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Electronic Devices and Semiconductor Manufacturing Commons™
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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Neutron Radiation Effects On Ge And Gesn Semiconductors, Christopher T. O'Daniel
Neutron Radiation Effects On Ge And Gesn Semiconductors, Christopher T. O'Daniel
Theses and Dissertations
Two different semiconductor materials received neutron radiation for assessment of radiation damage. The two materials are undoped bulk Ge and epitaxial Ge0.991Sn0.009, which is doped heavily with phosphorous. At room temperature, the Ge sample has direct and indirect bandgaps at 0.78 eV and 0.66 eV, respectively. The Ge0.991Sn0.009 sample has direct and indirect bandgaps at 0.72 eV and 0.63 eV, respectively. Two samples of each material were exposed to research reactor neutrons, delivering a 1 MeV equivalent neutron fluence of 2.52 × 1015 n/cm2. In order to assess the radiation …
Total Dose Effects Of Ionizing And Non-Ionizing Radiation On Piezoresistive Pressure Transducer Chips, Samuel J. Willmon
Total Dose Effects Of Ionizing And Non-Ionizing Radiation On Piezoresistive Pressure Transducer Chips, Samuel J. Willmon
Theses and Dissertations
The effects of ionizing and non ionizing radiation on the resistivity of silicon based, piezoresistive bulk micro-machined chips from pressure transducers were examined. Standard current-voltage (I-V) measurements were taken in-situ and post-irradiation during isothermal annealing at room temperature. One group of chips was irradiated to a maximum total gamma dose of lMrad(Si) in the 11,000 Ci (60) Co gamma cell at Ohio State University. The second group of chips was irradiated at the Ohio State University Research Reactor facility to a maximum total neutron dose of 4 Mrad(Si) using beam port Hi. The resistivity was shown to decrease during gamma …
Total Ionizing Dose Effects In Mosfet Devices At 77 K, Kevin J. Daul
Total Ionizing Dose Effects In Mosfet Devices At 77 K, Kevin J. Daul
Theses and Dissertations
Total ionizing dose effects on thermal oxide and reoxidized nitrided oxide (RNO) MOSFET devices at 77 K were studied. The MOSFETs were immersed in liquid nitrogen and irradiated, using a 60Co source, up to 1 Mrad(Si) at a dose rate of 107 rads(Si)-sec. Drain current-gate voltage characteristics were obtained and used to determine threshold voltage and transconductance. At 77 K the subthreshold slopes indicated no observed buildup of interface states in any of the transistors. Furthermore, all transistors experienced very little change in the transconductance. Typical negative shifts in threshold voltage as dose increased were observed in all of …