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Articles 1 - 5 of 5
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Exploration Of Radiation Damage Mechanism In Mems Devices., Pranoy Deb Shuvra
Exploration Of Radiation Damage Mechanism In Mems Devices., Pranoy Deb Shuvra
Electronic Theses and Dissertations
We explored UV, X-ray and proton radiation damage mechanisms in MEMS resonators. T-shaped MEMS resonators of different dimensions were used to investigate the effect of radiation. Radiation damage is observed in the form of resistance and resonance frequency shift of the device. The resistance change indicates a change in free carrier concentration and mobility, while the resonance frequency change indicates a change in mass and/or elastic constant. For 255nm UV radiation, we observed a persistent photoconductivity that lasts for about 60 hours after radiation is turned off. The resonance frequency also decreases 40-90 ppm during irradiation and slowly recovers at …
Hybrid Perovskite Characterization And Device Applications., Kasun Fernando
Hybrid Perovskite Characterization And Device Applications., Kasun Fernando
Electronic Theses and Dissertations
Hybrid perovskites are a group of materials that has shown a great impact in the field of scientific research in the past decade due to the efficiency gain within a short period of time. Hot casting is one technique that has been producing high efficient and stable solar cells. Electrical transportation of lateral device structure by such film is explored to understand basic properties and predict possible device applications using it. Under dark, memristive ability of the film was explored using various experiments. Unique uni-polar memristor ability was observed. Using the experimental results, a model is hypothesized using the concepts …
Vertical Gallium Nitride Schottky Diodes For Power Switching Applications., Sowmya Kolli
Vertical Gallium Nitride Schottky Diodes For Power Switching Applications., Sowmya Kolli
Electronic Theses and Dissertations
Gallium nitride (GaN) has enormous potential for use in devices operating at high power, frequency and temperature. Its wide band gap, high critical electric field and favourable carrier properties lead to lower switching losses and conduction losses in power electronic devices. However, most GaN rectifiers reported to date exhibit an ON-resistance (Ron) versus breakdown voltage much below theoretical predictions. Heteroepitaxial growth of GaN on substrates such as SiC, Si, and sapphire suffer from a high density of threading dislocations defects due to the mismatch in lattice constants and thermal expansion coefficients. Vertical devices, in which a bulk GaN substrate is …
Challenges In Flexible Microsystem Manufacturing : Fabrication, Robotic Assembly, Control, And Packaging., Danming Wei
Challenges In Flexible Microsystem Manufacturing : Fabrication, Robotic Assembly, Control, And Packaging., Danming Wei
Electronic Theses and Dissertations
Microsystems have been investigated with renewed interest for the last three decades because of the emerging development of microelectromechanical system (MEMS) technology and the advancement of nanotechnology. The applications of microrobots and distributed sensors have the potential to revolutionize micro and nano manufacturing and have other important health applications for drug delivery and minimal invasive surgery. A class of microrobots studied in this thesis, such as the Solid Articulated Four Axis Microrobot (sAFAM) are driven by MEMS actuators, transmissions, and end-effectors realized by 3-Dimensional MEMS assembly. Another class of microrobots studied here, like those competing in the annual IEEE Mobile …
A Novel Design For A Silicon And Cadmium Telluride Tandem Solar Cell., Jacob A Vittitow
A Novel Design For A Silicon And Cadmium Telluride Tandem Solar Cell., Jacob A Vittitow
Electronic Theses and Dissertations
No abstract provided.