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Full-Text Articles in Nanotechnology Fabrication
Size-Dependent Metal-Insulator Transition In Pt-Dispersed Sio2 Thin Film: A Candidate For Future Non-Volatile Memory, Albert B. Chen
Size-Dependent Metal-Insulator Transition In Pt-Dispersed Sio2 Thin Film: A Candidate For Future Non-Volatile Memory, Albert B. Chen
Albert B Chen
Non-volatile random access memories (NVRAM) are promising data storage and processing devices. Various NVRAM, such as FeRAM and MRAM, have been studied in the past. But resistance switching random access memory (RRAM) has demonstrated the most potential for replacing flash memory in use today. In this dissertation, a novel RRAM material design that relies upon an electronic transition, rather than a phase change (as in chalcogenide Ovonic RRAM) or a structural change (such in oxide and halide filamentary RRAM), is investigated. Since the design is not limited to a single material but applicable to general combinations of metals and insulators, …
A Parallel Circuit Model For Multi-State Resistive-Switching Random Access Memory, Albert Chen
A Parallel Circuit Model For Multi-State Resistive-Switching Random Access Memory, Albert Chen
Albert B Chen
Large, rapidly growing literature is available on bipolar resistive-switching random access memories (RRAM) made of myriad of simple and advanced materials. Many of them exhibit similar resistance switching behavior but, until now, no unifying model can allow quantification of their voltage and time responses. Using a simple parallel circuit model, these responses of a newly discovered RRAM made of a thin-film random material are successfully analyzed. The analysis clearly reveals a large population of intermediate states with remarkably similar switching characteristics. Such modeling framework based on simple circuit constructs also appears applicable to several RRAM made of other materials. This …