VLSI and Circuits, Embedded and Hardware Systems Commons^™

Resistive Switching In Fto/Cuo-Cu2o/Au Memory Devices, Amir Shariffar, Haider Salman, Tanveer A. Siddique, Wafaa Gebril, M. Omar Manasreh

Electrical Engineering Faculty Publications and Presentations

Memristors are considered to be next-generation non-volatile memory devices owing to their fast switching and low power consumption. Metal oxide memristors have been extensively investigated and reported to be promising devices, although they still suffer from poor stability and laborious fabrication process. Herein, we report a stable and power-efficient memristor with novel heterogenous electrodes structure and facile fabrication based on CuO-Cu2O complex thin films. The proposed structure of the memristor contains an active complex layer of cupric oxide (CuO) and cuprous oxide (Cu2O) sandwiched between fluorine-doped tin oxide (FTO) and gold (Au) electrodes. The fabricated memristors demonstrate bipolar resistive switching …