determined by temperature dependent Hall experiments. Thus, the Zn vacancies are dominant acceptors in both as-grown and irradiated ZnO.

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Observation Of 430 Nm Electroluminescence From Zno/Gan Heterojunction Light-Emitting Diodes, Ya I. Alivov, J. E. Van Nostrand, David C. Look, M. V. Chukichev, B. M. Ataev Oct 2003

Observation Of 430 Nm Electroluminescence From Zno/Gan Heterojunction Light-Emitting Diodes, Ya I. Alivov, J. E. Van Nostrand, David C. Look, M. V. Chukichev, B. M. Ataev

Physics Faculty Publications

In this work, we report on the growth, fabrication, and device characterization of wide-band-gap heterojunction light-emitting diodes based on the n-ZnO/p-GaN material system. The layer structure is achieved by first growing a Mg-doped GaN film of thickness 1 μm on Al2O3(0001) by molecular-beam epitaxy, then by growing Ga-doped ZnO film of thickness 1 μm by chemical vapor deposition on the p-GaN layer. Room-temperature electroluminescence in the blue-violet region with peak wavelength 430 nm is observed from this structure under forward bias. Light–current characteristics of these light-emitting diodes are reported, and a superlinear …

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Remote Hydrogen Plasma Processing Of Zno Single Crystal Surfaces, Yuri M. Strzhemechny, John Nemergut, Phillip E. Smith, Junjik Bae, David C. Look, Leonard J. Brillson Oct 2003

Remote Hydrogen Plasma Processing Of Zno Single Crystal Surfaces, Yuri M. Strzhemechny, John Nemergut, Phillip E. Smith, Junjik Bae, David C. Look, Leonard J. Brillson

Physics Faculty Publications

We have studied the effects of remote hydrogen plasma treatment on the defect characteristics in single crystal ZnO. Temperature-dependent (9–300 K) and excitation intensity-dependent photoluminescence spectra reveal that H-plasma exposure of ZnO effectively suppresses the free-exciton transition and redistributes intensities in the bound-exciton line set and two-electron satellites with their phonon replicas. The resultant spectra after hydrogenation exhibit a relative increase in intensity of the I4 (3.363 eV) peak, thought to be related to a neutral donor bound exciton, and a peak feature at 3.366 eV with a distinctly small thermal activation energy. Hydrogenation also produces a violet 100 …

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On The Nitrogen Vacancy In Gan, David C. Look, Gary C. Farlow, P. J. Drevinsky, D. F. Bliss, J. R. Sizelove Oct 2003

On The Nitrogen Vacancy In Gan, David C. Look, Gary C. Farlow, P. J. Drevinsky, D. F. Bliss, J. R. Sizelove

Physics Faculty Publications

The dominant electrically active defect produced by 0.42 MeV electron irradiation in GaN is a 70 meV donor. Since only N-sublattice displacements can be produced at this energy, and since theory predicts that the N interstitial is a deep acceptor in n-type GaN, we argue that the 70 meV donor is most likely the isolated N vacancy. The background shallow donors, in the 24–26 meV range, actually decrease in concentration, probably due to interactions with mobile N interstitials that are produced by the irradiation. Thus, the recent assignment of a photoluminescence (PL) line as an exciton bound to a …

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