Electronic Devices and Semiconductor Manufacturing Commons^™

In-Situ Ellipsometry Characterization Of Anodically Grown Silicon Dioxide And Lithium Intercalation Into Silicon, Eric A. Montgomery

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

In this thesis, in-situ ellipsometry and electroanalytical investigations of two electrochemical processes are reported: including the formation of anodically grown silicon dioxide and the intercalation of lithium into silicon. Analysis of the ellipsometry data shows that the anodically grown silicon dioxide layer is uniform and has similar properties as thermally grown silicon dioxide. The lithium-ion intercalation data reveals non-uniform thin film formation, which requires further studies and development of appropriate ellipsometric optical models.

Advisers: Eva Schubert and Mathias Schubert

Response Characterization Of Electroactive Polymers As Mechanical Sensors, G. Alici, Geoffrey M. Spinks, J. D. Madden, Y. Wu, G G. Wallace

Gordon Wallace

The characterization of the dynamic response (including transfer function identification) of trilayer polypyrrole (PPy) type conducting polymer sensors is presented. The sensor was built like a cantilever beam with the free end stimulated through a mechanical lever system, which provided displacement inputs. The voltage generated and current passing between the two outer PPy layers as a result of the input was measured to model the output/input behavior of the sensors based on their experimental current/displacement and voltage/displacement frequency responses. We specifically targeted the low-frequency behavior of the sensor as it is a relatively slowsystem. Experimental transfer function models were generated …

Structural, Electrical And Thermoelectric Properties Of Chromium Silicate Thin Films, Makram Abd El Qader

UNLV Theses, Dissertations, Professional Papers, and Capstones

Thermoelectric devices can generate electrical power as a result of their ability to produce electrical currents in the presence of thermal gradients. They can also produce refrigerative cooling when electrical power is supplied to them. Among the potential semiconducting silicides, CrSi ₂ is attractive because of its high thermal and chemical stability and its potential for thermoelectric application. CrSi₂ /SiO₂ thin-film structures were prepared using RF sputtering. As deposited and annealed (300°C to 600°C) thin films were characterized for their structural, electrical, and thermoelectric transport properties. As-sputtered CrSi ₂ film is amorphous at room temperature and crystallizes around …

Purely Electronic Switching With High Uniformity, Resistance Tunability, And Good Retention In Pt-Dispersed Sio2 Thin Films For Reram, Albert Chen

Albert B Chen

Resistance switching memory operating by a purely electronic switching mechanism, which was first realized in Pt-dispersed SiO2 thin films, satisfies criteria including high uniformity, fast switching speed, and long retention for non-volatile memory application. This resistive element obeys Ohm's law for the area dependence, but its resistance exponentially increases with the film thickness, which provides new freedom to tailor the device characteristics.

Final Design Review: Design Of An Integrated Solar Cell Array To Power A Solar Ear Hearing Aid Battery Recharger, Christina (Chrissa) Blattner, Scott Carey, Jared Myren, Faye Siao

Materials Engineering

As the energy of fossil fuel supplies are fast depleting due to high consumptions of energy by human beings, the need for other sources of energy, such as solar energy, has become a viable option. By creating solar cell arrays the desired voltage can be generated. The overall goal of the Solar Ear project is to create an array of photovoltaic cells connected with aluminum tracings to recharge batteries that are specifically used for hearing aids. The goal embodies two main areas: the design of a processing method to connect the cells during a micro-fabrication process and the creation of …

Electronically Enhanced Surface Diffusion During Ge Growth On Si(100), Ali Orguz Er, Hani E. Elsayed-Ali

Physics Faculty Publications

The effect of nanosecond pulsed laser excitation on surface diffusion during the growth of Ge on Si(100) at 250 °C was studied. In situ reflection high-energy electron diffraction was used to measure the surface diffusion coefficient while ex situ atomic force microscopy was used to probe the structure and morphology of the grown quantum dots. The results show that laser excitation of the substrate increases the surface diffusion during the growth of Ge on Si(100), changes the growth morphology, improves the crystalline structure of the grown quantum dots, and decreases their size distribution. A purely electronic mechanism of enhanced surface …