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Semi-Insulating Polysilicon Hetero- And Isotype Junctions On Silicon, R. M. Ranade, S. S. Ang, W. D. Brown

Journal of the Arkansas Academy of Science

The effects of nitrogen trifluorideinthe gas stream during deposition of semi-insulating polysilicon (SIPOS) on the electrical characteristics of undoped (SIPSO)/p-Si, and n+-SIPOS/n-Si isotype junctions were investigated. The current-voltage characteristics of undoped SIPOS/p-Si heterojunctions exhibit a strong dependence on the oxygen content of the SIPOS film and depart from a hyperbolic sine behavior as the refractive index of the SIPOS increases.. The addition of nitrogen trifluoride decreases the current density of these undoped SIPOS/p-Si heterojunctions due presumably to the oxidation/hydrolysis of SiF species intoSiO2. The n+-SIPOS formed a rectifying isotype junction o n-Si. The forward current voltage characteristics exhibit two distinct …