Open Access. Powered by Scholars. Published by Universities.®

Nanoscience and Nanotechnology Commons™

Open Access. Powered by Scholars. Published by Universities.®

Purdue University

Discipline
Keyword
Publication Year
Publication
Publication Type
File Type

Articles 181 - 210 of 541

Full-Text Articles in Nanoscience and Nanotechnology

Shape Memory Metamaterials With Tunable Thermo-Mechanical Response Via Hetero-Epitaxial Integration: A Molecular Dynamics Study, Karthik Guda Vishnu, Alejandro Strachan Mar 2013

Shape Memory Metamaterials With Tunable Thermo-Mechanical Response Via Hetero-Epitaxial Integration: A Molecular Dynamics Study, Karthik Guda Vishnu, Alejandro Strachan

Birck and NCN Publications

We show that nanoscale epitaxial superlattices (SLs) can be used to engineer the energy landscape that governs the martensitic transformation in shape memory alloys and tune their thermo-mechanical response. We demonstrate the approach using large-scale molecular dynamics simulations of a SL material consisting of alternate layers of a shape memory Ni-rich NiAl alloy and NiAl B2 alloy. The non-martensitic NiAl alloy was chosen to reduce the energy barrier that separates the martensite and austenite phases of the SL and its incorporation leads to a reduction in the thermal hysteresis of the transition. This is a desirable feature in applications involving …

Go to article

Effects Of Forming Gas Anneal On Ultrathin Ingaas Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors, Mengwei Si, Jiangjiang Gu, Xinwei Wang, Jiayi Shao, Xuefei Li, Michael J. Manfra, Roy G. Gordon, Peide D. Ye Mar 2013

Effects Of Forming Gas Anneal On Ultrathin Ingaas Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors, Mengwei Si, Jiangjiang Gu, Xinwei Wang, Jiayi Shao, Xuefei Li, Michael J. Manfra, Roy G. Gordon, Peide D. Ye

Birck and NCN Publications

InGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowire thickness have been experimentally demonstrated at sub-80 nm channel length. The effects of forming gas anneal (FGA) on the performance of these devices have been systematically studied. The 30min 400 degrees C FGA (4% H-2/96% N-2) is found to improve the quality of the Al2O3/InGaAs interface, resulting in a subthreshold slope reduction over 20mV/dec (from 117mV/dec in average to 93mV/dec). Moreover, the improvement of interface quality also has positive impact on the on-state device performance. A scaling metrics study has been carried out for FGA treated devices with channel lengths …

Go to article

Laser Direct Writing Of Silicon Field Effect Transistor Sensors, Woongsik Nam, James I. Mitchell, Chookiat Tansarawiput, Minghao Qi, Xianfan Xu Mar 2013

Laser Direct Writing Of Silicon Field Effect Transistor Sensors, Woongsik Nam, James I. Mitchell, Chookiat Tansarawiput, Minghao Qi, Xianfan Xu

Birck and NCN Publications

We demonstrate a single step technique to fabricate silicon wires for field effect transistor sensors. Boron-doped silicon wires are fabricated using laser direct writing in combination with chemical vapor deposition, which has the advantages of precise control of position, orientation, and length, and in situ doping. The silicon wires can be fabricated to have very rough surfaces by controlling laser operation parameters, and thus, have large surface areas, enabling high sensitivity for sensing. Highly sensitive pH sensing is demonstrated. We expect our method can be expanded to the fabrication of various sensing devices beyond chemical sensors. (C) 2013 American Institute …

Go to article

Deuterium Uptake In Magnetic-Fusion Devices With Lithium-Conditioned Carbon Walls, P. S. Krstic, Jean Paul Allain, C. N. Taylor, J. Dadras, S. Maeda, K. Morokuma, J. Jakowski, A. Allouche, C. H. Skinner Mar 2013

Deuterium Uptake In Magnetic-Fusion Devices With Lithium-Conditioned Carbon Walls, P. S. Krstic, Jean Paul Allain, C. N. Taylor, J. Dadras, S. Maeda, K. Morokuma, J. Jakowski, A. Allouche, C. H. Skinner

Birck and NCN Publications

Lithium wall conditioning has lowered hydrogenic recycling and dramatically improved plasma performance in many magnetic-fusion devices. In this Letter, we report quantum-classical atomistic simulations and laboratory experiments that elucidate the roles of lithium and oxygen in the uptake of hydrogen in amorphous carbon. Surprisingly, we show that lithium creates a high oxygen concentration on a carbon surface when bombarded by deuterium. Furthermore, surface oxygen, rather than lithium, plays the key role in trapping hydrogen. DOI: 10.1103/PhysRevLett.110.105001

Go to article

Thermal Transport In Sige Superlattice Thin Films And Nanowires: Effects Of Specimen And Periodic Lengths, Keng-Hua Lin, Alejandro Strachan Mar 2013

Thermal Transport In Sige Superlattice Thin Films And Nanowires: Effects Of Specimen And Periodic Lengths, Keng-Hua Lin, Alejandro Strachan

Birck and NCN Publications

We compute the thermal conductivity of superlattice (SL) thin films and nanowires for various SL periods and total specimen lengths using nonequilibrium molecular dynamics. Both types of materials exhibit similar behaviors with respect to SL period but the thermal conductivity of the thin films exhibits a significantly higher sensitivity to the specimen length. Notably, the thermal conductivity of SL thin films is smaller than those of the corresponding nanowires for specimen lengths below approximately 35 nm. These results arise from the complex dependence of the conductivities of the interfaces and the SL components on the specimen size and period. These …

Go to article

A Computational Study Of The Thermoelectric Performance Of Ultrathin Bi2te3 Films, Jesse Maassen, Mark S. Lundstrom Mar 2013

A Computational Study Of The Thermoelectric Performance Of Ultrathin Bi2te3 Films, Jesse Maassen, Mark S. Lundstrom

Birck and NCN Publications

The ballistic thermoelectric performance of ultrathin films of Bi2Te3, ranging in thickness from 1 to 6 quintuple layers, is analyzed using density functional theory combined with the Landauer approach. Our results show that the thinnest film, corresponding to a single quintuple layer, has an intrinsic advantage originating from the particular shape of its valence band, leading to a large power factor and figure-of-merit exceeding bulk Bi2Te3. The interaction between the top and bottom topological surface states is key. The thinnest film yields a six-fold increase in power factor compared to bulk. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794534]

Go to article

Limitations Of The High-Low C-V Technique For Mos Interfaces With Large Time Constant Dispersion, Ashish Verma Penumatcha, Steven Swandono, James A. Cooper Mar 2013

Limitations Of The High-Low C-V Technique For Mos Interfaces With Large Time Constant Dispersion, Ashish Verma Penumatcha, Steven Swandono, James A. Cooper

Birck and NCN Publications

We discuss the limitations of the high-low CV technique in evaluating the interface trap density (D-TT) in MOS samples with a large time constant dispersion, as occurs in silicon carbide (SiC). We show that the high-low technique can seriously underestimate D-IT for samples with large time constant dispersion, even if elevated temperatures are used to extend the range of validity.

Go to article

High-Resolution Dynamic Atomic Force Microscopy In Liquids With Different Feedback Architectures, John Melcher, David Martinez-Martin, Miriam Jaafar, Julio Gomez-Herrero, Arvind Raman Feb 2013

High-Resolution Dynamic Atomic Force Microscopy In Liquids With Different Feedback Architectures, John Melcher, David Martinez-Martin, Miriam Jaafar, Julio Gomez-Herrero, Arvind Raman

Birck and NCN Publications

The recent achievement of atomic resolution with dynamic atomic force microscopy (dAFM) [Fukuma et al., Appl. Phys. Lett. 2005, 87, 034101], where quality factors of the oscillating probe are inherently low, challenges some accepted beliefs concerning sensitivity and resolution in dAFM imaging modes. Through analysis and experiment we study the performance metrics for high-resolution imaging with dAFM in liquid media with amplitude modulation (AM), frequency modulation (FM) and drive-amplitude modulation (DAM) imaging modes. We find that while the quality factors of dAFM probes may deviate by several orders of magnitude between vacuum and liquid media, their sensitivity to tip-sample forces …

Go to article

Cross-Plane Thermal Properties Of Transition Metal Dichalcogenides, C. Muratore, V. Varshney, J. J. Gengler, J. J. Hu, J. E. Bultman, T. M. Smith, P. J. Shamberger, Bo Qiu, Xiulin Ruan, A. K. Roy, A. A. Voevodin Feb 2013

Cross-Plane Thermal Properties Of Transition Metal Dichalcogenides, C. Muratore, V. Varshney, J. J. Gengler, J. J. Hu, J. E. Bultman, T. M. Smith, P. J. Shamberger, Bo Qiu, Xiulin Ruan, A. K. Roy, A. A. Voevodin

Birck and NCN Publications

In this work, we explore the thermal properties of hexagonal transition metal dichalcogenide compounds with different average atomic masses but equivalent microstructures. Thermal conductivity values of sputtered thin films were compared to bulk crystals. The comparison revealed a > 10 fold reduction in thin film thermal conductivity. Structural analysis of the films revealed a turbostratic structure with domain sizes on the order of 5-10 nm. Estimates of phonon scattering lengths at domain boundaries based on computationally derived group velocities were consistent with the observed film microstructure, and accounted for the reduction in thermal conductivity compared to values for bulk crystals. (C) …

Go to article

Interfacial Thermal Conductance Limit And Thermal Rectification Across Vertical Carbon Nanotube/Graphene Nanoribbon-Silicon Interfaces, Ajit K. Vallabhaneni, Bo Qiu, Jiuning Hu, Yong P. Chen, Ajit K. Roy, Xiulin Ruan Feb 2013

Interfacial Thermal Conductance Limit And Thermal Rectification Across Vertical Carbon Nanotube/Graphene Nanoribbon-Silicon Interfaces, Ajit K. Vallabhaneni, Bo Qiu, Jiuning Hu, Yong P. Chen, Ajit K. Roy, Xiulin Ruan

Birck and NCN Publications

Various models were previously used to predict interfacial thermal conductance of vertical carbon nanotube (CNT)-silicon interfaces, but the predicted values were several orders of magnitude off the experimental data. In this work, we show that the CNT filling fraction (the ratio of contact area to the surface area of the substrate) is the key to remedy this discrepancy. Using molecular dynamics, we have identified an upper limit of thermal interface conductance for C-Si interface which is around 1.25GW/m(2)K, corresponding to a 100% filling fraction of carbon nanotube or graphene nanoribbon on substrate. By extrapolating to low filling fraction (similar to …

Go to article

Unidirectional Spaser In Symmetry-Broken Plasmonic Core-Shell Nanocavity, Xiangeng Meng, Urcan Guler, Alexander V. Kildishev, Koji Fujita, Katsuhisa Tanaka, Vladimir M. Shalaev Feb 2013

Unidirectional Spaser In Symmetry-Broken Plasmonic Core-Shell Nanocavity, Xiangeng Meng, Urcan Guler, Alexander V. Kildishev, Koji Fujita, Katsuhisa Tanaka, Vladimir M. Shalaev

Birck and NCN Publications

The spaser, a quantum amplifier of surface plasmons by stimulated emission of radiation, is recognized as a coherent light source capable of confining optical fields at subwavelength scale. The control over the directionality of spasing has not been addressed so far, especially for a single-particle spasing nanocavity where optical feedback is solely provided by a plasmon resonance. In this work we numerically examine an asymmetric spaser - a resonant system comprising a dielectric core capped by a metal semishell. The proposed spaser emits unidirectionally along the axis of the semishell; this directionality depends neither on the incident polarization nor on …

Go to article

Strong Heavy-To-Light Hole Intersubband Absorption In The Valence Band Of Carbon-Doped Gaas/Alas Superlattices, M. I. Hossain, Z. Ikonic, J. Watson, J. Shao, P. Harrison, Michael J. Manfra, O. Malis Feb 2013

Strong Heavy-To-Light Hole Intersubband Absorption In The Valence Band Of Carbon-Doped Gaas/Alas Superlattices, M. I. Hossain, Z. Ikonic, J. Watson, J. Shao, P. Harrison, Michael J. Manfra, O. Malis

Birck and NCN Publications

We report strong mid-infrared absorption of in-plane polarized light due to heavy-to-light hole intersubband transitions in the valence band of C-doped GaAs quantum wells with AlAs barriers. The transition energies are well reproduced by theoretical calculations including layer inter-diffusion. The inter-diffusion length was estimated to be 8 +/- 2 angstrom, a value that is consistent with electron microscopy measurements. These results highlight the importance of modeling the nanoscale structure of the semiconductors for accurately reproducing intra-band transition energies of heavy carriers such as the holes. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790305]

Go to article

Optoelectronic Measurement Of X-Ray Synchrotron Pulses: A Proof Of Concept Demonstration, Stephen M. Durbin, Aamer Mahmood, Marc W. Caffee, Sergei Savikhin, Eric M. Dufresne, Haidan Wen, Yuelin Li Feb 2013

Optoelectronic Measurement Of X-Ray Synchrotron Pulses: A Proof Of Concept Demonstration, Stephen M. Durbin, Aamer Mahmood, Marc W. Caffee, Sergei Savikhin, Eric M. Dufresne, Haidan Wen, Yuelin Li

Birck and NCN Publications

Optoelectronic detection using photoconductive coplanar stripline devices has been applied to measuring the time profile of x-ray synchrotron pulses, a proof of concept demonstration that may lead to improved time-resolved x-ray studies. Laser sampling of current vs time delay between 12 keV x-ray and 800 nm laser pulses reveal the similar to 50 ps x-ray pulse width convoluted with the similar to 200 ps lifetime of the conduction band carriers. For GaAs implanted with 8 MeV protons, a time profile closer to the x-ray pulse width is observed. The protons create defects over the entire depth sampled by the x-rays, …

Go to article

A Computational Approach To Optimize Microring Resonators For Biosensing Applications, Justin C. Wirth, B. R. Wenner, M. S. Allen, J. W. Allen, M. Qi Feb 2013

A Computational Approach To Optimize Microring Resonators For Biosensing Applications, Justin C. Wirth, B. R. Wenner, M. S. Allen, J. W. Allen, M. Qi

Birck and NCN Publications

Microcavity structures have recently found utility in chemical/biological sensing applications. The appeal of these structures over other refractive index-based sensing schemes, such as those based on surface plasmon resonance, lies in their potential for producing a highly sensitive response to binding events. High-Q devices, characterized by sharp line widths, are extremely attractive for sensing applications because the bound analyte provides an increased optical pathlength, thus shifting the resonant frequency of the device. In this work, we design and simulate resonant microrings using full-wave finite element models. In addition to structure design, integration of the biological recognition element on the resonator …

Go to article

Red-Green-Blue Light Sensitivity Of Oxide Nanowire Transistors For Transparent Display Applications, Sumi Lee, Seongmin Kim, David B. Janes, M. Meyyappan, Sanghyun Ju Jan 2013

Red-Green-Blue Light Sensitivity Of Oxide Nanowire Transistors For Transparent Display Applications, Sumi Lee, Seongmin Kim, David B. Janes, M. Meyyappan, Sanghyun Ju

Birck and NCN Publications

In this study, the sensitivity of oxide nanowire transistors under red (R, 470 nm), green (G, 530 nm), and blue (B, 625 nm) light illumination was investigated. As the wavelength of light illuminating the nanowire channel region became shorter, a negative shift of threshold voltage, degradation of subthreshold slope, and increase of on-current were observed. This phenomenon can be explained in terms of photoinduced holes, creating interfacial traps between the gate dielectric and nanowire channel or reacting with oxygen ions on the surface of the nanowires. Thus, the attempt to minimize characteristic changes due to all RGB light sources was …

Go to article

Implementation Of Quantum Logic Gates Using Polar Molecules In Pendular States, Jing Zhu, Sabre Kais, Qi Wei, Dudley Herschbach, Bretislav Friedrich Jan 2013

Implementation Of Quantum Logic Gates Using Polar Molecules In Pendular States, Jing Zhu, Sabre Kais, Qi Wei, Dudley Herschbach, Bretislav Friedrich

Birck and NCN Publications

No abstract provided.

Go to article

Quantum Algorithm And Circuit Design Solving The Poisson Equation, Yudong Cao, Anargyros Papageorgiou, Iasonas Petras, Joseph Traub, Sabre Kais Jan 2013

Quantum Algorithm And Circuit Design Solving The Poisson Equation, Yudong Cao, Anargyros Papageorgiou, Iasonas Petras, Joseph Traub, Sabre Kais

Birck and NCN Publications

The Poisson equation occurs in many areas of science and engineering. Here we focus on its numerical solution for an equation in d dimensions. In particular we present a quantum algorithm and a scalable quantum circuit design which approximates the solution of the Poisson equation on a grid with error epsilon. We assume we are given a superposition of function evaluations of the right-hand side of the Poisson equation. The algorithm produces a quantum state encoding the solution. The number of quantum operations and the number of qubits used by the circuit is almost linear in d and polylog in …

Go to article

Diffusive And Ballistic Thermo-Electric Transport, Ali Shakouri Jan 2013

Diffusive And Ballistic Thermo-Electric Transport, Ali Shakouri

Birck and NCN Publications

The efficiency of existing thermoelectric power generators is much lower than mechanical engines. We discuss the similarities and differences between solid-state thermoelectric devices and other thermal engines. In nanostructured materials, non-equilibrium energy and current transport could be important. We describe the transition between ballistic and diffusive regimes and how this can alter the thermoelectric effects and improve the energy conversion efficiency.

Go to article

New Tools For The Direct Characterisation Of Finfets, G. C. Tettamanzi, A. Paul, S. Lee, Gerhard Klimeck, S. Rogge Jan 2013

New Tools For The Direct Characterisation Of Finfets, G. C. Tettamanzi, A. Paul, S. Lee, Gerhard Klimeck, S. Rogge

Birck and NCN Publications

This paper discusses how classical transport theories such as the thermionic emission (Ref. [1]), can be used as a powerful tool for the study and the understanding of the most complex mechanisms of transport in Fin Field Effect Transistors (FinFETs). By means of simple current and differential conductance measurements, taken at different temperatures and different gate voltages (VG's), it is possible to extrapolate the evolution of important parameters such as the spatial region of transport and the height of thermionic barrier at the centre of the channel. Furthermore, if the measurements are used in conjunction with simulated data, it becomes …

Go to article

Quantum Computing With Steady State Spin Currents, Brian Matthew Sutton Jan 2013

Quantum Computing With Steady State Spin Currents, Brian Matthew Sutton

Open Access Theses

Many approaches to quantum computing use spatially confined qubits in the presence of dynamic fields to perform computation. These approaches are contrasted with proposals using mobile qubits in the presence of static fields. In this thesis, steady state quantum computing using mobile electrons is explored using numerical modeling. Firstly, a foundational introduction to the case of spatially confined qubits embodied via quantum dots is provided. A collection of universal gates implemented with dynamic fields is described using simulations. These gates are combined to implement a five-qubit Grover search to provide further insight on the time-dependent field approach. Secondly, the quantum …

Go to article

Orientation Controllable Epitaxial Vapor-Liquid-Solid Semiconductor Nanowire Synthesis On Silicon Substrate, Sung Hwan Chung Jan 2013

Orientation Controllable Epitaxial Vapor-Liquid-Solid Semiconductor Nanowire Synthesis On Silicon Substrate, Sung Hwan Chung

Open Access Dissertations

Semiconductor nanowires synthesized via the vapor-liquid-solid (VLS) mechanism have attracted extensive research interest in recent years owing to their unique structure as a promising candidate for the future electronic devices. Germanium and silicon nanowires, in particular, are compatible with the current silicon-based technology via direct assembly. However, one of the main challenges for the successful nanowire application in large-scale is the lack of the method for obtaining nanowires in desired positions and directions. Therefore, the comprehensive, systematic understanding of epitaxial nanowire growth and the more suitable method to align nanowires on novel structure are required. In this work, the synthesis …

Go to article

Accurate Prediction Of Spectral Phonon Relaxation Time And Thermal Conductivity Of Intrinsic And Perturbed Materials, Tianli Feng Jan 2013

Accurate Prediction Of Spectral Phonon Relaxation Time And Thermal Conductivity Of Intrinsic And Perturbed Materials, Tianli Feng

Open Access Theses

The prediction of spectral phonon relaxation time, mean-free-path, and thermal conductivity can provide significant insights into the thermal conductivity of bulk and nanomaterials, which are important for thermal management and thermoelectric applications. We perform frequency-domain normal mode analysis (NMA) on pure bulk argon and pure bulk germanium. Spectral phonon properties, including the phonon dispersion, relaxation time, mean free path, and thermal conductivity of argon and germanium at different temperatures have been calculated. We find the dependence of phonon relaxation time τ on frequency ω and temperature T vary from ~ω-1.3 to ~ω-1.8 and ~T-0.8 to ~T-1.8 …

Go to article

Suppressing Leakage By Localized Doping In Si Nanotransistor Channels, Jesse Maassen, Hong Guo Dec 2012

Suppressing Leakage By Localized Doping In Si Nanotransistor Channels, Jesse Maassen, Hong Guo

Birck and NCN Publications

By first principles atomistic analysis we demonstrate how controlled localized doping distributions in nanoscale Si transistors can suppress leakage currents. We consider dopants (B and P atoms) to be randomly confined to a approximate to 1 nmwidth doping region in the channel. If this region is located away from the electrodes, roughly 20% of the channel length L, the tunneling leakage is reduced 2x compared to the case of uniform doping and shows little variation. Oppositely, we find the leakage current increases by orders of magnitude and may result in large device variability. We calculate the maximum and minimum conductance …

Go to article

Real Time X-Ray Studies During Nanostructure Formation On Silicon Via Low Energy Ion Beam Irradiation Using Ultrathin Iron Films, Osman El-Atwani, Anastassiya Suslova, Alexander Demasi, Sean Gonderman, Justin Fowler, Mohamad El-Atwani, Karl Ludwig, Jean Paul Allain Dec 2012

Real Time X-Ray Studies During Nanostructure Formation On Silicon Via Low Energy Ion Beam Irradiation Using Ultrathin Iron Films, Osman El-Atwani, Anastassiya Suslova, Alexander Demasi, Sean Gonderman, Justin Fowler, Mohamad El-Atwani, Karl Ludwig, Jean Paul Allain

Birck and NCN Publications

Real time grazing incidence small angle x-ray scattering and x-ray fluorescence (XRF) are used to elucidate nanodot formation on silicon surfaces during low energy ion beam irradiation of ultrathin iron-coated silicon substrates. Four surface modification stages were identified: (1) surface roughening due to film erosion, (2) surface smoothing and silicon-iron mixing, (3) structure formation, and (4) structure smoothing. The results conclude that 2.5 x 10(15) iron atoms in a 50 nm depth triggers surface nanopatterning with a correlated nanodots distance of 25 nm. Moreover, there is a wide window in time where the surface can have correlated nanostructures even after …

Go to article

Universal Programmable Quantum Circuit Schemes To Emulate An Operator, Anmer Daskin, Ananth Grama, Giorgos Kollias, Sabre Kais Dec 2012

Universal Programmable Quantum Circuit Schemes To Emulate An Operator, Anmer Daskin, Ananth Grama, Giorgos Kollias, Sabre Kais

Birck and NCN Publications

Unlike fixed designs, programmable circuit designs support an infinite number of operators. The functionality of a programmable circuit can be altered by simply changing the angle values of the rotation gates in the circuit. Here, we present a new quantum circuit design technique resulting in two general programmable circuit schemes. The circuit schemes can be used to simulate any given operator by setting the angle values in the circuit. This provides a fixed circuit design whose angles are determined from the elements of the given matrix-which can be non-unitary-in an efficient way. We also give both the classical and quantum …

Go to article

The Effect Of Native Oxide On Ion-Sputtering-Induced Nanostructure Formation On Gasb Surfaces, Osman El-Atwani, Jean Paul Allain, Anastassiya Suslova Dec 2012

The Effect Of Native Oxide On Ion-Sputtering-Induced Nanostructure Formation On Gasb Surfaces, Osman El-Atwani, Jean Paul Allain, Anastassiya Suslova

Birck and NCN Publications

We have investigated the influence of native oxides on ion-sputtering-induced nanostructure formation on GaSb using in situ low energy ion scattering spectroscopy (LEISS) and X-ray photoelectron spectroscopy (XPS). Comparing an oxygen-free sample with a native oxide sample, LEISS and XPS reveal the effect of oxygen in generating higher surface Ga fractions during early stages (fluences of 1 x 10(15)-1 x 10(16) cm(-2)) of low energy (< 100 eV) Ar+ irradiation. Enhanced surface Ga and Ga2O3 fractions were also observed on "oxide free" samples exposed to air following irradiation. The results suggest preferential Ga oxidation and segregation on the top of the amorphous layer if oxygen is present on the surface. In addition, the native oxide also increases the fluence threshold for nanopatterning of GaSb surfaces by almost a factor of four during low energy irradiation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772980]

Go to article

An Investigation Of The Optical Properties Of Disordered Silicon Nanowire Mats, Hua Bao, Weixia Zhang, Liangliang Chen, Haoxiang Huang, Chen Yang, Xiulin Ruan Dec 2012

An Investigation Of The Optical Properties Of Disordered Silicon Nanowire Mats, Hua Bao, Weixia Zhang, Liangliang Chen, Haoxiang Huang, Chen Yang, Xiulin Ruan

Birck and NCN Publications

Optical reflectance spectra of three disordered silicon nanowire mats with average diameters of 40, 60, and 80 nm are investigated both experimentally and theoretically. The total hemispherical reflectance spectra from 200 to 1600 nm wavelength are first measured. All three samples exhibit reflectance about 15% to 20% within the ultraviolet band. As the wavelength becomes longer, the reflectance will first increase to around 50% and then decrease to below 20%. Such reflectance spectra are attributed to the combined effect of silicon dielectric function, the nanowire geometry, and the volume fraction of the mats. An analytical method based on Mie scattering …

Go to article

Increased Normal Incidence Photocurrent In Quantum Dot Infrared Photodetectors, Jiayi Shao, Thomas E. Vandervelde, Ajit Barve, Andreas Stintz, Sanjay Krishna Dec 2012

Increased Normal Incidence Photocurrent In Quantum Dot Infrared Photodetectors, Jiayi Shao, Thomas E. Vandervelde, Ajit Barve, Andreas Stintz, Sanjay Krishna

Birck and NCN Publications

We have increased the ratio of s-polarization (normal incidence) to p-polarization photocurrent to 50% in a quantum dot-in-a-well based infrared photodetector form the typical s-p polarization ratio about 20%. This improvement was achieved by engineering the dot geometry and the quantum confinement via post growth capping materials of the Stranski Krastanov growth mode quantum dots (QDs). The TEM images show that the height to base ratio of shape engineered QDs was increased to 8 nm/12 nm from the control sample's ratio 4 nm/17 nm. The dot geometry correlates with the polarized photocurrent measurements of the detector. (C) 2012 American Institute …

Go to article

Note: A Transimpedance Amplifier For Remotely Located Quartz Tuning Forks, Ethan Kleinbaum, Gabor Csathy Dec 2012

Note: A Transimpedance Amplifier For Remotely Located Quartz Tuning Forks, Ethan Kleinbaum, Gabor Csathy

Birck and NCN Publications

The cable capacitance in cryogenic and high vacuum applications of quartz tuning forks imposes severe constraints on the bandwidth and noise performance of the measurement. We present a single stage low noise transimpedance amplifier with a bandwidth exceeding 1 MHz and provide an in-depth analysis of the dependence of the amplifier parameters on the cable capacitance. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769271]

Go to article

Contrasting Energy Scales Of Reentrant Integer Quantum Hall States, Nianpei Deng, J. D. Watson, L. P. Rokhinson, M. J. Manfra, G. A. Csathy Nov 2012

Contrasting Energy Scales Of Reentrant Integer Quantum Hall States, Nianpei Deng, J. D. Watson, L. P. Rokhinson, M. J. Manfra, G. A. Csathy

Birck and NCN Publications

We report drastically different onset temperatures of the reentrant integer quantum Hall states in the second and third Landau level. This finding is in quantitative disagreement with the Hartree-Fock theory of the bubble phases which is thought to describe these reentrant states. Our results indicate that the number of electrons per bubble in either the second or the third Landau level is likely different than predicted.

Go to article

First Prev Next Last