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Full-Text Articles in Inorganic Chemistry
Synthesis And Characterization Of Mesoporous Silica Membranes Modified By Atomic And Molecular Layer Deposition, David Emmett Cassidy
Synthesis And Characterization Of Mesoporous Silica Membranes Modified By Atomic And Molecular Layer Deposition, David Emmett Cassidy
Electronic Theses and Dissertations
Inorganic membranes offer a means for chemical separations in a variety of applications including chemical processing, drug delivery systems, battery separators and fuel cells. There is currently a “pore size gap” in silica membranes between 1-2 nanometers. Synthesizing membranes with a fine control of the pore size and distribution within that gap is a significant challenge. This thesis reports findings on using atomic and molecular layer deposition as new synthesis approaches to controlling pore size and chemical functionality of silica membranes. Mesoporous silica membranes, prepared using surfactant-templates with pore diameters ~4nm, were modified using atomic layer deposition and molecular layer …
Modification Of Semi-Metal Oxide And Metal Oxide Powders By Atomic Layer Deposition Of Thin Films, Mark Q. Snyder
Modification Of Semi-Metal Oxide And Metal Oxide Powders By Atomic Layer Deposition Of Thin Films, Mark Q. Snyder
Electronic Theses and Dissertations
This work describes two methods of modifying, and the subsequent characterizing of, oxide nanopowders. The first method, atomic layer deposition, or ALD, is a series of surface-limited reactions that are repeated to deposit a thin, inorganic film on the surface of the nanopowder. Deposition of a thin film is a useful method to alter the surface properties of a material while retaining its bulk properties. Part of this thesis concerns the understanding of the growth mechanism of thin film titanium nitride (a material known for thermal and chemical stability as well as electronic conductivity) on silica through the ALD process. …
Stabilization Of Rutile-Related Thin Film On Tio2 Substrates, Youngnam Cho
Stabilization Of Rutile-Related Thin Film On Tio2 Substrates, Youngnam Cho
Electronic Theses and Dissertations
Conducting metal oxide thin films are of broad interest because they have a wide variety of magnetic and electronic properties. Materials exist that range from superconducting to insulating, are ferromagnetic and are ferroelectric. These properties make thin conducting oxide films attractive for many industrial applications. A class of metal oxides exists that adapt the rutile crystal structure; the structure of the mineral rutile, TiO2. These metal oxides have the general formula MO2 where M is a metal cation of valence +4. Metal oxides crystallizing in the rutile structure also display a wide variety of physical properties. The …