Electronic Devices and Semiconductor Manufacturing Commons^™

Ferroelectric Batio3/Srtio3 Multilayered Thin Films For Room-Temperature Tunable Microwave Elements, Ming Liu, Chunrui Ma, Gregory Collins, Jian Liu, Chonglin Chen, Andy D. Alemayehu, Guru Subramanyam, Ying Ding, Jianghua Chen, Chao Dai, Yuan Lin, Melanie W. Cole

Electrical and Computer Engineering Faculty Publications

Ferroelectric BaTiO3/SrTiO3 with optimized c-axis-oriented multilayered thin films were epitaxially fabricated on (001) MgO substrates. The microstructural studies indicate that the in-plane interface relationships between the films as well as the substrate are determined to be (001)SrTiO3//(001)BaTiO3//(001)MgO and [100]SrTiO3//[100]BaTiO3//[100]MgO. The microwave (5 to 18 GHz) dielectric measurements reveal that the multilayered thin films have excellent dielectric properties with large dielectric constant, low dielectric loss, and high dielectric tunability, which suggests that the as-grown ferroelectric multilayered thin films can be developed for room-temperature tunable microwave elements and related device applications.