Electronic Devices and Semiconductor Manufacturing Commons^™

Amorphous Boron Carbide-Amorphous Silicon Heterojunction Devices, Vojislav Medic

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

This dissertation will show successful development and characterization of amorphous boron carbide-amorphous silicon heterojunction device with potential for neutron detection. The amorphous hydrogenated boron carbide (a-BC:H) has been extensively researched as a semiconductor for neutron voltaic device fabrication. Naturally occurring boron contains 19.8% of boron isotope B¹⁰ that has a high absorption cross section of thermal neutrons at lower energies, and boron carbide contains 14.7% of that B¹⁰ isotope. Therefore, as a semiconductor compound of boron a-BC:H has the ability to absorb radiation, generate charge carriers, and collect those carriers. Previous work on a-BC:H devices investigated the fabrication …