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High Temperature Silicon Carbide Mixed-Signal Circuits For Integrated Control And Data Acquisition, Ashfaqur Rahman
High Temperature Silicon Carbide Mixed-Signal Circuits For Integrated Control And Data Acquisition, Ashfaqur Rahman
Graduate Theses and Dissertations
Wide bandgap semiconductor materials such as gallium nitride (GaN) and silicon carbide have grown in popularity as a substrate for power devices for high temperature and high voltage applications over the last two decades. Recent research has been focused on the design of integrated circuits for protection and control in these wide bandgap materials. The ICs developed in SiC and GaN can not only complement the power devices in high voltage and high frequency applications, but can also be used for standalone high temperature control and data acquisition circuitry.
This dissertation work aims to explore the possibilities in high temperature …
A Phase-Locked Loop In High-Temperature Silicon Carbide And General Design Methods For Silicon Carbide Integrated Circuits, Paul Shepherd
A Phase-Locked Loop In High-Temperature Silicon Carbide And General Design Methods For Silicon Carbide Integrated Circuits, Paul Shepherd
Graduate Theses and Dissertations
Silicon carbide (SiC) has long been considered for integrated circuits (ICs). It offers several advantages, including wider temperature range, larger critical electric field, and greater radiation immunity with respect to Silicon (Si). At the same time, it suffers from challenges in fabrication consistency and lower transconductance which the designer must overcome. One of the recent SiC IC processes developed is the Raytheon High-Temperature Silicon Carbide (HTSiC) complementary MOSFET process. This process is one of the first to offer P channel MOSFETs and, as a result, a greater variety of circuits can be built in it.
The behavior of SiC MOSFETs …