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Articles 331 - 360 of 541

Full-Text Articles in Nanoscience and Nanotechnology

Atomistic Study Of Electronic Structure Of Pbse Nanowires, Abhijeet Paul, Gerhard Klimeck Mar 2011

Atomistic Study Of Electronic Structure Of Pbse Nanowires, Abhijeet Paul, Gerhard Klimeck

Birck and NCN Publications

Lead Selenide (PbSe) is an attractive ‘IV-VI’ semiconductor material to design optical sensors, lasers and thermoelectric devices. Improved fabrication of PbSe nanowires (NWs) enables the utilization of low dimensional quantum effects. The effect of cross-section size (W) and channel orientation on the bandstructure of PbSe NWs is studied using an 18 band sp3d5 tight-binding theory. The bandgap increases almost with the inverse of the W for all the orientations indicating a weak symmetry dependence. [111] and [110] NWs show higher ballistic conductance for the conduction and valence band compared to [100] NWs due to the significant splitting of the projected …

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Atomistic Study Of Electronic Structure Of Pbse Nanowires, Abhijeet Paul, Gerhard Klimeck Mar 2011

Atomistic Study Of Electronic Structure Of Pbse Nanowires, Abhijeet Paul, Gerhard Klimeck

Birck and NCN Publications

Lead Selenide (PbSe) is an attractive ‘IV-VI’ semiconductor material to design optical sensors, lasers and thermoelectric devices. Improved fabrication of PbSe nanowires (NWs) enables the utilization of low dimensional quantum effects. The effect of cross-section size (W) and channel orientation on the bandstructure of PbSe NWs is studied using an 18 band sp3d5 tight-binding theory. The bandgap increases almost with the inverse of the W for all the orientations indicating a weak symmetry dependence. [111] and [110] NWs show higher ballistic conductance for the conduction and valence band compared to [100] NWs due to the significant splitting of the projected …

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Polarity Effects In The X-Ray Photoemission Of Zno And Other Wurtzite Semiconductors, M. W. Allen, Dmitry Zemlyanov, G.I.N. Waterhouse, J. B. Metson, T. D. Veal, C. F. Mcconville, S. M. Durbin Mar 2011

Polarity Effects In The X-Ray Photoemission Of Zno And Other Wurtzite Semiconductors, M. W. Allen, Dmitry Zemlyanov, G.I.N. Waterhouse, J. B. Metson, T. D. Veal, C. F. Mcconville, S. M. Durbin

Birck and NCN Publications

Significant polarity-related effects were observed in the near-surface atomic composition and valence band electronic structure of ZnO single crystals, investigated by x-ray photoemission spectroscopy using both Al K(alpha) (1486.6 eV) and synchrotron radiation (150 to 1486 eV). In particular, photoemission from the lowest binding energy valence band states was found to be significantly more intense on the Zn-polar face compared to the O-polar face. This is a consistent effect that can be used as a simple, nondestructive indicator of crystallographic polarity in ZnO and other wurtzite semiconductors. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3562308]

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Coherent Electron Transport By Adiabatic Passage In An Imperfect Donor Chain, Rajib Rahman, Richard P. Muller, James E. Levy, Malcolm S. Carroll, Gerhard Klimeck, Andrew D. Greentree, Lloyd C. L. Hollenberg Mar 2011

Coherent Electron Transport By Adiabatic Passage In An Imperfect Donor Chain, Rajib Rahman, Richard P. Muller, James E. Levy, Malcolm S. Carroll, Gerhard Klimeck, Andrew D. Greentree, Lloyd C. L. Hollenberg

Birck and NCN Publications

Coherent tunneling adiabatic passage 􏰀CTAP􏰁 has been proposed as a long-range physical quantum bits 􏰀qubit􏰁 transport mechanism in solid-state quantum computing architectures. Although the mechanism can be implemented in either a chain of quantum dots or donors, a one-dimensional chain of donors in Si is of particular interest due to the natural confining potential of donors that can, in principle, help reduce the gate densities in solid-state quantum computing architectures. Using detailed atomistic modeling, we investigate CTAP in a more realistic triple donor system in the presence of inevitable fabrication imperfections. In particular, we investigate how an adiabatic pathway for …

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Effects Of Gate-Last And Gate-First Process On Deep Submicron Inversion-Mode Ingaas N-Channel Metal-Oxide-Semiconductor Field Effect Transistors, J. J. Gu, Y. Q. Wu, Peide D. Ye Mar 2011

Effects Of Gate-Last And Gate-First Process On Deep Submicron Inversion-Mode Ingaas N-Channel Metal-Oxide-Semiconductor Field Effect Transistors, J. J. Gu, Y. Q. Wu, Peide D. Ye

Birck and NCN Publications

Recently, encouraging progress has been made on surface-channel inversion-mode In-rich InGaAs NMOSFETs with superior drive current, high transconductance and minuscule gate leakage, using atomic layer deposited (ALD) high-k dielectrics. Although gate-last process is favorable for high-k/III-V integration, high-speed logic devices require a self-aligned gate-first process for reducing the parasitic resistance and overlap capacitance. On the other hand, a gate-first process usually requires higher thermal budget and may degrade the III-V device performance. In this paper, we systematically investigate the thermal budget of gate-last and gate-first process for deep-submicron InGaAs MOSFETs. We conclude that the thermal instability of (NH(4))(2)S as the …

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Chemical Response Of Lithiated Graphite With Deuterium Irradiation, C. N. Taylor, B. Heim, Jean Paul Allain Mar 2011

Chemical Response Of Lithiated Graphite With Deuterium Irradiation, C. N. Taylor, B. Heim, Jean Paul Allain

Birck and NCN Publications

Lithium wall conditioning has been found to enhance plasma performance for graphite walled fusion devices such as TFTR, CDX-U, T-11M, TJ-II and NSTX. Among observed plasma enhancements is a reduction in edge density and reduced deuterium recycling. The mechanism by which lithiated graphite retains deuterium is largely unknown. Under controlled laboratory conditions, X-ray photoelectron spectroscopy (XPS) is used to observe the chemical changes that occur on ATJ graphite after lithium deposition. The chemical state of lithiated graphite is found to change upon deuterium irradiation indicating the formation Li-O-D, manifest at 532.9 +/- 0.6 eV. Lithium-deuterium interactions are also manifest in …

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Accurate Six-Band Nearest-Neighbor Tight-Binding Model For The Π-Bands Of Bulk Graphene And Graphene Nanoribbons, Timothy B. Boykin, Mathieu Luisier, Gerhard Klimeck, Xueping Jiang, Neerav Kharche, Yu Zhou, Saroj K. Nayak Mar 2011

Accurate Six-Band Nearest-Neighbor Tight-Binding Model For The Π-Bands Of Bulk Graphene And Graphene Nanoribbons, Timothy B. Boykin, Mathieu Luisier, Gerhard Klimeck, Xueping Jiang, Neerav Kharche, Yu Zhou, Saroj K. Nayak

Birck and NCN Publications

Accurate modeling of the ␣-bands of armchair graphene nanoribbons (AGNRs) requires correctly reproducing asymmetries in the bulk graphene bands as well as providing a realistic model for hydrogen passivation of the edge atoms. The commonly used single-pz orbital approach fails on both these counts. To overcome these failures we introduce a nearest-neighbor, three orbital per atom p/d tight-binding model for graphene. The parameters of the model are fit to first-principles density-functional theory (DFT) – based calculations as well as to those based on the many-body Green’s function and screened-exchange (GW) formalism, giving excellent agreement with the ab initio AGNR bands. …

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Surface-Enhanced Raman Imaging Of Intracellular Bioreduction Of Chromate In Shewanella Oneidensis, Sandeep P. Ravindranath, Kristene Henne, Dorothea Thompson, Joseph Irudayaraj Feb 2011

Surface-Enhanced Raman Imaging Of Intracellular Bioreduction Of Chromate In Shewanella Oneidensis, Sandeep P. Ravindranath, Kristene Henne, Dorothea Thompson, Joseph Irudayaraj

Birck and NCN Publications

This proposed research aims to use novel nanoparticle sensors and spectroscopic tools constituting surface-enhanced Raman spectroscopy (SERS) and Fluorescence Lifetime imaging (FLIM) to study intracellular chemical activities within single bioremediating microorganism. The grand challenge is to develop a mechanistic understanding of chromate reduction and localization by the remediating bacterium Shewanella oneidensis MR-1 by chemical and lifetime imaging. MR-1 has attracted wide interest from the research community because of its potential in reducing multiple chemical and metallic electron acceptors. While several biomolecular approaches to decode microbial reduction mechanisms exist, there is a considerable gap in the availability of sensor platforms to …

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The Composite Materials Manufacturaing Hub - Crowd Sourcing As The Norm, R. Byron Pipes, Gerhard Klimeck, Mark R. Pipes Feb 2011

The Composite Materials Manufacturaing Hub - Crowd Sourcing As The Norm, R. Byron Pipes, Gerhard Klimeck, Mark R. Pipes

Birck and NCN Publications

The Composites Manufacturing HUB puts compo- sites manufacturing simulations in the hands of those who need them to invent new and innovative ways to capture the extraordinary benefits of these high perfor- mance products at an acceptable manufactured cost. The HUB provides the user simple browser access to power- ful tools that simulate the actual steps and outcome con- ditions of a complex manufacturing process without the need to download and maintain software in the conven- tional manner. Learning use of the manufacturing simu- lation tools will also be accomplished on the HUB in or- der to allow for continuous …

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Interface Trap Density Metrology From Sub-Threshold Transport In Highly Scaled Undoped Si N-Finfets, Abhijeet Paul, Giuseppe C. Tettamanz, Sunhee Lee, Saumitra R. Mehrotra, Nadine Collaert, Serge Biesemans, Sven Rogge, Gerhard Klimeck Feb 2011

Interface Trap Density Metrology From Sub-Threshold Transport In Highly Scaled Undoped Si N-Finfets, Abhijeet Paul, Giuseppe C. Tettamanz, Sunhee Lee, Saumitra R. Mehrotra, Nadine Collaert, Serge Biesemans, Sven Rogge, Gerhard Klimeck

Birck and NCN Publications

Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical Tight- Binding (TB) calculations, this technique can be used to understand the evolution of source-to- channel barrier height (Eb) and of active channel area (S) with gate bias (Vgs). The quantitative difference between experimental and theoretical values that we observe can be attributed to the interface traps present in these FinFETs. Therefore, based on the difference between measured and calculated values of (i) S and (ii) |∂Eb/∂Vgs| (channel to gate coupling), two new methods of …

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Molecular Dynamics Characterization Of The Contact Between Clean Metallic Surfaces With Nanoscale Asperities, Hojin Kim, Alejandro Strachan Jan 2011

Molecular Dynamics Characterization Of The Contact Between Clean Metallic Surfaces With Nanoscale Asperities, Hojin Kim, Alejandro Strachan

Birck and NCN Publications

We use molecular dynamics (MD) simulations to characterize the tensile strength of contacts formed between various clean platinum surfaces with nanoscale asperities. Both commensurate contacts between (001) and (111) surfaces and incommensurate (001) ones are considered over a wide range of asperity sizes. In cyclic closing and opening, fresh asperities that form contacts for the first time show significant plastic deformation; this leads to a reduction in the effective contact area during the first few cycles, after which steady state is achieved both in terms of contact size and the pull-out force necessary to open the contacts. As is the …

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Lattice Thermal Conductivity Reduction In Bi2te3 Quantum Wires With Smooth And Rough Surfaces: A Molecular Dynamics Study, Bo Qiu, Lin Sun, Xiulin Ruan Jan 2011

Lattice Thermal Conductivity Reduction In Bi2te3 Quantum Wires With Smooth And Rough Surfaces: A Molecular Dynamics Study, Bo Qiu, Lin Sun, Xiulin Ruan

Birck and NCN Publications

Using molecular dynamics simulations, we have predicted the thermal conductivity of Bi2Te3 nanowires with diameters ranging from 3 to 30 nm with both smooth and rough surfaces. It is found that when the nanowire diameter decreases to the molecular scale (below 10 nm, or the so-called "quantum wire"), the thermal conductivity shows significant reduction as compared to bulk value. On the other hand, the thermal conductivity for the 30-nm-diam nanowire only shows less than 20% reduction, in agreement with recent experimental data. Also, the thermal conductivity of nanowires shows a weaker temperature dependence than the typical T-1 trend, consistent with …

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Phonon-Limited And Effective Low-Field Mobility In N- And P-Type [100]-, [110]-, And [111]-Oriented Si Nanowire Transistors, Mathieu Luisier Jan 2011

Phonon-Limited And Effective Low-Field Mobility In N- And P-Type [100]-, [110]-, And [111]-Oriented Si Nanowire Transistors, Mathieu Luisier

Birck and NCN Publications

Ultrascaled n- and p-type Si nanowire field-effect transistors (NW FETs) with [100], [110], and [111] as channel orientations are simulated in the presence of electron-phonon scattering using an atomistic quantum transport solver based on the sp(3)d(5)s* tight-binding model for electrons and holes, a modified Keating model for phonons, and the nonequilibrium Green's function formalism. The channel resistances of devices with different gate lengths and carrier concentrations are computed at room temperature and used to extract phonon-limited, ballistic, and effective low-field mobilities. It is found that a [110] channel represents the best choice for high n- and p-type NW FET performances. …

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Effect Of Strain On Stripe Phases In The Quantum Hall Regime, Sunanda P. Koduvayur, Yuli Lyanda-Geller, Sergei Khlebnikov, Gabor Csathy, Michael J. Manfra, Loren N. Pfeiffer, Kenneth W. West, Leonid P. Rokhinson Jan 2011

Effect Of Strain On Stripe Phases In The Quantum Hall Regime, Sunanda P. Koduvayur, Yuli Lyanda-Geller, Sergei Khlebnikov, Gabor Csathy, Michael J. Manfra, Loren N. Pfeiffer, Kenneth W. West, Leonid P. Rokhinson

Birck and NCN Publications

Preferential orientation of the stripe phases in the quantum Hall (QH) regime has remained a puzzle since its discovery. We show experimentally and theoretically that the direction of high and low resistance of the two-dimensional (2D) hole gas in the QH regime can be controlled by an external strain. Depending on the sign of the in-plane shear strain, the Hartree-Fock energy of holes or electrons is minimized when the charge density wave (CDW) is oriented along the [110] or [1 (1) over bar0] directions. We suggest that shear strains due to internal electric fields in the growth direction are responsible …

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Influence Of Cross-Section Geometry And Wire Orientation On The Phonon Shifts In Ultra-Scaled Si Nanowires, Abhijeet Paul, Mathieu Luisier, Gerhard Klimeck Jan 2011

Influence Of Cross-Section Geometry And Wire Orientation On The Phonon Shifts In Ultra-Scaled Si Nanowires, Abhijeet Paul, Mathieu Luisier, Gerhard Klimeck

Birck and NCN Publications

Engineering of the cross-section shape and size of ultra-scaled Si nanowires (SiNWs) provides an attractive way for tuning their structural properties. The acoustic and optical phonon shifts of the free-standing circular, hexagonal, square and triangular SiNWs are calculated using a Modified Valence Force Field (MVFF) model. The acoustic phonon blue shift (acoustic hardening) and the optical phonon red shift (optical softening) show a strong dependence on the cross-section shape and size of the SiNWs. The triangular SiNWs have the least structural symmetry as revealed by the splitting of the degenerate flexural phonon modes and The show the minimum acoustic hardening …

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Effects Of Interface Roughness Scattering On Radio Frequency Performance Of Silicon Nanowire Transistors, Sunggeun Kim, Mathieu Luisier, Timothy B. Boykin, Gerhard Klimeck Jan 2011

Effects Of Interface Roughness Scattering On Radio Frequency Performance Of Silicon Nanowire Transistors, Sunggeun Kim, Mathieu Luisier, Timothy B. Boykin, Gerhard Klimeck

Birck and NCN Publications

The effects of an atomistic interface roughness in n-type silicon nanowire transistors (SiNWT) on the radio frequency performance are analyzed. Interface roughness scattering (IRS) is statistically investigated through a three dimensional full–band quantum transport simulation based on the sp3d5s∗ tight–binding model. As the diameter of the SiNWT is scaled down below 3 nm, IRS causes a significant reduction of the cut-off frequency. The fluctuations of the conduction band edge due to the rough surface lead to a reflection of electrons through mode-mismatch. This effect reduces the velocity of electrons and hence the transconductance considerably causing a cut-off frequency reduction.

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Effects Of Interface Disorder On Valley Splitting In Sige/Si/Sige Quantum Wells, Zhengping Jiang, Neerav Kharche, Timothy Boykin, Gerhard Klimeck Jan 2011

Effects Of Interface Disorder On Valley Splitting In Sige/Si/Sige Quantum Wells, Zhengping Jiang, Neerav Kharche, Timothy Boykin, Gerhard Klimeck

Birck and NCN Publications

A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface disorder on the VS in an atomistic tight binding approach based on statistical sampling. VS is analyzed as a function of electric field, QW thickness, and simulation domain size. Strong electric fields push the electron wavefunctions into the SiGe buffer and introduce significant VS fluctuations from device to device. A Gedankenexperiment with ordered alloys sheds light on the importance of different bonding configurations on VS. We …

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Shape And Orientation Effects On The Ballistic Phonon Thermal Properties Of Ultra-Scaled Si Nanowires, Abhijeet Paul, Mathieu Luisier, Gerhard Klimeck Jan 2011

Shape And Orientation Effects On The Ballistic Phonon Thermal Properties Of Ultra-Scaled Si Nanowires, Abhijeet Paul, Mathieu Luisier, Gerhard Klimeck

Birck and NCN Publications

The effect of geometrical confinement, atomic position and orientation of Silicon nanowires (SiNWs) on their thermal properties are investigated using the phonon dispersion obtained using a Modified Valence Force Field (MVFF) model. The spe- cific heat (Cv) and the ballistic thermal conductance (κbal) shows anisotropic variation l with changing cross-section shape and size of the SiNWs. The Cv increases with de- creasing cross-section size for all the wires. The triangular wires show the largest Cv due to their highest surface-to-volume ratio. The square wires with [110] orientation show the maximum κbal since they have the highest number of conducting phonon …

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Universality Of Non-Ohmic Shunt Leakage In Thin-Film Solar Cells, Sourabh Dongaonkar, J. D. Servaites, G. M. Ford, S. Loser, R. M. Gelfand, H. Mohseni, Hugh Hillhouse, R. Agrawal, M. A. Ratner, T. J. Marks, Mark S. Lundstrom, Muhammad A. Alam Dec 2010

Universality Of Non-Ohmic Shunt Leakage In Thin-Film Solar Cells, Sourabh Dongaonkar, J. D. Servaites, G. M. Ford, S. Loser, R. M. Gelfand, H. Mohseni, Hugh Hillhouse, R. Agrawal, M. A. Ratner, T. J. Marks, Mark S. Lundstrom, Muhammad A. Alam

Other Nanotechnology Publications

We compare the dark current-voltage (IV) characteristics of three different thin-film solar cell types: hydrogenated amorphous silicon (a-Si:H) p-i-n cells, organic bulk heterojunction (BHJ) cells, and Cu(In, Ga)Se-2 (CIGS) cells. All three device types exhibit a significant shunt leakage current at low forward bias (V < similar to 0.4) and reverse bias, which cannot be explained by the classical solar cell diode model. This parasitic shunt current exhibits non-Ohmic behavior, as opposed to the traditional constant shunt resistance model for photovoltaics. We show here that this shunt leakage (I-sh), across all three solar cell types considered, is characterized by the following common phenomenological features: (a) voltage symmetry about V = 0, (b) nonlinear (power law) voltage dependence, and (c) extremely weak temperature dependence. Based on this analysis, we provide a simple method of subtracting this shunt current component from the measured data and discuss its implications on dark IV parameter extraction. We propose a space charge limited (SCL) current model for capturing all these features of the shunt leakage in a consistent framework and discuss possible physical origin of the parasitic paths responsible for this shunt current mechanism. (C) 2010 American Institute of Physics. [doi:10.1063/1.3518509]

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Uncertainty Propagation In A Multiscale Model Of Nanocrystalline Plasticity, Marisol Koslowski, Alejandro Strachan Dec 2010

Uncertainty Propagation In A Multiscale Model Of Nanocrystalline Plasticity, Marisol Koslowski, Alejandro Strachan

PRISM: NNSA Center for Prediction of Reliability, Integrity and Survivability of Microsystems

We characterize how uncertainties propagate across spatial and temporal scales in a physicsbased model of nanocrystalline plasticity of fcc metals. Our model combines molecular dynamics (MD) simulations to characterize atomic level processes that govern dislocation basedplastic deformation with a phase field approach to dislocation dynamics (PFDD) that describes how an ensemble of dislocations evolve and interact to determine the mechanical response of the material. We apply this approach to a nanocrystalline Ni specimen of interest in micro-electromechanical (MEMS) switches. Our approach enables us to quantify how internal stresses that result from the fabrication process affect the properties of dislocations (using …

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Small-Scale Solutions To Grand Challenges In Thermal Management, Suresh V. Garimella Nov 2010

Small-Scale Solutions To Grand Challenges In Thermal Management, Suresh V. Garimella

Birck and NCN Publications

Research needs in the field of thermal management of microelectronics and microsystems are identified, followed by a brief discussion of recent advances in solution approaches. These include novel solutions that rely on two-phase flow at the microscale, micropumps, droplet actuation on structured surfaces, passive transport in wick structures, ion-driven and piezoelectrically driven airflow, nanostructured thermal materials, and novel diagnostic tools.

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Coherent Electron Transport By Adiabatic Passage In An Imperfect Donor Chain, Rajib Rahman, Richard P. Muller, James E. Levy, Malcolm S. Carroll, Gerhard Klimeck, Andrew D. Greentree, Lloyd C. L. Hollenberg Sep 2010

Coherent Electron Transport By Adiabatic Passage In An Imperfect Donor Chain, Rajib Rahman, Richard P. Muller, James E. Levy, Malcolm S. Carroll, Gerhard Klimeck, Andrew D. Greentree, Lloyd C. L. Hollenberg

Birck and NCN Publications

Coherent Tunneling Adiabatic Passage (CTAP) has been proposed as a long-range physical qubit transport mechanism in solid-state quantum computing architectures. Although the mechanism can be implemented in either a chain of quantum dots or donors, a 1D chain of donors in Si is of particular interest due to the natural confining potential of donors that can in principle help reduce the gate densities in solid-state quantum computing architectures. Using detailed atomistic modeling, we investigate CTAP in a more realistic triple donor system in the presence of inevitable fabrication imperfections. In particular, we investigate how an adiabatic pathway for CTAP is …

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Uncertainty Quantification Study For A Comprehensive Electrostatic Mems Switch Model, Michael G. Snow, Anil K. Bajaj Sep 2010

Uncertainty Quantification Study For A Comprehensive Electrostatic Mems Switch Model, Michael G. Snow, Anil K. Bajaj

PRISM: NNSA Center for Prediction of Reliability, Integrity and Survivability of Microsystems

This work presents an uncertainty analysis of a comprehensive model for an electrostatic MEMS switch. The goal is to elucidate the effects of parameter variations on certain performance characteristics. A sufficiently detailed model of an electrostatically actuated beam is developed. This model accounts for various physical effects, including the electrostatic fringing field, finite length of electrodes, squeeze film damping, and contact between the beam and the dielectric layer. The performance characteristics of immediate interest are the static and dynamic pull-in voltages for switch. Using Latin Hypercube and other sampling methods, the model is evaluated to find these performances characteristics when …

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Comprehensive Reduced-Order Models Of Electrostatically Actuated Mems Switches And Their Dynamics Including Impact And Bounce, Michael G. Snow, Anil K. Bajaj Aug 2010

Comprehensive Reduced-Order Models Of Electrostatically Actuated Mems Switches And Their Dynamics Including Impact And Bounce, Michael G. Snow, Anil K. Bajaj

PRISM: NNSA Center for Prediction of Reliability, Integrity and Survivability of Microsystems

As MEMS technology develops it is becoming better understood that MEMS designers must account for the large uncertainties characteristic of the relevant manufacturing processes. Uncertainty quantification tasks the designer with evaluating many different possible outcomes from the manufacturing process which creates a demand for models that are accurate and comprehensive, yet fast to evaluate. This work presents a comprehensive reduced-order model of electrostatically actuated switches incorporating a range of effects that are typically included only in FE modeling codes. Specifically, the model accounts for variable electrode geometry, stretching of centerline or large displacement effects, fringing field, squeeze film and rarefied …

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Simulation Of Sub-Micron Thermal Transport In A Mosfet Using A, James Loy, Druv Singh, Jayathi Y. Murthy Aug 2010

Simulation Of Sub-Micron Thermal Transport In A Mosfet Using A, James Loy, Druv Singh, Jayathi Y. Murthy

PRISM: NNSA Center for Prediction of Reliability, Integrity and Survivability of Microsystems

Self-heating has emerged as a critical bottleneck to scaling in modern transistors. In simulating heat conduction in these devices, it is important to account for the granularity of phonon transport since electron-phonon scattering occurs preferentially to select phonon groups. However, a complete accounting for phonon dispersion, polarization and scattering is very expensive if the Boltzmann transport equation (BTE) is used. Moreover, difficulties with convergence are encountered when the phonon Knudsen number becomes small. In this paper we simulate a two-dimensional bulk MOSFET hotspot problem using a partially-implicit hybrid BTE-Fourier solver which is significantly less expensive than a full BTE solution, …

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Eight-Channel Reconfigurable Microring Filters With Tunable Frequency, Extinction Ratio And Bandwidth, Hao Shen, Maroof H. Khan, Li Fan, Lin Zhao, Yi Xuan, Jing Ouyang, Leo T. Varghese, Minghao Qi Aug 2010

Eight-Channel Reconfigurable Microring Filters With Tunable Frequency, Extinction Ratio And Bandwidth, Hao Shen, Maroof H. Khan, Li Fan, Lin Zhao, Yi Xuan, Jing Ouyang, Leo T. Varghese, Minghao Qi

Birck and NCN Publications

We demonstrate an eight-channel reconfigurable optical filter on a silicon chip. It consists of cascaded microring resonators and integrated compact heaters. With an embedded Mach-Zehnder (MZ) arm coupling to a microring resonator, the important parameters of a filter such as center frequency, extinction ratio and bandwidth can be controlled simultaneously for purposes of filtering, routing and spectral shaping. Thus our device could potentially be useful in dense wavelength division multiplexing (DWDM) and radio frequency arbitrary waveform generation (RFAWG). Multichannel filter response was successfully tuned to match the International Telecommunication Unit (ITU) grid with 50, 100 and 200GHz in channel spacing. …

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Acoustic Phonon Scattering In Bi2te3/Sb2te3 Superlattices, Yaguo Wang, Carl Liebig, Xianfan Xu, Rama Venkatasubramanian Aug 2010

Acoustic Phonon Scattering In Bi2te3/Sb2te3 Superlattices, Yaguo Wang, Carl Liebig, Xianfan Xu, Rama Venkatasubramanian

Birck and NCN Publications

Ultrafast time-resolved measurements were conducted to investigate long-wavelength acoustic phonon scattering and velocity reduction in Bi2Te3/Sb2Te3 superlattices. We show that both these phenomena suppress heat transfer process, with the phonon scattering contributing more in differentiating the lattice thermal conductivities among films with different periods. Measurements of reduction in the acoustic phonon amplitudes support the decrease in the thermal conductivity for certain superlattice periods, which is not predicted by acoustic mismatch theory. This study is a direct measurement of coherent acoustic phonons in superlattices which is of significant interest to thermoelectrics.

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Iii-Nitride Nanopyramid Light Emitting Diodes Grown By Organometallic Vapor Phase Epitaxy, Isaac Wildeson, Robert Colby, David Ewoldt, Zhiwen Liang, Dmitri Zakharov, Nestor J. Zaluzec, R. Edwin García, E A. Stach, Timothy D. Sands Aug 2010

Iii-Nitride Nanopyramid Light Emitting Diodes Grown By Organometallic Vapor Phase Epitaxy, Isaac Wildeson, Robert Colby, David Ewoldt, Zhiwen Liang, Dmitri Zakharov, Nestor J. Zaluzec, R. Edwin García, E A. Stach, Timothy D. Sands

Birck and NCN Publications

Nanopyramid light emitting diodes (LEDs) have been synthesized by selective area organometallic vapor phase epitaxy. Self-organized porous anodic alumina is used to pattern the dielectric growth e templates via reactive ion etching, eliminating the need for lithographic processes. (In,Ga)N quantum well growth occurs primarily on the six {1 (1) over bar 01} semipolar facets of each of the nanopyramids, while coherent (In,Ga)N quantum dots with heights of up to similar to 20 nm are incorporated at the apex by controlling growth conditions. Transmission electron microscopy (TEM) indicates that the (In,Ga)N active regions of the nanopyramid heterostructures are completely dislocation-free. Temperature-dependent …

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Metric Signature Transitions In Optical Metamaterials, Igor Smolyaninov, Evgenii Narimanov Aug 2010

Metric Signature Transitions In Optical Metamaterials, Igor Smolyaninov, Evgenii Narimanov

Birck and NCN Publications

We demonstrate that the extraordinary waves in indefinite metamaterials experience an (- - + +) effective metric signature. During a metric signature change transition in such a metamaterial, a Minkowski space-time is created together with a large number of particles populating the space-time. Such metamaterial models provide a tabletop realization of metric signature change events suggested to occur in Bose-Einstein condensates and quantum gravity theories.

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Microcantilever Dynamics In Liquid Environment Dynamic Atomic Force Microscopy When Using Higher-Order Cantilever Eigenmodes, Daniel Kiracofe, Arvind Raman Aug 2010

Microcantilever Dynamics In Liquid Environment Dynamic Atomic Force Microscopy When Using Higher-Order Cantilever Eigenmodes, Daniel Kiracofe, Arvind Raman

Birck and NCN Publications

Dynamic atomic force microscopy is currently evolving from a single to a multifrequency instrument for nanoscale imaging often employing higher-order microcantilever eigenmodes for improved resolution and force spectroscopy. In this work the authors study the fundamentals of cantilever dynamics and energy dissipation when soft cantilevers are driven at their second flexural eigenmode and interact with samples in liquid environments. Contrary to the conventional first eigenmode operation, second eigenmode operation in liquids is often dominated by a subharmonic response (e.g., one tap every four drive cycles) and there is an energy transfer to the first eigenmode creating a new channel of …

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