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Tunneling Anisotropic Magnetoresistance In A Magnetic Tunnel Junction With Half-Metallic Electrodes, John D. Burton, Evgeny Y. Tsymbal
Tunneling Anisotropic Magnetoresistance In A Magnetic Tunnel Junction With Half-Metallic Electrodes, John D. Burton, Evgeny Y. Tsymbal
Evgeny Tsymbal Publications
Tunneling anisotropic magnetoresistance (TAMR) is the difference in resistance of a magnetic tunnel junction due to a change in magnetization direction of one or both magnetic electrodes with respect to the flow of current. We present the results of first-principles density functional calculations of the TAMR effect in magnetic tunnel junctions with La0.7Sr0.3MnO3 (LSMO) electrodes and a SrTiO3 (STO) tunneling barrier. We find an ∼500% difference in resistance between magnetization in the plane and out of the plane. This large TAMR effect originates from the half-metallic nature of LSMO: When magnetization is out of …