Electronic Devices and Semiconductor Manufacturing Commons^™

Tunneling In Si Mos Nanostructures, Amir Shirkhorshidian

Electrical and Computer Engineering ETDs

In this dissertation, split-gate tunnel barriers in enhancement-mode silicon metal- oxide-semiconductor (MOS) device structures are characterized electrically at liquid helium temperatures (T = 4.2 K) using transport spectroscopy. Tunnel barriers with different gate geometries and barriers implanted with a small number of antimony donor atoms are characterized. Low disorder MOS tunnel barriers are demonstrated and compared to the implanted cases. The ”clean” MOS tunnel barriers are an important proof of principle that disorder free tunnel barriers can be achieved in MOS. The implanted cases provide an important reference for the effects of donors and shallow traps on a MOS tunnel …