Electronic Devices and Semiconductor Manufacturing Commons^™

Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov

Theses and Dissertations

This study explores the potential of beryllium (Be) as an alternative dopant to magnesium (Mg) for achieving higher hole concentrations in gallium nitride (GaN). Despite Mg prominence as an acceptor in optoelectronic and high-power devices, its deep acceptor level at 0.22 eV above the valence band limits its effectiveness. By examining Be, this research aims to pave the way to overcoming these limitations and extend the findings to aluminum nitride and aluminum gallium nitride (AlGaN) alloy. Key contributions of this work include. i)Identification of three Be-related luminescence bands in GaN through photoluminescence spectroscopy, improving the understanding needed for further material …

Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian

Theses and Dissertations

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …

Investigation Of Degradation Effects Due To Gate Stress In Gan-On-Si High Electron Mobility Transistors Through Analysis Of Low Frequency Noise, Michael Curtis Meyer Masuda

Master's Theses

Gallium Nitride (GaN) high electron mobility transistors (HEMT) have superior performance characteristics compared to Silicon (Si) and Gallium Arsenide (GaAs) based transistors. GaN is a wide bandgap semiconductor which allows it to operate at higher breakdown voltages and power. Unlike traditional semiconductor devices, the GaN HEMT channel region is undoped and relies on the piezoelectric effect created at the GaN and Aluminum Gallium Nitride (AlGaN) heterojunction to create a conduction channel in the form of a quantum well known as the two dimensional electron gas (2DEG). Because the GaN HEMTs are undoped, these devices have higher electron mobility crucial for …

Dc, Rf, And Thermal Characterization Of High Electric Field Induced Degradation Mechanisms In Gan-On-Si High Electron Mobility Transistors, Matthew Anthony Bloom

Master's Theses

Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are becoming increasingly popular in power amplifier systems as an alternative to bulkier vacuum tube technologies. GaN offers advantages over other III-V semiconductor heterostructures such as a large bandgap energy, a low dielectric constant, and a high critical breakdown field. The aforementioned qualities make GaN a prime candidate for high-power and radiation-hardened applications using a smaller form-factor. Several different types of semiconductor substrates have been considered for their thermal properties and cost-effectiveness, and Silicon (Si) has been of increasing interest due to a balance between both factors.

In this thesis, the DC, …

Enhanced Light Extraction Efficiency From Gan Light Emitting Diodes Using Photonic Crystal Grating Structures, Simeon S. Trieu

Master's Theses

Gallium nitride (GaN) light emitting diodes (LED) embody a large field of research that aims to replace inefficient, conventional light sources with LEDs that have lower power, higher luminosity, and longer lifetime. This thesis presents an international collaboration effort between the State Key Laboratory for Mesoscopic Physics in Peking University (PKU) of Beijing, China and the Electrical Engineering Department of California Polytechnic State University, San Luis Obispo. Over the course of 2 years, Cal Poly’s side has simulated GaN LEDs within the pure blue wavelength spectrum (460nm), focusing specifically on the effects of reflection gratings, transmission gratings, top and bottom …

Optimization Of Gan Laser Diodes Using 1d And 2d Optical Simulations, Sean Richard Keali'i Jobe

Master's Theses

This paper studies the optical properties of a GaN Laser Diode (LD). Through simulation, the GaN LD is optimized for the best optical confinement factor. It is found that there are optimal thicknesses of each layer in the diode that yield the highest optical confinement factor. There is a strong relationship between the optical confinement factor and lasing threshold—a higher optical confinement factor results in a lower lasing threshold. Increasing optical confinement improves lasing efficiency. Blue LDs are important to the future of lighting sources as they represent the final color in the RGB spectrum that does not have a …