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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Treated Hfo2 Based Rram Devices With Ru, Tan, Tin As Top Electrode For In-Memory Computing Hardware, Yuvraj Dineshkumar Patel
Treated Hfo2 Based Rram Devices With Ru, Tan, Tin As Top Electrode For In-Memory Computing Hardware, Yuvraj Dineshkumar Patel
Theses
The scalability and power efficiency of the conventional CMOS technology is steadily coming to a halt due to increasing problems and challenges in fabrication technology. Many non-volatile memory devices have emerged recently to meet the scaling challenges. Memory devices such as RRAMs or ReRAM (Resistive Random-Access Memory) have proved to be a promising candidate for analog in memory computing applications related to inference and learning in artificial intelligence. A RRAM cell has a MIM (Metal insulator metal) structure that exhibits reversible resistive switching on application of positive or negative voltage. But detailed studies on the power consumption, repeatability and retention …
High Speed, High Current Monitoring System, Nicolette Lila Ray
High Speed, High Current Monitoring System, Nicolette Lila Ray
Electrical Engineering
Electronics testing requires lengthy data collection and analysis. Streamlining at least part of this process allows resource reallocation, and faster data processing. Verifying a signal’s efficiency is key specification for a component’s datasheet. This project focuses on streamlining data collection when measuring a device’s output current. It combines amplifier design and digital interfacing to perform monitor a device’s output current. A computer-enable interface displays a graphical output current representation. It ensures accurate, high speed, high current measurements while removing a person’s need to manually plot data after testing. A new testing method provides room for company and product growth with …