Open Access. Powered by Scholars. Published by Universities.®
- Discipline
-
- Atomic, Molecular and Optical Physics (1)
- Chemistry (1)
- Computer Engineering (1)
- Data Storage Systems (1)
- Electrical and Electronics (1)
-
- Electromagnetics and Photonics (1)
- Engineering Physics (1)
- Hardware Systems (1)
- Materials Chemistry (1)
- Materials Science and Engineering (1)
- Nanoscience and Nanotechnology (1)
- Other Computer Engineering (1)
- Other Materials Science and Engineering (1)
- Other Physics (1)
- Physical Sciences and Mathematics (1)
- Physics (1)
- Semiconductor and Optical Materials (1)
- VLSI and Circuits, Embedded and Hardware Systems (1)
- Keyword
Articles 1 - 2 of 2
Full-Text Articles in Nanotechnology Fabrication
Characterization Of Low Power Hfo2 Based Switching Devices For In-Memory Computing, Aseel Zeinati
Characterization Of Low Power Hfo2 Based Switching Devices For In-Memory Computing, Aseel Zeinati
Theses
Oxide based Resistive Random Access Memory (RRAM) devices are investigated as one of the promising non-volatile memories to be used for in-memory computing that will replace the classical von Neumann architecture and reduce the power consumption. These applications required multilevel cell (MLC) characteristics that can be achieved in RRAM devices. One of the methods to achieve this analog switching behavior is by performing an optimized electrical pulse. The RRAM device structure is basically an insulator between two metals as metal-insulator-metal (MIM) structure. Where one of the primary challenges is to assign an RRAM stack with both low power consumption and …
Treated Hfo2 Based Rram Devices With Ru, Tan, Tin As Top Electrode For In-Memory Computing Hardware, Yuvraj Dineshkumar Patel
Treated Hfo2 Based Rram Devices With Ru, Tan, Tin As Top Electrode For In-Memory Computing Hardware, Yuvraj Dineshkumar Patel
Theses
The scalability and power efficiency of the conventional CMOS technology is steadily coming to a halt due to increasing problems and challenges in fabrication technology. Many non-volatile memory devices have emerged recently to meet the scaling challenges. Memory devices such as RRAMs or ReRAM (Resistive Random-Access Memory) have proved to be a promising candidate for analog in memory computing applications related to inference and learning in artificial intelligence. A RRAM cell has a MIM (Metal insulator metal) structure that exhibits reversible resistive switching on application of positive or negative voltage. But detailed studies on the power consumption, repeatability and retention …