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Full-Text Articles in Nanotechnology Fabrication

Fabrication Of Vertical Silicon Nanowires Through Metal Assisted Deposition, Matthew Garett Young May 2012

Fabrication Of Vertical Silicon Nanowires Through Metal Assisted Deposition, Matthew Garett Young

Graduate Theses and Dissertations

Controlled and ordered growth of Si nanowires through a low temperature fabrication method compatible with CMOS processing lines is a highly desirable replacement to future electronic fabrication technologies as well as a candidate for a low cost route to inexpensive photovoltaics. This stems from the fact that traditional CMOS based electronics are hitting physical barriers that are slowing the Moore's Law trend as well as the demand for an inexpensive solar cell technology that can obtain grid parity. A fractional factorial growth study is presented that compares the growth of Au and Al catalyzed Si nanowires at temperatures ranging from …


Plasma-Assisted Molecular Beam Epitaxial Growth Of Indium Nitride For Future Device Fabrication, Steven Paul Minor May 2012

Plasma-Assisted Molecular Beam Epitaxial Growth Of Indium Nitride For Future Device Fabrication, Steven Paul Minor

Graduate Theses and Dissertations

The need for energy conservation has heightened the search for new materials that can reduce energy consumption or produce energy by the means of photovoltaic cells. III-nitride alloys show promise for these applications due to their generally good transport properties and ability to withstand high power applications. Along with these, this family of semiconductor alloys has a direct bandgap energy range (0.7-6.2 eV) which spans the entire visible spectrum and encompasses a large portion of the available solar spectrum. Of the three root III-nitride semiconductors, AlN, GaN, and InN, InN has only recently become attainable epitaxially with qualities good enough …