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Full-Text Articles in Materials Science and Engineering

The Electrochemical Reduction Of 2-Ethylanthraquinone (2eaq), Yaobin Zhu May 1995

The Electrochemical Reduction Of 2-Ethylanthraquinone (2eaq), Yaobin Zhu

Journal of Electrochemistry

The process of electrochemical reduction of 2EAQ in DMSO is studied using CVand ESR methods in this work, Pt, Pd and some implanted materials are used as electrodes. The quasi-rever-sible property of two electron transfer steps and their following homogeneous chemical reactions are illustrated. The mechanism of the electrochemical red uction of 2EAQ and the kinetic parameters of the related steps are obtained. Having measured the influence of water content in the system, the effect of the proton donor is discussed. After comparising the experimental results with each other these experiments gives us the idea that the replacement of metal …

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The Reduction Of Oxygen To Hydrogen Peroxide At The Poly(O-Phenylenediamine)-Filmed Electrode, Zhaoe Lu, Tiangeng Zhong, Guanyong Zhang May 1995

The Reduction Of Oxygen To Hydrogen Peroxide At The Poly(O-Phenylenediamine)-Filmed Electrode, Zhaoe Lu, Tiangeng Zhong, Guanyong Zhang

Journal of Electrochemistry

The poly(o-phenylenediamine) (PPD) filmed graphite electrode was formed by electro-polymerization of o-phenylenediamine in acidified (pH=1) 0.2 mol·L-1 Na2SO4 solution using the cyclic voltammetric methed. The catalytic effect of the electrcareduction of oxygen in acid olution was demonstrated by the voltammogram of the electrode in the oxygen saturated acid solutionof Na2SO4. The current efficiency of the reduction of oxygen to hydrogen peroxide was determined by the electrolysis in a divided cell under the condition of constant current. The various effectsinfluencing the accmulation of H2O2 in the catholyte were discussed.

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Studies On Coordination Behavior Of Dimethyl Sulfoxide In Complex Of Rare Earth With Cryptand, Shichang Liu, Tianpei Zhu May 1995

Studies On Coordination Behavior Of Dimethyl Sulfoxide In Complex Of Rare Earth With Cryptand, Shichang Liu, Tianpei Zhu

Journal of Electrochemistry

Electrochemical reduction reaction in the course of the titration of Eu(2.2.2) and Eu(2.2) using strong bonding solvent, DMSO, in C2H4Cl2 has been investigated by cyclic voltammetry. The greater the concentration of strong bonding solvent, the more negative the half-wave potentials for the reduction reaction are. The coordination number of Eu(2.2.2) and Eu(2.2) which are 2 and 3 respectively, with DMSO can be calculated, according to the relations between half-wave potentials and the variety of concentration of DMSO.

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A Photoelectrochemical Investigation Of Zirconium Oxide Film, Maizhi Yang, Ping Wei, Di Quarto F., Piazza S., Sunseri C. Feb 1995

A Photoelectrochemical Investigation Of Zirconium Oxide Film, Maizhi Yang, Ping Wei, Di Quarto F., Piazza S., Sunseri C.

Journal of Electrochemistry

A photoelectrochemical investigation has been carried out on zirconium initialoxide film and its oxide film grownanodically at constant rate up to different thickness. Both anodicand cathedic photocurrents on the photocurrent spectrum depended on the potential, but had littlerelation with the forming anedic films or measuring solutions. Photocurrent spectrum and photocurrenttransients suggested that the oxide films on zirconium were duplex layers structure. The internal layerwas ZrO2 and the external layer ZrO2·(H2O)n. The photocurrent included photogenerated carrier ininternal and external oxide films, as well as internal photoinjection process for electrons from thesubstrate metal into the …

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Synthesis Of LiXCoo2 And Its Behaviour In Rechargeable Lithium Battery, Mingfeng Guo, Ruimin Yang, Zebo Zhang, Jincao Ye Feb 1995

Synthesis Of LiXCoo2 And Its Behaviour In Rechargeable Lithium Battery, Mingfeng Guo, Ruimin Yang, Zebo Zhang, Jincao Ye

Journal of Electrochemistry

The Variations of crystal lattice parameters of LixCoO2 during charge anddischarge have been st ud ied by XRD and AAR spectroscopy. It was found that the LixCoO2 crystalvolume expanded during charge and contracted during discharge. The crystal lattice structure was broken because of the formation of Co3O4 when deeply charge.The variation of lattice parameter C0 value in cycling process was similar to that in charge process.The variation of 006 peak was the mostsensitive in every case. In case of preheating for 20 hours at 700℃ before operating high temperature, the …

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Electroreduction Of The Nittobenzene On Titanium Electrode Implanted With Palladium, Zhongda Wu, Xianjun Zhu, Hongsen Wang Feb 1995

Electroreduction Of The Nittobenzene On Titanium Electrode Implanted With Palladium, Zhongda Wu, Xianjun Zhu, Hongsen Wang

Journal of Electrochemistry

The titanium substrates were bombarded with 1×1017～5×1017 ions·cm-2 ofpalladium at the room temperature. The surface composition of implanted electrode and concentration-depth profiles of various elements were measured by AES. The electrored uction processes ofnitrobenzene (NB) in 0.1 mol/L NaOH solution at Pd/Ti electrodes have been investigated by cyclicvoltaivimetry. The results show that the palladium implanted titanium electrodes exhibit a high catalyticactivity in the electroreduction of NB. The NB radical anion, which is the product of one-electronelectroreduction of NB, was detected by ESR in-situ in conjunction with electrochemical methods. Aniline was also detected as a product of …

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Electroreduction Of Holmium Ion On Iron Electrde In Molten Cholorides, Qiqin Yang, Guankun Liu, Yuzhi Su Feb 1995

Electroreduction Of Holmium Ion On Iron Electrde In Molten Cholorides, Qiqin Yang, Guankun Liu, Yuzhi Su

Journal of Electrochemistry

The cyclic voltammetry, open circuit potential-time curve after poteritiostatic electrolysis, current-time curve at potential step, X-ray diffraction and electron probe microanalysiswere used to investigate the electrode process of Ho(Ⅲ) reduced on iron electrode in molten chloridesand the phases of surface alloy layer. The Ho-Fe alloys are formed at first, and then the metallic holmium is deposited when Ho(Ⅲ) is reduced on iron electrode. The charge transfer is reversible. The free energies of formation for the four inter metallic compounds of Ho-Fe system, the diffusion coefficients and diffusion activation energy of Ho in alloyed cathode are determined.

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The Study Of The Growth Processes Of The Oxides On Lead Electrodes In Sulfuric Acid Solution, Hesheng Zhai, Xuguang Chen, Jinkua You, Yong Yang, Zugeng Lin Feb 1995

The Study Of The Growth Processes Of The Oxides On Lead Electrodes In Sulfuric Acid Solution, Hesheng Zhai, Xuguang Chen, Jinkua You, Yong Yang, Zugeng Lin

Journal of Electrochemistry

The growth processes of PbO and PbO2 on lead electrodes have been investigatedby using in-situ methods that are combined with temporary AC resistance measurment technique and in-situ laser scanning photoelectrochemical microscopy. It is found that a linear relationship existsbetween the electrode resistance(R) and1/2 after the electrode is oxidized at +0.6 V(vs.Hg/H2SO4/35% H2SO4) for more than 5 min. This result suggests that the growth of PbO is well distributed during the early stage of oxidation. The study by using laser scanning photoelectrochemical microscopy has further proved this point. The results also …

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The Catalytic Behavior For Ni-W Electrode Modified By Carbon Ion Beam Implantion, Jishuang Zhang, Yaojiao Lv, Qinglian Li, Baoen Shen Feb 1995

The Catalytic Behavior For Ni-W Electrode Modified By Carbon Ion Beam Implantion, Jishuang Zhang, Yaojiao Lv, Qinglian Li, Baoen Shen

Journal of Electrochemistry

The hydrogen evolution activity in acidic and basic mediums for Ni-W electrodemodified by carbon ion bean implantation was investigated. The experimental results show thiselectrode has superior catalytic activity for the hydrogen evolution reaction than that of the unmodified Ni-electrode. Long period testing of electrolysis under high current density show that this electrode hasalonger useful life hence it is a practical electrode material. The temperature effect of electrocatalytic property was also inverstigated. The experimental regularities are explained on the basis of the formation of surface multialloys of Ni-W-WC.

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Electrocatalytic Oxidation Of Formaidehyde And Formic Acid On A Pt/SbAd Electrode, Hong Li, Lincai Jiang, Xiong Jiang Feb 1995

Electrocatalytic Oxidation Of Formaidehyde And Formic Acid On A Pt/SbAd Electrode, Hong Li, Lincai Jiang, Xiong Jiang

Journal of Electrochemistry

The electrocatalytic activity for the oxidation of formaldehyde and formic acid ona Sb-modified platinum (Pt/Sbad) was investigated. Results showed that the Pt/Sbad electrode was electrocatalytically more active than a Pt electrode in the anodic oxidation of formaldehyde and formicacid. In the case of formaldehyde, an oxidation peak appeared at a potential of ca. 0.7V. During the oxidation of formic acid, a 4-fold increase in the 1st peak current was observed. The Sb-modified platinum electrode was found to be most electrocatalytically active at a coverage of 0.75±0.05. The electrocatalytic activity of the Pt/Sbad electrode can be best …

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Compensation And Characterization Of Gallium Arsenide, Randy A. Roush Jan 1995

Compensation And Characterization Of Gallium Arsenide, Randy A. Roush

Electrical & Computer Engineering Theses & Dissertations

The properties of transition metals in gallium arsenide have been previously investigated extensively with respect to activation energies, but little effort has been made to correlate processing parameters with electronic characteristics. Diffusion of copper in gallium arsenide is of technological importance due to the development of GaAs:Cu bistable photoconductive devices. Several techniques are demonstrated in this work to develop and characterize compensated gallium arsenide wafers. The material is created by the thermal diffusion of copper into silicon-doped GaAs. Transition metals generally form deep and shallow acceptors in GaAs, and therefore compensation is possible by material processing such that the shallow …

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Diagnostics Of Cdte Electrodeposition By Rest Potential Voltammetry, Brandon Kemp, Robert Engelken, Arif Raza, Arees Siddiqui, Omer Mustafa Jan 1995

Diagnostics Of Cdte Electrodeposition By Rest Potential Voltammetry, Brandon Kemp, Robert Engelken, Arif Raza, Arees Siddiqui, Omer Mustafa

Journal of the Arkansas Academy of Science

Due to the extreme sensitivity of the partial elemental currents (i.e.,iCd, iTe) and, hence, stoichiometry to deposition voltage, temperature, mass transport, and ambient light intensity during electrodeposition of semiconductor films, it is important to implement in-situ methods for monitoring the stoichiometry and related semiconductor efficacy of the growing film. We report investigation of open circuit rest potential (Eoc) voltammetry as one such method during electrodeposition of CdTe from aprotic electrolytes such as ethylene glycol. Plots of transient open circuit potential versus sweep voltage exhibit distinct transition and plateau structures corresponding to Te, CdTe, and Cd phases and correlating with the …

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Total Ionizing Dose Effects In Mosfet Devices At 77 K, Kevin J. Daul Dec 1994

Total Ionizing Dose Effects In Mosfet Devices At 77 K, Kevin J. Daul

Theses and Dissertations

Total ionizing dose effects on thermal oxide and reoxidized nitrided oxide (RNO) MOSFET devices at 77 K were studied. The MOSFETs were immersed in liquid nitrogen and irradiated, using a 60Co source, up to 1 Mrad(Si) at a dose rate of 107 rads(Si)-sec. Drain current-gate voltage characteristics were obtained and used to determine threshold voltage and transconductance. At 77 K the subthreshold slopes indicated no observed buildup of interface states in any of the transistors. Furthermore, all transistors experienced very little change in the transconductance. Typical negative shifts in threshold voltage as dose increased were observed in all of …

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Photoluminescence Spectroscopy Of 4h- And 6h-Sic, William A. Davis Dec 1994

Photoluminescence Spectroscopy Of 4h- And 6h-Sic, William A. Davis

Theses and Dissertations

Typical undoped bulk grown SiC shows n- or p-type conductivity due to residual impurities such as nitrogen, boron, or aluminum. In order to produce high resistivity material, vanadium can be used as a compensating dopant. Since vanadium is an amphoteric dopant in SiC, it produces either a donor state, VSi4+(3d1) → VSi5+(3d0), or an acceptor state, VSi4+(3d1) → VSi3+(3d2). Thus, vanadium doping can compensate both n- and p-type conductivity. In this work, vanadium doped and undoped 4H- and 6H-SiC grown …

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Model Of A Single Impurity In A Wide Bandgap Semiconductor Describing Electric Field Screening, Anthony N. Dills Dec 1994

Model Of A Single Impurity In A Wide Bandgap Semiconductor Describing Electric Field Screening, Anthony N. Dills

Theses and Dissertations

A mathematical model of the influence on electric field screening arising from a single impurity in a wide bandgap semiconductor has been numerically investigated and compared with analytically derived solutions. The parameter set chosen to perform the comparison of analytical solution and numerical solution is based upon a bismuth silicate crystal. Both the analytical calculations and the numerical calculations are an attempt to mathematically model the internal electric field within a semiconductor. Two types of impurities were looked at: a single donor level and a single trap impurity level. In general, after an abrupt application of a voltage across the …

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Design, Fabrication, Modeling, And Optical Characterization Of Organic Polymer Nonlinear Directional Couplers, John N. Berry Dec 1994

Design, Fabrication, Modeling, And Optical Characterization Of Organic Polymer Nonlinear Directional Couplers, John N. Berry

Theses and Dissertations

This research was an investigation into the suitability of a recently developed polymer, polyphenylene, as a material for integrated optical circuits (IOCs). Polymers show great promise in the area of IOCs because of material processing advantages, compatibility with most existing integrated circuit technology, and relatively strong nonlinear optical characteristics. This thesis contains an overview of: dielectric waveguides, linear and nonlinear directional coupler theory; various models useful in the design and analysis of optical waveguides; the fabrication of three different waveguide designs; the experimental apparatus and procedure used to optically characterize the waveguides; and the experimental results of the characterization. Waveguiding …

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The Current Voltage Characteristics Of Electron Beam Controlled Thin Film Diamond Switches, Christopher Anthony Molina Oct 1994

The Current Voltage Characteristics Of Electron Beam Controlled Thin Film Diamond Switches, Christopher Anthony Molina

Electrical & Computer Engineering Theses & Dissertations

The dark current of natural diamond thin films and the induced current due to electron-beam irradiation was measured up to a range of 7000Ncm'. The contact material was aluminum, annealed and unannealed. Switching experiments were performed with electron energies ranging from 70keV to 172keV. The switching results obtained are strongly dependent on the biasing polarity, incident electron energy, and whether the contact is blocking or Ohmic in nature. A simple model which takes traps into consideration allows us to explain the various switching responses. The range of electrons which define, in part, the switch mode was measured for one sample …

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The Development Of A Method To Extract High Purity Oxygen From The Martian Atmosphere, Dongchuan Wu Jul 1994

The Development Of A Method To Extract High Purity Oxygen From The Martian Atmosphere, Dongchuan Wu

Mechanical & Aerospace Engineering Theses & Dissertations

A glow-discharge in an ambient Mars atmosphere (total pressure of 5 torr, composed of 95% carbon dioxide) results in the dissociation of carbon dioxide molecules into carbon monoxide and oxygen. If the glow-discharge zone is maintained adjacent and close to a silver membrane, operated at temperatures above 400°C, atomic and molecular oxygen, produced by the glow-discharge, can be separated from the other species by atomic diffusion through the membrane to an ultrahigh vacuum region where the desorbed O2 is then collected. Experiments have been conducted to study the behavior of the glow discharge in both molecular oxygen and carbon …

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Transient Simulations And Modelling Of Semi-Insulating Gaas Photoconductive Switches, Prasun Kumar Raha Jul 1994

Transient Simulations And Modelling Of Semi-Insulating Gaas Photoconductive Switches, Prasun Kumar Raha

Electrical & Computer Engineering Theses & Dissertations

The primary objective of this thesis is to develop a one-dimensional transient simulator for Photoconductive Semiconductor Switches (PCSS) taking into consideration the material characteristics, the internal physical effects, and the external circuit. Simulations have been performed to study the device behavior at different voltage levels for copper-doped silicon-compensated GaAs material, though other materials could easily be simulated by changing the parameters. The model includes hole transport, and the results demonstrate the effect of hole injection, with and without recombination centers. In addition to developing a one-dimensional transient simulator, the role of various physical effects, such as the field-dependence of trapping …

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Diamond Thin Film Sensors For Hypersonic Flow Studies, Bhaskar Kumar Bulusu Apr 1994

Diamond Thin Film Sensors For Hypersonic Flow Studies, Bhaskar Kumar Bulusu

Electrical & Computer Engineering Theses & Dissertations

Conventional metal film sensors can measure flow instabilities of the order of 60 kHz. The turbulence fluctuations in the hypersonic regime are of the order of 200- 400 kHz. To measure these fluctuations, sensors with an enhanced frequency response are required. Therefore, it is required to identify the parameters to enhance the frequency response. These include parameters such as the temperature sensitivity, the resistivity, the thermal conductivity, the diffusivity, specific heat capacity and the geometric size and shape of the film and the substrate. A selection of materials was then carried out to maximize the frequency response. Diamond was identified …

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Electrical Properties Of P-Type Gainp2, Roy S. Calfas Dec 1993

Electrical Properties Of P-Type Gainp2, Roy S. Calfas

Theses and Dissertations

The GaInP2 n+—p junction diode has recently become important to the development of high efficiency GaInP2GaAs dual junction solar cells, which have a demonstrated air mass 1.5 conversion efficiencies in excess of 27. In order to study the effects of long term exposure to the space environment, the GaInP2 n+—p junction diodes were irradiated with a 1 MeV electron beam with a fluence of 1016 electrons/cm2. Since little is known about deep level defects traps in GaInP2, a deep level transient spectroscopy DLTS study was made to characterize the …

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Light Injection From An Active Cladding To The Core Of A Fiber Optic Fluorosensor, Alvin Leon Bryant Jul 1993

Light Injection From An Active Cladding To The Core Of A Fiber Optic Fluorosensor, Alvin Leon Bryant

Electrical & Computer Engineering Theses & Dissertations

A fluorosensor works on the basis of light injection from the clad into the core of an optical fiber. The sensitivity of such a sensor depends on the efficiency of light injection. Conditions necessary for a high injection efficiency are experimentally determined. The refractive index difference between the core and the clad,ncore -nclad, must be maximized to achieve a high injection efficiency. Since an air clad has the least refractive index, a bare core fiber will have a maximum efficiency. Standard optical fibers used for communication employ a minimum value for ncore -nclad, in order …

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Study Of Single-Fiber Fiber Optic Lever Microphone, Trung Duc Nguyen Jul 1993

Study Of Single-Fiber Fiber Optic Lever Microphone, Trung Duc Nguyen

Electrical & Computer Engineering Theses & Dissertations

Fiber optic sensors are widely used in today's technological applications, providing many advantages that conventional sensors lack. In particular, there is a demand in hypersonic applications to develop microphones to measure acoustic pressure that performs in high temperature and noisy surroundings. This thesis analyzes fiber optic lever microphones (FOLM), since they perform at high temperatures. An FOLM system is an intensity modulated sensor, which is simple to implement and is small in size. Two models of the FOLM have been fabricated and calibrated. The first model uses a seven-element fiber array while the second uses a single-fiber to transmit and …

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Influence Of Processing Techniques On Copper Deep Levels Formation And On Photoconductivity In Silicon Doped Gallium Arsenide, Lucy M. Thomas Apr 1993

Influence Of Processing Techniques On Copper Deep Levels Formation And On Photoconductivity In Silicon Doped Gallium Arsenide, Lucy M. Thomas

Electrical & Computer Engineering Theses & Dissertations

Diffusion of copper in silicon doped gallium arsenide under different diffusion conditions is studied. Copper compensated silicon doped gallium arsenide (GaAs:Si:Cu) is used as switch material for bulk optically controlled semiconductor switch, and on-state photoconductivity of the switch is primarily due to the properties of the copper deep levels introduced in the material during diffusion. Gallium arsenide being a compound semiconductor, presence of vacancies and defects make the study of diffusion a complex process. The objective of the current research is twofold: a) to study the influence of diffusion conditions and processing techniques on copper deep level formation in silicon …

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Superheating Of Bi(0001), E. A. Murphy, H. E. Elsayed-Ali, J. W. Herman Jan 1993

Superheating Of Bi(0001), E. A. Murphy, H. E. Elsayed-Ali, J. W. Herman

Electrical & Computer Engineering Faculty Publications

Superheating of Bi(0001) by about 90 K above the bulk melting temperature is observed using time-resolved reflection high-energy electron diffraction with ∼200-ps time resolution. Larger temperature excursions above the bulk melting temperature result in melting accompanied by irreversible laser damage to the surface. The rhombohedral structure of Bi leads to very different behavior of material parameters upon melting as compared with fcc metals. Therefore, our observation of the superheating of Bi(0001), together with the previously observed superheating of Pb(111), suggests the generality of the superheating phenomenon.

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A Novel Technique For Deep Level Characterization Of High-Resistivity Semiconductor Materials, Sridhar Panigrahi Jul 1992

A Novel Technique For Deep Level Characterization Of High-Resistivity Semiconductor Materials, Sridhar Panigrahi

Electrical & Computer Engineering Theses & Dissertations

An improved photo induced current transient spectroscopy (PICTS) technique is developed for studying deep level parameters in high-resistivity semiconductor materials. A new digital data acquisition approach and improvement in the cryogenics of the system have enabled us, for the first time in our laboratory, to detect CuA level in a copper doped silicon compensated gallium arsenide (GaAs:Si:Cu) sample. The digital approach improves both the signal to noise ratio (S/N) and the efficiency of the system. Also, multiple PICTS spectra in a single thermal cycle can be obtained. In the present work, various doped and undoped gallium arsenide ( GaAs) and …

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Cathodoluminescence Of Gaas, Tyler Smith Jul 1991

Cathodoluminescence Of Gaas, Tyler Smith

Electrical & Computer Engineering Theses & Dissertations

Cathodoluminescence of band-gap radiation across the bulk of a proposed semiconductor switch has been studied. Such a device relies on the efficient use of cathodoluminescence to modulate the conductivity of the switch. Diagnostics were configured to measure the intensity of band-gap radiation across the bulk of several switch samples. The measured results were compared to calculations based on a four energy level band-gap model which included two deep levels EL2 and HL10.

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Magnetic-Field Distributions In Zinc-Nickel Ferrite, T. A. Dooling, Desmond C. Cook Apr 1991

Magnetic-Field Distributions In Zinc-Nickel Ferrite, T. A. Dooling, Desmond C. Cook

Physics Faculty Publications

The Mössbauer effect has been used to study the microscopic magnetic properties of the cubic microwave ferrite (Zn0.41Ni0.59)Fe2O4 at 300 K. The magnetically split spectrum is broad and unresolved due to the overlap of the hyperfine magnetic fields at the tetrahedral and octahedral sites. This is caused by a distribution of magnetic fields at each site. The distribution is especially large and asymmetric at the octahedral site and is due to the fact that the iron atoms at this site are influenced by the presence of both iron and zinc at the tetrahedral …

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Monte Carlo Simulation Of Millimeter-Wave Gunn Effect Oscillators, Ramani Vaidyanathan Apr 1991

Monte Carlo Simulation Of Millimeter-Wave Gunn Effect Oscillators, Ramani Vaidyanathan

Electrical & Computer Engineering Theses & Dissertations

Monte Carlo simulations have been carried out to investigate the performance of microwave Gunn oscillators. Three separate aspects of the simulation problem have been comprehensively addressed in this work. First, the presence of an external circuit has been self-consistently incorporated into the calculations. The inclusion of the external circuit facilitates a study of the circuit controlled regime, and correctly models effects arising from the time dependent boundary conditions. Secondly, microscopic details of the electronic relaxation mechanisms which ultimately control the frequency response limits, have been taken into account through an iterative Monte Carlo-Poisson scheme. This procedure overcomes a potential shortcoming …

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Q Improvement Of A 5.2 Ghz Te011 Cavity By Incorporating Y1Ba2Cu3O7-X, R. Joseph Leclear Apr 1991

Q Improvement Of A 5.2 Ghz Te011 Cavity By Incorporating Y1Ba2Cu3O7-X, R. Joseph Leclear

Electrical & Computer Engineering Theses & Dissertations

Research is undertaken to apply high temperature superconducting material to improve the quality factor (Q) of a 5.2 GHz cylindrical resonant cavity. In particular, the approach is to electrophoretically deposit polycrystalline Y1Ba2Cu3O7-x (YBCO) on the conducting surface of the cavity cylinder. Spalling of the YBCO ceramic coating due to expansion and contraction of the cavity during sintering and testing is overcome by segmenting the cylinder. Results show that the Q of the cavity is increased over that of a copper cavity at temperatures below 60 K. At 20 K, improvement exceeds a factor …

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