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- Bulk heterojunction (2)
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Articles 1 - 13 of 13
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Numerical And Analytical Modeling To Determine Performance Trade-Offs In Hydrogel-Based Ph Sensors, Piyush Dak, Muhammad Ashraful Alam
Numerical And Analytical Modeling To Determine Performance Trade-Offs In Hydrogel-Based Ph Sensors, Piyush Dak, Muhammad Ashraful Alam
Birck and NCN Publications
Hydrogel based pH sensors are promising candidates for implantable sensors due to their low-cost and biocompatibility. Despite their commercial potential and numerous theoretical/experimental reports, the trade-offs between different performance parameters are not well understood, and explicitly stated. In this work, we develop a numerical and analytical framework to show that there is a fundamental trade-off between the performance parameters i.e. sensitivity/dynamic range vs. response-time/response-asymmetry in hydrogel sensors under constrained swelling conditions. Specifically, we consider the effect of the gel parameters, such as the ionizable group density ( Nf) and its dissociation constant ( Ka), on the …
Electronic Desalting For Controlling The Ionic Environment In Droplet-Based Biosensing Platforms, Vikhram Vilasur Swaminathan, Piyush Dak, Bobby Reddy Jr, Eric Salm, Carlos Duarte-Guevara, Yu Zhong, Andrew Fischer, Yi-Shao Liu, Rashid Bashir
Electronic Desalting For Controlling The Ionic Environment In Droplet-Based Biosensing Platforms, Vikhram Vilasur Swaminathan, Piyush Dak, Bobby Reddy Jr, Eric Salm, Carlos Duarte-Guevara, Yu Zhong, Andrew Fischer, Yi-Shao Liu, Rashid Bashir
Birck and NCN Publications
The ability to control the ionic environment in saline waters and aqueous electrolytes is useful for desalination as well as electronic biosensing. We demonstrate a method of electronic desalting at micro-scale through on-chip micro electrodes. We show that, while desalting is limited in bulk solutions with unlimited availability of salts, significant desalting of ≥1 mM solutions can be achieved in sub-nanoliter volume droplets with diameters of ∼250 μm. Within these droplets, by using platinum-black microelectrodes and electrochemical surface treatments, we can enhance the electrode surface area to achieve >99% and 41% salt removal in 1 mM and 10 mM salt …
Role Of Atomic Variability In Dielectric Charging: A First-Principles-Based Multiscale Modeling Study, Ravi Pramod Kumar Vedula, Sambit Palit, Muhammad A. Alam, Alejandro Strachan
Role Of Atomic Variability In Dielectric Charging: A First-Principles-Based Multiscale Modeling Study, Ravi Pramod Kumar Vedula, Sambit Palit, Muhammad A. Alam, Alejandro Strachan
Birck and NCN Publications
We present a dielectric charging model that combinesab initiocalculations of trap levels with a continuum-level transport model and apply it to interpret charging currents in amorphous silicon nitride. Density functional theory calculations on an ensemble of structures predict a distribution of electron trap levels up to 1.8 eV below the conduction band edge and provide insight into the physical trapping mechanisms. Incorporating this information in the continuum model, as opposed to the standard approach of a single adjustable trap level, not only leads to a more accurate description of experimental current transients in metal-insulator-metal capacitors, but also to a more …
Nanoscale Contacts Between Semiconducting Nanowires And Metallic Graphenes, Seongmin Kim, David B. Janes, Sung-Yool Choi, Sanghyun Ju
Nanoscale Contacts Between Semiconducting Nanowires And Metallic Graphenes, Seongmin Kim, David B. Janes, Sung-Yool Choi, Sanghyun Ju
Birck and NCN Publications
Metal–semiconductor (M–S) junctions are important components in many semiconductor devices, and there is growing interest in realizing high quality M–S contacts that are optically transparent. In this paper, we present our investigations into the characteristics of M–S junction in a semiconducting ZnO nanowire that was directly grown on a multilayer graphene film (MGF). The synthesized nanowires were fabricated into two-terminal devices with MGF as one contact and Al as the other contact. By comparison with devices employing Al contacts at both ends, the nanowire resistivity and specific contact resistivity of the MGF–nanowire contact can be extracted. The extracted specific contact …
Theory Of Charging And Charge Transport In “Intermediate” Thickness Dielectrics And Its Implications For Characterization And Reliability, Sambit Palit, Muhammad A. Alam
Theory Of Charging And Charge Transport In “Intermediate” Thickness Dielectrics And Its Implications For Characterization And Reliability, Sambit Palit, Muhammad A. Alam
Birck and NCN Publications
Thin film dielectrics have broad applications, and the performance degradation due to charge trapping in these thin films is an important and pervasive reliability concern. It has been presumed since the 1960s that current transport in intermediate-thickness (IT) oxides (∼10–100 nm) can be described by Frenkel-Poole (FP) conduction (originally developed for ∼mm-thick films) and algorithms based on the FP theory can be used to extract defect energy levels and charging-limited lifetime. In this paper, we review the published results to show that the presumption of FP-dominated current in IT oxides is incorrect, and therefore, the methods to extract trap-depths to …
Threshold Of Hierarchical Percolating Systems, Jiantong Li, Biswajit Ray, Muhammad Alam, Mikael Ostling
Threshold Of Hierarchical Percolating Systems, Jiantong Li, Biswajit Ray, Muhammad Alam, Mikael Ostling
Birck and NCN Publications
Many modern nanostructured materials and doped polymers are morphologically too complex to be interpreted by classical percolation theory. Here, we develop the concept of a hierarchical percolating (percolation-within-percolation) system to describe such complex materials and illustrate how to generalize the conventional percolation to double-level percolation. Based on Monte Carlo simulations, we find that the double-level percolation threshold is close to, but definitely larger than, the product of the local percolation thresholds for the two enclosed single-level systems. The deviation may offer alternative insights into physics concerning infinite clusters and open up new research directions for percolation theory
Can Morphology Tailoring Improve The Open Circuit Voltage Of Organic Solar Cells?, Biswajit Ray, M. S. Lundstrom, Muhammad A. Alam
Can Morphology Tailoring Improve The Open Circuit Voltage Of Organic Solar Cells?, Biswajit Ray, M. S. Lundstrom, Muhammad A. Alam
Birck and NCN Publications
While the effect of interfacial morphology on the short circuit current (ISC) of organic photovoltaic devices (OPVs) is well known, its impact on open circuit voltage (VOC) and fill-factor (FF) are less clear. Since the output power of a solar cell Pout = ISCVOCFF, such understanding is critical for designing high-performance, morphology-engineered OPVs. In this letter, we provide an explicit analytical proof that any effort to radically improve VOC by tailoring bulk heterojunction morphology is futile, because any increase in ISC due to larger interface area is counterbalanced by corresponding increase …
Self-Assembly Of Single Dielectric Nanoparticle Layers And Integration In Polymer-Based Solar Cells, Jonathan E. Allen, Biswajit Ray, Mohammad R. Khan, Kevin G. Yager, Muhammad Ashraful Alam, Charles T. Black
Self-Assembly Of Single Dielectric Nanoparticle Layers And Integration In Polymer-Based Solar Cells, Jonathan E. Allen, Biswajit Ray, Mohammad R. Khan, Kevin G. Yager, Muhammad Ashraful Alam, Charles T. Black
Birck and NCN Publications
A single, self-assembled layer of highly uniform dielectric alumina nanoparticles improves the photovoltaic performance of organic semiconductor bulk heterojunction solar cells. The block copolymer based self-assembly approach is readily amenable to the large areas required for solar cell fabrication. A fraction of the performance gain results from incident light scattering which increases active layer absorption and photocurrent output, consistent with device simulations. The nanoparticle layer also roughens the device electrode surface, increasing contact area and improving device fill factor through more efficient charge collection
Experimental And Theoretical Study Of Polarization-Dependent Optical Transitions In Inas Quantum Dots At Telecommunication-Wavelengths (1300-1500 Nm), Muhammad Usman, Susannah Heck, Edmund Clarke, Peter Spencer, Hoon Ryu, Ray Murray, Gerhard Klimeck
Experimental And Theoretical Study Of Polarization-Dependent Optical Transitions In Inas Quantum Dots At Telecommunication-Wavelengths (1300-1500 Nm), Muhammad Usman, Susannah Heck, Edmund Clarke, Peter Spencer, Hoon Ryu, Ray Murray, Gerhard Klimeck
Birck and NCN Publications
observed, in contrast to recent reports for single QDJOURNAL OF APPLIED PHYSICS 109, 104510 (2011)
The design of some optical devices, such as semiconductor optical amplifiers for telecommunication applications, requires polarization-insensitive optical emission at long wavelengths (1300–1550 nm). Self-assembled InAs/GaAs quantum dots (QDs) typically exhibit ground state optical emissions at wavelengths shorter than 1300 nm with highly polarization-sensitive characteristics, although this can be modified by the use of low growth rates, the incorporation of strain-reducing capping layers, or the growth of closely-stacked QD layers. Exploiting the strain interactions between closely stacked QD layers also affords greater freedom in the choice …
Tuning Lattice Thermal Conductance By Porosity Control In Ultrascaled Si And Ge Nanowires, Abhijeet Paul, Gerhard Klimeck
Tuning Lattice Thermal Conductance By Porosity Control In Ultrascaled Si And Ge Nanowires, Abhijeet Paul, Gerhard Klimeck
Birck and NCN Publications
Porous nanowires NWs with tunable thermal conductance are examined as a candidate for thermoelectric devices with high efficiency. Thermal conductance l of porous NWs is calculated using the phonon dispersion obtained from a modified valence force field model. Porosity in the NWs break the crystal symmetry leading to the reduction in ballistic l. 100 Si and Ge NWs show similar percentage reductions in l for the same amount of porosity. The model predicts an anisotropic reduction in l in SiNWs, with 111 showing the maximum reduction followed by 100 and 110 for a similar hole radius. The reduction in l …
A Compact Physical Model For Morphology Induced Intrinsic Degradation Of Polymer Based Bulk Heterojunction Solar Cell, Biswajit Ray, Muhammad A. Alam
A Compact Physical Model For Morphology Induced Intrinsic Degradation Of Polymer Based Bulk Heterojunction Solar Cell, Biswajit Ray, Muhammad A. Alam
Birck and NCN Publications
The gradual loss of efficiency during field operation poses a fundamental challenge for economic viability of any solar cell technology. Well known examples include light-induced degradation in Si-based cell (Staebler-Wronski effect), Cu diffusion in thin film (CIGS) cell, hot-spot degradation in series connected modules, etc. Here we develop a compact model for an intrinsic degradation concern for bulk heterojunction type organic photovoltaic (BH-OPV) cells that involve continued (thermal) phase segregation of the donor-acceptor molecules leading to characteristic loss of efficiency and performance. Our approach interprets a number of BH-OPV device degradation measurements within a common framework and suggests/rationalizes intuitive routes …
Universality Of Non-Ohmic Shunt Leakage In Thin-Film Solar Cells, Sourabh Dongaonkar, Jonathan D. Servaites, Grayson M. Ford, Stephen Loser, James E. Moore, Ryan M. Gelfand, Hooman Mohseni, Hugh W. Hillhouse, Rakesh Agrawal, Mark A. Ratner, Tobin J. Marks, Mark Lundstrom, Muhammad A. Alam
Universality Of Non-Ohmic Shunt Leakage In Thin-Film Solar Cells, Sourabh Dongaonkar, Jonathan D. Servaites, Grayson M. Ford, Stephen Loser, James E. Moore, Ryan M. Gelfand, Hooman Mohseni, Hugh W. Hillhouse, Rakesh Agrawal, Mark A. Ratner, Tobin J. Marks, Mark Lundstrom, Muhammad A. Alam
Birck and NCN Publications
We compare the dark current-voltage (IV) characteristics of three different thin-film solar cell types: hydrogenated amorphous silicon (a-Si:H) p-i-n cells, organic bulk heterojunction (BHJ) cells, and Cu(In,Ga)Se2 (CIGS) cells. All three device types exhibit a significant shunt leakage current at low forward bias (V< ∼ 0.4) and reverse bias, which cannot be explained by the classical solar cell diode model. This parasitic shunt current exhibits non-Ohmic behavior, as opposed to the traditional constant shunt resistance model for photovoltaics. We show here that this shunt leakage (Ish), across all three solar cell types considered, is characterized by the following common phenomenological features: (a) voltage symmetry about V = 0, (b) nonlinear (power law) voltage dependence, and (c) extremely weak temperature dependence. Based on this analysis, we provide a simple method of subtracting this shunt current component from …
Theory Of ‘Selectivity’ Of Label-Free Nanobiosensors – A Geometro-Physical Perspective, Pradeep R. Nair, Muhammad A. Alam
Theory Of ‘Selectivity’ Of Label-Free Nanobiosensors – A Geometro-Physical Perspective, Pradeep R. Nair, Muhammad A. Alam
Birck and NCN Publications
Modern label-free biosensors are generally far more sensitive and require orders of magnitude less incubation time compared to their classical counterparts. However, a more important characteristic regarding the viability of this technology for applications in Genomics/Proteomics is defined by the ‘Selectivity’, i.e., the ability to concurrently and uniquely detect multiple target biomolecules in the presence of interfering species. Currently, there is no theory of Selectivity that allows optimization of competing factors and there are few experiments to probe this problem systematically. In this article, we use the elementary considerations of surface exclusion, diffusion limited transport, and void distribution function to …