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Atomic, Molecular and Optical Physics

Old Dominion University

2008

Articles 1 - 6 of 6

Full-Text Articles in Physics

Investigation Of (E, 2e) Collisions And Related Phenomena, Jason Manuel Martinez Jul 2008

Investigation Of (E, 2e) Collisions And Related Phenomena, Jason Manuel Martinez

Physics Theses & Dissertations

In this thesis I investigate (e, 2e) processes, or electron impact ionization, using several theoretical methods. I first examine the problem using the Born approximations, particularly the Distorted Wave Born Approximation (DWBA), focusing on the underlying processes that dominate for ionization of the 2p state of Argon and Magnesium. I investigate as well the ionization of helium and hydrogen and use the simplicity of the approximation to probe the incident particle effects on the Helium cross section. In both cases the results are compared with experiment. I also produce cross section results for ions near threshold, a regime that …

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Extended Tuning Of An Injection-Locked Diode Laser, M. K. Shaffer, G. Ranjit, C. I. Sukenik Apr 2008

Extended Tuning Of An Injection-Locked Diode Laser, M. K. Shaffer, G. Ranjit, C. I. Sukenik

Physics Faculty Publications

We have investigated the application of an electronic feedback technique recently reported by Repasky, et.al. [Appl. Opt. 45, 9013 (2006)] to an injection-locked semiconductor diode laser. We find that without electronic feedback, the injection-locked slave laser will only follow the master for less than 1 GHz, but once the electronic feedback is applied, the slave laser is capable of following for more than 20 GHz, corresponding to the full scan range of the master laser.

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Investigation Of Loading Of Pulsed And Continuous-Wave Optical Dipole Force Traps, M. Shiddiq, E. M. Ahmed, M. D. Havey, C. I. Sukenik Apr 2008

Investigation Of Loading Of Pulsed And Continuous-Wave Optical Dipole Force Traps, M. Shiddiq, E. M. Ahmed, M. D. Havey, C. I. Sukenik

Physics Faculty Publications

We have investigated the behavior of an optical dipole force trap realized using a mode-locked Nd:YAG laser and have compared performance to a continuous-wave (cw) trap built using the same laser but running in a cw mode. The traps are used to confine ultracold 85Rb atoms which are loaded from a magneto-optical trap (MOT). In most respects, the two traps behave similarly over a wide range of laser parameters provided that the average potential well depth is the same; however, there is a notable difference in the dipole trap loading efficiency dependence on the detuning of the MOT trap laser …

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Photoassociative Spectroscopy Of Ultracold Metastable Argon And Study Of Dual Species Trap Loss In A Rubidium-Metastable Argon Mot, Michael K. Shaffer Apr 2008

Photoassociative Spectroscopy Of Ultracold Metastable Argon And Study Of Dual Species Trap Loss In A Rubidium-Metastable Argon Mot, Michael K. Shaffer

Physics Theses & Dissertations

This dissertation presents the findings of two experimental investigations in ultracold atomic and molecular physics: The study of the dual species trap loss in a rubidium - metastable argon magneto-optical trap and the photoassociative spectroscopy of ultracold metastable argon. The interspecies trap loss rate coefficients have been measured for ultracold collisions between 85Rb and 40Ar* in a dual-species magneto-optical trap (MOT) and the two rates have been found to be approximately equal over the range of intensities studied with values of β'Rb–Ar* = 3.0 ± 1.3 × 10-11 cm3/s and β'Ar*–Rb = 1.9 …

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Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali Jan 2008

Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The effects of laser-induced electronic excitations on the self-assembly of Ge quantum dots on Si (100) - (2×1) grown by pulsed laser deposition are studied. Electronic excitations due to laser irradiation of the Si substrate and the Ge film during growth are shown to decrease the roughness of films grown at a substrate temperature of ∼120 °C. At this temperature, the grown films are nonepitaxial. Electronic excitation results in the formation of an epitaxial wetting layer and crystalline Ge quantum dots at ∼260 °C, a temperature at which no crystalline quantum dots form without excitation under the same deposition conditions. …

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Activation Energy Of Surface Diffusion And Terrace Width Dynamics During The Growth Of In (4×3) On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali Jan 2008

Activation Energy Of Surface Diffusion And Terrace Width Dynamics During The Growth Of In (4×3) On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The nucleation and growth of indium on a vicinal Si (100) - (2×1) surface at high temperature by femtosecond pulsed laser deposition was investigated by in situ reflection high energy electron diffraction (RHEED). RHEED intensity relaxation was observed for the first ∼2 ML during the growth of In (4×3) by step flow. From the temperature dependence of the rate of relaxation, an activation energy of 1.4±0.2 eV of surface diffusion was determined. The results indicate that indium small clusters diffused to terrace step edges with a diffusion frequency constant of (1.0±0.1) × 1011 s-1. The RHEED specular …

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