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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Quantitative Analysis Of X-Ray Fluorescence Absorption And Emission For Thickness Determination Of Ald-Grown Metal And Oxide Nanoscaled Films, Tarek M. Abdel-Fattah, Alex Wixtrom, Larry Arias, Kai Zhang, Helmut Baumgart
Quantitative Analysis Of X-Ray Fluorescence Absorption And Emission For Thickness Determination Of Ald-Grown Metal And Oxide Nanoscaled Films, Tarek M. Abdel-Fattah, Alex Wixtrom, Larry Arias, Kai Zhang, Helmut Baumgart
Electrical & Computer Engineering Faculty Publications
This study describes the use of X-ray fluorescence spectroscopy (XRF) to determine the thickness of nanoscaled thin films of insulating oxides such as Al2O3, HfO2, and ZrO2, semiconducting oxides such as TiO2, ZnO, and metals like Pt, on silicon substrates synthesized by atomic layer deposition (ALD) technology. XRF thickness measurements were compared with the predicted layer thickness based on calculations from known ALD growth rates for each metal or metal oxide films. The ALD growth rates have been calibrated with TEM cross-sectional measurements of the resulting film thickness. The results …
Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali
Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
The effects of laser-induced electronic excitations on the self-assembly of Ge quantum dots on Si (100) - (2×1) grown by pulsed laser deposition are studied. Electronic excitations due to laser irradiation of the Si substrate and the Ge film during growth are shown to decrease the roughness of films grown at a substrate temperature of ∼120 °C. At this temperature, the grown films are nonepitaxial. Electronic excitation results in the formation of an epitaxial wetting layer and crystalline Ge quantum dots at ∼260 °C, a temperature at which no crystalline quantum dots form without excitation under the same deposition conditions. …