Nanotechnology Fabrication | Open Access Articles

Nano-Structured Materials For Imaging Polarimetry, Andrew Sarangan

Andrew Sarangan

No abstract provided.

Valley Splitting In Si Quantum Dots Embedded In Sige, Srikant Srinivasan

Srikant Srinivasan

We examine energy spectra of Si quantum dots embedded in Si0.75Ge0.25 buffers using atomistic numerical calculations for dimensions relevant to qubit implementations. The valley degeneracy of the lowest orbital state is lifted and valley splitting fluctuates with monolayer frequency as a function of the dot thickness. For dot thicknesses ≤ 6 nm, valley splitting is found to be >150 μeV. Using the unique advantage of atomistic calculations, we analyze the effect of buffer disorder on valley splitting. Disorder in the buffer leads to the suppression of valley splitting by a factor of 2.5; the splitting fluctuates with ≈ 20 μeV …

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Circuit Elements At Optical Frequencies: Nanoinductors, Nanocapacitors, And Nanoresistors, Nader Engheta, Alessandro Salandrino, Andrea Alù

Andrea Alù

We present the concept of circuit nanoelements in the optical domain using plasmonic and nonplasmonic nanoparticles. Three basic circuit elements, i.e., nanoinductors, nanocapacitors, and nanoresistors, are discussed in terms of small nanostructures with different material properties. Coupled nanoscale circuits and parallel and series combinations are also envisioned, which may provide road maps for the synthesis of more complex circuits in the IR and visible bands. Ideas for the optical implementation of right-handed and left-handed nanotransmission lines are also forecasted.