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Birck and NCN Publications

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Articles 61 - 90 of 353

Full-Text Articles in Nanoscience and Nanotechnology

Quantum Criticality Analysis By Finite-Size Scaling And Exponential Basis Sets, Fahhad H. Alberbi, Sabre Kais Apr 2013

Quantum Criticality Analysis By Finite-Size Scaling And Exponential Basis Sets, Fahhad H. Alberbi, Sabre Kais

Birck and NCN Publications

We combine the finite-size scaling method with the mesh-free spectral method to calculate quantum critical parameters for a given Hamiltonian. The basic idea is to expand the exact wave function in a finite exponential basis set and extrapolate the information about system criticality from a finite basis to the infinite basis set limit. The used exponential basis set, though chosen intuitively, allows handling a very wide range of exponential decay rates and calculating multiple eigenvalues simultaneously. As a benchmark system to illustrate the combined approach, we choose the Hulthen potential. The results show that the method is very accurate and …

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Broadband Enhancement Of Spontaneous Emission From Nitrogen-Vacancy Centers In Nanodiamonds By Hyperbolic Metamaterials, Mikhail Y. Shalaginov, Satoshi Ishii, J. Liu, Joseph Irudayaraj, A. Lagutchev, Alexander V. Kildishev, Vladimir M. Shalaev Apr 2013

Broadband Enhancement Of Spontaneous Emission From Nitrogen-Vacancy Centers In Nanodiamonds By Hyperbolic Metamaterials, Mikhail Y. Shalaginov, Satoshi Ishii, J. Liu, Joseph Irudayaraj, A. Lagutchev, Alexander V. Kildishev, Vladimir M. Shalaev

Birck and NCN Publications

We experimentally demonstrate a broadband enhancement of emission from nitrogen-vacancy centers in nanodiamonds. The enhancement is achieved by using a multilayer metamaterial with hyperbolic dispersion. The metamaterial is fabricated as a stack of alternating gold and alumina layers. Our approach paves the way towards the construction of efficient single-photon sources as planar on-chip devices. (C) 2013 AIP Publishing LLC.

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Pre-Breakdown Evaluation Of Gas Discharge Mechanisms In Microgaps, Abbas Semnani, Ayyaswamy Venkattraman, Alina A. Alexeenko, Dimitrios Peroulis Apr 2013

Pre-Breakdown Evaluation Of Gas Discharge Mechanisms In Microgaps, Abbas Semnani, Ayyaswamy Venkattraman, Alina A. Alexeenko, Dimitrios Peroulis

Birck and NCN Publications

The individual contributions of various gas discharge mechanisms to total pre-breakdown current in microgaps are quantified numerically. The variation of contributions of field emission and secondary electron emission with increasing electric field shows contrasting behavior even for a given gap size. The total current near breakdown decreases rapidly with gap size indicating that microscale discharges operate in a high-current, low-voltage regime. This study provides the first such analysis of breakdown mechanisms and aids in the formulation of physics-based theories for microscale breakdown. (C) 2013 AIP Publishing LLC

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Evidence For Effective Mass Reduction In Gaas/Algaas Quantum Wells, A. T. Hatke, M. A. Zudov, J. D. Watson, Michael J. Manfra, L. N. Pfeiffer, K. W. West Apr 2013

Evidence For Effective Mass Reduction In Gaas/Algaas Quantum Wells, A. T. Hatke, M. A. Zudov, J. D. Watson, Michael J. Manfra, L. N. Pfeiffer, K. W. West

Birck and NCN Publications

We have performed microwave photoresistance measurements in high mobility GaAs/AlGaAs quantum wells and investigated the value of the effective mass. Surprisingly, the effective mass, obtained from the period of microwave-induced resistance oscillations, is found to be about 12% lower than the band mass in GaAs, m(b)*. This finding provides strong evidence for electron-electron interactions which can be probed by microwave photoresistance in very high Landau levels. In contrast, the measured magnetoplasmon dispersion revealed an effective mass which is close to m(b)*, in accord with previous studies. DOI: 10.1103/PhysRevB.87.161307

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Thermoelectric Properties Of Epitaxial Scn Films Deposited By Reactive Magnetron Sputtering Onto Mgo(001) Substrates, Polina V. Burmistrova, Jesse Maassen, Tela Favaloro, Bivas Saha, Shuaib Salamat, Yee Rui Koh, Mark S. Lundstrom, Ali Shakouri, Timothy D. Sands Apr 2013

Thermoelectric Properties Of Epitaxial Scn Films Deposited By Reactive Magnetron Sputtering Onto Mgo(001) Substrates, Polina V. Burmistrova, Jesse Maassen, Tela Favaloro, Bivas Saha, Shuaib Salamat, Yee Rui Koh, Mark S. Lundstrom, Ali Shakouri, Timothy D. Sands

Birck and NCN Publications

Epitaxial ScN(001) thin films were grown on MgO(001) substrates by dc reactive magnetron sputtering. The deposition was performed in an Ar/N-2 atmosphere at 2 x 10(-3) Torr at a substrate temperature of 850 degrees C in a high vacuum chamber with a base pressure of 10(-8) Torr. In spite of oxygen contamination of 1.6 +/- 1 at. %, the electrical resistivity, electron mobility, and carrier concentration obtained from a typical film grown under these conditions by room temperature Hall measurements are 0.22 m Omega cm, 106 cm(2) V-1 s(-1), and 2.5 x 10(20) cm(-3), respectively. These films exhibit remarkable thermoelectric …

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Length And Temperature Dependent 1/F Noise In Vertical Single-Walled Carbon Nanotube Arrays, Robert A. Sayer, Jeffrey D. Engerer, N. S. Vidhyadhiraja, Timothy S. Fisher Apr 2013

Length And Temperature Dependent 1/F Noise In Vertical Single-Walled Carbon Nanotube Arrays, Robert A. Sayer, Jeffrey D. Engerer, N. S. Vidhyadhiraja, Timothy S. Fisher

Birck and NCN Publications

We report measurements of temperature-and length-dependent 1/f noise in vertical single-walled carbon nanotube (SWCNT) arrays. Carbon nanotubes are synthesized in a porous anodic alumina template with sub-micrometer channel lengths ranging from 100 to 700 nm. A significant difference is observed in the 1/f noise magnitude of quasi-ballistic and diffusive SWCNT devices, with quasi-ballistic devices exhibiting 1/f noise levels that are one to two orders of magnitude less than diffusively conducting devices. Furthermore, 1/f noise was measured from 90 to 400 K, and the noise prefactor decreased significantly at temperatures below 250 K. (C) 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4800856]

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Atomic Force Microscopy-Coupled Microcoils For Cellular-Scale Nuclear Magnetic Resonance Spectroscopy, Charilaos Mousoulis, Teimour Maleki, Babak Ziaie, Corey Neu Apr 2013

Atomic Force Microscopy-Coupled Microcoils For Cellular-Scale Nuclear Magnetic Resonance Spectroscopy, Charilaos Mousoulis, Teimour Maleki, Babak Ziaie, Corey Neu

Birck and NCN Publications

We present the coupling of atomic force microscopy (AFM) and nuclear magnetic resonance (NMR) technologies to enable topographical, mechanical, and chemical profiling of biological samples. Here, we fabricate and perform proof-of-concept testing of radiofrequency planar microcoils on commercial AFM cantilevers. The sensitive region of the coil was estimated to cover an approximate volume of 19.4 x 10(3) mu m(3) (19.4 pl). Functionality of the spectroscopic module of the prototype device is illustrated through the detection of H-1 resonance in deionized water. The acquired spectra depict combined NMR capability with AFM that may ultimately enable biophysical and biochemical studies at the …

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Mechanism Of Fatigue Performance Enhancement In A Laser Sintered Superhard Nanoparticles Reinforced Nanocomposite Followed By Laser Shock Peening, Dong Lin, Chang Ye, Yiliang Liao, Sergey Suslov, Richard Liu, Gary J. Cheng Apr 2013

Mechanism Of Fatigue Performance Enhancement In A Laser Sintered Superhard Nanoparticles Reinforced Nanocomposite Followed By Laser Shock Peening, Dong Lin, Chang Ye, Yiliang Liao, Sergey Suslov, Richard Liu, Gary J. Cheng

Birck and NCN Publications

This study investigates the fundamental mechanism of fatigue performance enhancement during a novel hybrid manufacturing process, which combines laser sintering of superhard nanoparticles integrated nanocomposites and laser shock peening (LSP). Through laser sintering, TiN nanoparticles are integrated uniformly into iron matrix to form a nanocomposite layer near the surface of AISI4140 steel. LSP is then performed on the nanocomposite layer to generate interaction between nanoparticles and shock waves. The fundamental mechanism of fatigue performance enhancement is discussed in this paper. During laser shock interaction with the nanocomposites, the existence of nanoparticles increases the dislocation density and also helps to pin …

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Nanopatterning Of Metal-Coated Silicon Surfaces Via Ion Beam Irradiation: Real Time X-Ray Studies Reveal The Effect Of Silicide Bonding, Osman El-Atwani, Sean Gonderman, Alexander Demasi, Anastassiya Suslova, Justin Fowler, Mohamad El-Atwani, Karl Ludwig, Jean Paul Allain Mar 2013

Nanopatterning Of Metal-Coated Silicon Surfaces Via Ion Beam Irradiation: Real Time X-Ray Studies Reveal The Effect Of Silicide Bonding, Osman El-Atwani, Sean Gonderman, Alexander Demasi, Anastassiya Suslova, Justin Fowler, Mohamad El-Atwani, Karl Ludwig, Jean Paul Allain

Birck and NCN Publications

We investigated the effect of silicide formation on ion-induced nanopatterning of silicon with various ultrathin metal coatings. Silicon substrates coated with 10 nm Ni, Fe, and Cu were irradiated with 200 eV argon ions at normal incidence. Real time grazing incidence small angle x-ray scattering (GISAXS) and x-ray fluorescence (XRF) were performed during the irradiation process and real time measurements revealed threshold conditions for nanopatterning of silicon at normal incidence irradiation. Three main stages of the nanopatterning process were identified. The real time GISAXS intensity of the correlated peaks in conjunction with XRF revealed that the nanostructures remain for a …

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Full Band Calculations Of The Intrinsic Lower Limit Of Contact Resistivity, Jesse Maassen, C. Jeong, A. Baraskar, M. Rodwell, Mark S. Lundstrom Mar 2013

Full Band Calculations Of The Intrinsic Lower Limit Of Contact Resistivity, Jesse Maassen, C. Jeong, A. Baraskar, M. Rodwell, Mark S. Lundstrom

Birck and NCN Publications

The intrinsic lower limit of contact resistivity (rho(LL)(c)) for InAs, In0.53Ga0.47As, GaSb, and Si is calculated using a full band ballistic quantum transport approach. Surprisingly, our results show that rho(LL)(c) is almost independent of the semiconductor. An analytical model, derived for 1D, 2D, and 3D, correctly reproduces the numerical results and explains why rho(LL)(c) is very similar in all cases. Our analysis sets a minimal carrier density required to meet the International Technology Roadmap for Semiconductors call for rho(c) x 10(-9) Omega-cm(2) by 2023. Comparison with experiments shows there is room for improvement, which will come from optimizing interfacial properties. …

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Coupled Vibrational Modes In Multiple-Filled Skutterudites And The Effects On Lattice Thermal Conductivity Reduction, Liang Guo, Xianfan Xu, J. R. Salvador, G. P. Meisner Mar 2013

Coupled Vibrational Modes In Multiple-Filled Skutterudites And The Effects On Lattice Thermal Conductivity Reduction, Liang Guo, Xianfan Xu, J. R. Salvador, G. P. Meisner

Birck and NCN Publications

The influence of guest atoms on thermal conduction in filled skutterudites was studied using ultrafast reflectance spectroscopy. Different filling species cause coupled vibrational modes between the guest atoms and the host lattice at different frequencies, which scatter phonons in different spectral spans. Using a Debye model for the measured lattice thermal conductivity together with the measured vibration frequencies and scattering rates, it is shown that scattering due to the coupled vibrational modes has a considerable contribution to the suppression of lattice thermal conduction. This demonstrates that filling with multiple species can efficiently reduce the lattice thermal conductivity in skutterudites. (C) …

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Thermoreflectance Imaging Of Sub 100 Ns Pulsed Cooling In High-Speed Thermoelectric Microcoolers, Bjorn Vermeersch, Je-Hyeong Bahk, James Christofferson, Ali Shakouri Mar 2013

Thermoreflectance Imaging Of Sub 100 Ns Pulsed Cooling In High-Speed Thermoelectric Microcoolers, Bjorn Vermeersch, Je-Hyeong Bahk, James Christofferson, Ali Shakouri

Birck and NCN Publications

Miniaturized thin film thermoelectric coolers have received considerable attention as potential means to locally address hot spots in microprocessors. Given the highly dynamic workload in complex integrated circuits, the need arises for a thorough understanding of the high-speed thermal behavior of microcoolers. Although some prior work on transient Peltier cooling in pulsed operation is available, these studies mostly focus on theoretical modeling and typically deal with relatively large modules with time constants well into the millisecond range. In this paper, we present an extensive experimental characterization of 30 x 30 mu m(2) high-speed coplanar SiGe superlattice microcoolers subjected to 300 …

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Shape Memory Metamaterials With Tunable Thermo-Mechanical Response Via Hetero-Epitaxial Integration: A Molecular Dynamics Study, Karthik Guda Vishnu, Alejandro Strachan Mar 2013

Shape Memory Metamaterials With Tunable Thermo-Mechanical Response Via Hetero-Epitaxial Integration: A Molecular Dynamics Study, Karthik Guda Vishnu, Alejandro Strachan

Birck and NCN Publications

We show that nanoscale epitaxial superlattices (SLs) can be used to engineer the energy landscape that governs the martensitic transformation in shape memory alloys and tune their thermo-mechanical response. We demonstrate the approach using large-scale molecular dynamics simulations of a SL material consisting of alternate layers of a shape memory Ni-rich NiAl alloy and NiAl B2 alloy. The non-martensitic NiAl alloy was chosen to reduce the energy barrier that separates the martensite and austenite phases of the SL and its incorporation leads to a reduction in the thermal hysteresis of the transition. This is a desirable feature in applications involving …

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Effects Of Forming Gas Anneal On Ultrathin Ingaas Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors, Mengwei Si, Jiangjiang Gu, Xinwei Wang, Jiayi Shao, Xuefei Li, Michael J. Manfra, Roy G. Gordon, Peide D. Ye Mar 2013

Effects Of Forming Gas Anneal On Ultrathin Ingaas Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors, Mengwei Si, Jiangjiang Gu, Xinwei Wang, Jiayi Shao, Xuefei Li, Michael J. Manfra, Roy G. Gordon, Peide D. Ye

Birck and NCN Publications

InGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowire thickness have been experimentally demonstrated at sub-80 nm channel length. The effects of forming gas anneal (FGA) on the performance of these devices have been systematically studied. The 30min 400 degrees C FGA (4% H-2/96% N-2) is found to improve the quality of the Al2O3/InGaAs interface, resulting in a subthreshold slope reduction over 20mV/dec (from 117mV/dec in average to 93mV/dec). Moreover, the improvement of interface quality also has positive impact on the on-state device performance. A scaling metrics study has been carried out for FGA treated devices with channel lengths …

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Laser Direct Writing Of Silicon Field Effect Transistor Sensors, Woongsik Nam, James I. Mitchell, Chookiat Tansarawiput, Minghao Qi, Xianfan Xu Mar 2013

Laser Direct Writing Of Silicon Field Effect Transistor Sensors, Woongsik Nam, James I. Mitchell, Chookiat Tansarawiput, Minghao Qi, Xianfan Xu

Birck and NCN Publications

We demonstrate a single step technique to fabricate silicon wires for field effect transistor sensors. Boron-doped silicon wires are fabricated using laser direct writing in combination with chemical vapor deposition, which has the advantages of precise control of position, orientation, and length, and in situ doping. The silicon wires can be fabricated to have very rough surfaces by controlling laser operation parameters, and thus, have large surface areas, enabling high sensitivity for sensing. Highly sensitive pH sensing is demonstrated. We expect our method can be expanded to the fabrication of various sensing devices beyond chemical sensors. (C) 2013 American Institute …

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Deuterium Uptake In Magnetic-Fusion Devices With Lithium-Conditioned Carbon Walls, P. S. Krstic, Jean Paul Allain, C. N. Taylor, J. Dadras, S. Maeda, K. Morokuma, J. Jakowski, A. Allouche, C. H. Skinner Mar 2013

Deuterium Uptake In Magnetic-Fusion Devices With Lithium-Conditioned Carbon Walls, P. S. Krstic, Jean Paul Allain, C. N. Taylor, J. Dadras, S. Maeda, K. Morokuma, J. Jakowski, A. Allouche, C. H. Skinner

Birck and NCN Publications

Lithium wall conditioning has lowered hydrogenic recycling and dramatically improved plasma performance in many magnetic-fusion devices. In this Letter, we report quantum-classical atomistic simulations and laboratory experiments that elucidate the roles of lithium and oxygen in the uptake of hydrogen in amorphous carbon. Surprisingly, we show that lithium creates a high oxygen concentration on a carbon surface when bombarded by deuterium. Furthermore, surface oxygen, rather than lithium, plays the key role in trapping hydrogen. DOI: 10.1103/PhysRevLett.110.105001

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Thermal Transport In Sige Superlattice Thin Films And Nanowires: Effects Of Specimen And Periodic Lengths, Keng-Hua Lin, Alejandro Strachan Mar 2013

Thermal Transport In Sige Superlattice Thin Films And Nanowires: Effects Of Specimen And Periodic Lengths, Keng-Hua Lin, Alejandro Strachan

Birck and NCN Publications

We compute the thermal conductivity of superlattice (SL) thin films and nanowires for various SL periods and total specimen lengths using nonequilibrium molecular dynamics. Both types of materials exhibit similar behaviors with respect to SL period but the thermal conductivity of the thin films exhibits a significantly higher sensitivity to the specimen length. Notably, the thermal conductivity of SL thin films is smaller than those of the corresponding nanowires for specimen lengths below approximately 35 nm. These results arise from the complex dependence of the conductivities of the interfaces and the SL components on the specimen size and period. These …

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A Computational Study Of The Thermoelectric Performance Of Ultrathin Bi2te3 Films, Jesse Maassen, Mark S. Lundstrom Mar 2013

A Computational Study Of The Thermoelectric Performance Of Ultrathin Bi2te3 Films, Jesse Maassen, Mark S. Lundstrom

Birck and NCN Publications

The ballistic thermoelectric performance of ultrathin films of Bi2Te3, ranging in thickness from 1 to 6 quintuple layers, is analyzed using density functional theory combined with the Landauer approach. Our results show that the thinnest film, corresponding to a single quintuple layer, has an intrinsic advantage originating from the particular shape of its valence band, leading to a large power factor and figure-of-merit exceeding bulk Bi2Te3. The interaction between the top and bottom topological surface states is key. The thinnest film yields a six-fold increase in power factor compared to bulk. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794534]

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Limitations Of The High-Low C-V Technique For Mos Interfaces With Large Time Constant Dispersion, Ashish Verma Penumatcha, Steven Swandono, James A. Cooper Mar 2013

Limitations Of The High-Low C-V Technique For Mos Interfaces With Large Time Constant Dispersion, Ashish Verma Penumatcha, Steven Swandono, James A. Cooper

Birck and NCN Publications

We discuss the limitations of the high-low CV technique in evaluating the interface trap density (D-TT) in MOS samples with a large time constant dispersion, as occurs in silicon carbide (SiC). We show that the high-low technique can seriously underestimate D-IT for samples with large time constant dispersion, even if elevated temperatures are used to extend the range of validity.

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High-Resolution Dynamic Atomic Force Microscopy In Liquids With Different Feedback Architectures, John Melcher, David Martinez-Martin, Miriam Jaafar, Julio Gomez-Herrero, Arvind Raman Feb 2013

High-Resolution Dynamic Atomic Force Microscopy In Liquids With Different Feedback Architectures, John Melcher, David Martinez-Martin, Miriam Jaafar, Julio Gomez-Herrero, Arvind Raman

Birck and NCN Publications

The recent achievement of atomic resolution with dynamic atomic force microscopy (dAFM) [Fukuma et al., Appl. Phys. Lett. 2005, 87, 034101], where quality factors of the oscillating probe are inherently low, challenges some accepted beliefs concerning sensitivity and resolution in dAFM imaging modes. Through analysis and experiment we study the performance metrics for high-resolution imaging with dAFM in liquid media with amplitude modulation (AM), frequency modulation (FM) and drive-amplitude modulation (DAM) imaging modes. We find that while the quality factors of dAFM probes may deviate by several orders of magnitude between vacuum and liquid media, their sensitivity to tip-sample forces …

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Cross-Plane Thermal Properties Of Transition Metal Dichalcogenides, C. Muratore, V. Varshney, J. J. Gengler, J. J. Hu, J. E. Bultman, T. M. Smith, P. J. Shamberger, Bo Qiu, Xiulin Ruan, A. K. Roy, A. A. Voevodin Feb 2013

Cross-Plane Thermal Properties Of Transition Metal Dichalcogenides, C. Muratore, V. Varshney, J. J. Gengler, J. J. Hu, J. E. Bultman, T. M. Smith, P. J. Shamberger, Bo Qiu, Xiulin Ruan, A. K. Roy, A. A. Voevodin

Birck and NCN Publications

In this work, we explore the thermal properties of hexagonal transition metal dichalcogenide compounds with different average atomic masses but equivalent microstructures. Thermal conductivity values of sputtered thin films were compared to bulk crystals. The comparison revealed a > 10 fold reduction in thin film thermal conductivity. Structural analysis of the films revealed a turbostratic structure with domain sizes on the order of 5-10 nm. Estimates of phonon scattering lengths at domain boundaries based on computationally derived group velocities were consistent with the observed film microstructure, and accounted for the reduction in thermal conductivity compared to values for bulk crystals. (C) …

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Interfacial Thermal Conductance Limit And Thermal Rectification Across Vertical Carbon Nanotube/Graphene Nanoribbon-Silicon Interfaces, Ajit K. Vallabhaneni, Bo Qiu, Jiuning Hu, Yong P. Chen, Ajit K. Roy, Xiulin Ruan Feb 2013

Interfacial Thermal Conductance Limit And Thermal Rectification Across Vertical Carbon Nanotube/Graphene Nanoribbon-Silicon Interfaces, Ajit K. Vallabhaneni, Bo Qiu, Jiuning Hu, Yong P. Chen, Ajit K. Roy, Xiulin Ruan

Birck and NCN Publications

Various models were previously used to predict interfacial thermal conductance of vertical carbon nanotube (CNT)-silicon interfaces, but the predicted values were several orders of magnitude off the experimental data. In this work, we show that the CNT filling fraction (the ratio of contact area to the surface area of the substrate) is the key to remedy this discrepancy. Using molecular dynamics, we have identified an upper limit of thermal interface conductance for C-Si interface which is around 1.25GW/m(2)K, corresponding to a 100% filling fraction of carbon nanotube or graphene nanoribbon on substrate. By extrapolating to low filling fraction (similar to …

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Unidirectional Spaser In Symmetry-Broken Plasmonic Core-Shell Nanocavity, Xiangeng Meng, Urcan Guler, Alexander V. Kildishev, Koji Fujita, Katsuhisa Tanaka, Vladimir M. Shalaev Feb 2013

Unidirectional Spaser In Symmetry-Broken Plasmonic Core-Shell Nanocavity, Xiangeng Meng, Urcan Guler, Alexander V. Kildishev, Koji Fujita, Katsuhisa Tanaka, Vladimir M. Shalaev

Birck and NCN Publications

The spaser, a quantum amplifier of surface plasmons by stimulated emission of radiation, is recognized as a coherent light source capable of confining optical fields at subwavelength scale. The control over the directionality of spasing has not been addressed so far, especially for a single-particle spasing nanocavity where optical feedback is solely provided by a plasmon resonance. In this work we numerically examine an asymmetric spaser - a resonant system comprising a dielectric core capped by a metal semishell. The proposed spaser emits unidirectionally along the axis of the semishell; this directionality depends neither on the incident polarization nor on …

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Strong Heavy-To-Light Hole Intersubband Absorption In The Valence Band Of Carbon-Doped Gaas/Alas Superlattices, M. I. Hossain, Z. Ikonic, J. Watson, J. Shao, P. Harrison, Michael J. Manfra, O. Malis Feb 2013

Strong Heavy-To-Light Hole Intersubband Absorption In The Valence Band Of Carbon-Doped Gaas/Alas Superlattices, M. I. Hossain, Z. Ikonic, J. Watson, J. Shao, P. Harrison, Michael J. Manfra, O. Malis

Birck and NCN Publications

We report strong mid-infrared absorption of in-plane polarized light due to heavy-to-light hole intersubband transitions in the valence band of C-doped GaAs quantum wells with AlAs barriers. The transition energies are well reproduced by theoretical calculations including layer inter-diffusion. The inter-diffusion length was estimated to be 8 +/- 2 angstrom, a value that is consistent with electron microscopy measurements. These results highlight the importance of modeling the nanoscale structure of the semiconductors for accurately reproducing intra-band transition energies of heavy carriers such as the holes. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790305]

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Optoelectronic Measurement Of X-Ray Synchrotron Pulses: A Proof Of Concept Demonstration, Stephen M. Durbin, Aamer Mahmood, Marc W. Caffee, Sergei Savikhin, Eric M. Dufresne, Haidan Wen, Yuelin Li Feb 2013

Optoelectronic Measurement Of X-Ray Synchrotron Pulses: A Proof Of Concept Demonstration, Stephen M. Durbin, Aamer Mahmood, Marc W. Caffee, Sergei Savikhin, Eric M. Dufresne, Haidan Wen, Yuelin Li

Birck and NCN Publications

Optoelectronic detection using photoconductive coplanar stripline devices has been applied to measuring the time profile of x-ray synchrotron pulses, a proof of concept demonstration that may lead to improved time-resolved x-ray studies. Laser sampling of current vs time delay between 12 keV x-ray and 800 nm laser pulses reveal the similar to 50 ps x-ray pulse width convoluted with the similar to 200 ps lifetime of the conduction band carriers. For GaAs implanted with 8 MeV protons, a time profile closer to the x-ray pulse width is observed. The protons create defects over the entire depth sampled by the x-rays, …

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A Computational Approach To Optimize Microring Resonators For Biosensing Applications, Justin C. Wirth, B. R. Wenner, M. S. Allen, J. W. Allen, M. Qi Feb 2013

A Computational Approach To Optimize Microring Resonators For Biosensing Applications, Justin C. Wirth, B. R. Wenner, M. S. Allen, J. W. Allen, M. Qi

Birck and NCN Publications

Microcavity structures have recently found utility in chemical/biological sensing applications. The appeal of these structures over other refractive index-based sensing schemes, such as those based on surface plasmon resonance, lies in their potential for producing a highly sensitive response to binding events. High-Q devices, characterized by sharp line widths, are extremely attractive for sensing applications because the bound analyte provides an increased optical pathlength, thus shifting the resonant frequency of the device. In this work, we design and simulate resonant microrings using full-wave finite element models. In addition to structure design, integration of the biological recognition element on the resonator …

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Red-Green-Blue Light Sensitivity Of Oxide Nanowire Transistors For Transparent Display Applications, Sumi Lee, Seongmin Kim, David B. Janes, M. Meyyappan, Sanghyun Ju Jan 2013

Red-Green-Blue Light Sensitivity Of Oxide Nanowire Transistors For Transparent Display Applications, Sumi Lee, Seongmin Kim, David B. Janes, M. Meyyappan, Sanghyun Ju

Birck and NCN Publications

In this study, the sensitivity of oxide nanowire transistors under red (R, 470 nm), green (G, 530 nm), and blue (B, 625 nm) light illumination was investigated. As the wavelength of light illuminating the nanowire channel region became shorter, a negative shift of threshold voltage, degradation of subthreshold slope, and increase of on-current were observed. This phenomenon can be explained in terms of photoinduced holes, creating interfacial traps between the gate dielectric and nanowire channel or reacting with oxygen ions on the surface of the nanowires. Thus, the attempt to minimize characteristic changes due to all RGB light sources was …

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Implementation Of Quantum Logic Gates Using Polar Molecules In Pendular States, Jing Zhu, Sabre Kais, Qi Wei, Dudley Herschbach, Bretislav Friedrich Jan 2013

Implementation Of Quantum Logic Gates Using Polar Molecules In Pendular States, Jing Zhu, Sabre Kais, Qi Wei, Dudley Herschbach, Bretislav Friedrich

Birck and NCN Publications

No abstract provided.

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Quantum Algorithm And Circuit Design Solving The Poisson Equation, Yudong Cao, Anargyros Papageorgiou, Iasonas Petras, Joseph Traub, Sabre Kais Jan 2013

Quantum Algorithm And Circuit Design Solving The Poisson Equation, Yudong Cao, Anargyros Papageorgiou, Iasonas Petras, Joseph Traub, Sabre Kais

Birck and NCN Publications

The Poisson equation occurs in many areas of science and engineering. Here we focus on its numerical solution for an equation in d dimensions. In particular we present a quantum algorithm and a scalable quantum circuit design which approximates the solution of the Poisson equation on a grid with error epsilon. We assume we are given a superposition of function evaluations of the right-hand side of the Poisson equation. The algorithm produces a quantum state encoding the solution. The number of quantum operations and the number of qubits used by the circuit is almost linear in d and polylog in …

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Diffusive And Ballistic Thermo-Electric Transport, Ali Shakouri Jan 2013

Diffusive And Ballistic Thermo-Electric Transport, Ali Shakouri

Birck and NCN Publications

The efficiency of existing thermoelectric power generators is much lower than mechanical engines. We discuss the similarities and differences between solid-state thermoelectric devices and other thermal engines. In nanostructured materials, non-equilibrium energy and current transport could be important. We describe the transition between ballistic and diffusive regimes and how this can alter the thermoelectric effects and improve the energy conversion efficiency.

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