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Articles 151 - 180 of 353
Full-Text Articles in Nanoscience and Nanotechnology
Photonically Enhanced Flow Boiling In A Channel Coated With Carbon Nanotubes, Arun S. Kousalya, Chad N. Hunter, Shawn A. Putnam, Timothy Miller, Timothy S. Fisher
Photonically Enhanced Flow Boiling In A Channel Coated With Carbon Nanotubes, Arun S. Kousalya, Chad N. Hunter, Shawn A. Putnam, Timothy Miller, Timothy S. Fisher
Birck and NCN Publications
High heat dissipation rates are enabled by multi-phase cooling schemes owing to latent heat uptake. We demonstrate enhanced flow boiling from a carbon nanotube (CNT)-coated copper surface exposed to low-intensity ultraviolet (UV)-visible excitation. Compared to non-illuminated results, the average boiling incipience temperature decreased by 4.6 degrees C and heat transfer coefficients improved by 41.5% with light exposure. These improved results are attributed to augmented hydrophilicity upon exposure to UV light and possible nanoscale opto-thermal effects, and suggest opportunities for active temperature control of temperature-sensitive devices. (C) 2012 American Institute of Physics. [doi:10.1063/1.3681594]
Power Handling Of Electrostatic Mems Evanescent-Mode (Eva) Tunable Bandpass Filters, Xiaoguang Liu, Linda P.B. Katehi, William J. Chappell, Dimitrios Peroulis
Power Handling Of Electrostatic Mems Evanescent-Mode (Eva) Tunable Bandpass Filters, Xiaoguang Liu, Linda P.B. Katehi, William J. Chappell, Dimitrios Peroulis
Birck and NCN Publications
This paper presents the first theoretical and experimental study on the power handling capabilities of electrostatically tunable MEMS cavity filters. The theoretical analysis indicates that the frequency-dependent RF voltage inside a narrow-band filter may play an important role in the generation of electromechanical nonlinearities such as frequency response distortion, frequency shift, and bifurcation instability. This analysis also reveals that the filter's power handling capability is dependent on several critical factors, including the capacitive gap, stiffness of the diaphragm actuator, and the overall quality factor (Q) of the evanescent-mode (EVA) resonators. A nonlinear computer-aided design (CAD) model is proposed as a …
An All-Silicon Passive Optical Diode, Li Fan, Jian Wang, Leo T. Varghese, Hao Shen, Ben Niu, Yi Xuan, Andrew M. Weiner, Minghao Qi
An All-Silicon Passive Optical Diode, Li Fan, Jian Wang, Leo T. Varghese, Hao Shen, Ben Niu, Yi Xuan, Andrew M. Weiner, Minghao Qi
Birck and NCN Publications
A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing.
Size Effects In Niti From Density Functional Theory Calculations, Karthik Guda Vishnu, Alejandro Strachan
Size Effects In Niti From Density Functional Theory Calculations, Karthik Guda Vishnu, Alejandro Strachan
Birck and NCN Publications
We use density functional theory to characterize how size affects the relative stability of thin NiTi slabs of different crystal structures and its implication on the martensitic phase transition that governs shape memory. We calculate the surface energies of B2' phase (austenite), B19 (orthorhombic), B19' (martensite), and a body-centered orthorhombic phase, the theoretically predicted ground state. We find that (110)(B2) surfaces with in-plane atomic displacements stabilize the austenite phase with respect to B19' and BCO; thus, slabs with such orientations are predicted to exhibit a decrease in martensite transition temperature with decreasing thickness. Our calculations predict a critical thickness of …
Resolving Structure And Mechanical Properties At The Nanoscale Of Viruses With Frequency Modulation Atomic Force Microscopy, David Martinez-Martin, Carolina Carrasco, Mercedes Hernando-Perez, Pedro J. De Pablo, Julio Gomez-Herrero, Rebeca Perez, Mauricio G. Mateu, Jose L. Carrascosa, Daniel Kiracofe, John Melcher, Arvind Raman
Resolving Structure And Mechanical Properties At The Nanoscale Of Viruses With Frequency Modulation Atomic Force Microscopy, David Martinez-Martin, Carolina Carrasco, Mercedes Hernando-Perez, Pedro J. De Pablo, Julio Gomez-Herrero, Rebeca Perez, Mauricio G. Mateu, Jose L. Carrascosa, Daniel Kiracofe, John Melcher, Arvind Raman
Birck and NCN Publications
Structural Biology (SB) techniques are particularly successful in solving virus structures. Taking advantage of the symmetries, a heavy averaging on the data of a large number of specimens, results in an accurate determination of the structure of the sample. However, these techniques do not provide true single molecule information of viruses in physiological conditions. To answer many fundamental questions about the quickly expanding physical virology it is important to develop techniques with the capability to reach nanometer scale resolution on both structure and physical properties of individual molecules in physiological conditions. Atomic force microscopy (AFM) fulfills these requirements providing images …
Energy-Based Yield Criterion For Pmma From Large-Scale Molecular Dynamics Simulations, Eugenio Jaramillo, Nathaniel Wilson, Stephen Christensen, Jonathan Gosse, Alejandro Strachan
Energy-Based Yield Criterion For Pmma From Large-Scale Molecular Dynamics Simulations, Eugenio Jaramillo, Nathaniel Wilson, Stephen Christensen, Jonathan Gosse, Alejandro Strachan
Birck and NCN Publications
We use molecular dynamics (MD) with the DREIDING force field to characterize the ultimate mechanical response of amorphous poly(methyl methacrylate). We characterize how volumetric and deviatoric strains contribute to yield for a wide range of loading conditions from pure deviatoric, volume-conserving cases to isotropic volume expansion. We propose and apply an energy-based yield criterion to define yield consistently for all cases. Our results show that permanent deformation occurs when either the deviatoric or volumetric strains reach critical values, except in a narrow region around the transformation between deviatoric- and volumetric-dominated yield where the two strain invariants interact. In contrast, the …
Optimization Of Power And Efficiency Of Thermoelectric Devices With Asymmetric Thermal Contacts, Kazuaki Yazawa, Ali Shakouri
Optimization Of Power And Efficiency Of Thermoelectric Devices With Asymmetric Thermal Contacts, Kazuaki Yazawa, Ali Shakouri
Birck and NCN Publications
We report the theoretical efficiency of thermoelectric power generation with asymmetric thermal contacts to reservoirs. A key ingredient is the electrical and thermal co-optimization. Generic formula of the maximum power output and the optimum leg length are obtained. The Curzon-Ahlborn limit at maximum power can be rigorously derived when the dimensionless figure-of-merit is very large for any asymmetric thermal contact resistances. The results differ from cyclic thermodynamic engines, and some of the reasons are discussed. We also point out the similarity and differences with single-level quantum dot heat engines, which assume no explicit thermal contact resistance with reservoirs. (C) 2012 …
Computational Study Of Energy Filtering Effects In One-Dimensional Composite Nano-Structures, Raseong Kim, Mark S. Lundstrom
Computational Study Of Energy Filtering Effects In One-Dimensional Composite Nano-Structures, Raseong Kim, Mark S. Lundstrom
Birck and NCN Publications
Possibilities to improve the Seebeck coefficient S versus electrical conductance G trade-off of diffusive composite nano-structures are explored using an electro-thermal simulation framework based on the non-equilibrium Green's function method for quantum electron transport and the lattice heat diffusion equation. We examine the role of the grain size d, potential barrier height Phi(B), grain doping, and the lattice thermal conductivity kappa(L) using a one-dimensional model structure. For a uniform kappa(L), simulation results show that the power factor of a composite structure may be improved over bulk with the optimum Phi(B) being about k(B)T, where k(B) and T are the Boltzmann …
Quantum-Hall Plateau-Plateau Transition In Top-Gated Epitaxial Graphene Grown On Sic (0001), T. Shen, A. T. Neal, M. L. Bolen, Jiangjiang Gu, L. W. Engel, Michael A. Capano, Peide D. Ye
Quantum-Hall Plateau-Plateau Transition In Top-Gated Epitaxial Graphene Grown On Sic (0001), T. Shen, A. T. Neal, M. L. Bolen, Jiangjiang Gu, L. W. Engel, Michael A. Capano, Peide D. Ye
Birck and NCN Publications
We investigate the low-temperature magneto-transport properties of monolayer epitaxial graphene films formed on the Si-face of semi-insulating 4H SiC substrates by a high-temperature sublimation process. A high-k top-gate on the epitaxial graphene is realized by inserting a fully oxidized nanometer-thin aluminum film as a seeding layer, followed by an atomic layer deposition process. At low temperatures, the devices demonstrate a strong field effect by the top gate with an on/off ratio of similar to 7 and an electron mobility up to similar to 3250 cm(2)/Vs. After the observation of the half-integer quantum-Hall effect for monolayer epitaxial graphene films, detailed magneto-transport …
Laser Direct Growth Of Graphene On Silicon Substrate, Dapeng Wei, Xianfan Xu
Laser Direct Growth Of Graphene On Silicon Substrate, Dapeng Wei, Xianfan Xu
Birck and NCN Publications
We demonstrate laser direct growth of few layer graphene on a silicon substrate. In our study, a continuous wave laser beam was focused on a poly(methyl methacrylate) (PMMA)-coated silicon wafer to evaporate PMMA and melt the silicon wafer. Carbon atoms, decomposed from PMMA, were absorbed by the molten silicon surface, and then separated from silicon in the cooling process to form few-layer graphene. This Si-catalyzed method will provide a new approach and platform for applications of graphene. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675636]
Gaining Insight Into The Physics Of Dynamic Atomic Force Microscopy In Complex Environments Using The Veda Simulator, Daniel Kiracofe, John Melcher, Arvind Raman
Gaining Insight Into The Physics Of Dynamic Atomic Force Microscopy In Complex Environments Using The Veda Simulator, Daniel Kiracofe, John Melcher, Arvind Raman
Birck and NCN Publications
Dynamic atomic force microscopy (dAFM) continues to grow in popularity among scientists in many different fields, and research on new methods and operating modes continues to expand the resolution, capabilities, and types of samples that can be studied. But many promising increases in capability are accompanied by increases in complexity. Indeed, interpreting modern dAFM data can be challenging, especially on complicated material systems, or in liquid environments where the behavior is often contrary to what is known in air or vacuum environments. Mathematical simulations have proven to be an effective tool in providing physical insight into these non-intuitive systems. In …
Full Band Atomistic Modeling Of Homo-Junction Ingaas Band-To-Band Tunneling Diodes Including Band Gap Narrowing, Woo-Suhl Cho, Mathieu Luisier, Dheeraj Mohata, Suman Datta, David Pawlik, Sean L. Rommel, Gerhard Klimeck
Full Band Atomistic Modeling Of Homo-Junction Ingaas Band-To-Band Tunneling Diodes Including Band Gap Narrowing, Woo-Suhl Cho, Mathieu Luisier, Dheeraj Mohata, Suman Datta, David Pawlik, Sean L. Rommel, Gerhard Klimeck
Birck and NCN Publications
A homo-junction In0.53Ga0.47As tunneling diode is investigated using full-band, atomistic quantum transport approach based on a tight-binding model (TB) and the Non-equilibrium Green’s Function formalism. Band gap narrowing (BGN) is included in TB by altering its parameters using the Jain-Roulston model. BGN is found to be critical in the determination of the current peak and the second turn-on in the forward bias region. An empirical excess current that mimics additional recombination paths must be added to the calculation to model the diode behavior in the valley current region. Overall the presented model reproduces experimental data well.
Feasibility, Accuracy, And Performance Of Contact Block Reduction Method For Multi-Band Simulations Of Ballistic Quantum Transport, Hoon Ryu, Hong-Hyun Park, Mincheol Shin, Dragica Vasileska, Gerhard Klimeck
Feasibility, Accuracy, And Performance Of Contact Block Reduction Method For Multi-Band Simulations Of Ballistic Quantum Transport, Hoon Ryu, Hong-Hyun Park, Mincheol Shin, Dragica Vasileska, Gerhard Klimeck
Birck and NCN Publications
Numerical utilities of the contact block reduction (CBR) method in evaluating the retarded Green’s function are discussed for 3D multi-band open systems that are represented by the atomic tight-binding (TB) and continuum k * p (KP) band model. It is shown that the methodology to approximate solutions of open systems, which has been already reported for the single-band effective mass model, cannot be directly used for atomic TB systems, since the use of a set of zinc blende crystal grids makes the inter-coupling matrix non-invertible. We derive and test an alternative with which the CBR method can be still practical …
Geometrical Frustration In Nanowire Growth, K. W. Schwarz, J. Tersoff, S. Kodambaka, Y.C. Chou, F. M. Ross
Geometrical Frustration In Nanowire Growth, K. W. Schwarz, J. Tersoff, S. Kodambaka, Y.C. Chou, F. M. Ross
Birck and NCN Publications
Idealized nanowire geometries assume stable sidewalls at right angles to the growth front. Here we report growth simulations that include a mix of nonorthogonal facet orientations, as for Au-catalyzed Si. We compare these with in situ microscopy observations, finding striking correspondences. In both experiments and simulations, there are distinct growth modes that accommodate the lack of right angles in different ways-one through sawtooth-textured sidewalls, the other through a growth front at an angle to the growth axis. Small changes in conditions can reversibly switch the growth between modes. The fundamental differences between these modes have important implications for control of …
On The Accuracy Of Classical And Long Wavelength Approximations For Phonon Transport In Graphene, Dhruv Singh, Jayathi Murthy, Timothy S. Fisher
On The Accuracy Of Classical And Long Wavelength Approximations For Phonon Transport In Graphene, Dhruv Singh, Jayathi Murthy, Timothy S. Fisher
Birck and NCN Publications
This paper presents a critical evaluation of the approximations usually made in thermal conductivity modeling applied to graphene. The baseline for comparison is thermal conductivity computations performed using a rigorous calculation of three-phonon scattering events and accounting for the anharmonicity of interatomic forces. Three central assumptions that underlie published theories are evaluated and shown to compromise the accuracy of thermal conductivity predictions. It is shown that the use of classical phonon occupation statistics in place of the Bose-Einstein distribution causes the overprediction of specific heat and the underprediction of phonon relaxation time; for ZA phonons, the classical approximation can underpredict …
Electronic Structure Of Realistically Extended Atomistically Resolved Disordered Si:P Delta-Doped Layers, Sunhee Lee, Hoon Ryu, Lloyd Hollenberg, Michelle Simmons, Gerhard Klimeck
Electronic Structure Of Realistically Extended Atomistically Resolved Disordered Si:P Delta-Doped Layers, Sunhee Lee, Hoon Ryu, Lloyd Hollenberg, Michelle Simmons, Gerhard Klimeck
Birck and NCN Publications
The emergence of scanning tunneling microscope (STM) lithography and low temperature molecular beam epitaxy (MBE) opens the possibility of creating scalable donor based quantum computing architectures. In particular, atomically precise Si:P monolayer structures (delta-doped layers) serve as crucial contact regions and in-plane gates in single impurity devices. In this paper we study highly confined delta-doped layers to explain the disorder in the P dopant placements in realistically extended systems. The band structure is computed using the tight-binding formalism and charge-potential self-consistency. The exchange-correlation corrected impurity potential pulls down subbands below the silicon valley minima to create impurity bands. Our methodology …
Effects Of Carbon Nanotube-Tethered Nanosphere Density On Amperometric Biosensing: Simulation And Experiment, Jonathan Caussen, James Hengenius, Monique Wickner, Timothy Fisher, David Umulis, Marshall Porterfield
Effects Of Carbon Nanotube-Tethered Nanosphere Density On Amperometric Biosensing: Simulation And Experiment, Jonathan Caussen, James Hengenius, Monique Wickner, Timothy Fisher, David Umulis, Marshall Porterfield
Birck and NCN Publications
Nascent nanofabrication approaches are being applied to reduce electrode feature dimensions from the microscale to the nanoscale, creating biosensors that are capable of working more efficiently at the biomolecular level. The development of nanoscale biosensors has been driven largely by experimental empiricism to date. Consequently, the precise positioning of nanoscale electrode elements is typically neglected, and its impact on biosensor performance is subsequently overlooked. Herein, we present a bottom-up nanoelectrode array fabrication approach that utilizes low-density and horizontally oriented single-walled carbon nanotubes (SWCNTs) as a template for the growth and precise positioning of Pt nanospheres. We further develop a computational …
Spectral Phonon Conduction And Dominant Scattering Pathways In Graphene, Dhruv Singh, Jayathi Murthy, Timothy Fisher
Spectral Phonon Conduction And Dominant Scattering Pathways In Graphene, Dhruv Singh, Jayathi Murthy, Timothy Fisher
Birck and NCN Publications
In this paper, we examine the lattice thermal conductivity and dominant phonon scattering mechanisms of graphene. The interatomic interactions are modeled using the Tersoff interatomic potential and perturbation theory is applied to calculate the transition probabilities for three-phonon scattering. The matrix elements of the perturbing Hamiltonian are calculated using the anharmonic interatomic force constants obtained from the interatomic potential as well. The linearized Boltzmann transport equation is applied to compute the thermal conductivity of graphene for a wide range of parameters giving spectral and polarization-resolved information. The complete spectral detail of selection rules, important phonon scattering pathways, and phonon relaxation …
Enhanced Valence Force Field Model For The Lattice Properties Of Gallium Arsenide, Sebastian Steiger, Mehdi Salmani-Jelodar, Denis Areshkin, Abhijeet Paul, Tillmann Kubis, Michael Povolotskyi, Hong-Hyun Park, Gerhard Klimeck
Enhanced Valence Force Field Model For The Lattice Properties Of Gallium Arsenide, Sebastian Steiger, Mehdi Salmani-Jelodar, Denis Areshkin, Abhijeet Paul, Tillmann Kubis, Michael Povolotskyi, Hong-Hyun Park, Gerhard Klimeck
Birck and NCN Publications
An enhanced valence force field model for zinc-blende crystals is developed to provide a unified description of the isothermal static and dynamical lattice properties of gallium arsenide. The expression for the lattice energy includes a second-nearest-neighbor coplanar interaction term, the Coulomb interaction between partially charged ions, and anharmonicity corrections. General relations are derived between the microscopic force constants and the macroscopic elastic constants in zinc-blende crystals. Applying the model to gallium arsenide, parameter sets are presented that yield quantitative agreement with experimental results for the phonon dispersion, elastic constants, sound velocities, and Gru ̈neisen mode parameters.
Effects Of (Nh(4))(2)S Passivation On The Off-State Performance Of 3-Dimensional Ingaas Metal-Oxide-Semiconductor Field-Effect Transistors, J J Gu, A T. Neal, P D. Ye
Effects Of (Nh(4))(2)S Passivation On The Off-State Performance Of 3-Dimensional Ingaas Metal-Oxide-Semiconductor Field-Effect Transistors, J J Gu, A T. Neal, P D. Ye
Birck and NCN Publications
Planar and 3-dimensional (3D) buried-channel InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) have been experimentally demonstrated at deep-submicron gate lengths. The effect of (NH(4))(2)S passivation with different concentrations (20%, 10%, or 5%) on the off-state performance of these devices has been systematically studied. 10% (Na(4))(2)S treatment is found to yield the optimized high-k/InP harrier layer interface property, resulting in a minimum subthreshold swing (SS) lower than 100 mV/dec. Moreover, the 3D device structure greatly improves the off-state performance and facilitates enhancement-mode operation. A scaling metrics study has been carried out for 10% (NH(4))(2)S treated 3D devices with gate lengths down to 100 …
Graphene Formation On Step-Free 4h-Sic(0001), M. L. Bolen, R. Colby, E A. Stach, Michael A. Capano
Graphene Formation On Step-Free 4h-Sic(0001), M. L. Bolen, R. Colby, E A. Stach, Michael A. Capano
Birck and NCN Publications
Step-free SiC was thermally decomposed in vacuum to better understand graphene formation in the absence of step fronts. Atomic force microscopy revealed graphene nucleating at surface pits that preferentially form along SiC{1 $(1) over bar $ 00} planes. The density of these pits is 1 x 10(8)cm(-2), which is three orders of magnitude greater than the measured density of SiC threading dislocations. Additionally, Raman spectroscopy demonstrated that graphene on step-free regions have a redshifted 2D peak position and a smaller peak width than does graphene grown on stepped regions. This difference is attributed to film thickness, which is confirmed by …
The Significance Of In Situ Conditions In The Characterization Of Gasb Nanopatterned Surfaces Via Ion Beam Sputtering, Osman El-Atwani, Jean Paul, Alex Cimaroli, Anastassiya Suslova, Sami Ortoleva
The Significance Of In Situ Conditions In The Characterization Of Gasb Nanopatterned Surfaces Via Ion Beam Sputtering, Osman El-Atwani, Jean Paul, Alex Cimaroli, Anastassiya Suslova, Sami Ortoleva
Birck and NCN Publications
A systematic study is conducted in order to elucidate the underlying mechanism(s) for nanopatterning with low-energy irradiation of GaSb (100) under normal incidence. Ion energies between 50 and 1000 eV of Ar+ and ion fluences of up to 10(18) cm(-2) were employed. Characterization of the shallow (e.g., 1 to 6 nm) amorphous phase region induced by irradiation and the subsurface crystalline phase region is accomplished with low-energy ion scattering spectroscopy and x-ray photoelectron spectroscopy, respectively. In situ studies are conducted due to the strong chemical affinity for oxygen of GaSb. The studies conclude that at energies below 200 eV, the …
Laser Direct Write Of Silicon Nanowires, James Mitchell, Se Jun Park, C Adam Watson, Pornsak Srisungsitthisunti, Chookiat Tansarawiput, Minghao Qi, Eric Stach, Chen Yang, Xianfan Xu
Laser Direct Write Of Silicon Nanowires, James Mitchell, Se Jun Park, C Adam Watson, Pornsak Srisungsitthisunti, Chookiat Tansarawiput, Minghao Qi, Eric Stach, Chen Yang, Xianfan Xu
Birck and NCN Publications
Using laser direct writing in combination with chemical vapor deposition to produce nanometer scale electronics holds several advantages over current large scale photolithography methods. These include single step electrical interconnect deposition, mask-less patterning, and parallel processing. When taken together they make quick production of individualized electronic circuits possible. This work demonstrates the ability of combining laser direct write and chemical vapor deposition to produce silicon wires a few hundred nanometers wide. Optimized parameters will be discussed, with a particular emphasis paid to the laser-material interactions. The feasibility for electronic applications will be shown by examining the deposition formation on a …
Ridge Aperture Antenna Array As A High Efficiency Coupler For Photovoltaic Applications, Edward C. Kinzel, Pornsak Srisungsitthisunti, Xianfan Xu
Ridge Aperture Antenna Array As A High Efficiency Coupler For Photovoltaic Applications, Edward C. Kinzel, Pornsak Srisungsitthisunti, Xianfan Xu
Birck and NCN Publications
Weak absorption of light near the absorption band edge of a photovoltaic material is one limiting factor on the efficiency of photovoltaics. This is particularly true for silicon thin-film solar cells because of the short optical path lengths and limited options for texturing the front and back surfaces. Directing light laterally is one way to increase the optical path length and absorption. We investigate the use of a periodic array of apertures originated from bowtie aperture antennas to couple incident light into guided modes supported within a thin silicon film. We show the presence of the aperture array can increase …
Isostaticity Of Constraints In Amorphous Jammed Systems Of Soft Frictionless Platonic Solids, Kyle C. Smith, Timothy Fisher, Meheboob Alam
Isostaticity Of Constraints In Amorphous Jammed Systems Of Soft Frictionless Platonic Solids, Kyle C. Smith, Timothy Fisher, Meheboob Alam
Birck and NCN Publications
The average number of constraints per particle < C(total)> in mechanically stable amorphous systems of Platonic solids approaches the isostatic limit at the jamming point (< C(total)> -> 12), though average number of contacts are hypostatic. By introducing angular alignment metrics to classify the degree of constraint imposed by each contact, constraints are shown to arise as a direct result of local orientational order reflected in edge-face and face-face alignment angle distributions. With approximately one face-face contact per particle at jamming, chainlike face-face clusters form with finite extent-a signature of amorphous jammed systems.
Experimental And Atomistic Theoretical Study Of Degree Of Polarization From Multilayer Inas/Gaas Quantum Dot Stacks, Muhammad Usman, Tomoya Inoue, Yukihiro Harda, Gerhard Klimeck, Takashi Kita
Experimental And Atomistic Theoretical Study Of Degree Of Polarization From Multilayer Inas/Gaas Quantum Dot Stacks, Muhammad Usman, Tomoya Inoue, Yukihiro Harda, Gerhard Klimeck, Takashi Kita
Birck and NCN Publications
Recent experimental measurements, without any theoretical guidance, showed that isotropic po- larization response can be achieved by increasing the number of QD layers in a QD stack. Here we analyse the polarization response of multi-layer quantum dot stacks containing up to nine quan- tum dot layers by linearly polarized PL measurements and by carrying out a systematic set of multi-million atom simulations. The atomistic modeling and simulations allow us to include cor- rect symmetry properties in the calculations of the optical spectra: a factor critical to explain the experimental evidence. The values of the degree of polarization (DOP) calculated from …
Lifetime Enhanced Transport In Silicon Due To Spin And Valley Blockade, Gabriel Lansbergen, Rajib Rahman, J. Verdujin, Giuseppe Tettamanzi, Nadine Collaert, Serge Biesemans, Gerhard Klimeck, Lloyd Hollenberg, Sven Rogge
Lifetime Enhanced Transport In Silicon Due To Spin And Valley Blockade, Gabriel Lansbergen, Rajib Rahman, J. Verdujin, Giuseppe Tettamanzi, Nadine Collaert, Serge Biesemans, Gerhard Klimeck, Lloyd Hollenberg, Sven Rogge
Birck and NCN Publications
We report the observation of Lifetime Enhanced Transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the stability diagram due to a forbidden transition between an excited state and any of the lower energy states due perpendicular valley (and spin) configurations, offering an additional current path. By employing a detailed temperature dependence study in combination with a rate equation model, we estimate the lifetime of this particular state to exceed 48 ns. The two-electron spin-valley configurations of all relevant …
Quantitative Analysis Of The Disorder Broadening And The Intrinsic Gap For The V=5/2 Fractional Quantum Hall State, N. Samkharadze, J. D. Watson, G. Gardner, Michael J. Manfra, L. N. Pfeiffer, K. W. West, G. A. Csathy
Quantitative Analysis Of The Disorder Broadening And The Intrinsic Gap For The V=5/2 Fractional Quantum Hall State, N. Samkharadze, J. D. Watson, G. Gardner, Michael J. Manfra, L. N. Pfeiffer, K. W. West, G. A. Csathy
Birck and NCN Publications
We report a reliable method to estimate the disorder broadening parameter from the scaling of the gaps of the even and major odd denominator fractional quantum Hall states of the second Landau level. We apply this technique to several samples of vastly different densities and grown in different molecular beam epitaxy chambers. Excellent agreement is found between the estimated intrinsic and numerically obtained energy gaps for the v = 5/2 fractional quantum Hall state. Furthermore, we quantify the dependence of the intrinsic gap at v = 5/2 on Landau-level mixing.
Nonlinear Thermal Transport And Negative Differential Thermal Conductance In Graphene Nanoribbons, Jiuning Hu, Yan Wang, Ajit Vallabhaneni, Xiulin Ruan, Yong P. Chen
Nonlinear Thermal Transport And Negative Differential Thermal Conductance In Graphene Nanoribbons, Jiuning Hu, Yan Wang, Ajit Vallabhaneni, Xiulin Ruan, Yong P. Chen
Birck and NCN Publications
We employ classical molecular dynamics to study the nonlinear thermal transport in graphene nanoribbons (GNRs). For GNRs under large temperature biases beyond linear response regime, we have observed the onset of negative differential thermal conductance (NDTC). NDTC is tunable by varying the manner of applying the temperature biases. NDTC is reduced and eventually disappears when the length of the GNR increases. We have also observed NDTC in triangular GNRs, where NDTC exists only when the heat current is from the narrower to the wider end. These effects may be useful in nanoscale thermal managements and thermal signal processing utilizing GNRs. …
Strain Engineering Via Amorphization And Recrystallization In Si/Ge Heterostructures, Yumi Park, Winnie Tan, Alejandro Strachan
Strain Engineering Via Amorphization And Recrystallization In Si/Ge Heterostructures, Yumi Park, Winnie Tan, Alejandro Strachan
Birck and NCN Publications
We use molecular dynamics with the reactive potential ReaxFF to study strain relaxation during the amorphization and recrystallization of silicon-germanium epitaxial nanolaminates. Starting with a coherent heterostructure with (010) Si/Ge interfaces and 3D periodic boundary conditions, we use local heating and quenching to amorphize half of the simulation cell with crystal-amorphous interfaces normal to [001]. We find strain relaxation along [001] as the crystalline Ge section expands into the amorphous material and crystalline Si contracts from it. The amount of strain relaxation correlates with the atomic transport from the amorphized Ge to Si section and increases as the periodic width …