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Boise State University Theses and Dissertations

Ionic Memory

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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Nano-Ionic Redox Resistive Ram – Device Performance Enhancement Through Materials Engineering, Characterization And Electrical Testing, Muhammad Rizwan Latif May 2014

Nano-Ionic Redox Resistive Ram – Device Performance Enhancement Through Materials Engineering, Characterization And Electrical Testing, Muhammad Rizwan Latif

Boise State University Theses and Dissertations

In recent years, Redox Conductive Bridge Memory (RCBM), which falls in the Resistive Random Access Memory (RRAM) category, has gained considerable attention as one of the promising candidates for future generation non-volatile memory due to its advantages over Flash memory as it offers high density, low operating power, fast read/write operation, and compatibility with conventional CMOS process. Currently research is being conducted to improve the reliability of the RCBM devices, which are comprised of an insulating material, also known as active layer, sandwiched between two metal electrodes. The main working mechanism of these devices is based on the resistance change …


Investigations Of Conduction Mechanisms Of Ion-Conducting, Bridging Memory Devices (Cbram/Pmc/Ecm), Kyle Bradley Campbell Aug 2012

Investigations Of Conduction Mechanisms Of Ion-Conducting, Bridging Memory Devices (Cbram/Pmc/Ecm), Kyle Bradley Campbell

Boise State University Theses and Dissertations

Electron storage memory devices are approaching the minimum dimensions that are physically possible due to the onward march of Moore’s law. To continue to enable the increased memory densities needed for today’s applications, especially low power and size constrained mobile devices, new memory solutions are needed. Several candidates are emerging in this space. Metal ion-conducting memory devices are being investigated due to excellent scalability, speed, and low power. These devices are part of a memory class called resistive memory. In the literature, they are referred to as CBRAM (conductive bridge random access memory), PMC (programmable metallization cell), ECM (electrochemical metallization …