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Articles 1 - 8 of 8
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov
Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov
Theses and Dissertations
This study explores the potential of beryllium (Be) as an alternative dopant to magnesium (Mg) for achieving higher hole concentrations in gallium nitride (GaN). Despite Mg prominence as an acceptor in optoelectronic and high-power devices, its deep acceptor level at 0.22 eV above the valence band limits its effectiveness. By examining Be, this research aims to pave the way to overcoming these limitations and extend the findings to aluminum nitride and aluminum gallium nitride (AlGaN) alloy. Key contributions of this work include. i)Identification of three Be-related luminescence bands in GaN through photoluminescence spectroscopy, improving the understanding needed for further material …
The Photoluminescence Spectra Of Powders Of Zinc Oxide With Laser Excitation, Ilyos A. Rakhmatullaev, Vladimir S. Gorelik, Abdulla K. Kurbonov
The Photoluminescence Spectra Of Powders Of Zinc Oxide With Laser Excitation, Ilyos A. Rakhmatullaev, Vladimir S. Gorelik, Abdulla K. Kurbonov
Euroasian Journal of Semiconductors Science and Engineering
The original sensitive method of research of the nanopowders based on use of laser excitation and a multichannel spectrometer is offered. The developed method can be used for the analysis of quality of a wide class of the powders on the basis of laser spectroscopy of secondary radiation.
The Photoluminescence Spectra Of Powders Of Zinc Oxide With Laser Excitation, Ilyos A. Rakhmatullaev, Vladimir S. Gorelik, Abdulla K. Kurbonov
The Photoluminescence Spectra Of Powders Of Zinc Oxide With Laser Excitation, Ilyos A. Rakhmatullaev, Vladimir S. Gorelik, Abdulla K. Kurbonov
Euroasian Journal of Semiconductors Science and Engineering
The original sensitive method of research of the nanopowders based on use of laser excitation and a multichannel spectrometer is offered. The developed method can be used for the analysis of quality of a wide class of the powders on the basis of laser spectroscopy of secondary radiation.
Direct Bandgap Cross-Over Point Of Ge1-YSnY Grown On Si Estimated Through Temperature-Dependent Photoluminescence Studies, Thomas R. Harris, Mee-Yi Ryu, Yung Kee Yeo, Buguo Wang, C. L. Senaratne
Direct Bandgap Cross-Over Point Of Ge1-YSnY Grown On Si Estimated Through Temperature-Dependent Photoluminescence Studies, Thomas R. Harris, Mee-Yi Ryu, Yung Kee Yeo, Buguo Wang, C. L. Senaratne
Faculty Publications
Epitaxial Ge1-ySny (y = 0%–7.5%) alloys grown on either Si or Ge-buffered Si substrates by chemical vapor deposition were studied as a function of Sn content using temperature-dependent photoluminescence (PL). PL emission peaks from both the direct bandgap (Γ-valley) and the indirect bandgap (L-valley) to the valence band (denoted by ED and EID, respectively) were clearly observed at 125 and 175 K for most Ge1-ySny samples studied. At 300 K, however, all of the samples exhibited dominant ED emission with either very weak or no measureable EID emission. At 10 K, …
Neutron Radiation Effects On Ge And Gesn Semiconductors, Christopher T. O'Daniel
Neutron Radiation Effects On Ge And Gesn Semiconductors, Christopher T. O'Daniel
Theses and Dissertations
Two different semiconductor materials received neutron radiation for assessment of radiation damage. The two materials are undoped bulk Ge and epitaxial Ge0.991Sn0.009, which is doped heavily with phosphorous. At room temperature, the Ge sample has direct and indirect bandgaps at 0.78 eV and 0.66 eV, respectively. The Ge0.991Sn0.009 sample has direct and indirect bandgaps at 0.72 eV and 0.63 eV, respectively. Two samples of each material were exposed to research reactor neutrons, delivering a 1 MeV equivalent neutron fluence of 2.52 × 1015 n/cm2. In order to assess the radiation …
Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian
Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian
Theses and Dissertations
Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …
Optical Characterization Of Ingan Heterostructures For Blue Light Emitters And Vertical Cavity Lasers: Efficiency And Recombination Dynamics, Serdal Okur
Theses and Dissertations
OPTICAL CHARACTERIZATION OF INGAN HETEROSTRUCTURES FOR BLUE LIGHT EMITTERS AND VERTICAL CAVITY LASERS: EFFICIENCY AND RECOMBINATION DYNAMICS
By Serdal Okur, Ph.D.
A thesis submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy at Virginia Commonwealth University.
Virginia Commonwealth University, 2014.
Major Director: Ümit Özgür, Associate Professor, Electrical and Computer Engineering
This thesis explores radiative efficiencies and recombination dynamics in InGaN-based heterostructures and their applications as active regions in blue light emitters and particularly vertical cavities. The investigations focus on understanding the mechanism of efficiency loss at high injection as well as developing designs to mitigate …
Photoluminescence Spectroscopy Of 4h- And 6h-Sic, William A. Davis
Photoluminescence Spectroscopy Of 4h- And 6h-Sic, William A. Davis
Theses and Dissertations
Typical undoped bulk grown SiC shows n- or p-type conductivity due to residual impurities such as nitrogen, boron, or aluminum. In order to produce high resistivity material, vanadium can be used as a compensating dopant. Since vanadium is an amphoteric dopant in SiC, it produces either a donor state, VSi4+(3d1) → VSi5+(3d0), or an acceptor state, VSi4+(3d1) → VSi3+(3d2). Thus, vanadium doping can compensate both n- and p-type conductivity. In this work, vanadium doped and undoped 4H- and 6H-SiC grown …