Nanoscience and Nanotechnology Commons^™

Enhanced Adhesion Of Superhydrophobic Zno Surface, Liqiu Zheng Dr., Chan Kwaichow B.

Georgia Journal of Science

The superhydrophobicity and the strong solid-liquid adhesion of the dually structured ZnO surface are attributed to the suitable size of microstructure and nanostructure. This phenomenon, so different from the Lotus effect, can be called the Petal effect— the super hydrophobicity and the enhanced solid-liquid adhesion coexist on the same surface. The Cassie impregnating model was proposed to understand the underlying reason.

Light-Activated Photocurrent Degradation And Self-Healing In Perovskite Solar Cells, Wanyi Nie, Jean-Christophe Blancon, Amanda J. Neukirch, Kannatassen Appavoo, Hsinhan Tsai, Manish Chhowalla, Muhammad A. Alam, Matthew Y. Sfeir, Claudine Katan, Jacky Even, Sergei Tretiak, Jared J. Crochet, Gautam Gupta, Aditya D. Mohite

Publications and Research

Solution-processed organometallic perovskite solar cells have emerged as one of the most promising thin-film photovoltaic technology. However, a key challenge is their lack of stability over prolonged solar irradiation. Few studies have investigated the effect of light soaking on hybrid perovskites and have attributed the degradation in the optoelectronic properties to photochemical or field-assisted ion migration. Here we show that the slow photocurrent degradation in thin-film photovoltaic devices is due to the formation of light-activated meta-stable deep-level trap states. However, the devices can self-heal completely by resting them in the dark for <1 min or the degradation can be completely prevented by operating the devices at 0°C. We investigate several physical mechanisms to explain the microscopic origin for the formation of these trap states, among which the creation of small polaronic states involving localized cooperative lattice strain and molecular orientations emerges as a credible microscopic mechanism requiring further detailed studies.

Optical Analysis And Fabrication Of Micro And Nanoscale Plasmonically Enhanced Devices, Avery M. Hill

Physics Undergraduate Honors Theses

Plasmonic nanostructures have been shown to act as optical antennas that enhance optical devices due to their ability to focus light below the diffraction limit of light and enhance the intensity of the incident light. This study focuses on computational electromagnetic (CEM) analysis of two devices: 1) GaAs photodetectors with Au interdigital electrodes and 2) Au thin-film microstructures. Experiments showed that the photoresponse of the interdigital photodetectors depend greatly on the electrode gap and the polarization of the incident light. Smaller electrode gap and transverse polarization give rise to a larger photoresponse. It was also shown that the response from …

Optical Analysis And Fabrication Of Micro And Nanoscale Plasmonically Enhanced Devices, Avery M. Hill

Mechanical Engineering Undergraduate Honors Theses

Plasmonic nanostructures have been shown to act as optical antennas that enhance optical devices due to their ability to focus light below the diffraction limit of light and enhance the intensity of the incident light. This study focuses on computational electromagnetic (CEM) analysis of two devices: 1) GaAs photodetectors with Au interdigital electrodes and 2) Au thin-film microstructures. Experiments showed that the photoresponse of the interdigital photodetectors depend greatly on the electrode gap and the polarization of the incident light. Smaller electrode gap and transverse polarization give rise to a larger photoresponse. It was also shown that the response from …

Tunable Controlled Release Of Molecular Species From Halloysite Nanotubes, Divya Narayan Elumalai

Doctoral Dissertations

Encouraged by potential applications in rust coatings, self-healing composites, selective delivery of drugs, and catalysis, the transport of molecular species through Halloysite nanotubes (HNTs), specifically the storage and controlled release of these molecules, has attracted strong interest in recent years. HNTs are a naturally occurring biocompatible nanomaterial that are abundantly and readily available. They are alumosilicate based tubular clay nanotubes with an inner lumen of 15 nm and a length of 600-900 nm. The size of the inner lumen of HNTs may be adjusted by etching. The lumen can be loaded with functional agents like antioxidants, anticorrosion agents, flame-retardant agents, …

Ferroelectric Characterization And Growth Optimization Of Thermally Evaporated Vinylidene Fluoride Thin Films, Keith Foreman, N. Hong, C. Labedz, C. Shearer, Stephen Ducharme, Shireen Adenwalla

Shireen Adenwalla Papers

Organic thin films have numerous advantages over inorganics in device processing and price. The large polarization of the organic ferroelectric oligomer vinylidene fluoride (VDF) could prove useful for both device applications and the investigation of fundamental physical phenomena. A VDF oligomer thin film vacuum deposition process, such as thermal evaporation, preserves film and interface cleanliness, but is challenging, with successful deposition occurring only within a narrow parameter space. We report on the optimal deposition parameters for VDF oligomer thin films, refining the parameter space for successful deposition, resulting in a high yield of robust ferroelectric films. In particular, we investigate …

Optimization Of Transition-Metal Dichalcogenides Based Field- Effect- Transistors Via Contact Engineering, Meeghage Madusanka Perera

Wayne State University Dissertations

ABSTRACT

Optimization of Transition-Metal Dichalcogenides based Field- Effect-Transistors via contact engineering

by

Meeghage M Perera

September , 2016

Advisor : Dr. Zhixian Zhou

Major: Physics (Condensed mater physics/nano-electronics)

Degree: Doctor of Philosophy

Layered transition Metal Dichalcogenides (TMDs) have demonstrated a wide range of remarkable properties for applications in next generation nano-electronics. These systems have displayed many “graphene-like” properties including a relatively high carrier mobility, mechanical flexibility, chemical and thermal stability, and moreover offer the significant advantage of a substantial band gap. However, the fabrication of high performance field-effect transistors (FETs) of TMDs is challenging mainly due to the formation of …

Tailoring Optical And Plasmon Resonances In Core-Shell And Core-Multishell Nanowires, Sarath Ramadurgam

Open Access Dissertations

Semiconductor nanowires (NWs) are sub-wavelength structures which exhibit strong optical (Mie) resonances in the visible range. In addition to such optical resonances, the localized surface plasmon resonances (LSPR) in metal and semiconductor (or dielectric) based core-shell (CS) and core-multishell (CMS) NWs can be tailored to achieve novel negative-index metamaterials (NIM), extreme absorbers, invisibility cloaks and sensors. Particularly, in this dissertation, the versatility of CS and CMS NWs for the design of negative-index metamaterials in the visible range and, plasmonic light harvesting in ultrathin photocatalyst layers for water splitting are studied.

Utilizing the LSPR in the metal layer and the magnetic …

The Dawn Of New Quantum Dots: Synthesis And Characterization Of Ge1-Xsnx Nanocrystals For Tunable Bandgaps., Richard J. Esteves

Theses and Dissertations

Ge_1-xSn_x alloys are among a small class of benign semiconductors with composition tunable bandgaps in the near-infrared spectrum. As the amount of Sn is increased the band energy decreases and a transition from indirect to direct band structure occurs. Hence, they are prime candidates for fabrication of Si-compatible electronic and photonic devices, field effect transistors, and novel charge storage device applications. Success has been achieved with the growth of Ge_1-xSn_x thin film alloys with Sn compositions up to 34%. However, the synthesis of nanocrystalline alloys has proven difficult due to larger discrepancies (~14%) in …

Substrate Effects And Dielectric Integration In 2d Electronics, Bhim Prasad Chamlagain

Wayne State University Dissertations

The ultra-thin body of monolayer (and few-layer) two dimensional (2D) semiconducting materials such as transitional metal dichalconiges (TMDs), black phosphorous (BP) has demonstrated tremendous beneficial physical, transport, and optical properties for a wide range of applications. Because of their ultrathin bodies, the properties of 2D materials are highly sensitive to environmental effects. Particularly, the performance of 2D semiconductor electronic devices is strongly dependent on the substrate/dielectric properties, extrinsic impurities and absorbates. In this work, we systematically studied the transport properties of mechanically exfoliated few layer TMD field-effect transistors (FETs) consistently fabricated on various substrates including SiO2,Parylene –C, Al2O3, SiO2 modified …

Tailoring The Optical Properties Of Silicon With Ion Beam Created Nanostructures For Advanced Photonics Applications, Perveen Akhter

Legacy Theses & Dissertations (2009 - 2024)

In today’s fast life, energy consumption has increased more than ever and with that the demand for a renewable and cleaner energy source as a substitute for the fossil fuels has also increased. Solar radiations are the ultimate source of energy but harvesting this energy in a cost effective way is a challenging task. Si is the dominating material for microelectronics and photovoltaics. But owing to its indirect band gap, Si is an inefficient light absorber, thus requiring a thickness of solar cells beyond tens of microns which increases the cost of solar energy. Therefore, techniques to increase light absorption …

Magnetoresistance Of A Low-K Dielectric, Brian Thomas Mcgowan

Legacy Theses & Dissertations (2009 - 2024)

Low-k dielectrics have been incorporated into advanced computer chip technologies as a part of the continuous effort to improve computer chip performance. One drawback associated with the implementation of low-k dielectrics is the large leakage current which conducts through the material, relative to silica. Another drawback is that the breakdown voltage of low-k dielectrics is low, relative to silica [1]. This low breakdown voltage makes accurate reliability assessment of the failure mode time dependent dielectric breakdown (TDDB) in low-k dielectrics critical for the successful implementation of these materials. The accuracy with which one can assess this reliability is currently a …

Uv Light-Induced Aggregation Of Titania Submicron Particles, Can Zhou, Yashar Bashirzadeh, Timothy A. Bernadowsky Jr., Xiaoyu Zhang

Mechanical & Aerospace Engineering Faculty Publications

In this study, aggregation of TiO₂ (rutile and anatase) submicron particles in deionized (DI) water under ultra-violet (UV) light irradiation was investigated. While no aggregation was observed in the dark, rutile and anatase submicron particles started aggregating upon application of UV light and ceased aggregation in about 2 and 8.4 h, respectively. It has been demonstrated that UV light directly mitigated the particle mobility of TiO₂, resulting in a neutralization effect of the Zeta potential. It was also observed that rutile particles aggregated much faster than anatase particles under UV radiation, indicating that the Zeta potential of …

The Metal/Organic Interface In Cobalt/Vinylidene Fluoride Heterostructures, Keith Foreman, E Echeverria, Mark A. Koten, R. M. Lindsay, N. Hong, Jeffrey E. Shield, Shireen Adenwalla

Shireen Adenwalla Papers

Organic-based electronic devices are rapidly increasing in popularity, making it essential to understand and characterize the interface between organic materials and metallic electrodes. This work reports on the characterization of the interface between thin films of an emerging organic ferroelectric, vinylidene fluoride (VDF) oligomer, and Co, an important high Curie temperature ferromagnet. Using a wide battery of experimental techniques, it is shown that VDF oligomer thin films as thin as 15 nm can halt, or prevent, Co oxidization in atmospheric conditions, a necessary condition for device applications. Selectivity of magnetic properties, such as remanent magnetization, is enabled by the clarification …

An Assessment Of The Validity Of The Kinetic Model For Liquid-Vapor Phase Change By Examining Cryogenic Propellants, Kishan Bellur

Dissertations, Master's Theses and Master's Reports

Evaporation is ubiquitous in nature and occurs even in a microgravity space envi- ronment. Long term space missions require storage of cryogenic propellents and an accurate prediction of phase change rates. Kinetic theory has been used to model and predict evaporation rates for over a century but the reported values of accommodation coefficients are highly inconsistent and no accurate data is available for cryogens. The proposed study involves a combined experimental and computational approach to ex- tract the accommodation coefficients. Neutron imaging is used as the visualization technique due to the difference in attenuation between the cryogen and the metallic …

Slip-Jump Model For Carbon Combustion Synthesis Of Complex Oxide Nanoparticles, A. A. Markov, Mkhitar A. Hobosyan, Karen S. Martirosyan

Physics & Astronomy Faculty Publications

Carbon Combustion Synthesis of Oxides (CCSO) is a promising method to produce submicron- and nano- sized complex oxides. The CCSO was successfully utilized for producing several complex oxides, a complete theoretical model including the sample porosity, fl ow parameters and reaction energetics is needed to predict the combustion parameters for CCSO. In this work, we studied the ignition temperature and combustion wave axial temperature distribution, activation energy, combustion heat and thermal losses for a typical CCSO synthesis for cylindrical samples of Ni-Zn ferrites with high (>85%) porosity. We developed a two level combustion model of chemically active nano-dispersed mixture, …

Optical Communication Using Hybrid Micro Electro Mechanical Structures (Mems) And Commercial Corner Cube Retroreflector (Ccr), Sunny Kedia

USF Tampa Graduate Theses and Dissertations

This dissertation presents a free-space, long-range, passive optical communication system that uses electrostatically modulated microelectromechanical systems (MEMS) structures coupled with a glass total internal reflection (TIR)-type corner cube retroreflector (CCR) as a non-emitting data transmitter. A CCR consists of three mirrors orthogonal to each other, so that the incident beam is reflected back to the incident beam, source. The operational concept is to have a MEMS modulator fusion with TIR CCR, such that the modulators are working periodically to disrupt the evanescent waves at the air interface of one of the three back glass faces of a TIR CCR. The …

In Vacuo Fabrication And Electronic Structure Characterization Of Atomic Layer Deposition Thin Films, Michael Schaefer

USF Tampa Graduate Theses and Dissertations

Improvement of novel electronic devices is possible by tailor-designing the electronic structure at device interfaces. Common problems observed at interfaces are related to unwanted band alignment caused by the chemical diversity of interface partners, influencing device performance negatively. One way to address this problem is by introducing ultra-thin interfacial dipole layers, steering the band alignment in a desired direction. The requirements are strict in terms of thickness, conformity and low density of defects, making sophisticated deposition techniques necessary. Atomic layer deposition (ALD) with its Ångstrom-precise thickness control can fulfill those requirements.

The work presented here encompasses the implementation of an …

Nanomechanical And Nanotribological Characterization Of Sub-Micron Polymeric Spheres, Himanshu Kumar Verma

USF Tampa Graduate Theses and Dissertations

Friction between nanoscale objects has been a subject of great interest and intense research effort for the last two decades. However, the vast majority of the work done in this area has focused upon the sliding friction between two rigid, atomically smooth surfaces. Thus the parameter most explored has been the corrugation in the atomic potentials and how this affects the force required to slide one object across another. In truth, many nanoscale objects whose translation force is of practical interest are more spherical in nature. We hypothesize that the factors that determine the translation force will be related, not …

Engineering The Ground State Of Complex Oxides, Derek Joseph Meyers

Graduate Theses and Dissertations

Transition metal oxides featuring strong electron-electron interactions have been at the forefront of condensed matter physics research in the past few decades due to the myriad of novel and exciting phases derived from their competing interactions. Beyond their numerous intriguing properties displayed in the bulk they have also shown to be quite susceptible to externally applied perturbation in various forms. The dominant theme of this work is the exploration of three emerging methods for engineering the ground states of these materials to access both their applicability and their deficiencies.

The first of the three methods involves a relatively new set …

Epitaxial Growth Of Silicon On Poly-Crystalline Si Seed Layer At Low Temperature By Using Hot Wire Chemical Vapor Deposition, Manal Abdullah Aldawsari

Graduate Theses and Dissertations

There has been a growing interest in using low cost material as a substrate for the large grained polycrystalline silicon photovoltaic devices. The main property of those devices is the potential of obtaining high efficiency similar to crystalline Si devices efficiency yet at much lower cost because of the thin film techniques. Epitaxial growth of Si at low temperatures on low cost large grained seed layers, prepared by aluminum induced crystallization method (AIC), using hot wire chemical vapor deposition (HWCVD) system is investigated in this thesis. In this work, different parameters have been studied in order to optimize the growth …

Growth Of Low Disorder Gaas/Algaas Heterostructures By Molecular Beam Epitaxy For The Study Of Correlated Electron Phases In Two Dimensions, John D. Watson

Open Access Dissertations

The unparalleled quality of GaAs/AlGaAs heterostructures grown by molecular beam epitaxy has enabled a wide range of experiments probing interaction effects in two-dimensional electron and hole gases. This dissertation presents work aimed at further understanding the key material-related issues currently limiting the quality of these 2D systems, particularly in relation to the fractional quantum Hall effect in the 2^nd Landau level and spin-based implementations of quantum computation.^ The manuscript begins with a theoretical introduction to the quantum Hall effect which outlines the experimental conditions necessary to study the physics of interest and motivates the use of the semiconductor growth …

Molecular Dynamics Study On Defect Reduction Strategies Towards The Fabrication Of High Performance Cd1-Xznxte/Cds Solar Cells, Jose Juan Chavez

Open Access Theses & Dissertations

Cadmium Telluride is a material widely used in terrestrial thin film photovoltaic applications due to its nearly ideal band gap (~1.5 eV) and high absorption coefficient. Due to its low manufacturing cost, this technology has the potential to become a significant energy resource if higher energy conversion efficiencies are achieved. However, the module efficiencies (~14%) are still far from the theoretical maximum (~30%) for this material in a single junction configuration. The reason behind this low performance is attributed to the high number of defects that are present within the device materials. The physics behind the formation mechanisms of these …

Novel Techniques For Quasi Three-Dimensional Nanofabrication Of Transformation Optics Devices, Paul R. West

Open Access Dissertations

Current nanofabrication is almost exclusively limited to top-down, two-dimensional techniques. As technology moves more deeply into the nano-scale regime, fabrication of new devices with quasi three-dimensional geometries shows great potential. One excellent example of an emerging field that requires this type of non-conformal 3D fabrication technique is the field of Transformation Optics. This field involves transforming and manipulating the optical space through which light propagates. Arbitrarily manipulating the optical space requires advanced fabrication techniques, which are not possible with current two-dimensional fabrication technologies. One step toward quasi three-dimensional nanofabrication involves employing angled deposition allowing new growth mechanisms, and enabling a …

Extraction Of Carrier Mobility And Interface Trap Density In Ingaas Metal Oxide Semiconductor Structures Using Gated Hall Method, Thenappan Chidambaram

Legacy Theses & Dissertations (2009 - 2024)

III-V semiconductors are potential candidates to replace Si as a channel material in next generation CMOS integrated circuits owing to their superior carrier mobilities. Low density of states (DOS) and typically high interface and border trap densities (Dit) in high mobility group III-V semiconductors provide difficulties in quantification of Dit near the conduction band edge. The trap response above the threshold voltage of a MOSFET can be very fast, and conventional Dit extraction methods, based on capacitance/conductance response (CV methods) of MOS capacitors at frequencies <1MHz, cannot distinguish conducting and trapped carriers. In addition, the CV methods have to deal with high dispersion in the accumulation region that makes it a difficult task to measure the true oxide capacitance, Cox value. Another implication of these properties of III-V interfaces is an ambiguity of determination of electron density in the MOSFET channel. Traditional evaluation of carrier density by integration of the C-V curve, gives incorrect values for Dit and mobility. Here we employ gated Hall method to quantify the Dit spectrum at the high-κ oxide/III-V semiconductor interface for buried and surface channel devices using Hall measurement and capacitance-voltage data. Determination of electron density directly from Hall measurements allows for obtaining true mobility values

An Assessment Of Critical Dimension Small Angle X-Ray Scattering Metrology For Advanced Semiconductor Manufacturing, Charles Michael Settens

Legacy Theses & Dissertations (2009 - 2024)

Simultaneous migration of planar transistors to FinFET architectures, the introduction of a plurality of materials to ensure suitable electrical characteristics, and the establishment of reliable multiple patterning lithography schemes to pattern sub-10 nm feature sizes imposes formidable challenges to current in-line dimensional metrologies. Because the shape of a FinFET channel cross-section immediately influences the electrical characteristics, the evaluation of 3D device structures requires measurement of parameters beyond traditional critical dimension (CD), including their sidewall angles, top corner rounding and footing, roughness, recesses and undercuts at single nanometer dimensions; thus, metrologies require sub-nm and approaching atomic level measurement uncertainty.

Two-Dimensional Chalcogenides : Material Synthesis And Nano-Device Applications, Robin Bay Jacobs-Gedrim

Legacy Theses & Dissertations (2009 - 2024)

Low-dimensional nanostructures exhibit distinct properties from their bulk counterparts. Here the synthesis of novel low-dimensional nanostructures is demonstrated using both top down and bottom up processes and their properties are investigated. Two-dimensional (2D) binary sesquichalcogenides are introduced as a viable material platform for phase change random access memory, photodetection, and the investigation of topological insulator surface states. An exponential relationship is observed between layer thickness and energy consumption during switching of 2D phase change devices, ultra-high responsivity in 2D photoresistors, and surface-rich conduction in 2D topological insulator nanoplates. Additionally, methods for the assessment of chemical purity, stoichiometry, and dimensions of …

Structures, Properties And Functionalities Of Magnetic Domain Walls In Thin Films, Nanowires And Atomic Chains: Micromagnetic And Ab Initio Studies, Liwei D. Geng

Dissertations, Master's Theses and Master's Reports - Open

Structures, properties and functionalities of magnetic domain walls in thin film, nanowires and atomic chains are studied by micromagnetic simulations and ab initio calculations in this dissertation. For magnetic domain walls in thin films, we computationally investigated the dynamics of one-dimensional domain wall line in ultrathin ferromagnetic film, and the exponent α = 1.24 ± 0.05 is obtained in the creep regime near depinning force, indicating the washboard potential model is supported by our simulations. Furthermore, the roughness, creep, depinning and flow of domain wall line with commonly existed substructures driven by magnetic field are also studied. Our simulation results …

Maximum Screening Fields Of Superconducting Multilayer Structures, Alex Gurevich

Physics Faculty Publications

It is shown that a multilayer comprised of alternating thin superconducting and insulating layers on a thick substrate can fully screen the applied magnetic field exceeding the superheating fields H_sof both the superconducting layers and the substrate, the maximum Meissner field is achieved at an optimum multilayer thickness. For instance, a dirty layer of thickness ~0.1μm at the Nb surface could increase H_s similar or equal to 240 mT of a clean Nb up to H_s similar or equal to 290 mT. Optimized multilayers of Nb₃Sn, NbN, some of the iron pnictides, or alloyed …

Multiscale Examination And Modeling Of Electron Transport In Nanoscale Materials And Devices, Douglas R. Banyai

Dissertations, Master's Theses and Master's Reports - Open

For half a century the integrated circuits (ICs) that make up the heart of electronic devices have been steadily improving by shrinking at an exponential rate. However, as the current crop of ICs get smaller and the insulating layers involved become thinner, electrons leak through due to quantum mechanical tunneling. This is one of several issues which will bring an end to this incredible streak of exponential improvement of this type of transistor device, after which future improvements will have to come from employing fundamentally different transistor architecture rather than fine tuning and miniaturizing the metal-oxide-semiconductor field effect transistors (MOSFETs) …