Open Access. Powered by Scholars. Published by Universities.®
Electronic Devices and Semiconductor Manufacturing Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Discipline
-
- Aerospace Engineering (1)
- Chemical Engineering (1)
- Chemistry (1)
- Condensed Matter Physics (1)
- Controls and Control Theory (1)
-
- Electrical and Electronics (1)
- Engineering Physics (1)
- Engineering Science and Materials (1)
- Materials Chemistry (1)
- Materials Science and Engineering (1)
- Nanotechnology Fabrication (1)
- Other Chemical Engineering (1)
- Physical Sciences and Mathematics (1)
- Physics (1)
- Semiconductor and Optical Materials (1)
- Structures and Materials (1)
Articles 1 - 3 of 3
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Reducing Emi In Sic Direct Torque Controlled Motor Drive, Michael Sykes
Reducing Emi In Sic Direct Torque Controlled Motor Drive, Michael Sykes
Electrical Engineering Undergraduate Honors Theses
This paper covers the comparison between Silicon (Si) vs Silicon Carbide (SiC) for Motor Drive systems and a possible control algorithm to limit the increased Electromagnetic Interference (EMI) caused by using SiC transistors for the inverter. Motor Drive systems need constant improvements if the world is going to move on from machines that emit CO2 and other harmful gases into the Earth’s atmosphere. One reason these electric machines are not commonplace today is because of their efficiency and other problems they may cause. Silicon transistors are the most commonplace transistor around the world today, but advances over the past …
Simultaneous Ohmic Contacts To N And P-Type Silicon Carbide For Future Electric Vehicles, Hayden Hunter
Simultaneous Ohmic Contacts To N And P-Type Silicon Carbide For Future Electric Vehicles, Hayden Hunter
Electrical Engineering Undergraduate Honors Theses
The paper explores possible metallization schemes to form simultaneous ohmic contacts to n-type and p-type silicon carbide contacts. Silicon carbide has shown promise in revolutionizing the power electronics market due to its increased switching speed, compact design, and higher temperature tolerance when compared to Silicon, the market standard. With the continuing development of silicon carbide technology, higher efficiency in future electric vehicles can be achieved by employing this new technology. This paper discusses theoretical contact formation between metals and semiconductors along with a proposed experiment to create a Ni/Al metallization scheme on both n and p-type contacts simultaneously on a …
Synthesis Of Graphene Using Plasma Etching And Atmospheric Pressure Annealing: Process And Sensor Development, Andrew Robert Graves
Synthesis Of Graphene Using Plasma Etching And Atmospheric Pressure Annealing: Process And Sensor Development, Andrew Robert Graves
Graduate Theses, Dissertations, and Problem Reports
Having been theorized in 1947, it was not until 2004 that graphene was first isolated. In the years since its isolation, graphene has been the subject of intense, world-wide study due to its incredibly diverse array of useful properties. Even though many billions of dollars have been spent on its development, graphene has yet to break out of the laboratory and penetrate mainstream industrial applications markets. This is because graphene faces a ‘grand challenge.’ Simply put, there is currently no method of manufacturing high-quality graphene on the industrial scale. This grand challenge looms particularly large for electronic applications where the …