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Theses and Dissertations--Electrical and Computer Engineering

SCAPS-1D

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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Investigation Of Host Nanotube Parameters For Enhancing The Performance Of Nanostructured Cds-Cdte Solar Cells, Deepak Kumar Jan 2020

Investigation Of Host Nanotube Parameters For Enhancing The Performance Of Nanostructured Cds-Cdte Solar Cells, Deepak Kumar

Theses and Dissertations--Electrical and Computer Engineering

Numerical simulations are performed to investigate the effects of host nanotube parameters (pore diameter and pitch for different CdS coverages) and CdTe doping density on device performance in nanowire CdS/ CdTe solar cells using SCAPS-1D. This research finds the optimum values for these parameters in order to achieve the highest efficiency. Experimentally the effect of anodization voltage and fluoride ion concentration on the pore diameter and the pitch are studied for the Titania nanotubes host. It is observed that in the range of 0.3 mL to 2 mL of ammonium fluoride content, pore diameter and the pitch of the Titania …


Modelling Of The Nanowire Cds-Cdte Device Design For Enhanced Quantum Efficiency In Window-Absorber Type Solar Cells, Rasika Ganvir Jan 2016

Modelling Of The Nanowire Cds-Cdte Device Design For Enhanced Quantum Efficiency In Window-Absorber Type Solar Cells, Rasika Ganvir

Theses and Dissertations--Electrical and Computer Engineering

Numerical simulations of current-voltage characteristics of nanowire CdS/CdTe solar cells are performed as a function of temperature using SCAPS-1D. This research compares the experimental current-voltage (I-V) characteristics with the numerical (I-V) simulations obtained from SCAPS-1D at various temperatures. Various device parameters were studied which can affect the efficiency of the nanowire-CdS/CdTe solar cell. It was observed that the present simulated model explains the important effects of these solar cell devices, such as the crossover and the rollover effect. It was shown that the removal of defect in i-SnO2 is responsible for producing the crossover effect. In the past, the rollover …