Electronic Devices and Semiconductor Manufacturing Commons^™

Amorphous Boron Carbide-Amorphous Silicon Heterojunction Devices, Vojislav Medic

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

This dissertation will show successful development and characterization of amorphous boron carbide-amorphous silicon heterojunction device with potential for neutron detection. The amorphous hydrogenated boron carbide (a-BC:H) has been extensively researched as a semiconductor for neutron voltaic device fabrication. Naturally occurring boron contains 19.8% of boron isotope B¹⁰ that has a high absorption cross section of thermal neutrons at lower energies, and boron carbide contains 14.7% of that B¹⁰ isotope. Therefore, as a semiconductor compound of boron a-BC:H has the ability to absorb radiation, generate charge carriers, and collect those carriers. Previous work on a-BC:H devices investigated the fabrication …

Laser-Assisted Metal Organic Chemical Vapor Deposition Of Gallium Nitride, Hossein Rabiee Golgir

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Due to its unique properties, gallium nitride is of great interest in industry applications including optoelectronics (LEDs, diode laser, detector), high power electronics, and RF and wirelss communication devices. The inherent shortcomings of current conventional deposition methods and the ever-increasing demand for gallium nitride urge extended efforts for further enhancement of gallium nitride deposition. The processes of conventional methods for gallium nitride deposition, which rely on thermal heating, are inefficient energy coupling routes to drive gas reactions. A high deposition temperature (1000-1100 °C) is generally required to overcome the energy barriers to precursor adsorption and surface adatom migration. However, there …

Skin Effect Suppression In Infrared-Laser Irradiated Planar Multi-Walled Carbon Nanotube/ Cu Conductors, Kamran Keramatnejad, Yang Gao, Yunshen Zhou, Hossein Rabiee Glogir, Mengmeng Wang, Yongfeng Lu

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Skin effect suppression in planar multi-walled carbon nanotube (MWCNT)/Copper (Cu) conductors was realized at the 0-10 MHz frequency range through infrared laser irradiation of MWCNTs, which were coated on the surface of the Cu substrate via the electrophoretic deposition (EPD) method. The effect of laser irradiation and its power density on electrical and structural properties of the MWCNT/Cu conductors was investigated using a wavelength-tunable CO2 laser and then comparing the performance of the samples prepared at different conditions with that of pristine Cu. The irradiation at λ=9.219 μm proved to be effective in selective delivery of energy towards depths close …

In-Situ Ellipsometry Characterization Of Anodically Grown Silicon Dioxide And Lithium Intercalation Into Silicon, Eric A. Montgomery

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

In this thesis, in-situ ellipsometry and electroanalytical investigations of two electrochemical processes are reported: including the formation of anodically grown silicon dioxide and the intercalation of lithium into silicon. Analysis of the ellipsometry data shows that the anodically grown silicon dioxide layer is uniform and has similar properties as thermally grown silicon dioxide. The lithium-ion intercalation data reveals non-uniform thin film formation, which requires further studies and development of appropriate ellipsometric optical models.

Advisers: Eva Schubert and Mathias Schubert