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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Integration Of Chemical Sensing And Electrowetting Actuation On Chemoreceptive Neuron Mos (Cνmos) Transistors, Nick Shen, Zengtao Liu, Blake Jacquot, Bradley Minch, Edwin Kan
Integration Of Chemical Sensing And Electrowetting Actuation On Chemoreceptive Neuron Mos (Cνmos) Transistors, Nick Shen, Zengtao Liu, Blake Jacquot, Bradley Minch, Edwin Kan
Bradley Minch
An integration of chemical sensors and electrowetting actuators based on the chemoreceptive neuron MOS (CνMOS) transistors has brought forth a novel system-on-chip approach to the microfluidic system. The extended floating-gate structure of the CνMOS transistors enables monolithic sensing and actuating schemes. The sensors with generic chemical receptive areas have been characterized with various fluids, and have demonstrated a high sensitivity from the current differentiation and a large dynamic range from threshold-voltage shifts in sensing polar and electrolytic liquids. The actuators have illustrated valve functions based on contact-angle modification by nonvolatile charge injection into the channel wall. Electrochemical models for sensing …
Charge-Based Chemical Sensors: A Neuromorphic Approach With Chemoreceptive Neuron Mos (Cvmos) Transistors, Nick Shen, Zengtao Liu, Chungho Lee, Bradley Minch, Edwin Kan
Charge-Based Chemical Sensors: A Neuromorphic Approach With Chemoreceptive Neuron Mos (Cvmos) Transistors, Nick Shen, Zengtao Liu, Chungho Lee, Bradley Minch, Edwin Kan
Bradley Minch
A novel chemoreceptive neuron MOS (CνMOS) transistor with an extended floating-gate structure has been designed with several individual features that significantly facilitate system integration of chemical sensing. We have fabricated CνMOS transistors with generic molecular receptive areas and have characterized them with various fluids. We use an insulating polymer layer to provide physical and electrical isolation for sample fluid delivery. Experimental results from these devices have demonstrated both high sensitivity via current differentiation and large dynamic range from threshold voltage shifts in sensing both polar and electrolytic liquids. We have established electrochemical models for both steady-state and transient analyses. Our …
Switch Yard Operation In Thermal Power Plant(Katpp Jhalawar Rajasthan), Radhey Shyam Meena Er.
Switch Yard Operation In Thermal Power Plant(Katpp Jhalawar Rajasthan), Radhey Shyam Meena Er.
Radhey Shyam Meena
Switchyard Provides the facilities for switching ,protection & Control of electric power. To handle high Voltage power with proper Safety measures. To isolate the noises coming from the grid with true 50Hz power SWITCH YARD IS IMPORTANT PART IN THERMAL PLANT. IN KALISINDH THERMAL 400KV AND 220KV SWITCH YARD LOCATED.
Critical Area Driven Dummy Fill Insertion To Improve Manufacturing Yield, Nishant Dhumane
Critical Area Driven Dummy Fill Insertion To Improve Manufacturing Yield, Nishant Dhumane
Masters Theses 1911 - February 2014
Non-planar surface may cause incorrect transfer of patterns during lithography. In today’s IC manufacturing, chemical mechanical polishing (CMP) is used for topographical planarization. Since polish rates for metals and oxides are different, dummy metal fills in layout is used to minimize post-CMP thickness variability. Traditional metal fill solutions focus on satisfying density target determined by layout density analysis techniques. These solutions may potentially reduce yield by increasing probability of failure (POF) due to particulate defects and also impact design performance. Layout design solutions that minimize POF and also improve surface planarity via dummy fill insertions have competing requirements for line …