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Electronic Devices and Semiconductor Manufacturing Commons™
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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Treated Hfo2 Based Rram Devices With Ru, Tan, Tin As Top Electrode For In-Memory Computing Hardware, Yuvraj Dineshkumar Patel
Treated Hfo2 Based Rram Devices With Ru, Tan, Tin As Top Electrode For In-Memory Computing Hardware, Yuvraj Dineshkumar Patel
Theses
The scalability and power efficiency of the conventional CMOS technology is steadily coming to a halt due to increasing problems and challenges in fabrication technology. Many non-volatile memory devices have emerged recently to meet the scaling challenges. Memory devices such as RRAMs or ReRAM (Resistive Random-Access Memory) have proved to be a promising candidate for analog in memory computing applications related to inference and learning in artificial intelligence. A RRAM cell has a MIM (Metal insulator metal) structure that exhibits reversible resistive switching on application of positive or negative voltage. But detailed studies on the power consumption, repeatability and retention …
Development And Characterization Of Metal Contacts For Graded Composition Ingan Solar Cells, Reem E. Alhelais
Development And Characterization Of Metal Contacts For Graded Composition Ingan Solar Cells, Reem E. Alhelais
Graduate Theses and Dissertations
There is an increasing demand for high-power electronic components and optoelectronic devices with low-loss and high efficiency. III-nitride semiconductor materials have demonstrated great potential for high-power, high-frequency, and high-temperature applications because of their remarkable and wide-ranging electronic and physical properties. These material systems, including alloys of AlN, GaN, and InN, are currently being explored for their potential to develop efficient photovoltaic cells. They can potentially achieve higher efficiency because of their very high direct wide band edge, absorption coefficients, and resistance to defects. The compositionally graded Group III-nitride alloy allows access to a large range of energies by varying the …
Synthesis Of Graphene Using Plasma Etching And Atmospheric Pressure Annealing: Process And Sensor Development, Andrew Robert Graves
Synthesis Of Graphene Using Plasma Etching And Atmospheric Pressure Annealing: Process And Sensor Development, Andrew Robert Graves
Graduate Theses, Dissertations, and Problem Reports
Having been theorized in 1947, it was not until 2004 that graphene was first isolated. In the years since its isolation, graphene has been the subject of intense, world-wide study due to its incredibly diverse array of useful properties. Even though many billions of dollars have been spent on its development, graphene has yet to break out of the laboratory and penetrate mainstream industrial applications markets. This is because graphene faces a ‘grand challenge.’ Simply put, there is currently no method of manufacturing high-quality graphene on the industrial scale. This grand challenge looms particularly large for electronic applications where the …