Electronic Devices and Semiconductor Manufacturing Commons^™

Electrical Characterization Of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide, George Glen Peterson

Department of Mechanical and Materials Engineering: Dissertations, Theses, and Student Research

Semiconducting amorphous partially dehydrogenated boron carbide has been explored as a neutron voltaic for operation in radiation harsh environments, such as on deep space satellites/probes. A neutron voltaic device could also be used as a solid state neutron radiation detector to provide immediate alerts for radiation workers/students, as opposed to the passive dosimetry badges utilized today. Understanding how the irradiation environment effects the electrical properties of semiconducting amorphous partially dehydrogenated boron carbide is important to predicting the stability of these devices in operation. p-n heterojunction diodes were formed from the synthesis of semiconducting amorphous partially dehydrogenated boron carbide on silicon …

Laser-Assisted Metal Organic Chemical Vapor Deposition Of Gallium Nitride, Hossein Rabiee Golgir

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Due to its unique properties, gallium nitride is of great interest in industry applications including optoelectronics (LEDs, diode laser, detector), high power electronics, and RF and wirelss communication devices. The inherent shortcomings of current conventional deposition methods and the ever-increasing demand for gallium nitride urge extended efforts for further enhancement of gallium nitride deposition. The processes of conventional methods for gallium nitride deposition, which rely on thermal heating, are inefficient energy coupling routes to drive gas reactions. A high deposition temperature (1000-1100 °C) is generally required to overcome the energy barriers to precursor adsorption and surface adatom migration. However, there …

Real-Time Internal Temperature Estimation And Health Monitoring For Igbt Modules, Ze Wang

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar transistors (IGBTs), are among the most fragile components of power electronic converters. Thermomechanical stresses produced by temperature variations during operational and environmental loads are the major causes of IGBT degradation. As the devices are often operated under complex working conditions, temperature variations and the associated damage are difficult to predict during the converter design stage. A promising approach—online health monitoring and prognosis for power semiconductor devices—that can avoid device failure and effectively schedule maintenance has attracted much interest.

This dissertation research focused on real-time accurate internal temperature estimation …