Open Access. Powered by Scholars. Published by Universities.®
- Keyword
- Publication
Articles 1 - 2 of 2
Full-Text Articles in Nanotechnology Fabrication
Characterization Of Low Power Hfo2 Based Switching Devices For In-Memory Computing, Aseel Zeinati
Characterization Of Low Power Hfo2 Based Switching Devices For In-Memory Computing, Aseel Zeinati
Theses
Oxide based Resistive Random Access Memory (RRAM) devices are investigated as one of the promising non-volatile memories to be used for in-memory computing that will replace the classical von Neumann architecture and reduce the power consumption. These applications required multilevel cell (MLC) characteristics that can be achieved in RRAM devices. One of the methods to achieve this analog switching behavior is by performing an optimized electrical pulse. The RRAM device structure is basically an insulator between two metals as metal-insulator-metal (MIM) structure. Where one of the primary challenges is to assign an RRAM stack with both low power consumption and …
Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications, Ravi Teja Velpula
Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications, Ravi Teja Velpula
Dissertations
Wide bandgap (WBG) semiconductors play a crucial role in the current solid-state lighting technology. The AlGaN compound semiconductor is widely used for ultraviolet (UV) light-emitting diodes (LEDs), however, the efficiency of these LEDs is largely in a single-digit percentage range due to several factors. Until recently, AlInN alloy has been relatively unexplored, though it holds potential for light-emitters operating in the visible and UV regions. In this dissertation, the first axial AlInN core-shell nanowire UV LEDs operating in the UV-A and UV-B regions with an internal quantum efficiency (IQE) of 52% are demonstrated. Moreover, the light extraction efficiency of this …