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Articles 541 - 570 of 792

Full-Text Articles in Materials Science and Engineering

Zinc Oxide Nanorod Based Ultraviolet Detectors With Wheatstone Bridge Design, Arun Vasudevan Dec 2013

Zinc Oxide Nanorod Based Ultraviolet Detectors With Wheatstone Bridge Design, Arun Vasudevan

Graduate Theses and Dissertations

This research work, for the first time, investigated metal semiconductor-metal (MSM) zine oxide (ZnO) nanorod based ultra-violet (UV) detectors having a Wheatstone bridge design with a high

responsivity at room temperature and above, as well as a responsivity that was largely independent of the change in ambient conditions. The ZnO nanorods which acted as the sensing element of the detector were grown by a chemical growth technique. Studies were conducted to determine the effects on ZnO nanorod properties by varying the concentration of the chemicals used for the rod growth. These studies showed how the rod diameter and the deposition …


Silver Oxide-Graphene Sensor For Hydrogen Peroxide, Austin D. Scherbarth, L Stanciu Oct 2013

Silver Oxide-Graphene Sensor For Hydrogen Peroxide, Austin D. Scherbarth, L Stanciu

The Summer Undergraduate Research Fellowship (SURF) Symposium

A nonenzymatic, amperometric sensor for Hydrogen Peroxide (H2O2) was designed by drop coating glassy carbon electrodes (GCEs) with Silver Oxide (Ag2O). Combining Ag2O with Graphene Oxide and a polymer, PEDOT, was also attempted in order to increase stability and electrochemical properties. Using metal oxides along with Graphene Oxide for sensors has been done quite a bit, but Ag2O itself has not been research extensively. So, in order to produce the best H2O2 sensor, the configuration of all components had to be optimized. Three different Ag2O …


Intermetalic Growth Rate In Transient Liquid Phase Sintering Of Pb-Free Solder Interconnects, Shuqing Zhang, John Blendell Oct 2013

Intermetalic Growth Rate In Transient Liquid Phase Sintering Of Pb-Free Solder Interconnects, Shuqing Zhang, John Blendell

The Summer Undergraduate Research Fellowship (SURF) Symposium

Following the electron devices are widely used in daily life, Pb-free solder alloy, as the replacement of Pb solder joint material, needs extensive researches to observe the properties for using and simulation purpose. Solder are used as the joint to connect two work pieces in printed wiring board of electronics. Most lead-free solders comprise tin (Sn) as the majority component, and nominally pure b-Sn is the majority phase in the microstructure of these solders. The most important thing for solder joint that researchers care about is its life cycle. Due to the incomplete of the mechanical profile of Pb-free solder …


Stanford Stratified Structure Solver (S4) Simulation Tool, Chang Liu, Xufeng Wang, Peter Bermel Oct 2013

Stanford Stratified Structure Solver (S4) Simulation Tool, Chang Liu, Xufeng Wang, Peter Bermel

The Summer Undergraduate Research Fellowship (SURF) Symposium

The Stanford Stratified Structure Solver (S4) developed in 2012 allows for fast, accurate prediction of optical propagation through complex 3D structures. However, there have been two key challenges preventing wider use to date: the use of a specialized control language, and the difficulty of incorporating realistic materials parameters. In this project, both concerns have been addressed. We have constructed a graphical user interface as an alternative, using the open-source Rappture platform on nanoHUB. This has been combined with a comprehensive materials database known as PhotonicsDB, which incorporates materials optical data drawn from carefully vetted sources. An Octave script file was …


Assessing The Mvs Model For Nanotransistors, Siyang Liu, Xingshu Sun, Mark S. Lundstrom Oct 2013

Assessing The Mvs Model For Nanotransistors, Siyang Liu, Xingshu Sun, Mark S. Lundstrom

The Summer Undergraduate Research Fellowship (SURF) Symposium

A simple semi-empirical compact MOSFET model has been developed, which is called MIT virtual source (MVS) model. Compare to other model used in industry, MVS model requires only a few parameters, most of which can be directly obtained from experiment, and produce accurate results. One aim of this paper is to test the applicability of the MVS model to transistor made from MoS2 rather than silicon. Another target is to determine the sustainability of the MVS model under different transistor tests. To achieve these goals, the MVS model will be used to fit the experimental data on MoS2 …


Fabrication And Characterization Of A Palladium/Porous Silicon Layer, Nicholas Hong Lui Sep 2013

Fabrication And Characterization Of A Palladium/Porous Silicon Layer, Nicholas Hong Lui

Master's Theses

When porous silicon is plated with a catalytic metal, the two materials can act together as a single entity whose electrical properties are sensitive to its environment – the sensing component of an electrochemical gas sensor. Etching pores into silicon is an electrochemical process; and which type of doped silicon used is one of its key parameters. For nearly all reported porous silicon gas sensors, the silicon has been of the p-doped variety – because p-doped porous etching is better understood and the layers that result from it are more predictable – despite n-doped silicon having potentially significant benefits in …


Metal-Assisted Etching Of Silicon Molds For Electroforming, Ralu Divan, Dan Rosenthal '14, Karim Ogando, Leonidas E. Ocola, Daniel Rosenmann, Nicolaie Moldovan Sep 2013

Metal-Assisted Etching Of Silicon Molds For Electroforming, Ralu Divan, Dan Rosenthal '14, Karim Ogando, Leonidas E. Ocola, Daniel Rosenmann, Nicolaie Moldovan

Student Publications & Research

Ordered arrays of high-aspect-ratio micro/nanostructures in semiconductors stirred a huge scientific interest due to their unique one-dimensional physical morphology and the associated electrical, mechanical, chemical, optoelectronic, and thermal properties. Metal-assisted chemical etching enables fabrication of such high aspect ratio Si nanostructures with controlled diameter, shape, length, and packing density, but suffers from structure deformation and shape inconsistency due to uncontrolled migration of noble metal structures during etching. Hereby the authors prove that a Ti adhesion layer helps in stabilizing gold structures, preventing their migration on the wafer surface while not impeding the etching. Based on this finding, the authors demonstrate …


Low Volume Dispensing With High Speed Dispensers, Sunny Agarwal Aug 2013

Low Volume Dispensing With High Speed Dispensers, Sunny Agarwal

Graduate Dissertations and Theses

With the high pace of innovation in the semiconductor manufacturing industry, there has been an increasing demand for more energy efficient and environmental friendly products. This research relates to a complex process of fluid dispensing at low volumes on a printed circuit board. Currently, a more refined non-contact dispensing terminology named “Streaming” is widely used to stream out material at low volumes for various applications. The key solution is to frame a dispensing method that lends itself most closely to the requirements of a specific production process.

This study represents a detailed approach of dispensing low volumes of materials in …


The Design And Fabrication Of An Electrostatically Actuated Diaphragm With A Silicon-On-Insulator Wafer, Elizabeth L. Brooks Aug 2013

The Design And Fabrication Of An Electrostatically Actuated Diaphragm With A Silicon-On-Insulator Wafer, Elizabeth L. Brooks

Master's Theses

Electrostatically actuated silicon membranes were designed, modeled, fabricated, and characterized. The intended application was for use in a microspeaker. Fabrication issues necessitated the use of thick diaphragms with a large gap between the electrodes. The devices did not function as speakers but did show actuation with a high DC voltage. Device dimensions were chosen by examining membrane mechanics, testing the processing steps required for device fabrication, and modeling with COMSOL. Several adhesives were researched to fabricate the device sidewalls, including BCB, PMMA, and TRA-Bond F112. A method for patterning PMMA through photolithography was found using a scanning electron microscope. Masks …


Optical And Mechanical Investigation Of Inas /Gaas Quantum Dots Solar Cells And Inas Nanowires For The Application Of Photovoltaic Device, Yushuai Dai Aug 2013

Optical And Mechanical Investigation Of Inas /Gaas Quantum Dots Solar Cells And Inas Nanowires For The Application Of Photovoltaic Device, Yushuai Dai

Theses

Self-assembled quantum dots (QDs) and nanowires (NWs) are currently the subjects of extensive study due to their promising applications in optoelectronic devices. In order to enhance understanding of the short circuit current improvement in InAs/GaAs quantum dots solar cell (QDSC), the mechanisms of carrier escape by thermal activation and tunneling from InAs quantum dots (QDs) confinements in InAs/GaAs QDSCs are investigated. The fitted activation energy of electrons from temperature dependent photoluminescence (TDPL) is 114 meV. Using this fitted activation energy, calculated thermal escape time and tunneling time of electrons from the ground state of the QDs are 10-12 seconds and …


Constructing And Optimizing A Single Wafer Solar Cell Array In The Microfabrication Lab At California Polytechnic State University At San Luis Obispo, Rod Marstell Jul 2013

Constructing And Optimizing A Single Wafer Solar Cell Array In The Microfabrication Lab At California Polytechnic State University At San Luis Obispo, Rod Marstell

Master's Theses

CONSTRUCTING AND OPTIMIZING A SINGLE WAFER SOLAR CELL ARRAY IN THE MICROFABRICATION LAB AT CALIFORNIA POLYTECHNIC STATE UNIVERSITY AT SAN LUIS OBISPO

Solar cells are more and more becoming a significant source of energy in the world today. They are used to power entire buildings as well as small devices and everything in between, and are utilized all around the world. Smaller solar devices, such as hearing aid battery chargers, cost a lot of money relative to the monetary wealth in third-world countries. For this purpose, a less expensive, more efficient solar cell array should be developed.

This study contains …


Fe, Co And Ni Adatoms Adsorbed On Silicene: A Dft Study, Kent Gang '14, Siva Gangavarapu '14, Matthew Deng '14, Glenn W. "Max" Mcgee, Ron Hurlbut, Michael Lee Dao Kang, Sean Ng Peng Nam, Harman Johll, Tok Eng Soon Jul 2013

Fe, Co And Ni Adatoms Adsorbed On Silicene: A Dft Study, Kent Gang '14, Siva Gangavarapu '14, Matthew Deng '14, Glenn W. "Max" Mcgee, Ron Hurlbut, Michael Lee Dao Kang, Sean Ng Peng Nam, Harman Johll, Tok Eng Soon

Student Publications & Research

Two-dimensional materials have attracted much research attention given their intriguing properties. The latest member of this class of materials is silicene. In this work, we investigate the adsorption of Fe, Co and Ni adatoms on silicene using plane-wave density functional theory calculations within the Perdew-Burke-Ernzerhof parameterization of the generalized gradient approximation for the exchange-correlation potential. In particular, we calculate the binding energy, magnetization, and projected electronic configurations of these adatoms adsorbed at different sites on the silicene. Our calculations show that the hole site (i.e. in the centre of a hexagonal-like arrangement of Si atoms) is the most stable configuration …


The Fabrication & Characterization Of An Electrokinetic Microfluidic Pump From Su-8, A Negative Epoxy-Based Photoresist, Nash Anderson Jun 2013

The Fabrication & Characterization Of An Electrokinetic Microfluidic Pump From Su-8, A Negative Epoxy-Based Photoresist, Nash Anderson

Master's Theses

Microfluidics refers to manipulation, precise control, and behavior of fluids at the micro and nanoliter scales. It has entered the realm of science as a way to precisely measure or mix small amounts of fluid to perform highly controlled reactions. Glass and polydimethylsiloxane (PDMS) are common materials used to create microfluidic devices; however, glass is difficult to process and PDMS is relatively hydrophobic. In this study, SU-8, an epoxy based (negative) photoresist was used to create various electrokinetic microfluidic chips. SU-8 is commonly used in microelectromechanical design. Spin coating of various SU-8 formulations allows for 1 μm to 100 μm …


Fluorescence Characterization Of Quantum Dots For Use As Biomarkers, Logan M. Grimes Jun 2013

Fluorescence Characterization Of Quantum Dots For Use As Biomarkers, Logan M. Grimes

Materials Engineering

Fluorescence profiles of quantum dots (QDs) were characterized to select the ideal QDs for encapsulation in phospholipids for use as biomarkers to selectively adhere to cancer cells. QDs were synthesized and extracted 0, 30, 60, and 90 seconds after precursor compounds were mixed. These extractions were isolated by extraction time. Portions from each vial were coated in a zinc sulfide shelling procedure, leaving at least half of the QD solution unshelled. These samples were characterized over four days to monitor fluctuations in fluorescence. This was done utilizing an Ocean Optics spectrometer in conjunction with Spectra Suite software. The central wavelength, …


Scanning Tunneling Spectroscopy Under Atmospheric Conditions To Characterize A Tungsten Tip Stm System For Use With Hydrogen Desorption, Ross Gregoriev Jun 2013

Scanning Tunneling Spectroscopy Under Atmospheric Conditions To Characterize A Tungsten Tip Stm System For Use With Hydrogen Desorption, Ross Gregoriev

Materials Engineering

The electrical surface structure of (111) n-type silicon was investigated through the use of scanning tunneling spectroscopy (STS) to develop a model to determine oxide presence on a passivated silicon surface. I-V curves were obtained with a scanning tunneling microscope (STM) using a tungsten tip on various locations of passivated silicon while the passivation layer desorbed from the surface under standard atmospheric conditions. The derivative (dI/dV) of these curves then revealed the electronic structure of the surface of the sample. Through these scans, it was determined the system was operating in the same mode as a Shockley diode. The separation …


Development Of A High Precision Quantum Dot Synthysis Method Utilizing A Microfluidic Reactor And In-Line Fluorescence Cell, Harry Lafferty, Jonny Hoadley Jun 2013

Development Of A High Precision Quantum Dot Synthysis Method Utilizing A Microfluidic Reactor And In-Line Fluorescence Cell, Harry Lafferty, Jonny Hoadley

Materials Engineering

Quantum dots show great potential for use as spectral converters in solar cells, lighting applications and biological imaging. These applications require precise control of quantum dot size to maximize performance. The fluorescence profile of quantum dots in solution correlates directly with particle size. An alternative, high precision process was developed for the synthesis of cadmium-selenide quantum dots using a microfluidic reactor and fluorescence flow through cell. The process required creating separate cadmium and selenium precursors that were then mixed in a nitrogen environment at 17± 1°C. Using an NE-300® syringe pump, the solution was pumped through a microfluidic reactor …


Characterization And Modeling Of An O-Band 1310 Nm Sampled-Grating Distributed Bragg Reflector (Sg-Dbr) Laser For Optical Coherence Tomography (Oct) Applications, Desmond Charles Talkington Jun 2013

Characterization And Modeling Of An O-Band 1310 Nm Sampled-Grating Distributed Bragg Reflector (Sg-Dbr) Laser For Optical Coherence Tomography (Oct) Applications, Desmond Charles Talkington

Master's Theses

In this project, the performance aspects of a new early generation 1310 nm Sampled-Grating Distributed Bragg Reflector (SG-DBR) semiconductor laser are investigated. SG-DBR lasers are ideal for Source Swept Optical Coherence Tomography (SS-OCT), a Fourier-Domain based approach for OCT, necessitating a tunable wavelength source. Three internal sections control the frequency output for tuning, along with two amplifiers for amplitude control. These O-band SG-DBR devices are now being produced in research quantities. SG-DBR lasers have been produced at 1550 and 1600 nm for some times. Fundamental questions regarding the performance of the 1310 nm devices must be quantified. Standard metrics including …


Design And Implementation Of A Micro Force Displacement System, Evan Cate Jun 2013

Design And Implementation Of A Micro Force Displacement System, Evan Cate

Materials Engineering

The design and implementation of a micro-force displacement system was completed to test various Micro-Electro-Mechanical Systems (MEMS) devices including silicon diaphragms and cantilevers. The system utilizes a World Precision Instruments Fort 10g force transducer attached to a World Precession Instruments TBM4M amplifier. A Keithley 2400 source meter provided data acquisition of the force component of the system. A micro prober tip was utilized as the testing probe attached to the force transducer with a tip radius of 5um. The displacement of samples was measured using a Newport M433 linear stage driven by a Newport ESP300 motion controller (force readings at …


Application Of Quantum Dots Onto Glass Wafers As A Feasibility Test For The Spectral Down Conversion Of Uv Light For Solar Cells, Anthony Fong Jun 2013

Application Of Quantum Dots Onto Glass Wafers As A Feasibility Test For The Spectral Down Conversion Of Uv Light For Solar Cells, Anthony Fong

Materials Engineering

Quantum dots have the ability to convert high energy photons into multiple lower energy photons. Down conversion of such high energy photons from sources such as UV light can be beneficial for applications on solar cells which waste much of the energy in the form of thermalization. To test this theory, a solar cell was hooked up to an Amprobe Solar Analyzer and tests were run to compare power output with and without the presence of quantum dots. Additionally, quantum dots were spin coated onto a glass wafer to determine its adhesion ability. Spectrometer readings were taken of the wafer …


Strategic Electronic Property Control Of Self-Assembling Pyrazine-Acenes, Lacie Brownell May 2013

Strategic Electronic Property Control Of Self-Assembling Pyrazine-Acenes, Lacie Brownell

UNLV Theses, Dissertations, Professional Papers, and Capstones

Control of electronic properties in organic semiconductor materials is essential for electro-optical applications such as field-effect transistors, light-emitting diodes, and photovoltaic devices. This work is focused on two systems that highlight different approaches for the manipulation of electronic properties: (I) the development of electron-deficient (n-type) materials by selective lowering of ELUMO and (II) low energy gap materials by controlling both ELUMO and EHOMO

To specifically lower ELUMO, a pyrazine-acene π-platform was extended using electron-withdrawing moieties. These include: pyridine, pyrazine, and benzothiadiazole (system I). From the base pyrazine-acene, the most significant change in ELUMO of …


Iii-V Bismide Optoelectronic Devices, Dongsheng Fan May 2013

Iii-V Bismide Optoelectronic Devices, Dongsheng Fan

Graduate Theses and Dissertations

This dissertation explores modeling, molecular beam epitaxy growth, and fabrication of III-V bismide optoelectronic devices, which are of great importance in modern applications of telecommunication, gas sensing, environment monitoring, etc. In the current room-temperature continuous-wave operational GaSb-based type-I InGaAsSb/AlGaInAsSb quantum well laser diodes in 3-4 um mid-wavelength range, the lasing wavelength and performance of the devices are limited due to the lack of hole confinement in the active regions. In this dissertation, a novel GaSb-based GaInAsSbBi material is proposed to replace the conventional InGaAsSb material in the quantum well region, which enables the laser diodes achieve up to 4 µm …


Device Characterization And Compact Modeling Of The Sige Hbt In Extreme Temperature Environments, Beth Olivia Woods May 2013

Device Characterization And Compact Modeling Of The Sige Hbt In Extreme Temperature Environments, Beth Olivia Woods

Graduate Theses and Dissertations

The silicon germanium heterojunction bipolar transistor, SiGe HBT, has very high frequency response but limited voltage range. Commercial communication applications in wireless and system integration have driven the development of the SiGe HBT. However, the device's excellent electrical performance goes beyond the commercial environment. The SiGe HBT performs exceptionally at low temperatures. The device DC current gain and AC small-signal gain significantly increase in the cryogenic temperature range. Applications at low temperatures with expansive temperature range specifications need an HBT compact model to accurately represent the device's performance.

In this work, a compact model referenced at 300K was developed to …


Reversible Mn Segregation At The Polar Surface Of Lithium Tetraborate, Christina L. Dugan, Robert L. Hengehold, Stephen R. Mchale, Juan A. Colon Santana, John W. Mcclory, Volodymyr T. Adamiv, Yaroslav V. Burak, Ya B. Losovyj, Peter A. Dowben Apr 2013

Reversible Mn Segregation At The Polar Surface Of Lithium Tetraborate, Christina L. Dugan, Robert L. Hengehold, Stephen R. Mchale, Juan A. Colon Santana, John W. Mcclory, Volodymyr T. Adamiv, Yaroslav V. Burak, Ya B. Losovyj, Peter A. Dowben

Faculty Publications

We find Mn surface segregation for single crystals of Mn doped Li2B4O7, nominally Li1.95Mn0.05B4O7(001), but as the temperature increases, evidence of this Mn surface segregation diminishes significantly. At room temperature, the surface photovoltaic charging is significant for this pyroelectric material but is quenched at a temperature well below that seen for the undoped Li2B4O7 samples. The suppression of surface charging in the region of 120 °C that accompanies the temperature of Mn dissolution in the bulk of Li2B4 …


Dc, Rf, And Thermal Characterization Of High Electric Field Induced Degradation Mechanisms In Gan-On-Si High Electron Mobility Transistors, Matthew Anthony Bloom Mar 2013

Dc, Rf, And Thermal Characterization Of High Electric Field Induced Degradation Mechanisms In Gan-On-Si High Electron Mobility Transistors, Matthew Anthony Bloom

Master's Theses

Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are becoming increasingly popular in power amplifier systems as an alternative to bulkier vacuum tube technologies. GaN offers advantages over other III-V semiconductor heterostructures such as a large bandgap energy, a low dielectric constant, and a high critical breakdown field. The aforementioned qualities make GaN a prime candidate for high-power and radiation-hardened applications using a smaller form-factor. Several different types of semiconductor substrates have been considered for their thermal properties and cost-effectiveness, and Silicon (Si) has been of increasing interest due to a balance between both factors.

In this thesis, the DC, …


Sodium Carbonate Catalyzed Photoelectrochemical Water Splitting Over Tio2 Nanotubes Photoanode, De-Sheng Kong, Jing Wang, Xue-Di Zhang, Xi Zhao, Chao Wang, Yuan-Yuan Feng, Wen-Juan Li Feb 2013

Sodium Carbonate Catalyzed Photoelectrochemical Water Splitting Over Tio2 Nanotubes Photoanode, De-Sheng Kong, Jing Wang, Xue-Di Zhang, Xi Zhao, Chao Wang, Yuan-Yuan Feng, Wen-Juan Li

Journal of Electrochemistry

Surface recombination of the photogenerated electron-hole pairs at semiconductor/electrolyte interface is one of the most essential reasons responsible for lowering photoconversion efficiency (Φ) of light to chemical energy for photoelectrochemical (PEC) water splitting reaction. In this paper, the catalytic effect of sodium carbonate on the oxygen evolution reaction (OER) over TiO2 nanotubes photoanode during PEC water splitting was investigated by performing photocurrent and ac impedance measurements. It was demonstrated that the addiction of 1 mmol•L-1 Na2CO3 in 0.5 mol•L-1 NaClO4 electrolyte can effectively improve the charge transfer properties for the photogenerated holes across …


Extending Device Performance In Photonic Devices Using Piezoelectric Properties, Gregory Edward Triplett Jan 2013

Extending Device Performance In Photonic Devices Using Piezoelectric Properties, Gregory Edward Triplett

Electrical and Computer Engineering Publications

This study focuses on the influence of epi-layer strain and piezoelectric effects in asymmetric GaInAs/GaAlAs action regions that potentially lead to intra-cavity frequency mixing. The theoretical limits for conduction and valence band offsets in lattice-matched semiconductor structures have resulted in the deployment of non-traditional approaches such as strain compensation to extend wavelength in intersubband devices, where strain limits are related to misfit dislocation generation. Strain and piezoelectric effects have been studied and verified using select photonic device designs. Metrics under this effort also included dipole strength, oscillator strength, and offset of energy transitions, which are strongly correlated with induced piezoelectric …


Pseudomorphic Growth Of Inas On Misoriented Gaas For Extending Quantum Cascade Laser Wavelength, Gregory Edward Triplett, Charles Meyer, Emily Cheng, Justin Grayer, David Mueller, Denzil Roberts, Samuel Graham Jan 2013

Pseudomorphic Growth Of Inas On Misoriented Gaas For Extending Quantum Cascade Laser Wavelength, Gregory Edward Triplett, Charles Meyer, Emily Cheng, Justin Grayer, David Mueller, Denzil Roberts, Samuel Graham

Electrical and Computer Engineering Publications

The authors have studied the impact of epilayer strain on the deposition of InAs/GaAs on (100) and (111)B with 2 degrees offset toward 2-1-1 surfaces. Consequences of a 7% lattice mismatch between these orientations in the form of three-dimensional growth are less apparent for (111)B with 2 degrees offset toward 2-1-1 surfaces compared to (100). By exploring a range of molecular beam epitaxy process parameters for InAs/GaAs growth and utilizing scanning electron microscopy, atomic force microscopy, and Raman spectroscopy to evaluate the quality of these strained layers, the authors develop empirical models that describe the influence of the process conditions …


Surface Plasmons For Enhanced Metal-Semiconductor-Metal Photodetectors, Ayman A. Karar Jan 2013

Surface Plasmons For Enhanced Metal-Semiconductor-Metal Photodetectors, Ayman A. Karar

Theses: Doctorates and Masters

Surface Plasmon Polaritons (SPPs) are quantized charge density oscillations that occur when a photon couples to the free electron gas of the metal at the interface between a metal and a dielectric. The extraordinary properties of SPP allow for sub-diffraction limit waveguiding and localized field enhancement. The emerging field of surface plasmonics has applied SPP coupling to a number of new and interesting applications, such as: Surface Enhanced Raman Spectroscopy (SERS), super lenses, nano-scale optical circuits, optical filters and SPP enhanced photodetectors. In the past decade, there have been several experimental and theoretical research and development activities which reported on …


The Effect Of Gamma Radiation On Fibre Bragg Grating Sensors When Used As Radiation Dosimeters, Des Baccini Jan 2013

The Effect Of Gamma Radiation On Fibre Bragg Grating Sensors When Used As Radiation Dosimeters, Des Baccini

Theses : Honours

The effects of Gamma Radiation on Fibre Bragg Gratings (FBGs), when used as a radiation dosimeter, was proposed. The focus of this study centred on the FBG performance, and in particular the Bragg Wavelength Shift (BWS) whilst being exposed to ionizing radiation. Current research suggests that certain types of fibres manufactured by varying methods produce different results. The different responses to exposure from gamma irradiation between Germanium (Ge) doped optical fibres, with and without Hydrogen loading, along with the standard SMF-28 fibre with Hydrogen, were used and results noted and compared to previous work. The FBG’s in each fibre were …


Copper Indium Diselenide Nanowire Arrays In Alumina Membranes Deposited On Molybdenum And Other Back Contact Substrates, Bhavananda R. Nadimpally Jan 2013

Copper Indium Diselenide Nanowire Arrays In Alumina Membranes Deposited On Molybdenum And Other Back Contact Substrates, Bhavananda R. Nadimpally

Theses and Dissertations--Electrical and Computer Engineering

Heterojunctions of CuInSe2 (CIS) nanowires with cadmium sulfide (CdS) were fabricated demonstrating for the first time, vertically aligned nanowires of CIS in the conventional Mo/CIS/CdS stack. These devices were studied for their material and electrical characteristics to provide a better understanding of the transport phenomena governing the operation of heterojunctions involving CIS nanowires. Removal of several key bottlenecks was crucial in achieving this. For example, it was found that to fabricate alumina membranes on molybdenum substrates, a thin interlayer of tungsten had to be inserted. A qualitative model was proposed to explain the difficulty in fabricating anodized aluminum oxide …