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Observation Of The Kapitza-Dirac Effect, Daniel L. Freimund, Kayvan Aflatooni, Herman Batelaan
Observation Of The Kapitza-Dirac Effect, Daniel L. Freimund, Kayvan Aflatooni, Herman Batelaan
Department of Physics and Astronomy: Faculty Publications
In their famous 1927 experiment, Davisson and Germer observed the diffraction of electrons by a periodic material structure, so showing that electrons can behave like waves. Shortly afterwards, Kapitza and Dirac predicted that electrons should also be diffracted by a standing light wave. This Kapitza-Dirac effect is analogous to the diffraction of light by a grating, but with the roles of the wave and matter reversed. The electron and the light grating interact extremely weakly, via the ‘ponderomotive potential,’ so attempts to measure the Kapitza-Dirac effect had to wait for the development of the laser. The idea that the underlying …
Two-Center Effect On Low-Energy Electron Emission In Collisions Of 1-Mev/U Bare Ions With Atomic Hydrogen, Molecular Hydrogen, And Helium: Ii. H2 And He, Lokesh C. Tribedi, P. Richard, L. Gulya´S, M. Eugene Rudd
Two-Center Effect On Low-Energy Electron Emission In Collisions Of 1-Mev/U Bare Ions With Atomic Hydrogen, Molecular Hydrogen, And Helium: Ii. H2 And He, Lokesh C. Tribedi, P. Richard, L. Gulya´S, M. Eugene Rudd
M. Eugene Rudd Publications
We have studied the energy and angular distributions of low-energy electron emission in collisions of bare carbon ions of 1-MeV/u energy with He and H2 targets. The double-differential cross sections (DDCS’s) are measured for electrons with energies between 0.5 and 300 eV emitted within an angular range of 15° to 160°. The large forward-backward asymmetry observed in the angular distributions is explained in terms of the two-center effect. Single differential cross sections (SDCS’s) and total cross sections are also derived by integrating the DDCS’s over emission angles and energies. The data are compared with different theoretical calculations based on …
Epitaxial Growth Of Pb(Zr0.2ti0.8)O3 On Si And Its Nanoscale Piezoelectric Properties, A. Lin, X. Hong, V. Wood, A. A. Verevkin, C. H. Ahn, R. A. Mckee, F. J. Walker, E. D. Specht
Epitaxial Growth Of Pb(Zr0.2ti0.8)O3 On Si And Its Nanoscale Piezoelectric Properties, A. Lin, X. Hong, V. Wood, A. A. Verevkin, C. H. Ahn, R. A. Mckee, F. J. Walker, E. D. Specht
Xia Hong Publications
We have demonstrated a route to epitaxial Pb(Zr0.2Ti0.8)O3 on (001) Si that exhibits a uniform piezoelectric response down to nanoscale levels through the utilization of an insulating, single-crystalline SrTiO3 transition layer. These structures, which were grown by a combination of molecular-beam epitaxy and off-axis magnetron sputtering, have a surface roughness of <5 Å, with piezoelectric microscopy measurements revealing a piezoelectric coefficient of ~50 pm/V that is switchable down to sub-100-nm dimensions.