Physics Commons^™

Magnetoresistance In Non-Magnetic Semimetals And Quantum Wells, Jing Xu

Graduate Research Theses & Dissertations

Magnetic field induced resistance change is conventionally termed as magnetoresistance (MR), which is usually related to magnetism and plays crucial roles in applications such as sensors and storage devices. In a single-band nonmagnetic material, the semiclassical Boltzmann equation approach gives rise to a magnetic field independent resistivity. With the recent discovery of topological materials, extremely large magnetoresistance (XMR) and negative longitudinal magnetoresistance (NLMR) have been observed in a variety of materials. In this dissertation I investigated XMRs in the rare-earth monopnictides (LaSb and YSb), which are non-saturating with increasing magnetic field, accompanying with a turn-on temperature behavior of the magnetoresistivity. …

Quantum And Classical Transport Of 2d Electrons In The Presence Of Long And Short Range Disorder, Jesse Kanter

Dissertations, Theses, and Capstone Projects

This work focuses on the study of electron transport of 2-D electron gas systems in relation to both fundamental properties of the systems such as disorder and scattering mechanisms, as well as unique magnetoresistance (MR) effects. A large portion of the discussion is built around the use of an in plane magnetic field to vary the ratio between the Zeeman energy between electrons of different spins and the Landau level spacing, creating a tool to control the quantization of the density of states (DOS).

This tool is first used to isolate Quantum Positive Magnetoresistance (QPMR), which grants insight to the …

Effects Of B And C Doping On Tunneling Magnetoresistance In Cofe/Mgo Magnetic Tunnel Junctions, Andy Paul Chen, John D. Burton, Evgeny Y. Tsymbal, Yuan Ping Feng, Jingsheng Chen

Evgeny Tsymbal Publications

Using density-functional theory calculations, we investigate the dominant defects formed by boron (B) and carbon (C) impurities in a CoFe/MgO/CoFe magnetic tunnel junction (MTJ) and their influence on conductivity and tunneling magnetoresistance (TMR). We find that, in the O-poor conditions relevant to experiment, B forms the substitutional defect B_Co and C forms the interstitial site C_i at the CoFe/MgO interface. The C-doped MTJ is predicted to have a significantly higher TMR than the B-doped MTJ. This is due to interface state densities associated with the majority spin Δ₁-symmetry bands being more heavily suppressed by the B …

A Brief Review Of Ferroelectric Control Of Magnetoresistance In Organic Spin Valves, Xiaoshan Xu

Xiaoshan Xu Papers

Magnetoelectric coupling has been a trending research topic in both organic and inorganic materials and hybrids. The concept of controlling magnetism using an electric field is particularly appealing in energy efficient applications. In this spirit, ferroelectricity has been introduced to organic spin valves to manipulate the magneto transport, where the spin transport through the ferromagnet/organic spacer interfaces (spinterface) are under intensive study. The ferroelectric materials in the organic spin valves provide a knob to vary the interfacial energy alignment and the interfacial crystal structures, both are critical for the spin transport. In this review, we introduce the recent efforts of …

Probing Quantum Transport In Three-Terminal Nanojunctions, Meghnath Jaishi

Dissertations, Master's Theses and Master's Reports

One-dimensional (1D) nanoscale systems—structures with the lateral dimensions ranging from 1 nm to 100 nm — have received significant research interest due to their unique structure-guided properties that promise functionalities far more superior than their bulk counterparts. The quantum confinement effect in 1D nanostructures provides us with a very powerful tool to tune their electrical, magnetic, optical and thermal properties and opens the gateway for their multifunctional usages in next-generation electronics. In particular, carbon nanotubes and semiconductor nanowires are found to offer tremendous opportunities to form the junction devices with controlled electronic and optoelectronic properties crucial to predictable device functions. …

The Effects Of Tilted Magnetic Fields On Quantum Transport In 2d Electron Systems, William A. Mayer

Dissertations, Theses, and Capstone Projects

There exists a myriad of quantum transport phenomena in highly mobile 2D electrons placed in a perpendicular magnetic field. We study the effects of tilted magnetic field on these transport properties to understand how the energy spectrum evolves. We observe significant changes of the electron transport in quantum wells of varying widths with high electron densities at high filling factors. In narrow quantum wells the spin splitting of Landau levels due to Zeeman effect is found to be the dominant mechanism reducing Quantum Positive Magnetoresistance. In wider quantum wells with two populated subbands Magnetointersubband oscillations appear to exhibit effects from …

Tunneling Anisotropic Magnetoresistance In A Magnetic Tunnel Junction With Half-Metallic Electrodes, John D. Burton, Evgeny Y. Tsymbal

Evgeny Tsymbal Publications

Tunneling anisotropic magnetoresistance (TAMR) is the difference in resistance of a magnetic tunnel junction due to a change in magnetization direction of one or both magnetic electrodes with respect to the flow of current. We present the results of first-principles density functional calculations of the TAMR effect in magnetic tunnel junctions with La_0.7Sr_0.3MnO₃ (LSMO) electrodes and a SrTiO₃ (STO) tunneling barrier. We find an ∼500% difference in resistance between magnetization in the plane and out of the plane. This large TAMR effect originates from the half-metallic nature of LSMO: When magnetization is out of …

Electric Control Of Spin Injection Into A Ferroelectric Semiconductor, Xiaohui Liu, John D. Burton, M. Ye. Zhuravlev, Evgeny Y. Tsymbal

Evgeny Tsymbal Publications

Electric-field control of spin-dependent properties has become one of the most attractive phenomena in modern materials research due to the promise of new device functionalities. One of the paradigms in this approach is to electrically toggle the spin polarization of carriers injected into a semiconductor using ferroelectric polarization as a control parameter. Using first-principles density-functional calculations, we explore the effect of ferroelectric polarization of electron-doped BaTiO₃ (n-BaTiO₃) on the spin-polarized transmission across the SrRuO₃/n-BaTiO₃(001) interface. Our study reveals that, in this system, the interface transmission is negatively spin polarized …

Revisiting Galvanomagnetic Effects In Conducting Ferromagnets, Raymond T. Walter, Michel Viret, Surendra Singh, Laurent Bellaiche

Raymond Walter

Effect Of Tip Resonances On Tunnelling Anisotropic Magnetoresistance In Ferromagnetic Break Junctions: A First-Principles Study, John D. Burton, Renat F. Sabirianov, Julian P. Velev, O. N. Mryasov, Evgeny Y. Tsymbal

Materials Research Science and Engineering Center: Faculty Publications

First-principles calculations of electron tunneling transport in nanoscale Ni and Co break-junctions reveal strong dependence of the conductance on the magnetization direction, an effect known as tunneling anisotropic magnetoresistance TAMR. An important aspect of this phenomenon stems from resonant states localized in the electrodes near the junction break. The energy and broadening of these states is strongly affected by the magnetization orientation due to spin-orbit coupling, causing TAMR to be sensitive to bias voltage on a scale of a few millivolts. Our results bear a resemblance to recent experimental data and suggest that TAMR driven by resonant states is a …

Interface Effects In Spin-Dependent Tunneling, Evgeny Y. Tsymbal, Kirill D. Belashchenko, Julian P. Velev, Sitaram Jaswal, Mark Van Schilfgaarde, Ivan I. Oleynik, Derek A. Stewart

Evgeny Tsymbal Publications

In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible application in random access memories and magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. One such question is the role of interfaces in MTJs and their effect on the spin polarization of the tunneling current and TMR. In this paper we consider different models which suggest that the …

Diluted Magnetic Semiconductors Based On Sb2àXvxte3 „0.01ïXï0.03., Jeffrey Dyck, Pavel Hájek, Petr LošŤÁK, Ctirad Uher

Jeffrey Dyck

We report on a diluted magnetic semiconductor based on the [formula] tetradymite structure doped with very low concentrations of vanadium (1—3 at. %). The anomalous transport behavior and robust magnetic hysteresis loops observed in magnetotransport and magnetic measurements are experimental manifestations of the ferromagnetic state in these materials. The [formula] exchange between holes and vanadium [formula] spins is estimated from the behavior of the magnetoresistance. A Curie temperature of at least 22 K is observed for [formula] This discovery offers possibilities for exploring magnetic properties of other tetradymite structure semiconductors doped with a wide range of [formula] transition metals.

Effect Of Ni On The Transport And Magnetic Properties Of Co1àXnixsb3, Jeffrey Dyck, Wei Chen, Jihui Yang, Gregory P. Meisner, Ctirad Uher

Jeffrey Dyck

The filled skutterudite compounds based on the binary skutterudite [formula] are currently being investigated for their potential applications as thermoelectric materials. One route to optimization of these compounds is by doping on the Co site. An obvious candidate for an n-type dopant is Ni, since it has one more electron in its valence shell than Co. Up to now, however, only high concentrations of Ni in [formula] have been studied; and the valence of Ni in this compound and its influence on the transport and magnetic properties has been an open question. We present electrical resistivity, thermopower, Hall effect, magnetoresistance, …