Materials Science and Engineering Commons^™

Low Pressure Chemical Vapor Deposition Of Silicon Nitride Films From Ditertiarybutylsilane, Xiangqun Fan

Theses

In this study amorphous stoichiometric silicon nitride films were synthesized by low pressure chemical vapor deposition (LPCVD) using DTBS (ditertiarybutylsilane) and ammonia (NH₃). The growth kinetics were determined as a function of temperature in the range of 600-900 00, pressure in the range of 0.2-1.1 Torr, DTBS flow rate in the range of 10-50 sccm, and NH₃/DTBS flow ratio in the range of 5-20. At constant condition of pressure (0.5 Torr), DTBS flow rate (10sccm) and NH₃ flow rate (100 sccm), the deposition rate of as-deposited silicon nitride films was found to follow an Arrehnius …

Processing, Structural And Electrical Properties Of Sic, Mark Farhad-Garousi

Theses

Cubic silicon carbide films grown by chemical vapor deposition (CVD) on silicon substrates typically have n-type conductivity at 300 °K dominated by a heavily compensated donor with a binding energy in the < 20 meV range. Binding energies <20 meV are not expected in SiC for isolated donors because the shallowest expected binding energy for an electron bound to an isolated donor is approximately 47 meV. The work done on this topic by a few group of scientists has been studied.

Laser Treatment Of Ceramic Coatings On Defective Ceramic Glazed Tile, Gousinn Yu

Theses

Laser surface melting treatment was achieved by a 2 Kw CO2 surgical laser system.The partially defocused laser beam provided a circular spot with an annular energy distribution on the sample.

It is certain that laser surface treatment will do the job of repairing in defective ceramic tiles. All glazes provided by American Standard were tested for an ability of withstand laser treatment when coated on to a glazed tile. In order to repair the defective ceramic tile it is necessary to patch the damaged region with a cement. The cement must then be glazed in order to match that of …

Laser Ablation Of Silicon Surfaces : The Effects Of A Low Level Background Light, Taposh Kumar Gayen

Theses

The performance of high speed optoelectronic and microelectronic devices largely depends on the uniqueness and development of the fabrication technology. Laser ablation has proven to be an effective three dimensional surface patterning technology. In this thesis, we present findings on the patterning of semiconductor surfaces using laser ablation in air as well as in solutions.

In this thesis, we suggest that the depth of a pattern induced on silicon by firing a pulsed excimer laser in air varies almost linearly with the number of pulses. We report that a He-Ne laser as a background light source has virtually little or …

Synthesis And Characterization Of Silicon Nitride Films Deposited By Plasma Enhanced Chemical Vapor Deposition Using Diethylsilane, Yanyao Yu

Theses

Silicon nitride thin films were deposited on silicon substrates using Diethylsilane (DES) and ammonia by Plasma Enhanced Chemical Vapor Deposition (PECVD) over a temperature range of 100 - 300°C, a pressure range of 0.2 - 0.6 torr, and a ratio of NH₃/DES was varied from 6 - 26. The R.F. power and frequency were kept at 0.15 watts/cm^{2 and 100 KHz respectively. DES flow rate was set at 15 sccm for all experiments in this study. One set of experiments were performed at different values of one parameter while the other parameters were kept constant.}

The deposition …

Synthesis And Characterization Of Lpcvd Boron Nitride Films For X-Ray Lithography, Wen-Pin Kuo

Theses

Boron nitride thin films were deposited on silicon and fused quartz substrates using ammonia and the liquid precursor borane-triethylamine complex (TEAB) by low pressure chemical vapor deposition over a temperature range of 300-850°C, a pressure range of 0.21-0.6 torr, and an ammonia flow rate range of 0-740 sccm. An increased in the nitrogen content in the film due to the addition of ammonia flow resulted in a pronounced improvement in the optical transmission, an increase in the film uniformity and a decrease in the depletion effect. IR spectra of the films showed an asymmetrical wide band centered around 1400 cm …