Open Access. Powered by Scholars. Published by Universities.®
Electronic Devices and Semiconductor Manufacturing Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Institution
- Publication
- Publication Type
Articles 1 - 8 of 8
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers
Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers
Physics Undergraduate Honors Theses
Terahertz (THz) photoconductive antennas (PCAs) using 40nm thin-film flakes of black phosphorus (BP) and hexagonal boron nitride (hBN) have been shown computationally to be capable of THz emission comparable to those based on GaAs [2]. In this paper, I briefly describe the scientific and practical interest in THz emissions and explain what warrants research into black phosphorus as a photoconductive semiconductor in THz devices. Furthermore, I outline the basic principle of how these antennas work and mention alternative designs produced by other researchers in the past. Finally, I summarize the fabrication process of these antennas, as well as the measurements …
Si-Based Germanium Tin Photodetectors For Infrared Imaging And High-Speed Detection, Huong Tran
Si-Based Germanium Tin Photodetectors For Infrared Imaging And High-Speed Detection, Huong Tran
Graduate Theses and Dissertations
Infrared (IR) radiation spans the wavelengths of the windows: (1) near-IR region ranging from 0.8 to 1.0 μm, (2) shortwave IR (SWIR) ranging from 1.0 to 3.0 μm, (3) mid-wave IR (MWIR) region covering from 3.0 to 5.0 μm, (4) longwave IR (LWIR) spanning from 8.0 to 12.0 μm, and (5) very longwave IR extending beyond 12.0 μm. The MWIR and LWIR regions are important for night vision in the military, and since the atmosphere does not absorb at these wavelengths, they are also used for free-space communications and astronomy. Automotive and defect detection in the food industry and electronic …
An Ultrahigh Vacuum Complementary Metal Oxide Silicon Compatible Nonlithographic System To Fabricate Nanoparticle-Based Devices, Arghya Banerjee, Biswajit Das
An Ultrahigh Vacuum Complementary Metal Oxide Silicon Compatible Nonlithographic System To Fabricate Nanoparticle-Based Devices, Arghya Banerjee, Biswajit Das
Electrical & Computer Engineering Faculty Research
Nanoparticles of metals and semiconductors are promising for the implementation of a variety of photonic and electronic devices with superior performances and new functionalities. However, their successful implementation has been limited due to the lack of appropriate fabrication processes that are suitable for volume manufacturing. The current techniques for the fabrication of nanoparticles either are solution based, thus requiring complex surface passivation, or have severe constraints over the choice of particle size and material. We have developed an ultrahigh vacuum system for the implementation of a complex nanosystem that is flexible and compatible with the silicon integrated circuit process, thus …
Study Of Transport Properties Of Inas Using Monte Carlo Simulation, Satyanadh Gundimada
Study Of Transport Properties Of Inas Using Monte Carlo Simulation, Satyanadh Gundimada
Electrical & Computer Engineering Theses & Dissertations
The present research is aimed at ascertaining the usefulness of InAs semiconductor material for single photon avalanche photo detectors operating in the Geiger mode at 2 μm wavelengths. InAs is considered as the material suitable for the purpose because of its less bandgap and lower effective mass of the electrons when compared to other semiconductor materials presently in use. Hence, theoretically transient transport properties of bulk InAs are superior and the velocity overshoot phenomena stronger. InAs is a relatively less explored material when compared to other materials like GaAs. The choice of the material is justified with thorough exploration of …
Evaluation Of The Transport Properties Of Gasb For Bipolar Applications Through Monte Carlo Simulations, Damayanthi Palaniappan
Evaluation Of The Transport Properties Of Gasb For Bipolar Applications Through Monte Carlo Simulations, Damayanthi Palaniappan
Electrical & Computer Engineering Theses & Dissertations
GaAs is currently the semiconductor material of choice for high speed, low power applications. Its electronic transport properties are superior to almost all other semiconductors. It is also used in a variety of bipolar applications such as photodetectors and photo-mixers. However, as is well known, the hole mobility and related transport parameters of GaAs are not very good. This is a serious drawback, and poses a potential problem for all applications involving bipolar conductivity. In order to increase the high :frequency limits and high-speed capability of bipolar devices, the choice of an alternative material, therefore, becomes necessary. An important first …
Gallium Desorption Behavior At Algaas/Gaas Heterointerfaces During High-Temperature Molecular Beam Epitaxy, K. Mahalingam, D. L. Dorsey, K. R. Evans, Rama Venkat
Gallium Desorption Behavior At Algaas/Gaas Heterointerfaces During High-Temperature Molecular Beam Epitaxy, K. Mahalingam, D. L. Dorsey, K. R. Evans, Rama Venkat
Electrical & Computer Engineering Faculty Research
A Monte Carlo simulation study is performed to investigate the Ga desorption behavior during AlGaAs-on-GaAs heterointerface formation by molecular beam epitaxy. The transients in the Ga desorption rate upon opening the Al shutter are shown to be associated with the concurrent reduction in the V/III flux ratio. Monte Carlo simulations employing a constant V/III flux ratio yield a “steplike” variation in the Ga desorption rate with the resulting interfaces closer in abruptness to the ideal AlGaAs-on-GaAs interface. Further details on the stoichiometry of the interface and its relationship with predicted Ga desorption profiles is presented.
A Stochastic Model For Crystal-Amorphous Transition In Low Temperature Molecular Beam Epitaxial Si(111), R. Venkatasubramanian, Suresh Gorantla, S. Muthuvenkatraman, Donald L. Dorsey
A Stochastic Model For Crystal-Amorphous Transition In Low Temperature Molecular Beam Epitaxial Si(111), R. Venkatasubramanian, Suresh Gorantla, S. Muthuvenkatraman, Donald L. Dorsey
Electrical & Computer Engineering Faculty Research
Molecular beam epitaxial Si (111) grown below a certain temperature result in amorphous structure due to the limited surface mobility of atoms in finding correct epitaxial sites. In spite of many experimental and theoretical studies, the mechanism of crystal‐amorphous transition and its dynamics related to the growth conditions are not well understood. In this article, we present a theoretical model based on the formation of stacking fault like defects as a precursor to the amorphous transition of the layer. The model is simulated based on a stochastic model approach and the results are compared to that of experiments for temperatures …
A Novel Technique For Deep Level Characterization Of High-Resistivity Semiconductor Materials, Sridhar Panigrahi
A Novel Technique For Deep Level Characterization Of High-Resistivity Semiconductor Materials, Sridhar Panigrahi
Electrical & Computer Engineering Theses & Dissertations
An improved photo induced current transient spectroscopy (PICTS) technique is developed for studying deep level parameters in high-resistivity semiconductor materials. A new digital data acquisition approach and improvement in the cryogenics of the system have enabled us, for the first time in our laboratory, to detect CuA level in a copper doped silicon compensated gallium arsenide (GaAs:Si:Cu) sample. The digital approach improves both the signal to noise ratio (S/N) and the efficiency of the system. Also, multiple PICTS spectra in a single thermal cycle can be obtained. In the present work, various doped and undoped gallium arsenide ( GaAs) and …