Electronic Devices and Semiconductor Manufacturing Commons^™

Thermal Performance Of Algan/Gan Based Power Switching Devices For Transformerless Inverters, Mahesh B. Manandhar

Electronic Theses and Dissertations

Wide Bandgap (WBG) semiconductors like Silicon Carbide (SiC), Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) have superior material properties as compared to Silicon (Si) like higher electrical breakdown voltages and bandgap energies as well as lower leakage currents as compared to Si which make them ideal to operate at higher voltage with lower thermal losses. These properties make WBG materials ideal for power devices like Vertical Double-diffused Metal Oxide Semiconductor Field Effect Transistors (VDMOSFETs). The use of digital prototyping through computer simulation increases the speed and flexibility of the design iterations while reducing the cost and time required for …