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Articles 31 - 60 of 64
Full-Text Articles in Nanoscience and Nanotechnology
Epitaxial Growth Of Si-Ge-Sn Alloys For Optoelectronic Device Application, Aboozar Mosleh
Epitaxial Growth Of Si-Ge-Sn Alloys For Optoelectronic Device Application, Aboozar Mosleh
Graduate Theses and Dissertations
Microelectronics industry has experienced a tremendous change over the last few decades and has shown that Moore’s law has been followed by doubling the number of transistors on the chip every 18 months. However, continuous scaling down of the transistors size is reaching the physical limits and data transfer through metal interconnects will not be able to catch up with the increasing data processing speed in the future. Therefore, optical data transfer between chips and on-chip has been widely investigated. Silicon based optoelectronics has received phenomenal attention since Si has been the core material on which microelectronic industry has been …
Molecular Dynamics Study On Defect Reduction Strategies Towards The Fabrication Of High Performance Cd1-Xznxte/Cds Solar Cells, Jose Juan Chavez
Molecular Dynamics Study On Defect Reduction Strategies Towards The Fabrication Of High Performance Cd1-Xznxte/Cds Solar Cells, Jose Juan Chavez
Open Access Theses & Dissertations
Cadmium Telluride is a material widely used in terrestrial thin film photovoltaic applications due to its nearly ideal band gap (~1.5 eV) and high absorption coefficient. Due to its low manufacturing cost, this technology has the potential to become a significant energy resource if higher energy conversion efficiencies are achieved. However, the module efficiencies (~14%) are still far from the theoretical maximum (~30%) for this material in a single junction configuration. The reason behind this low performance is attributed to the high number of defects that are present within the device materials. The physics behind the formation mechanisms of these …
Extraction Of Carrier Mobility And Interface Trap Density In Ingaas Metal Oxide Semiconductor Structures Using Gated Hall Method, Thenappan Chidambaram
Extraction Of Carrier Mobility And Interface Trap Density In Ingaas Metal Oxide Semiconductor Structures Using Gated Hall Method, Thenappan Chidambaram
Legacy Theses & Dissertations (2009 - 2024)
III-V semiconductors are potential candidates to replace Si as a channel material in next generation CMOS integrated circuits owing to their superior carrier mobilities. Low density of states (DOS) and typically high interface and border trap densities (Dit) in high mobility group III-V semiconductors provide difficulties in quantification of Dit near the conduction band edge. The trap response above the threshold voltage of a MOSFET can be very fast, and conventional Dit extraction methods, based on capacitance/conductance response (CV methods) of MOS capacitors at frequencies <1MHz, cannot distinguish conducting and trapped carriers. In addition, the CV methods have to deal with high dispersion in the accumulation region that makes it a difficult task to measure the true oxide capacitance, Cox value. Another implication of these properties of III-V interfaces is an ambiguity of determination of electron density in the MOSFET channel. Traditional evaluation of carrier density by integration of the C-V curve, gives incorrect values for Dit and mobility. Here we employ gated Hall method to quantify the Dit spectrum at the high-κ oxide/III-V semiconductor interface for buried and surface channel devices using Hall measurement and capacitance-voltage data. Determination of electron density directly from Hall measurements allows for obtaining true mobility values
Implementation Of Strategies To Improve The Reliability Of Iii-Nitride Photodetectors Towards The Realization Of Visible And Solar-Blind Imaging Arrays, John Bulmer
Legacy Theses & Dissertations (2009 - 2024)
Ultraviolet (UV) radiation detectors are being heavily researched for applications in non-line-of-sight (NLOS) communication systems, flame monitoring, biological detection, and astronomical studies. These applications are currently being met by the use of Si-based photomultiplier tubes (PMTs), which are bulky, fragile, expensive and require the use of external filters to achieve true visible-blind and solar-blind operation.
High Frequency Signal Transmission In Through Silicon Via Based 3d Integrated Circuit, Min Xu
High Frequency Signal Transmission In Through Silicon Via Based 3d Integrated Circuit, Min Xu
Legacy Theses & Dissertations (2009 - 2024)
Through silicon vias (TSVs) enable 3-dimensional (3D) integrated circuits (ICs), which have the potential to reduce the power consumption, interconnect length and overall communication latency in modern nanoelectronics systems. High-speed signal transmission channels through stacked silicon substrates are critical for 3D heterogeneous integration. This work presents systematic analyses of fabricated 3D IC test structures. This includes test structure design, fabrication, experimental characterization, equivalent circuit modeling and full wave simulations for high-speed signal transmission of the TSV based 3D IC channels.
Carbon 1d/2d Nanoelectronics : Integration And Device Applications, Zhaoying Hu
Carbon 1d/2d Nanoelectronics : Integration And Device Applications, Zhaoying Hu
Legacy Theses & Dissertations (2009 - 2024)
Graphene is a one-atom thick planar monolayer of sp2-bonded carbon atoms organized in a hexagonal crystal lattice. A single walled carbon nanotube (CNT) can be thought of as a graphene sheet rolled up into a seamless hollow cylinder with extremely high length-to-diameter ratio. Their ultra-thin body, large surface area, and exceptional electronic, optical and mechanical properties make these low-dimensional carbon materials ideal candidates for electronic applications. However, adopting low-dimensional carbon materials into semiconductor industry faces significant material and integration challenges. There is an urgent need for research at fundamental and applicative levels to find a roadmap for carbon nanomaterial to …
The Ph Sensing Properties Of Rf Sputtered Ruo2 Thin-Film Prepared Using Different Ar/O2 Flow Ratio, Ali Sardarinejad, Devendra Kumar Maurya, Kamal Alameh
The Ph Sensing Properties Of Rf Sputtered Ruo2 Thin-Film Prepared Using Different Ar/O2 Flow Ratio, Ali Sardarinejad, Devendra Kumar Maurya, Kamal Alameh
Research outputs 2014 to 2021
The influence of the Ar/O2 gas ratio during radio frequency (RF) sputtering of the RuO2 sensing electrode on the pH sensing performance is investigated. The developed pH sensor consists in an RF sputtered ruthenium oxide thin-film sensing electrode, in conjunction with an electroplated Ag/AgCl reference electrode. The performance and characterization of the developed pH sensors in terms of sensitivity, response time, stability, reversibility, and hysteresis are investigated. Experimental results show that the pH sensor exhibits super-Nernstian slopes in the range of 64.33-73.83 mV/pH for Ar/O2 gas ratio between 10/0-7/3. In particular, the best pH sensing performance, in …
Advanced Iii-V / Si Nano-Scale Transistors And Contacts: Modeling And Analysis, Seung Hyun Park
Advanced Iii-V / Si Nano-Scale Transistors And Contacts: Modeling And Analysis, Seung Hyun Park
Open Access Dissertations
The exponential miniaturization of Si CMOS technology has been a key to the electronics revolution. However, the continuous downscaling of the gate length becomes the biggest challenge to maintain higher speed, lower power, and better electrostatic integrity for each following generation. Hence, novel devices and better channel materials than Si are considered to improve the metal-oxide-semiconductor field-effect transistors (MOSFETs) device performance. III-V compound semiconductors and multi-gate structures are being considered as promising candidates in the next CMOS technology. III-V and Si nano-scale transistors in different architectures are investigated (1) to compare the performance between InGaAs of III-V compound semiconductors and …
Design And Analysis Of Solar Cells By Coupled Electrical - Optical Simulation, Xufeng Wang
Design And Analysis Of Solar Cells By Coupled Electrical - Optical Simulation, Xufeng Wang
Open Access Dissertations
Careful electrical design and optical design are both crucial for achieving high-efficiency solar cells. It is common to link these two aspects serially; the optical design is first done to minimize reflection and maximize light trapping, and then the resulting optical generation rate is input to the electrical simulation. For very high efficiency solar cells that approach the Shockley-Queisser limit, however, electrical and optical transports are tightly coupled in both directions. Photons generated by radiative recombination can be reabsorbed to create additional electron-hole pairs (so-called photon recycling), which decreases losses. A variety of novel photon management schemes are currently being …
Investigation Of Hfox/Cu Resistive Memory For Advanced Encryption Applications, Benjamin David Briggs
Investigation Of Hfox/Cu Resistive Memory For Advanced Encryption Applications, Benjamin David Briggs
Legacy Theses & Dissertations (2009 - 2024)
The Advanced Encryption Standard (AES) is a widely used encryption algorithm to protect data and communications in today's digital age. Modern AES CMOS implementations require large amounts of dedicated logic and must be tuned for either performance or power consumption. A high throughput, low power, and low die area AES implementation is required in the growing mobile sector. An emerging non-volatile memory device known as resistive memory (ReRAM) is a simple metal-insulator-metal capacitor device structure with the ability to switch between two stable resistance states. Currently, ReRAM is targeted as a non-volatile memory replacement technology to eventually replace flash. Its …
Development Of Novel Technologies To Enhance Performance And Reliability Of Iii-Nitride Avalanche Photodiodes, Puneet Harischandra Suvarna
Development Of Novel Technologies To Enhance Performance And Reliability Of Iii-Nitride Avalanche Photodiodes, Puneet Harischandra Suvarna
Legacy Theses & Dissertations (2009 - 2024)
Solar-blind ultraviolet avalanche photodiodes are an enabling technology for applications in the fields of astronomy, communication, missile warning systems, biological agent detection and particle physics research. Avalanche photodiodes (APDs) are capable of detecting low-intensity light with high quantum efficiency and signal-to-noise ratio without the need for external amplification. The properties of III-N materials (GaN and AlGaN) are promising for UV photodetectors that are highly efficient, radiation-hard and capable of visible-blind or solar-blind operation without the need for external filters. However, the realization of reliable and high performance III-N APDs and imaging arrays has several technological challenges. The high price and …
Development Of A One-Dimensional Position Sensitive Detector For Tracking Applications, Leigh Kent Lydecker
Development Of A One-Dimensional Position Sensitive Detector For Tracking Applications, Leigh Kent Lydecker
Legacy Theses & Dissertations (2009 - 2024)
Optical Position Sensitive Detectors (PSDs) are a non-contact method of tracking the location of a light spot. Silicon-based versions of such sensors are fabricated with standard CMOS processing, are inexpensive and provide a real-time, analog signal output corresponding to the position of the light spot. Because they are non-contact, they do not degrade over time from surface friction due to repetitive sliding motion associated with standard full contact sliding potentiometers. This results in long, reliable device lifetimes. In this work, an innovative PSD was developed to replace the linear hard contact potentiometer currently being used in a human-computer interface architecture.
Solar Cell Temperature Dependent Efficiency And Very High Temperature Efficiency Limits, John Robert Wilcox
Solar Cell Temperature Dependent Efficiency And Very High Temperature Efficiency Limits, John Robert Wilcox
Open Access Dissertations
Clean renewable solar energy is and will continue to be a critically important source of electrical energy. Solar energy has the potential of meeting all of the world's energy needs, and has seen substantial growth in recent years. Solar cells can convert sun light directly into electrical energy, and much progress has been made in making them less expensive and more efficient. Solar cells are often characterized and modeled at 25 °C, which is significantly lower than their peak operating temperature. In some thermal concentrating systems, solar cells operate above 300 °C. Since increasing the temperature drastically affects the terminal …
Synthesis And Characterization Of Iron Pyrite Nanocrystals For Photovoltaic Devices, Scott Curtis Mangham
Synthesis And Characterization Of Iron Pyrite Nanocrystals For Photovoltaic Devices, Scott Curtis Mangham
Graduate Theses and Dissertations
Iron pyrite nanocrystals have been synthesized using a hot-injection method with a variety of amines and characterized with properties necessary for photovoltaic devices. The iron pyrite nanocrystals were characterized using X-ray diffraction, scanning electron microscopy, transmission electron microscopy, optical absorption, micro-Raman, and micro-Photoluminescence. The optical absorbance spectra showed the large absorption in the visible and near infrared spectral range for the nanocrystals as well as to show the band gap. The face-centered cubic crystal structure of the iron pyrite nanocrystals was shown by matching the measured X-ray diffraction pattern to a face-centered cubic iron pyrite reference pattern. Using Bragg's law …
Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal
Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal
Faculty Publications
No abstract provided.
Properties Of Peg, Ppg And Their Copolymers Influence On The Gap-Fill Characteristics Of Damascene Interconnects, Kevin Ryan
Legacy Theses & Dissertations (2009 - 2024)
A laboratory scale plating cell was built that provided reproducible bottom-up fill results for the electrochemical deposition of copper in damascene features. Several techniques used in the full wafer plating tool were incorporated into the setup to accurately control the process conditions. These techniques included but were not limited to a voltage controlled `hot-entry' step, a custom coupon holder to allow sample rotation, a secondary thief electrode and an automatic entry system. The results of qualification experiments are presented to demonstrate that precise control was realized along with repeatable partial fill plating results. The qualified setup was then used to …
Integration Of Memristors With Mems For Dynamic Displacement Control, Sergio Fabian Almeida Loya
Integration Of Memristors With Mems For Dynamic Displacement Control, Sergio Fabian Almeida Loya
Open Access Theses & Dissertations
In recent years the demand for high-speed, lower power consumption and large-capacity non-volatile memories has increased. Promisingly the memristor can be used due to its special characteristic of having memory through resistance change. The memristor behavior is not limited to digital applications but it can be used in analog application as well including: memristors in chaotic circuits, amoeba's learning, neural synaptic emulation, reprogrammable and reconfigurable circuits, and for neuromorphic computers. On the other hand Micro Electro Mechanical Systems (MEMS) are small scale structures that can interact with the physical world due to their mechanical properties. These devices are widely used …
Nanoscale Contacts Between Semiconducting Nanowires And Metallic Graphenes, Seongmin Kim, David B. Janes, Sung-Yool Choi, Sanghyun Ju
Nanoscale Contacts Between Semiconducting Nanowires And Metallic Graphenes, Seongmin Kim, David B. Janes, Sung-Yool Choi, Sanghyun Ju
Birck and NCN Publications
Metal–semiconductor (M–S) junctions are important components in many semiconductor devices, and there is growing interest in realizing high quality M–S contacts that are optically transparent. In this paper, we present our investigations into the characteristics of M–S junction in a semiconducting ZnO nanowire that was directly grown on a multilayer graphene film (MGF). The synthesized nanowires were fabricated into two-terminal devices with MGF as one contact and Al as the other contact. By comparison with devices employing Al contacts at both ends, the nanowire resistivity and specific contact resistivity of the MGF–nanowire contact can be extracted. The extracted specific contact …
Development Of Iii-V P-Mosfets With High-Kappa Gate Stack For Future Cmos Applications, Padmaja Nagaiah
Development Of Iii-V P-Mosfets With High-Kappa Gate Stack For Future Cmos Applications, Padmaja Nagaiah
Legacy Theses & Dissertations (2009 - 2024)
As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport …
Graphene-Based Post-Cmos Architecture, Sansiri Tanachutiwat
Graphene-Based Post-Cmos Architecture, Sansiri Tanachutiwat
Legacy Theses & Dissertations (2009 - 2024)
The semiconductor industry relies on CMOS technology which is nearing its scaling limitations. In order to continue the historical growth rate of the device density of digital logic chips, novel nanomaterials and nanodevices will need to be developed.
Nanoprobe I-V Characterization Of Cdte/Cds Micro And Nano-Patterned Solar Cells, Heber Prieto
Nanoprobe I-V Characterization Of Cdte/Cds Micro And Nano-Patterned Solar Cells, Heber Prieto
Open Access Theses & Dissertations
This thesis presents a novel way to characterize micro and nano patterned cadmium telluride thin film solar cells via a nano-probe system. A historical review of CdTe-based solar cells is presented first followed by review of the technology developed to produce the patterned CdTe cells. A detailed presentation is then provided on the use of a Zyvex nanoprobing system to characterize the patterned solar cells. The I-V response of micro- and nano-patterned solar cells stimulated under different e-beam conditions is presented and analyzed. Suggestions of how to improve the technique are provided. This work documents, for the first time, the …
Optical And Raman Characterization Of Ald Alumina Coated Multiwall Carbon Nanotubes And Nanoporous Gold Film, Naod Belai
Optical And Raman Characterization Of Ald Alumina Coated Multiwall Carbon Nanotubes And Nanoporous Gold Film, Naod Belai
UNLV Theses, Dissertations, Professional Papers, and Capstones
Due to their large surface to volume ratio nanostructures are inherently unstable. To insure long term stability of nano-devices, they have to be rendered inert to their environment. In this study, nanoporous gold films(NPGF) and multiwall carbon nanotubes were coated with ALD alumina of varying thicknesses. Subsequently, the plasmonic property of the former and electronic property of the latter was monitored by Transmittance and Raman Spectroscopy respectively. Transmittance spectra revealed that NPGF passivated by ALD-alumina maintains its plasmonic properties, i.e. its LSPR supporting properties remained intact. Raman spectra of ALD alumina passivated MWNTs show no coating induced changes in its …
Preparation And Characterization Of Iron Oxide And Hydroxide Based Nanomaterials, Guillermo Carbajal Franco
Preparation And Characterization Of Iron Oxide And Hydroxide Based Nanomaterials, Guillermo Carbajal Franco
Open Access Theses & Dissertations
Iron (Fe) oxides and hydroxides are common and abundant materials. They exhibit diverse crystal structures, properties and phenomena by virtue of which they find a wide range of scientific and technological applications. Controlled growth and manipulation of the specific structure and electronic behavior to meet the requirements of a given application is a challenging problem in view of many possible phases and composition of the resulting materials. The preparation method and experimental conditions will, therefore, significantly affect the properties and performance of Fe oxides and hydroxides. The goal of the project is to obtain Fe-based oxide/hydroxide catalytic materials and to …
Synthesis, Processing And Characterization Of Silicon-Based Templated Nanowires, Jae Ho Lee
Synthesis, Processing And Characterization Of Silicon-Based Templated Nanowires, Jae Ho Lee
Legacy Theses & Dissertations (2009 - 2024)
Semiconductor and metallic nanowires have attracted substantial attention due to their wide variety of applications, ranging from nanoelectronics to energy storage devices. In particular, self-assembled silicon nanowires (SiNWs) may be an attractive alternative to conventionally processed planar silicon since SiNWs can potentially function as both the switch (i.e. transistor) and local interconnect (e.g. metal silicide nanowire) to form an inherently integrated nanoelectronic system. Also, hierarchical (branched) nanowire systems hold potential for catalysts or porous electrode applications for energy applications
Energy Band Engineering Using Polarization Induced Interface Charges In Mocvd Grown Iii-Nitride Heterojunction Devices, Neeraj Tripathi
Energy Band Engineering Using Polarization Induced Interface Charges In Mocvd Grown Iii-Nitride Heterojunction Devices, Neeraj Tripathi
Legacy Theses & Dissertations (2009 - 2024)
Characteristics of III-nitride based heterojunction devices are greatly influenced by the presence of high density of polarization induced interface charges. Research undertaken in the current doctoral thesis demonstrates the effect of presence of one, three and six sheets of polarization induced charges in three different III-nitride based devices, namely in a photocathode, a high electron mobility transistor (HEMT) and a hyperspectral detector structure. Through a systematic set of experiments and theoretical modeling an in-depth study of the interaction between multiple sheets of polarization induced charges and their impact on energy band profile was undertaken. Various device designs were studied and …
Fabrication, Characterization And Simulation Of Non-Lithographic Nanostructures And Their Potential Applications, Neelanjan Bhattacharya
Fabrication, Characterization And Simulation Of Non-Lithographic Nanostructures And Their Potential Applications, Neelanjan Bhattacharya
UNLV Theses, Dissertations, Professional Papers, and Capstones
The dissertation describes the formation of porous silicon through the pores of porous alumina on a silicon substrate. Porous silicon, by itself, is inherently a non-uniform material that has non-uniform optical and electronic properties. In addition, it is also mechanically fragile material requiring careful material handling. The porous silicon fabricated through the nanosized pores of porous alumina are expected to mitigate these problems, thereby enhancing commercial viability of the device. The porous silicon as well the porous alumina have been synthesized through anodisation for various parameters and also various types of anodizing electrolytes. The porous silicon, so obtained have been …
The Applications And Limitations Of Printable Batteries, Matthew Delmanowski
The Applications And Limitations Of Printable Batteries, Matthew Delmanowski
Graphic Communication
This study focuses on the potential applications for printed batteries and how they could affect the printing industry. It also analyzes the main problems associated with manufacturing this technology and what needs to be done to overcome these issues. To find the answers to these questions, two methods of research were used. The first was through the elite and specialized interviewing of Dr. Scott Williams of Rochester Institute of Technology and Professor Nancy Cullins from Cal Poly. The second form of research was a common, yet useful, method called secondary research. This entailed looking at recent written research papers about …
A Study Of Reticle Non-Flatness Induced Image Placement Error In Extreme Ultraviolet Lithography, Sudharshanan Raghunathan
A Study Of Reticle Non-Flatness Induced Image Placement Error In Extreme Ultraviolet Lithography, Sudharshanan Raghunathan
Legacy Theses & Dissertations (2009 - 2024)
As the semiconductor industry continues scaling devices to smaller sizes, the need for next generation lithography technology for fabricating these small structures has always been at the forefront. Over the past few years, conventional optical lithography technology which has adopted a series of resolution enhancement techniques to support the scaling needs is expected to run out of steam in the near future. Extreme Ultra Violet lithography (EUVL) is being actively pursued by the semiconductor industry as one of the most promising next generation lithographic technologies. Most of the issues unique to EUVL arise from the use of 13.5 nm light …
Nano-Scaled Fet Device For Cmos Technology, Prabhat Ranjan Pathak
Nano-Scaled Fet Device For Cmos Technology, Prabhat Ranjan Pathak
Dissertations
In this work the 3-D structure of the Accumulation mode (ACM) and Enhance mode (ECM) FinFET was developed by the Taurus-Device Editor. The design of both ACM and ECM FinFET was optimized for high-performance IC applications to meet ITRS specification for Ioff current, for 9nm gate length. The design of ACM and ECM FinFET is optimized, analyzed and compared against each other with respect to Darin Induced Barrier Lower (DIBL), Sub-threshold Swing(SS), operation and performance characteristics with varying electrical and physical parameters Silicon thickness (Tsi), Source/Drain doping gradient (σsd), electrical channel length (Leff ), …
A Study Of Cantilever-Free Instrumentation For Nanoscale Magnetic Measurements, Bruce Adair Altemus
A Study Of Cantilever-Free Instrumentation For Nanoscale Magnetic Measurements, Bruce Adair Altemus
Legacy Theses & Dissertations (2009 - 2024)
The evolution of the Atomic Force Microscope (AFM) into the Magnetic Force Microscope (MFM) and Magnetic Resonance Force Microscope (MRFM) has had a substantial impact on the characterization of nanoscale phenomena. Detection of 10-17 Newtons per root Hertz has occurred with use of an ultra-sensitive cantilever along with optical interferometry methods within these geometries. The sensitivity of these platforms is dependent on the characteristics of the cantilever, where increased length and a low Young's modulus increase the force sensitivity (meters/Newtons). Using IC fabrication techniques, the realization of generating cantilevers with this sensitivity is feasible, but stress compensation layers are required …