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Articles 31 - 33 of 33
Full-Text Articles in Power and Energy
Study On Nano Electrode Material Of Lithium Ion Batteries, Jinkua You, Yong Yang, Dong Shu, Shenghui Wu, Yingchun Zhang, Zugeng Lin
Study On Nano Electrode Material Of Lithium Ion Batteries, Jinkua You, Yong Yang, Dong Shu, Shenghui Wu, Yingchun Zhang, Zugeng Lin
Journal of Electrochemistry
In this paper, the structure and morphology of the nano phase electrode materials have been characterized with XRD and TEM. The performances of electrochemical intercalation and deintercalation of lithium ions have been studied by using cyclic voltammograms and galvanostatic charge discharge techniques. The results show that the nano materials posses advantage of micro structure and Li+ ions intercalation performances. The observed high capacity and large charge discharge current density of the nano phase materials seem to have resulted from three kinds of effects: 1) an increase in the space for Li+ ions intercalation; 2) a decrease in the …
Fuel Cells, Frederick J. Munster Jr.
Fuel Cells, Frederick J. Munster Jr.
Maine Collection
Fuel Cells
by Frederick J. Munster Jr.
Edited by: Mr. Christopher Carroll
Maine Department of Economic Development, Augusta, Maine, 1998.
Contents: Hydrogen / Hydrogen Safety / Electrolysis / Electrolyzers / History of Fuel Cells / How Fuel Cells Operate / Fuel Cell Types / Fuel Cell Electrochemistry / Power Systems / Fuel Cells in Transportation / Hydrogen Powered Internal Combustion Engines / Home, Garden, Education and Industry / For More Information / Glossary / References
A Study Of Transconductance Degradation In Hemt Using A Self-Consistent Boltzmann-Poisson-Schrodinger Solver, Rahim Khoie
A Study Of Transconductance Degradation In Hemt Using A Self-Consistent Boltzmann-Poisson-Schrodinger Solver, Rahim Khoie
Electrical & Computer Engineering Faculty Research
A self-consistent Boltzmann-Poisson-Schrödinger Solver is used to study the transconductance degradation in high electron mobility transistor (HEMT), which has extensively been reported by both experimental [1]-[8] and computational [9]-[ 13] researchers. As the gate voltage of a HEMT device is increased, its transconductance increases until it reaches a peak value, beyond which, the transconductance is degraded rather sharply with further increase in applied gate bias. We previously reported a two-subband self-consistent Boltzmann-Poisson- Schrödinger Solver for HEMT. [14] We further incorporated an additional self-consistency by calculating field-dependent, energy-dependent intersubband and intrasubband scattering rates due to ionized impurities and polar optical phonons.[15] …