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Engineering Physics

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Electrical & Computer Engineering Faculty Publications

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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Nanostructure Evolution Of Magnetron Sputtered Hydrogenated Silicon Thin Films, Dipendra Adhikari, Maxwell M. Junda, Sylvain X. Marsillac, Robert W. Collins, Nikolas J. Podraza Aug 2017

Nanostructure Evolution Of Magnetron Sputtered Hydrogenated Silicon Thin Films, Dipendra Adhikari, Maxwell M. Junda, Sylvain X. Marsillac, Robert W. Collins, Nikolas J. Podraza

Electrical & Computer Engineering Faculty Publications

Hydrogenated silicon (Si:H) thin films have been prepared by radio frequency (RF) magnetron sputtering. The effect of hydrogen gas concentration during sputtering on the resultant film structural and optical properties has been investigated by real time spectroscopic ellipsometry (RTSE) and grazing incidence x-ray diffraction (GIXRD). The analysis of in-situ RTSE data collected during sputter deposition tracks the evolution of surface roughness and film bulk layer thickness with time. Growth evolution diagrams depicting amorphous, nanocrystalline and mixed-phase regions for low and high deposition rate Si:H are constructed and the effects of process parameter (hydrogen gas concentration, total pressure and RF power) …

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Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman Jun 2002

Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman

Electrical & Computer Engineering Faculty Publications

CuIn[sub 1-x]Al[sub x]Se[sub 2] thin films are investigated for their application as the absorber layer material for high efficiency solar cells. Single-phase CuIn[sub 1-x]Al[sub x]Se[sub 2] films were deposited by four source elemental evaporation with a composition range of 0≤x≤0.6. All these films demonstrate a normalized subband gap transmission >85% with 2 µm film thickness. Band gaps obtained from spectroscopic ellipsometry show an increase with the Al content in the CuIn[sub 1-x]Al[sub x]Se[sub 2] film with a bowing parameter of 0.62. The structural properties investigated using x-ray diffraction measurements show a decrease in lattice spacing as the Al content increases. …

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Atomic Hydrogen Cleaning Of Inp(100) For Preparation Of A Negative Electron Affinity Photocathode, K. A. Elamrawi, M. A. Hafez, H. E. Elsayed-Ali Jan 1998

Atomic Hydrogen Cleaning Of Inp(100) For Preparation Of A Negative Electron Affinity Photocathode, K. A. Elamrawi, M. A. Hafez, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Atomic hydrogen cleaning is used to clean InP(100) negative electron affinity photocathodes. Reflection high-energy electron diffraction patterns of reconstructed, phosphorus-stabilized, InP(100) surfaces are obtained after cleaning at ∼400 °C. These surfaces produce high quantum efficiency photocathodes (∼8.5%), in response to 632.8 nm light. Without atomic hydrogen cleaning, activation of InP to negative electron affinity requires heating to ∼530 °C. At this high temperature, phosphorus evaporates preferentially and a rough surface is obtained. These surfaces produce low quantum efficiency photocathodes (∼0.1%). The use of reflection high-energy electron diffraction to measure the thickness of the deposited cesium layer during activation by correlating …

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