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Full-Text Articles in Nanotechnology Fabrication
Skybridge-3d-Cmos: A Fine-Grained Vertical 3d-Cmos Technology Paving New Direction For 3d Ic, Jiajun Shi
Skybridge-3d-Cmos: A Fine-Grained Vertical 3d-Cmos Technology Paving New Direction For 3d Ic, Jiajun Shi
Doctoral Dissertations
2D CMOS integrated circuit (IC) technology scaling faces severe challenges that result from device scaling limitations, interconnect bottleneck that dominates power and performance, etc. 3D ICs with die-die and layer-layer stacking using Through Silicon Vias (TSVs) and Monolithic Inter-layer Vias (MIVs) have been explored in recent years to generate circuits with considerable interconnect saving for continuing technology scaling. However, these 3D IC technologies still rely on conventional 2D CMOS’s device, circuit and interconnect mindset showing only incremental benefits while adding new challenges reliability issues, robustness of power delivery network design and short-channel effects as technology node scaling. Skybridge-3D-CMOS (S3DC) is …
Skybridge: A New Nanoscale 3-D Computing Framework For Future Integrated Circuits, Mostafizur Rahman
Skybridge: A New Nanoscale 3-D Computing Framework For Future Integrated Circuits, Mostafizur Rahman
Doctoral Dissertations
Continuous scaling of CMOS has been the major catalyst in miniaturization of integrated circuits (ICs) and crucial for global socio-economic progress. However, continuing the traditional way of scaling to sub-20nm technologies is proving to be very difficult as MOSFETs are reaching their fundamental performance limits [1] and interconnection bottleneck is dominating IC operational power and performance [2]. Migrating to 3-D, as a way to advance scaling, has been elusive due to inherent customization and manufacturing requirements in CMOS architecture that are incompatible with 3-D organization. Partial attempts with die-die [3] and layer-layer [4] stacking have their own limitations [5]. We …