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Articles 31 - 33 of 33
Full-Text Articles in Physics
Anisotropic Magnetoresistance In The Organic Superconductor Β″–(Bedt-Ttf)2sf5ch2cf2so3, X. Su, F. Zuo, J. A. Schlueter, Jack M. Williams, P. G. Nixon, Rolf Walter Winter, Gary L. Gard
Anisotropic Magnetoresistance In The Organic Superconductor Β″–(Bedt-Ttf)2sf5ch2cf2so3, X. Su, F. Zuo, J. A. Schlueter, Jack M. Williams, P. G. Nixon, Rolf Walter Winter, Gary L. Gard
Chemistry Faculty Publications and Presentations
In this paper, we report transport measurements of interlayer magnetoresistance with field parallel and perpendicular to the current direction in an all organic superconductor β″–(BEDT-TTF)₂SF₅CH₂CF₂SO₃. For H∥I, the isothermal magnetoresistance R(H) at low temperatures (T
Review Of Hall Effect And Magnetoresistance Measurements In Gaas Materials And Devices, David C. Look
Review Of Hall Effect And Magnetoresistance Measurements In Gaas Materials And Devices, David C. Look
Physics Faculty Publications
The use of magnetic fields in the electrical characterization of semiconductor materials is familiar to everyone in the form of Hall‐effect measurements. However, there is another magnetic‐field‐based phenomenon, magnetoresistance (MR), which is highly useful but not nearly so familiar to the majority of workers. One of the unique features of MR measurements is their applicability to common device structures, in particular, field‐effect transistors (FETs) and contact‐resistance patterns. We will show how channel mobility information can be extracted from the MR data in metal‐semiconductor FETs (MESFETs) and modulation‐doped heterostructure FETs (MODFETs), and also how the material under ohmic contacts can be …
Electrical Characterization Of Ion Implantation Into Gaas, David C. Look
Electrical Characterization Of Ion Implantation Into Gaas, David C. Look
Physics Faculty Publications
Recent advances in the characterization of ion‐implanted samples have included whole wafer mapping (topography) and depth profiling techniques. We review several methods for mapping electrical parameters, including the dark‐spot resistance (DSR), and the microwave photoconductance techniques. In addition, we suggest a new photo‐Hall technique which would allow mobility and carrier‐concentration mapping as well as that of resistivity . Finally, we review methods for obtaining ρ, μ, and depth profiles, with particular emphasis on the application of the magnetoresistance techniques in actual field‐effect transistor structures.