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Full-Text Articles in Physical Sciences and Mathematics

Physical Properties Of Spray Pyrolysed Cds Thin Films, A. Ashour Jan 2003

Physical Properties Of Spray Pyrolysed Cds Thin Films, A. Ashour

Turkish Journal of Physics

Cadmium sulphide (CdS) thin films were prepared by chemical spray-pyrolysis technique. Cleaned glass substrates were used. The substrate temperature was varied in the range 200 -- 400 °C and seems to be one of the more important parameters affecting the physical properties of the semiconductor. The films were characterized by X-ray diffraction (XRD). XRD patterns indicated the presence of single-phase hexagonal CdS. The resistivity of the as-deposited films was found to vary in the range 10^3 - 10^5 \Omega. Cm, depending on the substrate temperature. Direct band gap values of 2.39--2.42 eV were obtained from optical absorption measurements.


Qce: A Simulator For Quantum Computer Hardware, Kristel Michielsen, Hans De Raedt Jan 2003

Qce: A Simulator For Quantum Computer Hardware, Kristel Michielsen, Hans De Raedt

Turkish Journal of Physics

The Quantum Computer Emulator (QCE) described in this paper consists of a simulator of a generic, general purpose quantum computer and a graphical user interface. The latter is used to control the simulator, to define the hardware of the quantum computer and to debug and execute quantum algorithms. QCE runs in a Windows 98/NT/2000/ME/XP environment. It can be used to validate designs of physically realizable quantum processors and as an interactive educational tool to learn about quantum computers and quantum algorithms. A detailed exposition is given of the implementation of the CNOT and the Toffoli gate, the quantum Fourier transform, …


High-Pressure Phase Transition In Some Alkali Halides Using Interatomic Potential Model, Harun Reşi̇t Yazar Jan 2003

High-Pressure Phase Transition In Some Alkali Halides Using Interatomic Potential Model, Harun Reşi̇t Yazar

Turkish Journal of Physics

We have predicted the phase transition pressure in some alkali halides NaCl and KCl using an interatomic potential approach based on a rigid ion model. We have obtained phase transition pressures 28.69 and 2.4 GPa, respectively, and are in close agreement with their corresponding experimental transition pressures 29.0 and 2.0 GPa. This approach is promising with respect to the prediction of the phase transition pressures of other alkali halides.


Structural, Electrical And Spectral Studies On Double Rare-Earth Orthoferrites La_{1-X}Nd_Xfeo_3, O.M. Hemeda, Mohsen Mohamed Barakat, D. M. Hemeda Jan 2003

Structural, Electrical And Spectral Studies On Double Rare-Earth Orthoferrites La_{1-X}Nd_Xfeo_3, O.M. Hemeda, Mohsen Mohamed Barakat, D. M. Hemeda

Turkish Journal of Physics

Samples of double rare-earth ferrite La_{1-x}Nd_xFeO_3 are synthesized by a high-temperature double sintering ceramic technique. X-ray diffraction shows that all compounds have an orthorhombic structure. The values of lattice parameter and the volume of the unit cell, changes with increasing Nd^{3+} content. The Goldschmidt tolerance factor decreases and goes far from unity with increasing Nd content. The samples containing Nd ions with x = 0.1, 0.2 and 0.3 have higher resistivity than that of LaFeO_{3}, but for x \ge 0.4 the resistivity decreases. The results indicate the presence of extrinsic semiconducting properties up to 100 °C above which the hopping …


Admittance And Impedance Spectroscopy On Cu(In,Ga)Se_2 Solar Cells, A. Sertap Kavasoglu, Habi̇be Bayhan Jan 2003

Admittance And Impedance Spectroscopy On Cu(In,Ga)Se_2 Solar Cells, A. Sertap Kavasoglu, Habi̇be Bayhan

Turkish Journal of Physics

The present work reports some experimental results on the electrical properties of high efficiency ZnO/CdS/Cu(In,Ga)Se_2 heterojunction solar cells. Admittance spectroscopy has been employed for characterisation of the bulk and interface levels in the absorber Cu(In,Ga)Se_2 layer. The temperature dependent capacitance-frequency analysis indicated an emission from a shallow acceptor like defect level with an activation energy of about 75 meV. Information on the equivalent circuit model of the devices has been provided by the analysis of impedance measurements. The impedance data are presented in the Nyquist plot at several dc bias voltages at 300 K. The equivalent circuit model consisting of …


Relations For Different Resonators Of Nd:Glass And Nd:Yag Lasers, Erol Taşal, M. Selami̇ Kiliçkaya Jan 2002

Relations For Different Resonators Of Nd:Glass And Nd:Yag Lasers, Erol Taşal, M. Selami̇ Kiliçkaya

Turkish Journal of Physics

Simple relations in terms of effective g parameters are given for linear resonators that contain laser rods with curved endfaces and for symmetrical and asymmetric ring resonators of Nd:Glass and Nd:YAG lasers. The equivalence relationships of thick and thin lenses have been applied.


Effects Of Substrate Temperature On Properties Of A-Sin_X:H Films, Tayyar Güngör, Hüseyi̇n Tolunay Jan 2002

Effects Of Substrate Temperature On Properties Of A-Sin_X:H Films, Tayyar Güngör, Hüseyi̇n Tolunay

Turkish Journal of Physics

Hydrogenated amorphous silicon nitride films were prepared in an rf glow-discharge system by the decomposition of silane + nitrogen gas mixture at various substrate temperatures. The effects of substrate temperature on the electrical and optical properties of the films have been studied.


The Temperature Dependence Of The Electronic Structure Of Si \Delta-Doped Gaas, Emi̇ne Öztürk Jan 2002

The Temperature Dependence Of The Electronic Structure Of Si \Delta-Doped Gaas, Emi̇ne Öztürk

Turkish Journal of Physics

We investigated theoretically the change of electronic properties of Si \delta-doped GaAs layer as a function of temperature. We studied the influence of temperature on the donor concentration for a nonuniform distribution, which is taken as different from the known Gaussian distribution. In order to obtain the electronic structure we have calculated self-consistent Schrödinger - Poisson equations. We have seen that the change of the electronic properties as dependent on temperature is less pronounced at higher doping concentration.


Defect Structure Of Glow Peak 1 In Lif:Mg,Ti (Tld-100), A. Necmeddi̇n Yazici Jan 2002

Defect Structure Of Glow Peak 1 In Lif:Mg,Ti (Tld-100), A. Necmeddi̇n Yazici

Turkish Journal of Physics

The possible defect structure of peak 1 of LiF:Mg,Ti (TLD-100) was studied in the present work after different pre-irradiation heat treatments between 80°C and 150°C using the computer glow curve deconvolution (CGCD) method. It was shown that the defect structure of peak 1 is based on colloid centers, Ti^{+4}-3O_{2}^{-}-mixed centers and U_{1}-centers.


Effect Of Rf Power On The Electrical Properties Of Glow-Discharge A-Si:H, Hüseyi̇n Tolunay Jan 2002

Effect Of Rf Power On The Electrical Properties Of Glow-Discharge A-Si:H, Hüseyi̇n Tolunay

Turkish Journal of Physics

Hydrogenated amorphous silicon films were prepared in an rf glow-discharge system by decomposing undiluted silane at various rf power densities. Dark conductivity and photoconductivity of the films have been measured in the temperature range 420K-100K at four different photon fluxes. It was observed that both dark conductivity and photoconductivity increase with increasing rf power density.


Stimulated Polarization In \Bf Linbo_{3} And \Bf Ba_{2}Nanb_{5}O_{15} Crystals, Süleyman Çabuk, Amirullah Mamedov Jan 2002

Stimulated Polarization In \Bf Linbo_{3} And \Bf Ba_{2}Nanb_{5}O_{15} Crystals, Süleyman Çabuk, Amirullah Mamedov

Turkish Journal of Physics

Thermally Stimulated Conductivity (TSC) and thermoelectret state in LiNbO_{3} and Ba_{2}NaNb_{5}O_{15} were measured as a function of temperature and time in dark and under UV excitation at liquid nitrogen temperature. Effect of polarization and the other external influences on thermoelectret were investigated. The thermal activation energy levels of traps were determined from TSC measurements as well as parameters (electric field, temperature, etc.) which are necessary for characterizing thermoelectrets were obtained.


The B --> S G G Decay In The General Two Higgs Doublet Model, E. O. İltan Jan 2002

The B --> S G G Decay In The General Two Higgs Doublet Model, E. O. İltan

Turkish Journal of Physics

We study the decay width of the inclusive process b --> s g g in the two Higgs doublet model with three-level flavor changing neutral currents (model III). We analyse the dependencies of the differential decay width to the s- quark energy E_s and model III parameters, charged Higgs mass m_H_{^{±}} and Yukawa coupling \bar{\xi}_{N,bb}^D. We observe that there exist a considerable enhancement in the decay width for the relevant process. This enhancement can be reduced by choosing C_7^{eff} as negative or increasing the lower bound of m_H_{^{±}} to the large values. This is an interesting result which gives an …


Properties Of Cold And Hot Polarized Nuclear Matter With Realistic Nucleon Nucleon Interaction, S. A. Moharram Jan 2002

Properties Of Cold And Hot Polarized Nuclear Matter With Realistic Nucleon Nucleon Interaction, S. A. Moharram

Turkish Journal of Physics

The Thomas-Fermi (TF) model is used to calculate the equation of state ofthermal polarized nuclear-matter (NM) within a nonrelativistic Hartree-Fock (HF) scheme. The potential employed is a new realistic version of the density-dependent M3Y effective nucleon-nucleon (NN) interaction where the Yukawa strengths are based on the G-matrix of the Paris interaction. To study the basic properties of asymmetric nuclear matter, this potential is generalized by introducing spin and spin-isospin components into the original M3Y effective NN interaction. The resulting equation of state (EOS) is soft. The results obtained are in reasonable agreement with previous theoretical estimates.


Microstructure And Critical Current Of Hot-Pressed Ybco Ceramics, Şadan Özcan, Tezer Firat, Engi̇n Özdaş Jan 2002

Microstructure And Critical Current Of Hot-Pressed Ybco Ceramics, Şadan Özcan, Tezer Firat, Engi̇n Özdaş

Turkish Journal of Physics

The effect of hot-pressing (HPing) on the densification and the superconducting properties of YBCO were investigated. The phases and microstructure were analysed by XRD and SEM and transport properties were studied by I-V and AC susceptibility measurements. Relative density up to 93% and critical current density of 509 A/cm^{2} at 77 K were achieved through uniaxial HPing at 800°C under 325 kg/cm^{2} pressure for 4 hours. HPing raised the J_{c} from 80 A/cm^{2} to 509 A/cm^{2}. These results and AC susceptibility measurements reveal that the weak links or pinning forces were improved by increasing HPing pressure.


Experimental Investigation Of Temperature Effect On Refractive Index Of Dye Laser Liquids, Şeref Yaltkaya, Ramazan Aydin Jan 2002

Experimental Investigation Of Temperature Effect On Refractive Index Of Dye Laser Liquids, Şeref Yaltkaya, Ramazan Aydin

Turkish Journal of Physics

In this work, refractive index of selected dye laser solutions were measured by fiber optic sensor. The fiber optic probe was dipped into the liquids and according to Fresnel's Reflection Law, refractive index values were obtained at the wavelength of the laser utilized. The solutions consisted of Rhodamine 6G, Rhodamine B and Coumarin 481 dissolved in methanol, and ethylene glycol, respectively. Refractive index variations of the dye solutions and their solvents with temperature were measured and the refractive index temperature coefficient dn/dT were calculated at the wavelength of 780 nm.


The Sensitivity Of C\Rightarrow U \Gamma Decay In The Gluino-Axion Model, Müge Boz Jan 2002

The Sensitivity Of C\Rightarrow U \Gamma Decay In The Gluino-Axion Model, Müge Boz

Turkish Journal of Physics

The sensitivity of c\rightarrow u \gamma decay in the recently proposed gluino-axion model is analyzed for a light sbottom in a restricted parameter space. The decay rate enhances up to 3\%$ with respect to the SM result in a moderate range of \tan\beta values.


Near Bandedge Optical Absorption Processes In Semi Insulating And N-Type Gaas, Tacetti̇n Yildirim, Sebahatti̇n Tüzemen, Seydi̇ Doğan, Beki̇r Gürbulak, Aytunç Ateş, Muhammet Yildirim Jan 2002

Near Bandedge Optical Absorption Processes In Semi Insulating And N-Type Gaas, Tacetti̇n Yildirim, Sebahatti̇n Tüzemen, Seydi̇ Doğan, Beki̇r Gürbulak, Aytunç Ateş, Muhammet Yildirim

Turkish Journal of Physics

Near bandedge optical absorption processes in semi-insulating (SI) GaAs and Te-doped n-type GaAs crystals were investigated in the temperature range 10--300 K. We observed absorption peaks whose maximum energies E_{m}, ranging from 1.498 to 1.485 eV decrease as the temperature increases from 10 K to 100 K. The peaks for both SI and n-type GaAs disappeared above 100 K. Extrapolating the graphs of E$_{g}-E_{m} versus temperature, we observed that near bandedge absorption is overlapped by the conduction band at about 220 K and 260 K for n-type and SI samples, respectively. Furthermore, we demonstrated that the absorption in the region …


Schrödinger Quantization And Excited States Of Zitterbewegung, Selahatti̇n Gönen, Ali̇ Havare Jan 2002

Schrödinger Quantization And Excited States Of Zitterbewegung, Selahatti̇n Gönen, Ali̇ Havare

Turkish Journal of Physics

General wavefunction is expanded as power series of a variable which describes internal dynamics of particle, to show that it contains excited states of Schrödinger's Zitterbewegung.


Kinetics Of Light-Induced Metastable Defect Creation And Annealing In A-Si:H, Alp Osman Kodolbaş, Aynur Eray, Özcan Öktü Jan 2002

Kinetics Of Light-Induced Metastable Defect Creation And Annealing In A-Si:H, Alp Osman Kodolbaş, Aynur Eray, Özcan Öktü

Turkish Journal of Physics

Constant Photocurrent Method (CPM) and steady state photoconductivity measurements are used to investigate the creation of light-induced metastable defects in a-Si:H at room temperature and their annealing. Light-induced metastable defect concentration N$_{d}$ varies with exposure time t_{e}as t_{e}^{r} with r=0.34\ pm 0.02, as expected from the recombination induced weak bond breaking model [1]. The validity of a stretched exponential model is also studied [2]. From the annealing experiments, the distribution of thermal annealing activation energies is calculated following the method proposed by Hata and Wagner [3]. Defects created at room temperature show a narrow distribution of annealing activation energies peaking …


The Contributions Of Anomalous Magnetic Moment To Relativistic Landau Orbits, Ali̇ Havare, Nuri̇ Ünal Jan 2002

The Contributions Of Anomalous Magnetic Moment To Relativistic Landau Orbits, Ali̇ Havare, Nuri̇ Ünal

Turkish Journal of Physics

In this work, the contributions of anomalous magnetic moment to relativistic Landau orbits are calculated by the method of self-field quantum electrodynamics. In addition to contributions from positive energy states new terms from negative energy states that have not been taken into account before are now also included. Contributions from these terms are found to be in the same order as positive terms.


The Determination Of Thermal Annealing Effect On A-Si:H Films Coated On Glass And On Single Crystalline Of Silicon, Necmi̇ Seri̇n, Tülay Seri̇n, Ali̇ Riza Özdemi̇r, Bora Alkan, Çeli̇k Tarimci, Basri̇ Ünal Jan 2002

The Determination Of Thermal Annealing Effect On A-Si:H Films Coated On Glass And On Single Crystalline Of Silicon, Necmi̇ Seri̇n, Tülay Seri̇n, Ali̇ Riza Özdemi̇r, Bora Alkan, Çeli̇k Tarimci, Basri̇ Ünal

Turkish Journal of Physics

The aim of this study was to examine the effect of thermal annealing on hydrogenated intrinsic amorphous silicon a-Si:H films. Hydrogenated intrinsic amorphous films were seperately coated on glass and single cyrstalline silicon substrates by means of d.c. magnetron sputtering technique. a-Si:H/glass and a-Si:H/c-Si samples were annealed in the temperature range of 23-250^oC, 23-200^oC and 600-1050^oC, respectively. The effect of annealing on the a-Si:H films were examined by means of Infrared vibrational transmittance spectrum technique (IR) in the wavenumber range 4000-400 cm^{-1} and Scanning Electron Microsope (SEM). The results were interpreted in terms of hydrogen diffusion.


Preparation And Anisotropic Elastic Property Of Bi-Sr-Ca-Cu-O Whiskers, Khaliq A. Chaudhary, M. Arshad Choudhry Jan 2002

Preparation And Anisotropic Elastic Property Of Bi-Sr-Ca-Cu-O Whiskers, Khaliq A. Chaudhary, M. Arshad Choudhry

Turkish Journal of Physics

Flexible and superconducting Bi-Sr-Ca-Cu-O whiskers have been prepared by sintering the melt-quenched glassy powder at 830^oC in oxygen atmosphere. X-ray diffraction and a.c. susceptibility measurements reveal that the whiskers belong to 2212 phase with T_{c} = 79k. The whiskers possess high strength and flexibility along c-axis but were found to be weak and brittle when bent normal to the c-axis. The anisotropic micromechanical elastic property of the whiskers have been demonstrated under a low power optical microscope.


Filamentation Of Light Emission In An Infrared-Visible Image Converter With A Semiconductor Photodetector, Hi̇lal Yücel Kurt, H. S. Kiymaz, B. G. Salamov, K. Çolakoğlu Jan 2002

Filamentation Of Light Emission In An Infrared-Visible Image Converter With A Semiconductor Photodetector, Hi̇lal Yücel Kurt, H. S. Kiymaz, B. G. Salamov, K. Çolakoğlu

Turkish Journal of Physics

This work studies the light emission patterns associated with the spatial modulation of the transversal distribution of the current density in a converter cell with a GaAs semiconductor cathode. Such light emission exhibits spatial structures of current filaments depending on the feeding voltage, illumination intensity, gas pressure and the surface treatment of the electrodes. When the current is increased above the stable limit, breakdown or small current filamentations begin. However, n-GaAs exhibits an S-shaped current-density-field relation due to impact ionization of carriers from shallow donors into the conduction band under high electric fields. The assessment of the filament formation is …


Temperature Dependence Of Galvanomagnetic Properties For Lightly Doped N-Type Si, Aytunç Ateş, Beki̇r Gürbulak, Seydi̇ Doğan, Muhammet Yildirim, Sebahatti̇n Tüzemen Jan 2002

Temperature Dependence Of Galvanomagnetic Properties For Lightly Doped N-Type Si, Aytunç Ateş, Beki̇r Gürbulak, Seydi̇ Doğan, Muhammet Yildirim, Sebahatti̇n Tüzemen

Turkish Journal of Physics

The temperature dependence of Hall and magnetoresistance effects in n-type Si having a resistivity of 1400 {\Omega } cm at room temperature is studied in the temperature range of 210-320 K. The variation of transverse magnetoresistance as a function of temperature is similar to the longitudinal magnetoresistance variation in < 001 > and < 1\bar {1}0 > n-Si the samples. It is observed that, in < 001 > sample, the transverse and longitudinal magnetoresistance variation is greater than that in the < 1\bar {1}0 > sample. In both samples, the temperature dependences of magnetoresistance is in accordance to double space anisotropy parameters. In both samples, the transverse and longitudinal magnetoresistance coefficents increase with increasing …


A Method For Identifying Gluon Jets With High Purity In 3-Jet Hadronic Z Decays, Ayda Beddall Jan 2002

A Method For Identifying Gluon Jets With High Purity In 3-Jet Hadronic Z Decays, Ayda Beddall

Turkish Journal of Physics

A method for identifying gluon jets with very high purity is presented and the performance evaluated. Quark and gluon jets from Monte Carlo simulated Hadronic Z decays are identified by energy ordered jets and applying heavy flavour tagging. It is shown that quark and gluon jets can be identified with a purity of about 98%.


Dependence Of Neutron-Proton Entity Transfer On Superfluid Parameters, Hüseyi̇n Ayteki̇n Jan 2002

Dependence Of Neutron-Proton Entity Transfer On Superfluid Parameters, Hüseyi̇n Ayteki̇n

Turkish Journal of Physics

In this study the nuclear matrix elements of neutron-proton (n-p) entity transfer of even-even nuclei are investigated in the Tamm-Dancoff Approximation (TDA). These matrix elements are used for n-p entity stripping from even-even nuclei and n-p entity absorbing of even-even nuclei. It is shown that the matrix element of 0^{+} \to 0^{+} transition between {\left {Z,N} \right\rangle} and {\left {Z - 2,N - 2} \right\rangle} even-even nuclei via the 1^{+} states of {\left {Z - 1,N - 1} \right\rangle} intermediate nuclei depends only on the superfluid parameters.


The Investigation Of The E2/M1 Multipole Mixing Ratios And Deformation Parameters Of Electromagnetic Transitions In Decay Of ^{156}Gd, Mehmet Baylan, İhsan Uluer Jan 2002

The Investigation Of The E2/M1 Multipole Mixing Ratios And Deformation Parameters Of Electromagnetic Transitions In Decay Of ^{156}Gd, Mehmet Baylan, İhsan Uluer

Turkish Journal of Physics

The extended Rotation -- Vibration Model (RTV) containing different deformations for protons and neutrons is applied to ^{156}Gd nucleus. Using the Rotation-Vibration Model approach multipole mixing ratios \delta (E2/M1), deformation parameter \beta_{o} , g_{R} factors, and quadrupole moments q_{2} + and q_{o} were calculated.


Micro-Crystallographic, Optical And Transport Studies Of Cd_{0.7} Zn_{0.3} Se : Sb Thin Films, D. S. Sutrave, G. S. Shahane, V. B. Patil, L. P. Deshmukh, B. D. Sarwade Jan 2002

Micro-Crystallographic, Optical And Transport Studies Of Cd_{0.7} Zn_{0.3} Se : Sb Thin Films, D. S. Sutrave, G. S. Shahane, V. B. Patil, L. P. Deshmukh, B. D. Sarwade

Turkish Journal of Physics

Cd_{1-x}Zn_{x}Se thin film structures doped with various concentrations of trivalent antimony were chemically deposited onto glass-substrates. These structures were then characterised through the XRD, SEM, optical and electrical characterization techniques. The X-ray diffractograms of both as-prepared and Sb-doped samples were obtained and analysed. The analysis revealed that the samples are microcrystalline over the whole range of the doping concentration (0 to 2 mol %). It is striking that the intensities of hexagonal and cubic reflections of CdSe went on increasing with doping concentration upto 0.1 mol % and decreased with further increase in Sb^{3+} content in the film whereas peak …


Effect Of The Zn Concentration On The Characteristic Parameters Of Zn_{X}Cd_{1 - X}S Thin Films Developed By Spraying Pyrolysis Method Under The Nitrogen Atmosphere, Meti̇n Bedi̇r, Refi̇k Kayali, Mustafa Öztaş Jan 2002

Effect Of The Zn Concentration On The Characteristic Parameters Of Zn_{X}Cd_{1 - X}S Thin Films Developed By Spraying Pyrolysis Method Under The Nitrogen Atmosphere, Meti̇n Bedi̇r, Refi̇k Kayali, Mustafa Öztaş

Turkish Journal of Physics

The electronic and optical properties of Zn_{x}Cd _{(1- x)}S thin films (0.0 \le x \le 0.7) fabricated using the chemical spray method have been investigated in nitrogen atmosphere. The films are deposited on glass substrates at 420^oC substrate temperature. The related optical data are recorded in the wavelength range 200-700 nm. In addition, the absorption coefficient is determined and correlated with the photon energy in order to estimate the direct transition energy bandgap. The crystallite size and degree of preferential orientation were found to decrease with the increase of x and to improve upon annealing in vacuum at \cong 600^oC. …


Urbach's Rule And Optical Properties For Tlgas_{2}, Aytunç Ateş, Beki̇r Gürbulak, Muhammet Yildirim, Seydi̇ Doğan, Songül Duman, Tacetti̇n Yildirim, Sebahatti̇n Tüzemen Jan 2002

Urbach's Rule And Optical Properties For Tlgas_{2}, Aytunç Ateş, Beki̇r Gürbulak, Muhammet Yildirim, Seydi̇ Doğan, Songül Duman, Tacetti̇n Yildirim, Sebahatti̇n Tüzemen

Turkish Journal of Physics

Absorption measurements were carried out on TlGaS_{2} sample in the temperature range between 10 and 320 K in 10 K steps. There is an abrupt change in the Urbach energy at 180 K and 280 K and steepness parameter at 120 K and 220 K .Obtained from the changing of the Urbach energy, these may be phase transition temperatures. The phonon energies calculated for TlGaS_{2} is 19.7 \pm 5 meV.