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Articles 1 - 8 of 8
Full-Text Articles in Other Materials Science and Engineering
Fast-, Light-Cured Scintillating Plastic For 3d-Printing Applications, Brian G. Frandsen, Michael Febbraro, Thomas Ruland, Theodore W. Stephens, Paul A. Hausladen, Juan J. Manfredi, James E. Bevins
Fast-, Light-Cured Scintillating Plastic For 3d-Printing Applications, Brian G. Frandsen, Michael Febbraro, Thomas Ruland, Theodore W. Stephens, Paul A. Hausladen, Juan J. Manfredi, James E. Bevins
Faculty Publications
Additive manufacturing techniques enable a wide range of possibilities for novel radiation detectors spanning simple to highly complex geometries, multi-material composites, and metamaterials that are either impossible or cost prohibitive to produce using conventional methods. The present work identifies a set of promising formulations of photocurable scintillator resins capable of neutron-gamma pulse shape discrimination (PSD) to support the additive manufacturing of fast neutron detectors. The development of these resins utilizes a step-by-step, trial-and-error approach to identify different monomer and cross-linker combinations that meet the requirements for 3D printing followed by a 2-level factorial parameter study to optimize the radiation detection …
Applications Of High Throughput (Combinatorial) Methodologies To Electronic, Magnetic, Optical, And Energy-Related Materials, Martin L. Green, Ichiro Takeuchi, Jason R. Hattrick-Simpers
Applications Of High Throughput (Combinatorial) Methodologies To Electronic, Magnetic, Optical, And Energy-Related Materials, Martin L. Green, Ichiro Takeuchi, Jason R. Hattrick-Simpers
Faculty Publications
High throughput (combinatorial) materials science methodology is a relatively new research paradigm that offers the promise of rapid and efficient materials screening, optimization, and discovery. The paradigm started in the pharmaceutical industry but was rapidly adopted to accelerate materials research in a wide variety of areas. High throughput experiments are characterized by synthesis of a “library” sample that contains the materials variation of interest (typically composition), and rapid and localized measurement schemes that result in massive data sets. Because the data are collected at the same time on the same “library” sample, they can be highly uniform with respect to …
Giant Magnetostriction In Annealed Co1-XFeX Thin-Films, Dwight Hunter, Will Osborn, Ke Wang, Nataliya Kazantseva, Jason R. Hattrick-Simpers, Richard Suchoski, Ryota Takahashi, Marcus L. Young, Apurva Mehta, Leonid A. Bendersky, Same E. Lofland, Manfred Wuttig, Ichiro Takeuchi
Giant Magnetostriction In Annealed Co1-XFeX Thin-Films, Dwight Hunter, Will Osborn, Ke Wang, Nataliya Kazantseva, Jason R. Hattrick-Simpers, Richard Suchoski, Ryota Takahashi, Marcus L. Young, Apurva Mehta, Leonid A. Bendersky, Same E. Lofland, Manfred Wuttig, Ichiro Takeuchi
Faculty Publications
Chemical and structural heterogeneity and the resulting interaction of coexisting phases can lead to extraordinary behaviours in oxides, as observed in piezoelectric materials at morphotropic phase boundaries and relaxor ferroelectrics. However, such phenomena are rare in metallic alloys. Here we show that, by tuning the presence of structural heterogeneity in textured Co1−xFex thin films, effective magnetostriction λeff as large as 260 p.p.m. can be achieved at low-saturation field of ~10 mT. Assuming λ100 is the dominant component, this number translates to an upper limit of magnetostriction ofλ100≈5λeff >1,000 p.p.m. Microstructural analyses …
Enhanced Dielectric Properties In Single Crystal-Like Bifeo3 Thin Films Grown By Flux-Mediated Epitaxy, S.-H. Lim, M. Murakami, J. H. Yang, S.-Y. Young, Jason R. Hattrick-Simpers, M. Wuttig, L. G. Salamanca-Riba, I. Takeuchi
Enhanced Dielectric Properties In Single Crystal-Like Bifeo3 Thin Films Grown By Flux-Mediated Epitaxy, S.-H. Lim, M. Murakami, J. H. Yang, S.-Y. Young, Jason R. Hattrick-Simpers, M. Wuttig, L. G. Salamanca-Riba, I. Takeuchi
Faculty Publications
We have fabricated single crystal-like BiFeO3 (BFO) thin films by flux-mediated epitaxy using pulsed laser deposition(PLD). The Bi–Cu–O flux composition and its thickness were optimized using composition spread, thickness gradient, and temperature gradient libraries. The optimized BFO thin films grown with this technique showed larger grain size of ∼2μm and higher dielectric constant in the range of 260–340 than those for standard PLD grown films. In addition, the leakage current density of the films was reduced by two orders of magnitude compared to that of standard PLD grown films.
The Microstructure And Grain Size Of Jet Electroplated Copper Films In Damascene Trench Features, Andrew Tzanavaras, Gregory Young, Stacy H. Gleixner
The Microstructure And Grain Size Of Jet Electroplated Copper Films In Damascene Trench Features, Andrew Tzanavaras, Gregory Young, Stacy H. Gleixner
Faculty Publications
The brightening additive level and dc current density of electroplating baths are two parameters that affect the gap-filling capability and the degree of impurity incorporation in electroplated copper films. Additive incorporation can inhibit grain growth during the room temperature recrystallization process and therefore affect the final grain size. This investigation explores the grain size and microstructure of dc jet-electroplated copper films in 0.35 and 0.50μm Damascene trenches as a function of current density and brightening additive level after first receiving a high-temperature anneal. Unlike a previous study that explored these variables in blanket Cu films [ J. Electrochem. Soc. , …
The Grain Size And Microstructure Of Jet-Electroplated Damascene Copper Films, Stacy H. Gleixner, Andrew Tzanavaras, Gregory Young
The Grain Size And Microstructure Of Jet-Electroplated Damascene Copper Films, Stacy H. Gleixner, Andrew Tzanavaras, Gregory Young
Faculty Publications
Electroplated damascene copper is rapidly replacing aluminum-copper alloys for on-chip interconnect metallization in advanced ultralarge scale integrated (ULSI) semiconductor devices. In addition to a high degree of (111) crystallographic texture, large defect-free grains are desired to enhance the performance and reliability of copper interconnects in such devices. The brightening additive level and dc current density of electroplating baths are two parameters that affect the process gap-filling capability and the degree of additive incorporation in these copper films. Additive incorporation can inhibit grain growth during the room-temperature recrystallization process and therefore affect the final grain size in electroplated copper films. This …
Exploration Of Artificial Multiferroic Thin-Film Heterostructures Using Composition Spreads, K.-S. Chang, M. A. Aronova, C.-L. Lin, M. Murakami, M.-H. Yu, Jason R. Hattrick-Simpers, O. O. Famodu, S. Y. Lee, R. Ramesh, M. Wuttig, I. Takeuchi, C. Gao, L. A. Bendersky
Exploration Of Artificial Multiferroic Thin-Film Heterostructures Using Composition Spreads, K.-S. Chang, M. A. Aronova, C.-L. Lin, M. Murakami, M.-H. Yu, Jason R. Hattrick-Simpers, O. O. Famodu, S. Y. Lee, R. Ramesh, M. Wuttig, I. Takeuchi, C. Gao, L. A. Bendersky
Faculty Publications
We have fabricated a series of composition spreads consisting of ferroelectric BaTiO3 and piezomagnetic CoFe2O4 layers of varying thicknesses modulated at nanometer level in order to explore artificial magnetoelectricthin-film heterostructures. Scanning microwavemicroscopy and scanning superconducting quantum interference device microscopy were used to map the dielectric and magnetic properties as a function of continuously changing average composition across the spreads, respectively. Compositions in the middle of the spreads were found to exhibit ferromagnetism while displaying a dielectric constant as high as ≈120.
Derivation Of An Analytical Model To Calculate Junction Depth In Hgcdte Photodiodes, Stacy H. Gleixner, H. G. Robinson, C. R. Helms
Derivation Of An Analytical Model To Calculate Junction Depth In Hgcdte Photodiodes, Stacy H. Gleixner, H. G. Robinson, C. R. Helms
Faculty Publications
Presents an enhanced analytical model to calculate junction depth and Hg interstitial profile during n-on-p junction formation in HgCdTe photodiodes. Detailed information on the enhanced model; Function of the model; Information on HgCdTe; Detailed information on how the model was obtained.