Materials Science and Engineering Commons^™

Influence Of Processing Techniques On Copper Deep Levels Formation And On Photoconductivity In Silicon Doped Gallium Arsenide, Lucy M. Thomas

Electrical & Computer Engineering Theses & Dissertations

Diffusion of copper in silicon doped gallium arsenide under different diffusion conditions is studied. Copper compensated silicon doped gallium arsenide (GaAs:Si:Cu) is used as switch material for bulk optically controlled semiconductor switch, and on-state photoconductivity of the switch is primarily due to the properties of the copper deep levels introduced in the material during diffusion. Gallium arsenide being a compound semiconductor, presence of vacancies and defects make the study of diffusion a complex process. The objective of the current research is twofold: a) to study the influence of diffusion conditions and processing techniques on copper deep level formation in silicon …

Superheating Of Bi(0001), E. A. Murphy, H. E. Elsayed-Ali, J. W. Herman

Electrical & Computer Engineering Faculty Publications

Superheating of Bi(0001) by about 90 K above the bulk melting temperature is observed using time-resolved reflection high-energy electron diffraction with ∼200-ps time resolution. Larger temperature excursions above the bulk melting temperature result in melting accompanied by irreversible laser damage to the surface. The rhombohedral structure of Bi leads to very different behavior of material parameters upon melting as compared with fcc metals. Therefore, our observation of the superheating of Bi(0001), together with the previously observed superheating of Pb(111), suggests the generality of the superheating phenomenon.

A Novel Technique For Deep Level Characterization Of High-Resistivity Semiconductor Materials, Sridhar Panigrahi

Electrical & Computer Engineering Theses & Dissertations

An improved photo induced current transient spectroscopy (PICTS) technique is developed for studying deep level parameters in high-resistivity semiconductor materials. A new digital data acquisition approach and improvement in the cryogenics of the system have enabled us, for the first time in our laboratory, to detect CuA level in a copper doped silicon compensated gallium arsenide (GaAs:Si:Cu) sample. The digital approach improves both the signal to noise ratio (S/N) and the efficiency of the system. Also, multiple PICTS spectra in a single thermal cycle can be obtained. In the present work, various doped and undoped gallium arsenide ( GaAs) and …

Cathodoluminescence Of Gaas, Tyler Smith

Electrical & Computer Engineering Theses & Dissertations

Cathodoluminescence of band-gap radiation across the bulk of a proposed semiconductor switch has been studied. Such a device relies on the efficient use of cathodoluminescence to modulate the conductivity of the switch. Diagnostics were configured to measure the intensity of band-gap radiation across the bulk of several switch samples. The measured results were compared to calculations based on a four energy level band-gap model which included two deep levels EL2 and HL10.

Q Improvement Of A 5.2 Ghz Te011 Cavity By Incorporating Y1Ba2Cu3O7-X, R. Joseph Leclear

Electrical & Computer Engineering Theses & Dissertations

Research is undertaken to apply high temperature superconducting material to improve the quality factor (Q) of a 5.2 GHz cylindrical resonant cavity. In particular, the approach is to electrophoretically deposit polycrystalline Y₁Ba₂Cu₃O_7-x (YBCO) on the conducting surface of the cavity cylinder. Spalling of the YBCO ceramic coating due to expansion and contraction of the cavity during sintering and testing is overcome by segmenting the cylinder. Results show that the Q of the cavity is increased over that of a copper cavity at temperatures below 60 K. At 20 K, improvement exceeds a factor …

Monte Carlo Simulation Of Millimeter-Wave Gunn Effect Oscillators, Ramani Vaidyanathan

Electrical & Computer Engineering Theses & Dissertations

Monte Carlo simulations have been carried out to investigate the performance of microwave Gunn oscillators. Three separate aspects of the simulation problem have been comprehensively addressed in this work. First, the presence of an external circuit has been self-consistently incorporated into the calculations. The inclusion of the external circuit facilitates a study of the circuit controlled regime, and correctly models effects arising from the time dependent boundary conditions. Secondly, microscopic details of the electronic relaxation mechanisms which ultimately control the frequency response limits, have been taken into account through an iterative Monte Carlo-Poisson scheme. This procedure overcomes a potential shortcoming …

Magnetic-Field Distributions In Zinc-Nickel Ferrite, T. A. Dooling, Desmond C. Cook

Physics Faculty Publications

The Mössbauer effect has been used to study the microscopic magnetic properties of the cubic microwave ferrite (Zn_0.41Ni_0.59)Fe₂O₄ at 300 K. The magnetically split spectrum is broad and unresolved due to the overlap of the hyperfine magnetic fields at the tetrahedral and octahedral sites. This is caused by a distribution of magnetic fields at each site. The distribution is especially large and asymmetric at the octahedral site and is due to the fact that the iron atoms at this site are influenced by the presence of both iron and zinc at the tetrahedral …

Phase Changes In Plasma‐Sprayed Zinc‐Nickel Ferrite, T. A. Dooling, Desmond C. Cook

Physics Faculty Publications

The magnetic and crystalline properties of a plasma‐sprayed coating of the microwave absorbing zinc‐nickel ferrite, (Zn_0.41Ni_0.59 )Fe₂O₄ have been studied at 300 K using the Mössbauer effect and x‐ray diffraction (XRD). Both techniques indicate that the plasma‐sprayed material separated into two phases. The first is a nickel‐rich phase with magnetic fields of 47.5 and 44.5 T at the tetrahedral and octahedral sites, respectively. The second is a zinc‐rich phase, zinc meta‐ferrite, having a small magnetic field of 4.2 T. The quadrupole splitting of this second phase is ΔE=0.34 mm s⁻¹, …

Angle Of Arrival Detection Through Artificial Neural Network Analysis Of Optical Fiber Intensity Patterns, Scott Thomas

Theses and Dissertations

The optical sensors of United States Air Force reconnaissance vehicles, such as satellites, are subject to temporary or permanent blinding from hostile (or threat) laser radiation. By detecting and determining the angle of arrival (AOA) of the hostile radiation, the reconnaissance vehicle may be able to protect its optical sensors by taking evasive maneuvers or by shutting down the optical sensor (such as closing a shutter) until the threat has passed. In addition, the vehicle can relay information to its ground terminal allowing the intelligence community to determine the source of the hostile laser radiation. This thesis demonstrated that an …

Optical And High Electric Field Effects In Bulk Gallium Arsenide Switches, Randy Roush

Electrical & Computer Engineering Theses & Dissertations

During the past few years, bulk, photoconductive switching has become recognized as a viable topic for future research on moderate and high power switches. The two-pulse, or BOSS, concept relies on an excitation laser pulse, and a separate de-excitation pulse in conjunction with silicon doped, copper compensated, GaAs to create a variable temporal electrical pulse width. The research contained in this document provides information concerning the feasibility of the BOSS concept, as the switch is scaled to larger sizes, and higher voltage and current. The major concern will be the high voltage and current effects. The absorption length for 1064 …

Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola

Electrical & Computer Engineering Faculty Publications

The influence of the copper concentration in silicon-doped gallium arsenide on the photoionization and photoquenching of charge carriers was studied both experimentally and theoretically. The studies indicate that the compensation ratio (N_Cu/N_Si) is an important parameter for the GaAs:Si:Cu switch systems with regard to the turn-on and turn-off performance. The optimum copper concentration for the use of GaAs:Si:Cu as an optically controlled closing and opening switch is determined.

Optical Recording Aspects Of Rf Magnetron Sputtered Iron-Garnet Films, J.P. Krumme, V. Doormann, P. Hansen, H. Baumgart, J. Petruzzello, M.P.A. Viegers

Electrical & Computer Engineering Faculty Publications

The intrinsic magneto-optical readout performance in reflection is calculated for bismuth and cobalt-substituted iron-garnet films on a multilayer interference mirror at 800-, 633-, 488-, and 420-nm wavelengths and is compared with that of a trilayer medium composed of an antireflection layer, a rare-earth transition-metal film, and a metallic mirror. It is found, when disregarding inhomogeneities, like irregular domain shape, ripple of the magnetic anisotropy, and surface roughness, that iron garnets are superior to rare-earth transition-metal films at blue to near-ultraviolet wavelengths if operated at thicknesses where optical interference occurs in the magnetic layer. Optical transmittance at these thicknesses is sufficiently …

Gaas Photoconductive Closing Switches With High Dark Resistance And Microsecond Conductivity Decay, M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, R. Germer, G. M. Loubriel, F. J. Zutavern

Electrical & Computer Engineering Faculty Publications

Silicon-doped n-type gallium arsenide crystals, compensated with diffused copper, were studied with respect to their application as photoconductive, high-power closing switches. The attractive features of GaAs:Cu switches are their high dark resistivity, their efficient activation with Nd:YAG laser radiation, and their microsecond conductivity decay time constant. In the authors' experiment, electric fields are high as 19 kV/cm were switched, and current densities of up to 10 kA/cm² were conducted through a closely compensated crystal. At field strengths greater than approximately 10 kV/cm, a voltage `lock-on' effect was observed.

Nanosecond Optical Quenching Of Photoconductivity In A Bulk Gaas Switch, M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, S. T. Ko

Electrical & Computer Engineering Faculty Publications

Persistent photoconductivity in copper-compensated, silicon-doped semi-insulating gallium arsenide with a time constant as large as 30 µs has been excited by sub-band-gap laser radiation of photon energy greater than 1 eV. This photoconductivity has been quenched on a nanosecond time scale by laser radiation of photon energy less than 1 eV. The proven ability to turn the switch conductance on and off on command, and to scale the switch to high power could make this semiconductor material the basis of an optically controlled pulsed-power closing and opening switch.

Strains In Si-Onsio2 Structures Formed By Oxygen Implantation: Raman Scattering Characterization, D.J. Olego, H. Baumgart, G.K. Celler

Electrical & Computer Engineering Faculty Publications

Low-temperature Raman scattering measurements were carried out to characterize Si-on-SiO₂ structures formed by oxygen implantation and subsequent furnace or lamp annealing. The experiments were conducted with 413.1 nm laser light to probe only the thin Si layers at the top of the structures. The Raman spectra of the furnace-annealed samples are red shifted and broadened when compared with a virgin Si surface. The shifts and broadenings decrease with increasing annealing temperatures but they are still present in samples annealed above 1250°C for 3 h. No shifts or broadenings affect the Raman peaks of the layers, which were lamp annealed …

An Optically Controlled Closing And Opening Semiconductor Switch, K. H. Schoenbach, V. K. Lakdawala, R. Germer, S. T. Ko

Electrical & Computer Engineering Faculty Publications

A concept for a bulk semiconductor switch is presented, where the conductivity is increased and reduced, respectively, through illumination with light of different wavelengths. The increase in conductivity is accomplished by electron ionization from deep centers and generation of bound holes. The reduction of conductivity is obtained by hole ionization from the excited centers and subsequent recombination of free electrons and holes. The transient behavior of electron and hole density in a high power semiconductor (GaAs:Cu) switch is computed by means of a rate equation model. Changes in conductivity by five orders of magnitude can be obtained.

Silicon-On-Insulator Technology By Crystallization On Quartz Substrates, Helmut Baumgart

Electrical & Computer Engineering Faculty Publications

The purpose of the novel zone-melting recrystallization process (ZMR) is to produce single crystalline Si films on Si02 of high crystalline perfection, which are suitable for device fabrication and subsequent industrial applications. However, silicon films grown on amorphous insulating substrates without seeding contain regularly spaced subgrain boundaries as their predominant growth defect and to a lesser degree twin boundaries and some grain boundaries. Detailed materials studies have revealed the core structure of these extended defects and the fundamental mechanisms responsible for subgrain boundary formation. The nature and origin of subgrain boundaries is reviewed and a model for polygonization of the …

Seeded Oscillatory Growth Of Si Over Sio² By Cw Laser Irradiation, G.K. Celler, L. E. Trimble, K.K. Ng, H.J. Leamy, H. Baumgart

Electrical & Computer Engineering Faculty Publications

Extensive seeded epitaxial growth of crystalline Si over SiO₂ was achieved by an oscillatory regrowth method applied to rectangular Si pads recessed into a thick SiO₂ film. Narrow (≃5 μm) via holes linked the pads with the bulk (100) Si substrate. Oriented single crystals propagated as far as 500 μm from the seeding area, following the long term advance of a scanned focused laser beam.

Silicon As A Millimeter-Wave Monolithically Integrated Substrate - A New Look, Arye Rosen, Martin Caulton, Anna M. Gombar, Walter M. Janton, Chung P. Wu, John F. Corboy, Charles W. Magee

Henry M. Rowan College of Engineering Departmental Research

Materials suitable for use as monolithic substrates are summarized. A study of the properties of silicon substrates as transmission line media shows that serious consideration should be given to them for use at mm-wave frequencies. It is concluded that for silicon resistivities of 2000 ohm-cm or greater, microstrip loss in silicon at mm-wave frequencies is only slightly higher than that in GaAs or alumina. The cross section width of a transmission line represents an appreciable part of a wavelength when microstrip is used as an impedance transformer at mm-wave frequencies. Therefore, substrate thickness (using the latest dispersion characteristics) is especially …

Slip Dislocation Formation During Continuous Wave Laser Annealing Of Silicon, Helmut Baumgart

Electrical & Computer Engineering Faculty Publications

High-voltage electron microscopy (HVEM) has been used for the investigation of the defect structure in cw laser-annealed silicon. We report for the first time a (HVEM) analysis of the formation processes involved in the nucleation and glide of slip dislocations during epitaxial regrowth by cw laser annealing of ion-implantation damaged silicon layers. Based on the combined optical and HVEM observations a model of the dislocation generation and glide processes is presented.

Ua64/3 Readout, Wku Industrial Education & Technology

WKU Administration Documents

Newsletter includes articles:

• Construction Complete on Environemental Science & Technology Building
• Wendt, Donald. Some Reflections on teh Kentucky Industrial Education Association
• Tomazic, Norman. Technology Assessment A Step Toward a Humanized Technology
• Frank Pittman has Individualized Course Published
• Lowrey, H.J. Industrial Arts in a Changing Society
• H.B. Clark
• Growing Interest, re: Architectural Drafting
• Old Building Begins Renovation
• Walter Nalbach: Craftsman at Home

A Suboptimal Control Law To Improve The Transient Stability Of Power Systems, Aditya Kumar, Earl F. Richards

Materials Science and Engineering Faculty Research & Creative Works

The application of optimal control theory to damp the electromechanical oscillations associated with the transient conditions in power systems has been given little attention. A suboptimal control law which minimizes the sum of the performance indices of the two linear systems given by a piecewise linear model of a power system improves the transient stability better than the usual "optimal" control law obtained from a linearized model. Further, the suboptimal control law presented in this paper assures stability of the system for all disturbances resulting in rotor oscillations of magnitudes less than a preselected limit. Copyright © 1976 by The …

Etch Patterns On Zone-Refined Fe, M. E. Straumonis, Chang-Soo Kim

Electrical and Computer Engineering Faculty Research & Creative Works

Upon dissolution of zone-refined Fe in strong acids, mainly three kinds of corrosion patterns were observed in the crystallites of the sections. Regardless of the acids, the {110} plane always appeared on the three patterns in the form of smooth and even steps, ledges, or facets. The {112}, {122}, and {123} planes were also developed but to a much lesser degree. The {100} and {111} planes were not observed because grains of the respective orientation were missing on the sections. Attempts were made to explain the formation of the planes by taking into consideration the reticular density of the planes …

A Study Of Thin-Film Superconducting Junctions, William P. Korink

Electrical & Computer Engineering Theses & Dissertations

The information presented in this paper is the result of research conducted toward the development. of a reproducible thin-film superconducting junction. The results of this experimentation and the equipment and procedures used are provided.

A qualitative explanation is given for the theory used in the derivation of the volt-ampere characteristics of thin-film superconducting junctions of metal-insulator- metal construction. This explanation entails the electron flow through the insulating layer through the use of the Fermi-Dirac and density of states functions.

The theoretical investigation is based on the BCS Theory and results in volt-ampere characteristics that agree very well with published experimental …